JPS6482667A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS6482667A
JPS6482667A JP62242307A JP24230787A JPS6482667A JP S6482667 A JPS6482667 A JP S6482667A JP 62242307 A JP62242307 A JP 62242307A JP 24230787 A JP24230787 A JP 24230787A JP S6482667 A JPS6482667 A JP S6482667A
Authority
JP
Japan
Prior art keywords
photodetector
incident
light
wall
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62242307A
Other languages
Japanese (ja)
Inventor
Hirofumi Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62242307A priority Critical patent/JPS6482667A/en
Publication of JPS6482667A publication Critical patent/JPS6482667A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve optical sensitivity by providing an optical reflecting wall formed of a substance having high reflectivity so as to reflect a light incident to a section except a photodetector to introduce it to the photodetector. CONSTITUTION:An optical reflecting wall 10 for reflecting an incident light from an incident face to introduce it to a photodetector is provided between the incident face and the photodetector in a silicon substrate 1. The light incident to a section except the photodetector is reflected by the operation of the wall 10 to be introduced to the photodetector. Thus, the utility efficiency of the incident light is raised, and a solid state image sensor which can respond to a light of small incident quantity with high sensitivity can be formed. Further, even if an optical reflecting wall having various shapes for introducing a light to the photodetector is provided, the same advantages as described above can be obtained. Then, the substance for forming the wall 10 may include not only metal, such as aluminum, gold, but substances having high reflectivity, such as metal silicides.
JP62242307A 1987-09-25 1987-09-25 Solid-state image sensor Pending JPS6482667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242307A JPS6482667A (en) 1987-09-25 1987-09-25 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242307A JPS6482667A (en) 1987-09-25 1987-09-25 Solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS6482667A true JPS6482667A (en) 1989-03-28

Family

ID=17087276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242307A Pending JPS6482667A (en) 1987-09-25 1987-09-25 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS6482667A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151668A (en) * 2000-11-10 2002-05-24 Denso Corp Optical integrated circuit and manufacturing method therefor
US7582503B2 (en) 2002-03-19 2009-09-01 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US7834916B2 (en) 2002-04-05 2010-11-16 Sony Corporation Video content editing support system and method
EP2009696A3 (en) * 2007-06-29 2010-12-29 Crosstek Capital, LLC Backside illuminated image sensor

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151668A (en) * 2000-11-10 2002-05-24 Denso Corp Optical integrated circuit and manufacturing method therefor
US8035105B2 (en) 2002-03-19 2011-10-11 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US7638355B2 (en) 2002-03-19 2009-12-29 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US7755090B2 (en) 2002-03-19 2010-07-13 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US7582503B2 (en) 2002-03-19 2009-09-01 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US8362486B2 (en) 2002-03-19 2013-01-29 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US8623691B2 (en) 2002-03-19 2014-01-07 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US8969879B2 (en) 2002-03-19 2015-03-03 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US9530816B2 (en) 2002-03-19 2016-12-27 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US9859324B2 (en) 2002-03-19 2018-01-02 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US10263033B2 (en) 2002-03-19 2019-04-16 Sony Corporation Solid state image pickup device and method of producing solid state image pickup device
US7834916B2 (en) 2002-04-05 2010-11-16 Sony Corporation Video content editing support system and method
EP2009696A3 (en) * 2007-06-29 2010-12-29 Crosstek Capital, LLC Backside illuminated image sensor
US8163591B2 (en) 2007-06-29 2012-04-24 Intellectual Ventures Ii Llc Backside illuminated image sensor

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