JP4772395B2 - 電気光学表示装置およびその製造方法 - Google Patents
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Description
<A.装置構成>
本発明に係る実施の形態の電気光学表示装置として、TFTをスイッチング素子として用いた透過型液晶表示装置のTFTアクティブマトリックス基板100の平面構成を図1に、また、図1におけるA−O−A’線での断面構成を図2に示す。
次に、製造工程を順に示す断面図である図3〜図12を用いて、TFTアクティブマトリックス基板100の製造方法について説明する。なお、図3〜図12に示す断面は、図1におけるA−O−A’線での断面に対応する。また、図13〜図17には、各工程における平面図を示している。
以上説明した本発明に係る実施の形態によれば、画素ドレインコンタクトホールCHの底部のコンタクトホール13を完全に埋め込むように、ITOのような透明導電性膜よりも延性の高い金属薄膜で構成されるコンタクト導電膜15を配設することで、コンタクトホール13の周縁部の角部でクラックが発生することを防止できる。
以上説明した実施の形態においては、無機系絶縁膜を形成して第2の絶縁膜11とし、続けて感光性を有する有機系樹脂絶縁膜を塗布形成して第3の絶縁膜12とし、1回の写真製版工程で、第3の絶縁膜12に開口部131および141を形成し、その後、ドライエッチング法とアッシング法を用いて、底部にドレイン電極9が露出する、断面がすり鉢状の画素ドレインコンタクトホールCHを形成する例を示したが、第2の絶縁膜11を貫通するコンタクトホールと、第3の絶縁膜12を貫通するコンタクトホールとをそれぞれ別の写真製版工程で形成するようにしても良い。
以上説明した実施の形態においては、本発明を光透過型の液晶表示装置用のアクティブマトリックス基板に適用する例を説明したが、これに限定されるものではなく、本実施の形態と同様の構造を有する他の電気光学表示装置に適用することが可能である。
Claims (6)
- 絶縁性基板と、
前記絶縁性基板上にマトリックス状に配設され、薄膜トランジスタが電気的に接続された画素電極をそれぞれ有する複数の表示画素と、を有したアクティブマトリックス基板を備えた電気光学表示装置であって、
前記アクティブマトリックス基板は、
前記薄膜トランジスタのドレイン電極上を含めて前記絶縁性基板上全体を覆う無機系絶縁膜と、
前記無機系絶縁膜上全体を覆う有機系樹脂絶縁膜と、
前記無機系絶縁膜および前記有機系樹脂絶縁膜を貫通して前記ドレイン電極に達する画素ドレインコンタクトホールと、
前記画素ドレインコンタクトホールのうち前記有機系樹脂絶縁膜を貫通する部分の底部からはみ出さないように配設され、前記ドレイン電極に接触する金属膜で構成されるコンタクト導電膜と、を有し、
前記画素電極は、
前記有機系樹脂絶縁膜上を覆うとともに、前記画素ドレインコンタクトホールの内壁および前記コンタクト導電膜上を覆うように配設され、
前記コンタクト導電膜の端縁部は、前記無機系絶縁膜上に形成されている、電気光学表示装置。 - 前記画素ドレインコンタクトホールは、
前記無機系絶縁膜を貫通する第1のコンタクトホールと、
前記有機系樹脂絶縁膜を貫通する第2のコンタクトホールとが連通して構成され、
前記第2のコンタクトホールの開口寸法は前記第1のコンタクトホールの開口寸法より大きく、
前記画素ドレインコンタクトホールの底部は前記第2のコンタクトホールの底部に相当し、
前記コンタクト導電膜は、前記第1のコンタクトホールを埋め込むとともに、前記第2のコンタクトホールの底部に露出する前記無機系絶縁膜上を覆うように配設される、請求項1記載の電気光学表示装置。 - 前記第2のコンタクトホールは、その底部の寸法よりも開口端の寸法が大きくなるように内壁がなだらかに傾斜して断面形状がすり鉢状をなす、請求項2記載の電気光学表示装置。
- 前記コンタクト導電膜は、
Cr(クロム)、Mo(モリブデン)、Ti(チタン)およびW(タングステン)から選択される金属膜を含む、請求項1記載の電気光学表示装置。 - 絶縁性基板と、前記絶縁性基板上にマトリックス状に配設され、薄膜トランジスタが電気的に接続された画素電極をそれぞれ有する複数の表示画素とを有したアクティブマトリックス基板を備えた電気光学表示装置の製造方法であって、
(a)前記薄膜トランジスタのドレイン電極上を含めて前記絶縁性基板上全体を覆う無機系絶縁膜を形成する工程と、
(b)前記無機系絶縁膜上全体を覆う有機系樹脂絶縁膜を形成する工程と、
(c)前記ドレイン電極上に対応する前記有機系樹脂絶縁膜の部分に、前記有機系樹脂絶縁膜を貫通して前記無機系絶縁膜に達する第1の開口部と、前記第1の開口部の開口寸法より大きく前記第1の開口部に対して同心状となるように設けられ、前記有機系樹脂絶縁膜を貫通せず、その底部の端縁部下に前記有機系樹脂絶縁膜が残る第2の開口部とを形成する工程と、
(d)前記第1の開口部をマスクとして、前記無機系絶縁膜をエッチングすることで、前記無機系絶縁膜を貫通する第1のコンタクトホールを形成する工程と、
