JP2009016826A - 裏面照射イメージセンサ - Google Patents
裏面照射イメージセンサ Download PDFInfo
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- JP2009016826A JP2009016826A JP2008167599A JP2008167599A JP2009016826A JP 2009016826 A JP2009016826 A JP 2009016826A JP 2008167599 A JP2008167599 A JP 2008167599A JP 2008167599 A JP2008167599 A JP 2008167599A JP 2009016826 A JP2009016826 A JP 2009016826A
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- image sensor
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- photodiode
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- backside illuminated
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- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000012546 transfer Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000005360 phosphosilicate glass Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 claims 2
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 4
- 230000036211 photosensitivity Effects 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】半導体基板の表面の下に形成され、前記半導体基板の裏面から光が照射されて光電荷を生成するフォトダイオードと、前記半導体基板の表面の上部において前記フォトダイオードの上に形成され、裏面照射される光を反射させ、かつ、前記フォトダイオードの空乏領域をコントロールするバイアスが印加される反射ゲートと、前記フォトダイオードからピクセルのセンスノードに光電荷を伝達するトランスファゲートとを備える。
【選択図】図2
Description
204 フォトダイオード用N型ドーピング領域
206 フォトダイオード用P型ドーピング領域(ピンニング層)
210 トランスファゲート
212 反射ゲートポリシリコン
214 反射ゲート金属シリサイド膜
222 N+バッファ領域
224 N+フローティング拡散領域
244 マイクロレンズ
Claims (17)
- 半導体基板の表面の下に形成され、前記半導体基板の裏面から光が照射されて光電荷を生成するフォトダイオードと、
前記半導体基板の表面の上部において前記フォトダイオード上に形成され、裏面照射される光を反射させ、かつ、前記フォトダイオードの空乏領域をコントロールするバイアスが印加される反射ゲートと、
前記フォトダイオードからピクセルのセンスノードに光電荷を伝達するトランスファゲートと
を備えることを特徴とする裏面照射イメージセンサ。 - 前記反射ゲートが、裏面照射される光の損失を減らすための金属シリサイド膜又は金属膜を備えることを特徴とする請求項1に記載の裏面照射イメージセンサ。
- 前記フォトダイオードから前記センスノードへの電荷転送効率及びタイミングマージンを増大させるために、前記フォトダイオードと前記トランスファゲートとの間の前記半導体基板の表面の下部に形成されたバッファ領域を更に備えることを特徴とする請求項1に記載の裏面照射イメージセンサ。
- 前記反射ゲートが、ネガティブバイアスが印加されて空乏領域の幅をコントロールすることを特徴とする請求項1〜3のいずれか1項に記載の裏面照射イメージセンサ。
- 前記フォトダイオードが、前記半導体基板の表面から発生している暗電流の改善のためのピンニング層を備えることを特徴とする請求項1〜3のいずれか1項に記載の裏面照射イメージセンサ。
- 前記センスノードが、フローティング拡散領域であることを特徴とする請求項1〜3のいずれか1項に記載の裏面照射イメージセンサ。
- 前記センスノードが、少なくとも2つのフォトダイオードを共有することを特徴とする請求項1〜3のいずれか1項に記載の裏面照射イメージセンサ。
- 前記反射ゲートに印加されるバイアスを生成するネガティブチャージポンプ回路が共に集積化されたことを特徴とする請求項1〜3のいずれか1項に記載の裏面照射イメージセンサ。
- 前記センスノードのkTCノイズの除去のために、CDS信号処理技術を利用することを特徴とする請求項1〜3のいずれか1項に記載の裏面照射イメージセンサ。
- 前記フォトダイオード、前記反射ゲート、及び前記トランスファゲートが、CMOS工程技術により製造されることを特徴とする請求項1〜3のいずれか1項に記載の裏面照射イメージセンサ。
- 前記反射ゲートが、絶縁層を隔てて前記トランスファゲートと一部オーバーラップされることを特徴とする請求項1又は2に記載の裏面照射イメージセンサ。
- 前記半導体基板の裏面に形成されているマイクロレンズを更に備えることを特徴とする請求項1に記載の裏面照射イメージセンサ。
- 前記半導体基板の裏面に形成されている非反射層を更に備えることを特徴とする請求項1に記載の裏面照射イメージセンサ。
- 前記非反射層が、絶縁層であることを特徴とする請求項13に記載の裏面照射イメージセンサ。
- 前記非反射層が、酸化膜、窒化膜、又はこれらの積層膜からなることを特徴とする請求項13に記載の裏面照射イメージセンサ。
