CN101335282A - 背照式图像传感器 - Google Patents
背照式图像传感器 Download PDFInfo
- Publication number
- CN101335282A CN101335282A CNA2008101275449A CN200810127544A CN101335282A CN 101335282 A CN101335282 A CN 101335282A CN A2008101275449 A CNA2008101275449 A CN A2008101275449A CN 200810127544 A CN200810127544 A CN 200810127544A CN 101335282 A CN101335282 A CN 101335282A
- Authority
- CN
- China
- Prior art keywords
- image sensor
- back side
- side illumination
- illumination image
- sensor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000012546 transfer Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000005286 illumination Methods 0.000 claims description 36
- 230000003287 optical effect Effects 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000005360 phosphosilicate glass Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000005368 silicate glass Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000006872 improvement Effects 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
一种背照式图像传感器,包括:光电二极管,形成在半导体衬底的顶表面之下,用于接收从半导体衬底背侧照射的光以产生光电荷;反射栅极,形成在半导体衬底正面的上表面上的光电二极管上,用于反射从衬底背侧照射的光和接收偏压以控制光电二极管的耗尽区;和转移栅极,用于将光电荷从光电二极管转移至像素的感测结点。
Description
相关申请
本发明要求2007年6月29日提交的韩国专利申请2007-0065368的优先权,其全部内容通过引入并入本文。
技术领域
本发明涉及一种图像传感器,更具体涉及可用于有源像素传感器(APS)如互补金属氧化物半导体(CMOS)图像传感器或电荷耦合器件(CCD)图像传感器的背照式图像传感器。
背景技术
图像传感器是将光学图像转化为电信号的半导体器件。图像传感器包括用于感光的光接收部件(通常称为光电二极管)和用于将所感测的光处理为电信号的逻辑电路。
图像传感器的像素包括用于接收光以产生光电荷的光电二极管和用于将该光电荷转移至像素的感测结点(node)的电荷转移栅极。
传统的图像传感器具有正面照射结构,其中光电二极管形成在衬底表面之下,逻辑电路形成在衬底之上,使得光照射在衬底的顶表面上。然而,由于在光电二极管上方形成的多个上层导致光损失,因此所述光电二极管的光响应特性差。而且,由于光子的穿透深度较大,难以将入射光通量(flux)转化为光电荷。
为了克服这些限制,已经提出从衬底的背侧照射衬底的背照式图像传感器。
图1是美国专利公开No.2006-0068586 A1中公开的传统背照式图像传感器的截面图。
参考图1,通过在具有硅/掩埋氧化物/硅结构的绝缘体上硅(SOI)上实施预定工艺,在p-型硅130上形成用作结阴极的n-阱120,并且在其上形成逻辑电路(未显示)和金属线150。附着支撑衬底140,并且对SOI晶片背面上的硅进行抛光直至掩埋氧化物层。在所得结构上形成抗反射层220和微透镜230。因此,光子从衬底的背面入射。传统的背照式图像传感器还包括用于防止串扰的p-型离子注入区域125以及第一和第二绝缘层160A和160B。
然而,金属反射器240必须在对应于光电二极管的位置处单独地提供,以降低当长波长的光穿过厚度降低的硅(衬底)时所导致的信号损失。因此,必须增加金属工艺或必须对金属布置加以限制。
另外,在传统背照式图像传感器中,根据工艺条件(掺杂浓度、深度等)确定光电二极管的内部电势,并且确定耗尽区的宽度。因此,当耗尽区不在衬底的背面附近形成时,产生串扰。即,在衬底背面周围产生的光电荷没有到达光电二极管的耗尽区而移到相邻的像素。而且,对短波长的灵敏度较差。
发明内容
本发明的实施方案涉及提供不需要单独的金属反射层的背照式图像传感器。
本发明的实施方案还涉及提供背照式图像传感器,其可控制光电二极管的耗尽区的宽度,由此改善串扰特征。
本发明的实施方案还涉及提供在将由光电二极管产生的光电荷转移至像素感测结点时具有改善的效率和时序容限(timing margin)的背照式图像传感器。
根据本发明的一个方面,提供一种背照式图像传感器,其包括:光电二极管,其形成在半导体衬底的顶表面之下,用于接收由半导体衬底背侧照射的光以产生光电荷;反射栅极,其形成在半导体衬底的正面的上表面上的光电二极管上,用于反射由衬底背侧照射的光和接收偏压以控制光电二极管的耗尽区;和转移栅极,其用于将光电荷从光电二极管转移至像素的感测结点。
附图说明
图1是美国专利公开No.2006-0068586中公开的传统背照式图像传感器的截面图。
图2是根据本发明一个实施方案的背照式图像传感器的截面图。