(e)酸素を用いたアッシング法を用いて、前記有機系樹脂絶縁膜を全体的に薄膜化するとともに、前記第2の開口部を、その底部の寸法よりも開口端の寸法が大きくなるように内壁がなだらかに傾斜して断面形状がすり鉢状をなすように加工して、前記有機系樹脂絶縁膜を貫通する第2のコンタクトホールを形成して、前記第1および第2のコンタクトホールが連通した画素ドレインコンタクトホールを形成する工程と、
(f)前記第2のコンタクトホールの底部の前記第1のコンタクトホールを埋め込むとともに、前記第2のコンタクトホールの底部に露出する前記無機系絶縁膜上を覆い、前記第2のコンタクトホールの底部からはみ出さないように配設された金属膜で構成されるコンタクト導電膜を形成する工程と、
(g)前記有機系樹脂絶縁膜上を覆うとともに、前記画素ドレインコンタクトホールの内壁および前記コンタクト導電膜上を覆うように前記画素電極を形成する工程と、を備える電気光学表示装置の製造方法。 - 前記工程(b)は、
前記有機系樹脂絶縁膜を感光性樹脂を用いて形成する工程を含み、
前記工程(c)は、
第1の露光によって前記有機系樹脂絶縁膜の前記第1の開口部に対応する部分を前記無機系絶縁膜に達するまで感光させて第1の露光領域を形成する工程と、
第2の露光によって前記有機系樹脂絶縁膜の前記第2の開口部に対応する部分を所定深さまで感光させて第2の露光領域を形成する工程と、を含み、
前記第2の露光は、露光強度が、前記第1の露光における露光強度の20〜40%となるハーフ露光を含む、請求項5記載の電気光学表示装置の製造方法。
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JP2005184408A JP4772395B2 (ja) | 2005-06-24 | 2005-06-24 | 電気光学表示装置およびその製造方法 |
TW095104063A TWI298543B (en) | 2005-06-24 | 2006-02-07 | Electro-optic display and manufacturing method thereof |
US11/349,146 US7514712B2 (en) | 2005-06-24 | 2006-02-08 | Electro-optic display and connection between drain electrode and pixel electrode |
CN200610073741.8A CN100479172C (zh) | 2005-06-24 | 2006-04-03 | 电光显示装置及其制造方法 |
KR1020060052894A KR100841379B1 (ko) | 2005-06-24 | 2006-06-13 | 전기광학 표시장치 및 그 제조방법 |
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JP2007005585A JP2007005585A (ja) | 2007-01-11 |
JP2007005585A5 JP2007005585A5 (ja) | 2008-04-17 |
JP4772395B2 true JP4772395B2 (ja) | 2011-09-14 |
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---|---|---|---|---|
KR101261450B1 (ko) * | 2006-02-06 | 2013-05-10 | 삼성디스플레이 주식회사 | 액정 표시 장치와 그 제조 방법 |
JP2009003328A (ja) * | 2007-06-25 | 2009-01-08 | Mitsubishi Electric Corp | 表示装置及びその製造方法 |
TWI606520B (zh) | 2008-10-31 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TW202230814A (zh) * | 2011-05-05 | 2022-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI487120B (zh) * | 2011-08-16 | 2015-06-01 | 群創光電股份有限公司 | 薄膜電晶體基板與其所組成之顯示裝置 |
TWI453519B (zh) | 2011-10-03 | 2014-09-21 | Chunghwa Picture Tubes Ltd | 顯示面板之畫素結構及其製作方法 |
CN104009937B (zh) * | 2013-02-22 | 2018-03-02 | 中兴通讯股份有限公司 | 一种增强型传输选择标准配置信息传输方法及装置 |
US10529740B2 (en) * | 2013-07-25 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including semiconductor layer and conductive layer |
