JP2009054841A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2009054841A JP2009054841A JP2007220965A JP2007220965A JP2009054841A JP 2009054841 A JP2009054841 A JP 2009054841A JP 2007220965 A JP2007220965 A JP 2007220965A JP 2007220965 A JP2007220965 A JP 2007220965A JP 2009054841 A JP2009054841 A JP 2009054841A
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- resistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】 半導体基板の表面に、半導体基板とは逆の導電型であるエピタキシャル層を形成し、抵抗となる部分以外にトレンチを形成し、前記トレンチに絶縁膜を埋め込むことで互いに分離された抵抗体を3次元的に形成する。
【選択図】 図1
Description
(1)第1導電型の半導体基板と、前記半導体基板上に形成された前記半導体基板とは逆の第2導電型のエピタキシャル層をその外形が概ね立体的なUの字を有する抵抗体となるように配置された2種類の深さの異なるトレンチと、前記トレンチにより形成された抵抗体と抵抗体を電気的に絶縁する絶縁膜と、前記抵抗体の両端に配置された金属配線とコンタクトを取るために不純物の濃度を高めた第2導電型の高濃度領域と、からなることを特徴とする半導体装置とした。
(2)前記N型半導体基板上に形成されたP型エピタキシャル層の厚みを0.1um〜10umとしたことを特徴とする半導体装置とした。
(3)前記N型半導体基板上に形成されたP型エピタキシャル層の比抵抗を0.01〜150[Ωcm]としたことを特徴とする半導体装置とした。
(4)前記P型高濃度領域に導入する不純物がBF2としたことを特徴とする半導体装置とした。
(5)前記P型高濃度領域に導入する不純物がBとしたことを特徴とする半導体装置とした。
(6)前記P型高濃度領域に導入する不純物の濃度が1E15[atm/cm3]以上であることを特徴とする半導体装置とした。
(7)第1導電型の半導体基板上に前記半導体基板とは逆の第2導電型のエピタキシャル層を形成する工程と、前記エピタキシャル層の抵抗体とならない部分に深さの異なる2種類のトレンチを設ける工程と、前記トレンチにより形成された抵抗体と抵抗体を電気的に絶縁する絶縁膜を配置する工程と、前記抵抗となる部分の前記エピタキシャル層と金属配線と十分なコンクトを取れるような不純物の濃度を高めた第2導電型の高濃度領域を形成する工程と、からなることを特徴とする半導体装置の製造方法とした。
75 半導体基板
76 フィールド領域
77 第1層抵抗
78 層間絶縁膜
79 保護膜
201 N型半導体シリコン基板
202 P型であるエピタキシャル層
203 層間絶縁膜
204 P型である高不純物濃度領域
205 第1トレンチ部
206 第2トレンチ部
207 抵抗体
Claims (7)
- 第1導電型の半導体基板と、
前記半導体基板上に形成された前記半導体基板とは逆の第2導電型のエピタキシャル層をその外形が概ね立体的なUの字を有する抵抗体となるように配置された2種類の深さの異なるトレンチと、
前記トレンチにより形成された抵抗体と抵抗体を電気的に絶縁する絶縁膜と、
前記抵抗体の両端に配置された金属配線とコンタクトを取るために不純物の濃度を高めた第2導電型の高濃度領域と、からなることを特徴とする半導体装置。 - 前記エピタキシャル層の厚みを0.1um〜10umとしたことを特徴とする請求項1記載の半導体装置。
- 前記エピタキシャル層の比抵抗を0.01〜150[Ωcm]としたことを特徴とする請求項2記載の半導体装置。
- 前記第2導電型の高濃度領域に導入する不純物がBF2としたことを特徴とする請求項1記載の半導体装置。
- 前記第2導電型の高濃度領域に導入する不純物がBとしたことを特徴とする請求項1記載の半導体装置。
- 前記第2導電型の高濃度領域に導入する不純物の濃度が1E15[atm/cm3]以上であることを特徴とする請求項1記載の半導体装置。
- 第1導電型の半導体基板上に前記半導体基板とは逆の第2導電型のエピタキシャル層を形成する工程と、
前記エピタキシャル層の抵抗体とならない部分に深さの異なる2種類のトレンチを設ける工程と、
前記トレンチにより形成された抵抗体と抵抗体を電気的に絶縁する絶縁膜を配置する工程と、
前記抵抗となる部分の前記エピタキシャル層と金属配線と十分なコンクトを取れるような不純物の濃度を高めた第2導電型の高濃度領域を形成する工程と、からなることを特徴とする半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007220965A JP5468730B2 (ja) | 2007-08-28 | 2007-08-28 | 半導体装置およびその製造方法 |
US12/229,819 US7855433B2 (en) | 2007-08-28 | 2008-08-27 | Semiconductor device |
TW097132819A TWI438890B (zh) | 2007-08-28 | 2008-08-27 | 半導體裝置 |
KR1020080084463A KR101477810B1 (ko) | 2007-08-28 | 2008-08-28 | 반도체 디바이스 및 그 제조 방법 |
CN2008102134005A CN101378061B (zh) | 2007-08-28 | 2008-08-28 | 半导体器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007220965A JP5468730B2 (ja) | 2007-08-28 | 2007-08-28 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009054841A true JP2009054841A (ja) | 2009-03-12 |
JP5468730B2 JP5468730B2 (ja) | 2014-04-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007220965A Expired - Fee Related JP5468730B2 (ja) | 2007-08-28 | 2007-08-28 | 半導体装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7855433B2 (ja) |