图3是根据本发明另一个实施方案的背照式图像传感器的截面图。
具体实施方式
以下,将参考附图详细描述根据本发明实施方案的背照式图像传感器,使得本领域技术人员能够容易地实施本发明。
图2是根据本发明一个实施方案的背照式图像传感器的截面图。
参考图2,在p-型硅衬底202的顶表面之下形成具有n-型掺杂区域204和p-型掺杂区域206的光电二极管。p-型掺杂区域206改善硅表面上的暗电流并且通常称为钉扎层(pinning layer)。光电二极管可仅仅配置有n-型掺杂区域204,而省略p-型掺杂区域206。
衬底202可使用另一种半导体材料替代硅。
在衬底202的背侧上形成微透镜244。微透镜244将从衬底202背侧照射的光集中于光电二极管。绝缘层242形成在微透镜244和衬底202之间。绝缘层242包括氧化物层、氮化物层以及它们的堆叠结构中的一种。氧化物层可包括选自以下的一层:硼磷硅酸盐玻璃(BPSG)层、磷硅酸盐玻璃(PSG)层、硼硅玻璃(BSG)、未掺杂的硅酸盐玻璃(USG)层、正硅酸四乙酯(TEOS)层、高密度等离子体(HDP)层和氧化硅(SiO2)层。氮化物层可包括其中x和y是自然数的氮化硅(SixNy)层或其中x、y和z是自然数的氧氮化硅(SixOyNz)层。绝缘层242可作为抗反射层。用于实现彩色图像的滤色器可形成在微透镜244和绝缘层242之间。
同时使用常规方法在衬底上形成包含转移栅极210的逻辑电路。而且,在光电二极管上还形成第一和第二反射栅极212和214。第一和第二反射栅极212和214具有多晶硅层和金属硅化物层的堆叠结构。金属硅化物层可包括硅化钨层。可使用金属层如钨层来替代金属硅化物层。而且,反射栅极可仅仅包括金属硅化物层或金属层,而没有多晶硅层。由此,反射栅极可由具有高反射率的导电材料形成。
反射栅极通过恰在积分时间(integration time)之前立即接收偏压来控制光电二极管耗尽区的尺寸。即,传统的图像传感器基于光电二极管的工艺条件确定耗尽区,而根据本发明实施方案的图像传感器可改善串扰特征,这是由于耗尽区可通过反射栅极扩展直至衬底的背侧附近。
由于反射栅极,耗尽区可形成直至衬底背侧的附近。由于当短波长(蓝波长)的光照射在衬底背侧上时,在衬底背侧周围产生的光电荷能够积累,所以对短波长的光敏度得到改善。
施加于反射栅极的偏压可采用利用诸如负电荷泵的电路所产生的负偏压。负电荷泵可集成在图像传感器芯片内。
由于反射栅极包括可防止光透射和反射光的金属硅化物层,因此从衬底背侧照射的长波长光的信号损失可得到降低。因此,不必在衬底的顶表面提供单独的金属反射层,并且没有对金属布置施加限制。
由于反射栅极覆盖光电二极管,因此其保护光电二极管在栅极蚀刻期间免于等离子体损伤和免于在其它工艺期间遭受损伤。
当转移栅极210开启时,光电二极管中积累的光电荷转移至像素的感测结点,即N+浮置扩散区域224。N+缓冲区域222形成在光电二极管与转移栅极边缘之间的衬底的顶表面之下以积累光电荷。N+缓冲区域222用于改善光电荷转移效率和时序容限。省略N+缓冲区域222的光电二极管可沿转移栅极的边缘形成。这种情况下,光电二极管区域可扩展到可占据N+缓冲区域222的程度。
图3是根据本发明另一个实施方案的背照式图像传感器的截面图。
图2和3中相同的附图标记表示相同的元件,其描述将省略。
参考图3,第一反射栅极212和第二反射栅极214与转移栅极(Tx)部分重叠,绝缘层302插入其间,省略图2的缓冲区域222。
如图3所示,省略缓冲掺杂区域,并且第一反射栅极212和第二反射栅极214与转移栅极(Tx)部分重叠,因此可确保用于光电二极管的空间,并且可防止光电荷转移效率和时序容限的降低。
如上所述,具有反射栅极的改善的背照式图像传感器可应用于4-晶体管(4T)像素和3T像素,其为本领域技术人员所公知。即,反射栅极加入4T像素或3T像素。而且,图像传感器可应用于其中两个或更多个光电二极管共有一个浮置扩散电路和像素电路的方案中。
而且,用于除去电容器(kTC)噪声中热噪声的典型的相关双采样(CDS)工艺(correlated double sampling process)可应用于上述具有反射栅极的改善的背照式图像传感器。
本发明可用于CCD图像传感器以及使用CMOS制造技术制造的CMOS图像传感器。
通过采用背照式结构,当在衬底正面设计逻辑电路和金属线的布局时,上述本发明不需要考虑用于入射光的路经。
而且,通过使用控制偏压以及光电二极管的本征电势来控制耗尽区的宽度,本发明可改善光电荷产生效率、对短波长的光敏度和串扰特征。
而且,由于反射栅极包括作为栅极材料的金属硅化物层或金属层,因此从衬底背侧照射的长波长光的信号损失可得到降低。由此,不必在衬底正面上提供单独的金属反射层。
而且,由于反射栅极覆盖光电二极管的顶部,因此可保护光电二极管在加工期间免于损伤。
虽然本发明已经对于具体的实施方案进行了描述,但是本领域技术人员显然知道可做出各种变化和改变,而没有脱离由所附权利要求所限定的本发明的精神和范围。
Claims (17)
1.一种背照式图像传感器,包括:
光电二极管,所述光电二极管形成在半导体衬底的顶表面之下,用于接收从所述半导体衬底背侧照射的光以产生光电荷;
反射栅极,所述反射栅极形成在所述半导体衬底正面的上表面上的所述光电二极管上,用于反射从所述衬底背侧照射的光和接收偏压以控制所述光电二极管的耗尽区;和
转移栅极,所述转移栅极用于将光电荷从所述光电二极管转移至像素的感测结点。
2.根据权利要求1所述的背照式图像传感器,其中所述反射栅极包括金属硅化物层或金属层,以减少从所述半导体衬底的背侧照射的光的损失。
3.根据权利要求1所述的背照式图像传感器,还包括在所述光电二极管和所述转移栅极之间的所述半导体衬底的表面之下形成的缓冲区域,以便改善在将所述光电荷从所述光电二极管转移至所述感测结点过程中的光电荷转移效率和时序容限。