CN103531096B (zh) * | 2013-10-17 | 2016-07-06 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示面板和显示装置 |
US10347702B2 (en) * | 2014-10-22 | 2019-07-09 | Lg Display Co., Ltd. | Flexible thin film transistor substrate and flexible organic light emitting display device |
CN110518021A (zh) * | 2019-09-10 | 2019-11-29 | 京东方科技集团股份有限公司 | 显示基板及其制备方法和显示面板 |
CN112928124B (zh) * | 2019-12-06 | 2023-05-26 | 群创光电股份有限公司 | 连接结构及包括其的显示装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0922897A (ja) | 1995-07-07 | 1997-01-21 | Seiko Epson Corp | 半導体装置の製造方法 |
JP3307181B2 (ja) * | 1995-07-31 | 2002-07-24 | ソニー株式会社 | 透過型表示装置 |
JP3272212B2 (ja) * | 1995-09-29 | 2002-04-08 | シャープ株式会社 | 透過型液晶表示装置およびその製造方法 |
JPH09105952A (ja) * | 1995-10-11 | 1997-04-22 | Toshiba Electron Eng Corp | アクティブマトリクス型液晶表示装置 |
JPH10170951A (ja) | 1996-12-11 | 1998-06-26 | Sharp Corp | 液晶表示装置の製造方法 |
JPH10268360A (ja) * | 1997-03-26 | 1998-10-09 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JPH11103069A (ja) * | 1997-07-29 | 1999-04-13 | Sharp Corp | 接続構造およびその製造方法 |
KR100690001B1 (ko) * | 2000-02-21 | 2007-03-08 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
KR100746140B1 (ko) * | 2000-12-28 | 2007-08-03 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
KR100796756B1 (ko) * | 2001-11-12 | 2008-01-22 | 삼성전자주식회사 | 반도체 소자의 접촉부 및 그 제조 방법과 이를 포함하는표시 장치용 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
JP2004233683A (ja) * | 2003-01-30 | 2004-08-19 | Sony Corp | 液晶表示装置の製造方法 |
JP4818576B2 (ja) | 2003-07-03 | 2011-11-16 | 三菱電機株式会社 | 薄膜トランジスタおよび薄膜トランジスタを備えた表示装置 |
JP2005062802A (ja) | 2003-07-28 | 2005-03-10 | Advanced Display Inc | 薄膜トランジスタアレイ基板の製法 |
KR20050054345A (ko) | 2003-12-04 | 2005-06-10 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 어레이 기판 및 그 제조 방법 |
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WO2020013379A1 (ko) * | 2018-07-11 | 2020-01-16 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
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TW200701471A (en) | 2007-01-01 |
US20060289866A1 (en) | 2006-12-28 |
US7514712B2 (en) | 2009-04-07 |
KR100841379B1 (ko) | 2008-06-26 |
KR20060135502A (ko) | 2006-12-29 |
TWI298543B (en) | 2008-07-01 |
CN100479172C (zh) | 2009-04-15 |
JP2007005585A (ja) | 2007-01-11 |
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