JP (1) | JP5468730B2 (ja) |
KR (1) | KR101477810B1 (ja) |
CN (1) | CN101378061B (ja) |
TW (1) | TWI438890B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014045128A (ja) * | 2012-08-28 | 2014-03-13 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US9012976B2 (en) | 2012-07-27 | 2015-04-21 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023115421A1 (zh) * | 2021-12-22 | 2023-06-29 | 华为技术有限公司 | 芯片及其形成方法、电子设备 |
KR102518320B1 (ko) * | 2022-03-08 | 2023-04-06 | 주식회사 서플러스글로벌 | 측정표준웨이퍼의 제조방법 및 전자소자에 사용되는 산화물의 c-v특성을 측정하는 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63122147A (ja) * | 1986-11-10 | 1988-05-26 | Nec Corp | 半導体装置 |
JPH05291506A (ja) * | 1992-04-13 | 1993-11-05 | Toshiba Corp | 半導体集積回路装置及びその製造方法 |
JP2001267509A (ja) * | 2000-03-16 | 2001-09-28 | Denso Corp | 半導体装置及びその製造方法 |
JP2003007841A (ja) * | 2001-06-19 | 2003-01-10 | Seiko Instruments Inc | 半導体装置の製造方法 |
WO2006020887A1 (en) * | 2004-08-13 | 2006-02-23 | Raytheon Company | Integrated circuit resistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0452720A3 (en) * | 1990-04-02 | 1994-10-26 | Nat Semiconductor Corp | A semiconductor structure and method of its manufacture |
JP3124473B2 (ja) * | 1994-08-19 | 2001-01-15 | セイコーインスツルメンツ株式会社 | 半導体装置とその製造方法 |
-
2007
- 2007-08-28 JP JP2007220965A patent/JP5468730B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-27 TW TW097132819A patent/TWI438890B/zh not_active IP Right Cessation
- 2008-08-27 US US12/229,819 patent/US7855433B2/en not_active Expired - Fee Related
- 2008-08-28 CN CN2008102134005A patent/CN101378061B/zh not_active Expired - Fee Related
- 2008-08-28 KR KR1020080084463A patent/KR101477810B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63122147A (ja) * | 1986-11-10 | 1988-05-26 | Nec Corp | 半導体装置 |
JPH05291506A (ja) * | 1992-04-13 | 1993-11-05 | Toshiba Corp | 半導体集積回路装置及びその製造方法 |
JP2001267509A (ja) * | 2000-03-16 | 2001-09-28 | Denso Corp | 半導体装置及びその製造方法 |
JP2003007841A (ja) * | 2001-06-19 | 2003-01-10 | Seiko Instruments Inc | 半導体装置の製造方法 |
WO2006020887A1 (en) * | 2004-08-13 | 2006-02-23 | Raytheon Company | Integrated circuit resistor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012976B2 (en) | 2012-07-27 | 2015-04-21 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP2014045128A (ja) * | 2012-08-28 | 2014-03-13 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US9136392B2 (en) | 2012-08-28 | 2015-09-15 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR20090023219A (ko) | 2009-03-04 |
US20090057830A1 (en) | 2009-03-05 |
KR101477810B1 (ko) | 2014-12-30 |
TW200935588A (en) | 2009-08-16 |
US7855433B2 (en) | 2010-12-21 |
CN101378061A (zh) | 2009-03-04 |
CN101378061B (zh) | 2012-02-15 |
JP5468730B2 (ja) | 2014-04-09 |
TWI438890B (zh) | 2014-05-21 |
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