4.根据权利要求1所述的背照式图像传感器,其中所述反射栅极接收负偏压并控制所述耗尽区的宽度。
5.根据权利要求1所述的背照式图像传感器,其中所述光电二极管包括用于改善在所述半导体衬底的表面产生的暗电流的钉扎层。
6.根据权利要求1所述的背照式图像传感器,其中所述感测结点是浮置扩散区域。
7.根据权利要求1所述的背照式图像传感器,其中所述感测结点由至少两个光电二极管共用。
8.根据权利要求1所述的背照式图像传感器,还包括集成在所述图像传感器中的负电荷泵电路以产生施加于所述反射栅极的偏压。
9.根据权利要求1所述的背照式图像传感器,其中所述背照式图像传感器采用相关双采样(CDS)工艺,用于除去所述感测结点的电容器(kTC)噪声中的热噪声。
10.根据权利要求1所述的背照式图像传感器,其中使用CMOS制造技术制造所述光电二极管、所述反射栅极和所述转移栅极。
11.根据权利要求1所述的背照式图像传感器,其中所述反射栅极与所述转移栅极部分重叠,同时在二者之间插入绝缘层。
12.根据权利要求1所述的背照式图像传感器,还包括在所述衬底的背侧上形成的微透镜。
13.根据权利要求1所述的背照式图像传感器,还包括在所述衬底背侧上形成的抗反射层。
14.根据权利要求13所述的背照式图像传感器,其中所述抗反射层是绝缘层。
15.根据权利要求13所述的背照式图像传感器,其中所述抗反射层包括氧化物层、氮化物层以及它们的堆叠结构中的一种。
16.根据权利要求15所述的背照式图像传感器,其中所述氧化物层包括选自以下中的一层:硼磷硅酸盐玻璃(BPSG)层、磷硅酸盐玻璃(PSG)层、硼硅玻璃(BSG)、未掺杂的硅酸盐玻璃(USG)层、正硅酸四乙酯(TEOS)层、高密度等离子体(HDP)层和二氧化硅(SiO2)层。
17.根据权利要求15所述的背照式图像传感器,其中所述氮化物层包括其中x和y是自然数的氮化硅(SixNy)层或其中x、y和z是自然数的氧氮化硅(SixOyNz)层。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070065368 | 2007-06-29 | ||
KR10-2007-0065368 | 2007-06-29 | ||
KR1020070065368A KR100870821B1 (ko) | 2007-06-29 | 2007-06-29 | 후면 조사 이미지 센서 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210151627.8A Division CN102709299B (zh) | 2007-06-29 | 2008-06-27 | 背照式图像传感器的像素 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101335282A true CN101335282A (zh) | 2008-12-31 |
CN101335282B CN101335282B (zh) | 2012-07-04 |
Family
ID=39743135
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101275449A Active CN101335282B (zh) | 2007-06-29 | 2008-06-27 | 背照式图像传感器 |
CN201210151627.8A Active CN102709299B (zh) | 2007-06-29 | 2008-06-27 | 背照式图像传感器的像素 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210151627.8A Active CN102709299B (zh) | 2007-06-29 | 2008-06-27 | 背照式图像传感器的像素 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7847326B2 (zh) |
EP (1) | EP2009696A3 (zh) |
JP (2) | JP5358130B2 (zh) |
KR (1) | KR100870821B1 (zh) |
CN (2) | CN101335282B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102280458A (zh) * | 2010-06-11 | 2011-12-14 | 英属开曼群岛商恒景科技股份有限公司 | 背面照光传感器 |
CN103441133A (zh) * | 2013-08-30 | 2013-12-11 | 格科微电子(上海)有限公司 | 背照式图像传感器及降低背照式图像传感器暗电流的方法 |
CN104201180A (zh) * | 2014-07-11 | 2014-12-10 | 格科微电子(上海)有限公司 | 图像传感器及其形成方法 |
CN104659040A (zh) * | 2013-11-20 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | 一种全隔离背照式图像传感器及其制造方法 |
CN108428712A (zh) * | 2018-05-14 | 2018-08-21 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
KR100870821B1 (ko) * | 2007-06-29 | 2008-11-27 | 매그나칩 반도체 유한회사 | 후면 조사 이미지 센서 |
FR2935839B1 (fr) * | 2008-09-05 | 2011-08-05 | Commissariat Energie Atomique | Capteur d'images cmos a reflexion lumineuse |
