CN101802976B - 基板载置机构、基板处理装置、和抑制在基板载置机构上堆积膜的方法 - Google Patents

基板载置机构、基板处理装置、和抑制在基板载置机构上堆积膜的方法 Download PDF

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Publication number
CN101802976B
CN101802976B CN2008801066390A CN200880106639A CN101802976B CN 101802976 B CN101802976 B CN 101802976B CN 2008801066390 A CN2008801066390 A CN 2008801066390A CN 200880106639 A CN200880106639 A CN 200880106639A CN 101802976 B CN101802976 B CN 101802976B
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China
Prior art keywords
temperature
substrate
film
heater plate
processed
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CN2008801066390A
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Chinese (zh)
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CN101802976A (zh
Inventor
原正道
五味淳
前川伸次
多贺敏
山本薰
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from PCT/JP2008/065874 external-priority patent/WO2009034893A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN2008801066390A 2007-09-11 2008-09-03 基板载置机构、基板处理装置、和抑制在基板载置机构上堆积膜的方法 Active CN101802976B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007234852 2007-09-11
JP2007-234852 2007-09-11
JP2008-216970 2008-08-26
JP2008216970A JP2009084686A (ja) 2007-09-11 2008-08-26 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
PCT/JP2008/065874 WO2009034893A1 (ja) 2007-09-11 2008-09-03 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体

Publications (2)

Publication Number Publication Date
CN101802976A CN101802976A (zh) 2010-08-11
CN101802976B true CN101802976B (zh) 2012-05-23

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CN2008801066390A Active CN101802976B (zh) 2007-09-11 2008-09-03 基板载置机构、基板处理装置、和抑制在基板载置机构上堆积膜的方法

Country Status (5)

Country Link
US (2) US20100210115A1 (enExample)
JP (1) JP2009084686A (enExample)
KR (1) KR101287225B1 (enExample)
CN (1) CN101802976B (enExample)
TW (1) TW200935541A (enExample)

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Publication number Priority date Publication date Assignee Title
US8083855B2 (en) * 2007-10-31 2011-12-27 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
CN102886957A (zh) * 2011-07-20 2013-01-23 上海申科技术有限公司 电加热层压机的加热板
NL2009858A (en) 2011-12-27 2013-07-01 Asml Netherlands Bv Substrate holder, lithographic apparatus, and device manufacturing method.
CN103103497B (zh) * 2012-11-21 2016-02-03 中国科学院微电子研究所 一种原子层沉积设备
JP5860431B2 (ja) * 2013-04-25 2016-02-16 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
KR101444808B1 (ko) * 2013-06-26 2014-09-26 한국전기연구원 반도체 웨이퍼 프로브용 척 플레이트 및 그 제조방법
JP6105035B2 (ja) * 2015-12-18 2017-03-29 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
US11961747B2 (en) * 2018-03-28 2024-04-16 Kyocera Corporation Heater and heater system
JP7162500B2 (ja) * 2018-11-09 2022-10-28 株式会社Kelk 温調装置
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
JP6845286B2 (ja) 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
US11981998B2 (en) * 2019-11-04 2024-05-14 Applied Materials, Inc. Systems and methods for substrate support temperature control
JP7805297B2 (ja) * 2020-01-13 2026-01-23 ラム リサーチ コーポレーション 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
IT202100023309A1 (it) * 2021-09-09 2023-03-09 Natale Speciale Reattore epitassiale con isolamento termico variabile

Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH1116858A (ja) 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JPH11176919A (ja) 1997-12-08 1999-07-02 Sony Corp 静電チャック

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JP2927857B2 (ja) * 1990-01-19 1999-07-28 株式会社東芝 基板加熱装置
US5676205A (en) * 1993-10-29 1997-10-14 Applied Materials, Inc. Quasi-infinite heat source/sink
JPH09256153A (ja) * 1996-03-15 1997-09-30 Anelva Corp 基板処理装置
JPH1064983A (ja) * 1996-08-16 1998-03-06 Sony Corp ウエハステージ
US5811762A (en) * 1996-09-25 1998-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Heater assembly with dual temperature control for use in PVD/CVD system
JPH10326788A (ja) 1997-05-26 1998-12-08 Kokusai Electric Co Ltd ヒータユニット及び基板処理装置
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP4209057B2 (ja) * 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
JP2003338492A (ja) * 2002-05-21 2003-11-28 Tokyo Electron Ltd プラズマ処理装置
US7846254B2 (en) * 2003-05-16 2010-12-07 Applied Materials, Inc. Heat transfer assembly
JP4672597B2 (ja) * 2005-06-02 2011-04-20 日本碍子株式会社 基板処理装置
JP2007051317A (ja) * 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
JP4874743B2 (ja) * 2005-09-05 2012-02-15 日本パイオニクス株式会社 窒化ガリウム系化合物半導体の気相成長装置

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH1116858A (ja) 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JPH11176919A (ja) 1997-12-08 1999-07-02 Sony Corp 静電チャック

Also Published As

Publication number Publication date
US20100210115A1 (en) 2010-08-19
JP2009084686A (ja) 2009-04-23
US20120199573A1 (en) 2012-08-09
US9202728B2 (en) 2015-12-01
TW200935541A (en) 2009-08-16
CN101802976A (zh) 2010-08-11
KR20100071979A (ko) 2010-06-29
KR101287225B1 (ko) 2013-07-17

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