- 前記酸化膜が、BPSG(BoroPhosphoSilicate Glass)、PSG(PhosphoSilicate Glass)、BSG(BoroSilicate Glass)、USG(Un−doped Silicate Glass)、TEOS(Tetra Ethyle Ortho Silicate)、HDP(High Density Plasma)膜、シリコン酸化膜(SiO2)の中から選択されるいずれか1つの膜からなることを特徴とする請求項15に記載の裏面照射イメージセンサ。
- 前記窒化膜が、シリコン窒化膜(SixNy、ここで、x、yは自然数)又はシリコン酸化窒化膜(SixOyN2、ここで、x、yは自然数)からなることを特徴とする請求項15に記載の裏面照射イメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0065368 | 2007-06-29 | ||
KR1020070065368A KR100870821B1 (ko) | 2007-06-29 | 2007-06-29 | 후면 조사 이미지 센서 |
Related Child Applications (1)
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JP2013097690A Division JP5723921B2 (ja) | 2007-06-29 | 2013-05-07 | 裏面照射イメージセンサを動作させる方法 |
Publications (3)
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JP2009016826A true JP2009016826A (ja) | 2009-01-22 |
JP2009016826A5 JP2009016826A5 (ja) | 2010-12-16 |
JP5358130B2 JP5358130B2 (ja) | 2013-12-04 |
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JP2008167599A Active JP5358130B2 (ja) | 2007-06-29 | 2008-06-26 | 裏面照射イメージセンサ |
JP2013097690A Active JP5723921B2 (ja) | 2007-06-29 | 2013-05-07 | 裏面照射イメージセンサを動作させる方法 |
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Country Status (5)
Country | Link |
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US (2) | US7847326B2 (ja) |
EP (1) | EP2009696A3 (ja) |
JP (2) | JP5358130B2 (ja) |
KR (1) | KR100870821B1 (ja) |
CN (2) | CN101335282B (ja) |
Cited By (6)
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JP2014131356A (ja) * | 2014-03-27 | 2014-07-10 | Canon Inc | 固体撮像装置 |
US8841707B2 (en) | 2009-12-16 | 2014-09-23 | Kabushiki Kaisha Toshiba | Solid-state imaging device and method of controlling the same |
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WO2020246133A1 (ja) * | 2019-06-07 | 2020-12-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
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EP3404716A2 (en) | 2017-04-27 | 2018-11-21 | Renesas Electronics Corporation | Semiconductor device and method for manufacturing the same |
WO2020246133A1 (ja) * | 2019-06-07 | 2020-12-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
Also Published As
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CN102709299A (zh) | 2012-10-03 |
US20110108709A1 (en) | 2011-05-12 |
JP2013179334A (ja) | 2013-09-09 |
CN101335282A (zh) | 2008-12-31 |
JP5723921B2 (ja) | 2015-05-27 |
JP5358130B2 (ja) | 2013-12-04 |
EP2009696A2 (en) | 2008-12-31 |
CN102709299B (zh) | 2014-11-05 |
US20090001494A1 (en) | 2009-01-01 |
CN101335282B (zh) | 2012-07-04 |
KR100870821B1 (ko) | 2008-11-27 |
US7847326B2 (en) | 2010-12-07 |
US8163591B2 (en) | 2012-04-24 |
EP2009696A3 (en) | 2010-12-29 |
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