US8822815B2 (en) * | 2008-11-04 | 2014-09-02 | Northrop Grumman Systems Corporation | Photovoltaic silicon solar cells |
JP2010206174A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびその製造方法ならびにカメラ |
JP2010206173A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびカメラ |
JP5615914B2 (ja) | 2009-06-08 | 2014-10-29 | エス.イー.エイ. メディカル システムズ インコーポレイテッド | アドミッタンス分光測定を用いた医療流体中の化合物の識別のためのシステム |
US9117712B1 (en) * | 2009-07-24 | 2015-08-25 | Mesa Imaging Ag | Demodulation pixel with backside illumination and charge barrier |
US8476681B2 (en) * | 2009-09-17 | 2013-07-02 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8680591B2 (en) | 2009-09-17 | 2014-03-25 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8464952B2 (en) * | 2009-11-18 | 2013-06-18 | Hand Held Products, Inc. | Optical reader having improved back-illuminated image sensor |
JP5523813B2 (ja) | 2009-12-16 | 2014-06-18 | 株式会社東芝 | 固体撮像装置 |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
JP2012094719A (ja) * | 2010-10-27 | 2012-05-17 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
JP2012104704A (ja) | 2010-11-11 | 2012-05-31 | Toshiba Corp | 固体撮像装置およびその製造方法 |
JP2012156310A (ja) * | 2011-01-26 | 2012-08-16 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US20130016203A1 (en) | 2011-07-13 | 2013-01-17 | Saylor Stephen D | Biometric imaging devices and associated methods |
US8710420B2 (en) * | 2011-11-08 | 2014-04-29 | Aptina Imaging Corporation | Image sensor pixels with junction gate photodiodes |
US8652868B2 (en) * | 2012-03-01 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implanting method for forming photodiode |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
WO2014151093A1 (en) | 2013-03-15 | 2014-09-25 | Sionyx, Inc. | Three dimensional imaging utilizing stacked imager devices and associated methods |
DE102013104968B4 (de) | 2013-05-14 | 2020-12-31 | ams Sensors Germany GmbH | Sensoranordnung mit einem siliziumbasierten optischen Sensor und einem Substrat für funktionelle Schichtsysteme |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
FR3018653B1 (fr) | 2014-03-11 | 2016-03-04 | E2V Semiconductors | Procede de capture d'image avec reduction de courant d'obscurite et faible consommation |
JP5847870B2 (ja) * | 2014-03-27 | 2016-01-27 | キヤノン株式会社 | 固体撮像装置 |
CN104078478B (zh) * | 2014-07-04 | 2017-10-27 | 豪威科技(上海)有限公司 | 背照式cmos影像传感器及其制造方法 |
WO2016209642A1 (en) * | 2015-06-22 | 2016-12-29 | The Research Foundation For The State University Of New York | Self-balancing position sensitive detector |
