JP2009080279A - 液晶表示装置 - Google Patents
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- 238000002161 passivation Methods 0.000 abstract description 131
- 239000000758 substrate Substances 0.000 abstract description 29
- 230000002950 deficient Effects 0.000 abstract 2
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- 238000002834 transmittance Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 17
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
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- 229910015202 MoCr Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
Abstract
【解決手段】映像信号線107が端子部まで延在している。映像信号線107は端子部以外は無機パッシベーション膜108および有機パッシベーション膜109によって覆われている。端子部は導通をとるために有機パッシベーション膜109および無機パッシベーション膜108に端子部スルーホールが形成されている。端子部は映像信号線107を保護するためにITO膜120によって覆われている。端子部スルーホールでの有機パッシベーション膜109のテーパ角θを35度以下とし、かつ、端子部スルーホール周辺の有機パッシベーション膜109の厚さを300nm〜600nmとすることによって配向膜の削り屑が端子部に入り込むことを防止し、導通不良を防ぐ。
【選択図】図1
Description
Claims (10)
- 映像信号線と走査線に囲まれた領域に、画素電極とTFTを含む画素が形成された表示領域と、前記表示領域の外側に端子部が形成された液晶表示装置であって、
前記TFTを覆って有機絶縁膜が形成され、前記画素部の有機絶縁膜は厚さ1〜4μmであり、前記有機絶縁膜の上には前記画素電極が形成され、前記有機絶縁膜には、前記画素電極と前記TFTを導通するための画素部スルーホールが形成され、
前記表示領域の外側では前記映像信号線または前記走査線が前記端子部まで延在し、前記映像信号線または前記走査線は前記有機絶縁膜によって被覆され、
前記端子部では前記有機絶縁膜に端子部スルーホールが形成されており、前記端子部スルーホール周辺の前記有機絶縁膜は厚さ300nm〜600nmであり、前記有機絶縁膜の前記端子部スルーホールのテーパ角は前記有機絶縁膜の前記画素部スルーホールのテーパ角よりも小さく、前記有機絶縁膜の前記端子部スルーホールのテーパ角は5度〜35度であることを特徴とする液晶表示装置。 - 前記有機絶縁膜の前記端子部スルーホールのテーパ角は20度〜35度であることを特徴とする請求項1に記載の液晶表示装置。
- 前記端子部において、前記有機絶縁膜の下には無機絶縁膜が存在していることを特徴とする請求項1に記載の液晶表示装置。
- 映像信号線と走査線に囲まれた領域に、画素電極とTFTを含む画素が形成された表示領域と、前記表示領域の外側に端子部が形成された液晶表示装置であって、
前記TFTを覆って有機絶縁膜が形成され、前記画素部の有機絶縁膜は厚さ1〜4μmであり、前記有機絶縁膜の上には前記画素電極が形成され、前記有機絶縁膜には、前記画素電極と前記TFTを導通するための画素部スルーホールが形成され、
前記表示領域の外側では前記映像信号線または前記走査線が前記端子部まで延在し、前記映像信号線または前記走査線は前記有機絶縁膜によって被覆され、
前記端子部では前記有機絶縁膜に端子部スルーホールが形成されており、前記端子部スルーホール周辺の前記有機絶縁膜は厚さ100nm〜600nmであり、前記有機絶縁膜の前記端子部スルーホールのテーパ角は前記有機絶縁膜の画素部スルーホールのテーパ角よりも小さく、前記有機絶縁膜の前記端子部スルーホールのテーパ角は20度以下であることを特徴とする液晶表示装置。 - 前記端子部において、前記有機絶縁膜の下には無機絶縁膜が存在していることを特徴とする請求項4に記載の液晶表示装置。
- 映像信号線と走査線に囲まれた領域に、画素電極とTFTを含む画素が形成された表示領域と、前記表示領域の外側に端子部が形成された液晶表示装置であって、
前記TFTを覆って有機絶縁膜が形成され、前記画素部の有機絶縁膜は厚さ1〜4μmであり、前記有機絶縁膜の上には前記画素電極が形成され、前記有機絶縁膜には、前記画素電極と前記TFTを導通するための画素部スルーホールが形成され、
前記表示領域の外側では前記映像信号線または前記走査線が前記端子部まで延在し、前記映像信号線または前記走査線は前記有機絶縁膜によって被覆され、
前記端子部では前記有機絶縁膜に端子部スルーホールが形成されており、前記端子部スルーホール周辺の前記有機絶縁膜の膜厚はハーフトーン露光によって、前記画素部の前記有機絶縁膜の膜厚よりも小さくなっており、前記有機絶縁膜の前記端子部スルーホールのテーパ角は前記有機絶縁膜の前記画素部スルーホールのテーパ角よりも小さく、前記有機絶縁膜の前記端子部スルーホールのテーパ角は5度〜35度であることを特徴とする液晶表示装置。 - 前記端子部スルーホール周辺の前記有機絶縁膜の膜厚は300nm〜600nmであることを特徴とする請求項6に記載の液晶表示装置。
- 前記有機絶縁膜の前記端子部スルーホールのテーパ角は20度〜35度であることを特徴とする請求項6に記載の液晶表示装置。
- 映像信号線と走査線に囲まれた領域に、画素電極とTFTを含む画素が形成された表示領域と、前記表示領域の外側に端子部が形成された液晶表示装置であって、
前記TFTを覆って有機絶縁膜が形成され、前記画素部の有機絶縁膜は厚さ1〜4μmであり、前記有機絶縁膜の上には前記画素電極が形成され、前記有機絶縁膜には、前記画素電極と前記TFTを導通するための画素部スルーホールが形成され、
前記表示領域の外側では前記映像信号線または前記走査線が前記端子部まで延在し、前記映像信号線または前記走査線は前記有機絶縁膜によって被覆され、
前記端子部では前記有機絶縁膜に端子部スルーホールが形成されており、前記端子部スルーホール周辺の前記有機絶縁膜の膜厚及び前記端子部スルーホールとのデーパ角は、多階調ハーフトーン露光によって、前記画素部の前記有機絶縁膜の膜厚よりも小さくなっており、かつ、前記有機絶縁膜の前記端子部スルーホールのテーパ角は前記有機絶縁膜の前記画素部スルーホールのテーパ角よりも小さく、前記有機絶縁膜の前記端子部スルーホールのテーパ角は20度以下であることを特徴とする液晶表示装置。 - 前記端子部スルーホール周辺の前記有機絶縁膜の膜厚は100nm〜600nmであることを特徴とする請求項9に記載の液晶表示装置。
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JP2007249252A JP4485559B2 (ja) | 2007-09-26 | 2007-09-26 | 液晶表示装置 |
US12/232,791 US7760281B2 (en) | 2007-09-26 | 2008-09-24 | Liquid crystal display device |
CN200810166378.3A CN101398589B (zh) | 2007-09-26 | 2008-09-26 | 液晶显示装置 |
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WO2011013434A1 (ja) * | 2009-07-28 | 2011-02-03 | シャープ株式会社 | 配線基板およびその製造方法、表示パネル、並びに表示装置 |
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JP4448535B2 (ja) * | 2007-12-18 | 2010-04-14 | 株式会社 日立ディスプレイズ | 表示装置 |
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US20090079890A1 (en) | 2009-03-26 |
CN101398589B (zh) | 2011-01-12 |
JP4485559B2 (ja) | 2010-06-23 |
CN101398589A (zh) | 2009-04-01 |
US7760281B2 (en) | 2010-07-20 |
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