JP2018186211A (ja) | 2017-04-27 | 2018-11-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
FR3070792A1 (fr) | 2017-09-05 | 2019-03-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Detecteur photosensible a jonction 3d et grille autoalignees |
CN109671729B (zh) | 2017-10-17 | 2021-04-09 | 京东方科技集团股份有限公司 | 探测单元及其制作方法、平板探测器 |
JP7056183B2 (ja) * | 2018-01-31 | 2022-04-19 | ブラザー工業株式会社 | 定着装置 |
CN110120396B (zh) * | 2018-02-05 | 2021-06-15 | 联华电子股份有限公司 | 影像传感器 |
EP3982411A4 (en) * | 2019-06-07 | 2022-08-17 | Sony Semiconductor Solutions Corporation | IMAGING ELEMENT AND IMAGING DEVICE |
CN112397532A (zh) * | 2019-08-15 | 2021-02-23 | 天津大学青岛海洋技术研究院 | 一种高量子效率图像传感器像素结构及其制作方法 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61139061A (ja) * | 1984-12-11 | 1986-06-26 | Hamamatsu Photonics Kk | 半導体光検出装置 |
US4760031A (en) * | 1986-03-03 | 1988-07-26 | California Institute Of Technology | Producing CCD imaging sensor with flashed backside metal film |
JPH0766981B2 (ja) | 1987-03-26 | 1995-07-19 | 日本電気株式会社 | 赤外線センサ |
JPS6482667A (en) * | 1987-09-25 | 1989-03-28 | Mitsubishi Electric Corp | Solid-state image sensor |
JPH03153075A (ja) * | 1989-11-10 | 1991-07-01 | Mitsubishi Electric Corp | ショットキー型撮像素子 |
US5134274A (en) * | 1991-03-18 | 1992-07-28 | Hughes Aircraft Company | Two-sided solid-state imaging device |
CA2095739A1 (en) * | 1992-05-27 | 1993-11-28 | Michael J. Mcnutt | Charge skimming and variable integration time in focal plane arrays |
US5227313A (en) * | 1992-07-24 | 1993-07-13 | Eastman Kodak Company | Process for making backside illuminated image sensors |
US5244817A (en) * | 1992-08-03 | 1993-09-14 | Eastman Kodak Company | Method of making backside illuminated image sensors |
JP2797941B2 (ja) | 1993-12-27 | 1998-09-17 | 日本電気株式会社 | 光電変換素子とその駆動方法 |
JP3189550B2 (ja) * | 1993-12-29 | 2001-07-16 | 株式会社ニコン | 固体撮像装置およびその製造方法 |
US5670817A (en) * | 1995-03-03 | 1997-09-23 | Santa Barbara Research Center | Monolithic-hybrid radiation detector/readout |
JPH0945886A (ja) * | 1995-08-01 | 1997-02-14 | Sharp Corp | 増幅型半導体撮像装置 |
JPH0974178A (ja) * | 1995-09-07 | 1997-03-18 | Nikon Corp | 赤外線固体撮像装置および赤外線固体撮像装置駆動方法 |
US5754228A (en) * | 1995-09-25 | 1998-05-19 | Lockhead Martin Corporation | Rapid-sequence full-frame CCD sensor |
US5818052A (en) * | 1996-04-18 | 1998-10-06 | Loral Fairchild Corp. | Low light level solid state image sensor |
JPH11274465A (ja) * | 1998-01-20 | 1999-10-08 | Nikon Corp | 固体撮像装置、受光素子、並びに半導体の製造方法 |
JP4428831B2 (ja) * | 1999-07-30 | 2010-03-10 | Hoya株式会社 | 3次元画像検出装置 |
US6168965B1 (en) * | 1999-08-12 | 2001-01-02 | Tower Semiconductor Ltd. | Method for making backside illuminated image sensor |
US7265397B1 (en) * | 2000-08-30 | 2007-09-04 | Sarnoff Corporation | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture |
KR100470821B1 (ko) * | 2001-12-29 | 2005-03-08 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP3722367B2 (ja) | 2002-03-19 | 2005-11-30 | ソニー株式会社 | 固体撮像素子の製造方法 |
IL156497A (en) * | 2002-06-20 | 2007-08-19 | Samsung Electronics Co Ltd | Image sensor and method of fabricating the same |
JP4470364B2 (ja) * | 2002-10-17 | 2010-06-02 | ソニー株式会社 | 固体撮像素子及びカメラ装置 |
US7160753B2 (en) * | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
KR100595875B1 (ko) * | 2004-05-06 | 2006-07-03 | 매그나칩 반도체 유한회사 | 식각데미지를 감소시킨 시모스 이미지센서 제조방법 |
JP5244390B2 (ja) | 2004-09-17 | 2013-07-24 | カリフォルニア インスティテュート オブ テクノロジー | Soiウェーハで作ったバック照明式cmos撮像素子(imager)の製造方法 |
JP4867152B2 (ja) * | 2004-10-20 | 2012-02-01 | ソニー株式会社 | 固体撮像素子 |
JP4725095B2 (ja) | 2004-12-15 | 2011-07-13 | ソニー株式会社 | 裏面入射型固体撮像装置及びその製造方法 |
JP2006261638A (ja) * | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
JP4826111B2 (ja) * | 2005-03-17 | 2011-11-30 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
US7115924B1 (en) * | 2005-06-03 | 2006-10-03 | Avago Technologies Sensor Ip Pte. Ltd. | Pixel with asymmetric transfer gate channel doping |
US20070001100A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light reflection for backside illuminated sensor |
KR100660345B1 (ko) * | 2005-08-22 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그의 제조방법 |
US7973380B2 (en) * | 2005-11-23 | 2011-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for providing metal extension in backside illuminated sensor for wafer level testing |
JP5175030B2 (ja) | 2005-12-19 | 2013-04-03 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
KR100660714B1 (ko) * | 2005-12-29 | 2006-12-21 | 매그나칩 반도체 유한회사 | 백사이드 조명 구조의 씨모스 이미지 센서 및 그의 제조방법 |
KR100772316B1 (ko) * | 2006-04-28 | 2007-10-31 | 매그나칩 반도체 유한회사 | 플라즈마손상으로부터 포토다이오드를 보호하는 씨모스이미지센서의 제조 방법 |
US8704277B2 (en) * | 2006-05-09 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spectrally efficient photodiode for backside illuminated sensor |
JP4525671B2 (ja) * | 2006-12-08 | 2010-08-18 | ソニー株式会社 | 固体撮像装置 |
KR100806783B1 (ko) * | 2006-12-29 | 2008-02-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 형성 방법 |
KR100827447B1 (ko) * | 2007-01-24 | 2008-05-06 | 삼성전자주식회사 | 이미지 센서와 그 제조 방법 및 이미지 센싱 방법 |
US7485940B2 (en) * | 2007-01-24 | 2009-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Guard ring structure for improving crosstalk of backside illuminated image sensor |
KR100929349B1 (ko) * | 2007-01-30 | 2009-12-03 | 삼성전자주식회사 | 유기물 컬러 필터를 포함하지 않는 컬러 픽셀, 이미지 센서, 및 컬러 보간방법 |
KR100825808B1 (ko) * | 2007-02-26 | 2008-04-29 | 삼성전자주식회사 | 후면 조명 구조의 이미지 센서 및 그 이미지 센서 제조방법 |
US7498650B2 (en) * | 2007-03-08 | 2009-03-03 | Teledyne Licensing, Llc | Backside illuminated CMOS image sensor with pinned photodiode |
US7656000B2 (en) * | 2007-05-24 | 2010-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photodetector for backside-illuminated sensor |
KR100870821B1 (ko) * | 2007-06-29 | 2008-11-27 | 매그나칩 반도체 유한회사 | 후면 조사 이미지 센서 |
KR101439434B1 (ko) * | 2007-10-05 | 2014-09-12 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US7538307B1 (en) * | 2008-02-19 | 2009-05-26 | Teledyne Licensing Llc | Charge multiplication CMOS image sensor and method for charge multiplication |
US7875918B2 (en) * | 2009-04-24 | 2011-01-25 | Omnivision Technologies, Inc. | Multilayer image sensor pixel structure for reducing crosstalk |
-
2007
- 2007-06-29 KR KR1020070065368A patent/KR100870821B1/ko active IP Right Grant
-
2008
- 2008-06-24 EP EP08252168A patent/EP2009696A3/en not_active Withdrawn
- 2008-06-26 JP JP2008167599A patent/JP5358130B2/ja active Active
- 2008-06-27 CN CN2008101275449A patent/CN101335282B/zh active Active
- 2008-06-27 CN CN201210151627.8A patent/CN102709299B/zh active Active
- 2008-06-27 US US12/216,065 patent/US7847326B2/en active Active
-
2010
- 2010-11-30 US US12/956,975 patent/US8163591B2/en active Active
-
2013
- 2013-05-07 JP JP2013097690A patent/JP5723921B2/ja active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102280458A (zh) * | 2010-06-11 | 2011-12-14 | 英属开曼群岛商恒景科技股份有限公司 | 背面照光传感器 |
CN103441133A (zh) * | 2013-08-30 | 2013-12-11 | 格科微电子(上海)有限公司 | 背照式图像传感器及降低背照式图像传感器暗电流的方法 |
WO2015027742A1 (zh) * | 2013-08-30 | 2015-03-05 | 格科微电子(上海)有限公司 | 背照式图像传感器及降低背照式图像传感器暗电流的方法 |
CN103441133B (zh) * | 2013-08-30 | 2016-01-27 | 格科微电子(上海)有限公司 | 背照式图像传感器及降低背照式图像传感器暗电流的方法 |
US9613998B2 (en) | 2013-08-30 | 2017-04-04 | Galaxycore Shanghai Limited Corporation | Backside illumination image sensor and method for reducing dark current of backside illumination image sensor |
CN104659040A (zh) * | 2013-11-20 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | 一种全隔离背照式图像传感器及其制造方法 |
CN104201180A (zh) * | 2014-07-11 | 2014-12-10 | 格科微电子(上海)有限公司 | 图像传感器及其形成方法 |
CN108428712A (zh) * | 2018-05-14 | 2018-08-21 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102709299A (zh) | 2012-10-03 |
US20110108709A1 (en) | 2011-05-12 |
JP2013179334A (ja) | 2013-09-09 |
JP2009016826A (ja) | 2009-01-22 |
JP5723921B2 (ja) | 2015-05-27 |
JP5358130B2 (ja) | 2013-12-04 |
EP2009696A2 (en) | 2008-12-31 |
CN102709299B (zh) | 2014-11-05 |
US20090001494A1 (en) | 2009-01-01 |
CN101335282B (zh) | 2012-07-04 |
KR100870821B1 (ko) | 2008-11-27 |
US7847326B2 (en) | 2010-12-07 |
US8163591B2 (en) | 2012-04-24 |
EP2009696A3 (en) | 2010-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101335282B (zh) | 背照式图像传感器 | |
CN101740592B (zh) | 固态成像装置、固态成像装置的制造方法和电子设备 | |
CN102082153B (zh) | 固体摄像器件、其制造方法、照相机和电子设备 | |
KR100758321B1 (ko) | 포토다이오드 영역을 매립한 이미지 센서 및 그 제조 방법 | |
US7893468B2 (en) | Optical sensor including stacked photodiodes | |
US7883916B2 (en) | Optical sensor including stacked photosensitive diodes | |
US9818782B2 (en) | Image sensor and method for fabricating the same | |
US11152415B2 (en) | Image sensor with separation pattern and image sensor module including the same | |
US20140002700A1 (en) | Solid-state image sensor | |
US20120001286A1 (en) | Image sensor and package including the image sensor | |
US8212901B2 (en) | Backside illuminated imaging sensor with reduced leakage photodiode | |
KR102587498B1 (ko) | 이미지 센서 | |
US20180342543A1 (en) | Backside illuminated cmos image sensor and method of fabricating the same | |
CN101211952A (zh) | Cmos图像传感器及其制造方法 | |
CN101427375A (zh) | 用于改进保护暗参考列和行免受模糊现象和串扰的n阱势垒像素 | |
KR100825806B1 (ko) | Cmos 이미지 센서의 픽셀 및 그의 형성 방법 | |
CN110071128A (zh) | 一种高灵敏度大动态范围的像素结构 | |
CN112133716B (zh) | 一种图像传感器结构 | |
CN108807447B (zh) | 图像传感器及其形成方法 | |
US20230170372A1 (en) | Image sensor including reflective structure including a reflective structure | |
KR20100077589A (ko) | 이미지센서 및 그 제조방법 | |
TW202312473A (zh) | 影像感測器 | |
KR100461971B1 (ko) | 중금속 이온의 유입을 차단하여 암전류를 감소시킨 시모스이미지센서 | |
JP2007258361A (ja) | 固体撮像装置 | |
KR20080062065A (ko) | 수직형 시모스 이미지 센서의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: KONO SCIENCE CO., LTD. Free format text: FORMER OWNER: MAGNACHIP SEMICONDUCTOR LTD Effective date: 20090710 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090710 Address after: Delaware Applicant after: Magnachip Semiconductor Ltd. Address before: Cheongju Chungbuk Korea Applicant before: Magnachip Semiconductor Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |