CN102709299A - 背照式图像传感器的像素 - Google Patents
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Abstract
一种背照式图像传感器的像素，包括：衬底，具有正上表面和背侧；光电二极管，配置为响应从所述衬底的背侧接收的光以产生光电荷，其中所述光电二极管形成在所述衬底的所述正上表面附近；以及反射栅极，设置在所述光电二极管之上，并且配置为将从所述衬底的背侧接收的光反射到所述光电二极管的前侧，其中所述反射栅极还配置为接收偏压信号，以控制所述光电二极管的耗尽区的范围。
Description
本申请是申请日为2008年6月27日、申请号为200810127544.9、发明名称为“背照式图像传感器”的发明专利申请的分案申请。
技术领域
本发明涉及一种图像传感器，更具体涉及可用于有源像素传感器（APS）如互补金属氧化物半导体（CMOS）图像传感器或电荷藕合器件（CCD）图像传感器的背照式图像传感器。
背景技术
图像传感器是将光学图像转化为电信号的半导体器件。图像传感器包括用于感光的光接收部件（通常称为光电二极管）和用于将所感测的光处理为电信号的逻辑电路。
图像传感器的像素包括用于接收光以产生光电荷的光电二极管和用于将该光电荷转移至像素的感测结点（node）的电荷转移栅板。
传统的图像传感器具有正面照射结构，其中光电二极管形成在衬底表面之下，逻辑电路形成在衬底之上，使得光照射在衬底的顶表面上。然而，由于在光电二极管上方形成的多个上层导致光损失，因此所述光电二极管的光响应特性差。而且，由于光子的穿透深度较大，难以将入射光通量（flux）转化为光电荷。
为了克服这些限制，已经提出从衬底的背侧照射衬底的背照式图像传感器。
图1是美国专利公开No.2006-0068586A1中公开的传统背照式图像传感器的截面图。
参考图1，通过在具有硅/掩埋氧化物/硅结构的绝缘体上硅（SOI）上实施预定工艺，在p-型硅130上形成用作结阴板的n-阱120，并且在其上形成逻辑电路（未显示）和金属线150。附着支撑衬底140，并且对SOI晶片背面上的硅进行抛先直至掩埋氧化物层。在所得结构上形成抗反射层220和微透镜230。因此，光子从衬底的背面入射。传统的背照式图像传感器还包括用于防止串扰的p-型离子注入区域125以及第一和第二绝缘层160A和160B。
然而，金属反射器240必须在对应于光电二极管的位置处单独地提供，以降低当长波长的光穿过厚度降低的硅（衬底）时所导致的信号损失。因此，必须增加金属工艺或必须对金属布置加以限制。
另外，在传统背照式图像传感器中，根据工艺条件（掺杂浓度、深度等）确定光电二极管的内部电势，并且确定耗尽区的宽度。因此，当耗尽区不在衬底的背面附近形成时，产生串扰。即，在衬底背面周围产生的光电荷没有到达光电二极管的耗尽区而移到相邻的像素。而且，对短波长的灵敏度较差。
发明内容
本发明的实施方案涉及提供不需要单独的金属反射层的背照式图像传感器。
本发明的实施方案还涉及提供背照式图像传感器，其可控制光电二极管的耗尽区的宽度，由此改善串扰特征。
本发明的实施方案还涉及提供在将由光电二极管产生的光电荷转移至像素感测结点时具有改善的效率和时序容限（timing margin）的背照式图像传感器。
根据本发明的一个方面，提供一种背照式图像传感器，其包括：光电二极管，其形成在半导体衬底的顶表面之下，用于接收由半导体衬底背侧照射的光以产生光电荷；反射栅板，其形成在半导体衬底的正面的上表面上的光电二极管上，用于反射由衬底背侧照射的光和接收偏压以控制光电二极管的耗尽区；和转移栅板，其用于将光电荷从光电二极管转移至像素的感测结点。
根据本发明的另一个方面，提供一种背照式图像传感器的像素，其包括：衬底，具有正上表面和背侧；光电二极管，配置为响应从衬底的背侧接收的光以产生光电荷，其中光电二极管形成在衬底的正上表面附近；以及反射栅极，设置在光电二极管之上，并且配置为将从衬底的背侧接收的光反射到光电二极管的前侧，其中反射栅极还配置为接收偏压信号，以控制光电二极管的耗尽区的范围。
附图说明
图1是美国专利公开No.2006-0068586中公开的传统背照式图像传感器的截面图。
图2是根据本发明一个实施方案的背照式图像传感器的截面图。
图3是根据本发明另一个实施方案的背照式图像传感器的截面图。
具体实施方式
以下，将参考附图详细描述根据本发明实施方案的背照式图像传感器，使得本领域技术人员能够容易地实施本发明。
图2是根据本发明一个实施方案的背照式图像传感器的截面图。
参考图2，在p-型硅衬底202的顶表面之下形成具有n-型掺杂区域204和p-型掺杂区域206的光电二极管。p-型掺杂区域206改善硅表面上的暗电流并且通常称为钉扎层（pinning layer）。光电二极管可仅仅配置有n-型掺杂区域204，而省咯p-型掺杂区域206。
衬底202可使用另一种半导体材料替代硅。
在衬底202的背侧上形成微透镜244。微透镜244将从衬底202背侧照射的光集中于光电二极管。绝缘层242形成在微透镜244和衬底202之间。绝缘层242包括氧化物层、氯化物层以及它们的堆叠结构中的一种。氧化物层可包括选自以下的一层：硼磷硅酸盐玻璃（BPSG）层、磷硅酸盐玻璃（PSG）层、硼硅玻璃（BSG）、未掺杂的硅酸盐玻璃（USG）层、正硅酸四乙酯（TEOS）层、高密度等离子体（HDP）层和氧化硅（SiO2）层。氮化物层可包括其中x和y是自然数的氮化硅（SixNy）层或其中x、y和z是自然数的氧氮化硅（SixOyNz）层。绝缘层242可作为抗反射层。用于实现彩色图像的滤色器可形成在微透镜244和绝缘层242之间。
同时使用常规方法在衬底上形成包含转移栅板210的逻辑电路。而且，在光电二极管上还形成第一和第二反射栅极212和214。第一和第二反射栅极212和214具有多晶硅层和金属硅化物层的堆叠结构。金属硅化物层可包括硅化钨层。可使用金属层如钨层来替代金属硅化物层。而且，反射栅极可仅仅包括金属硅化物层或金属层，而没有多晶硅层。由此，反射栅极可由具有高反射率的导电材料形成。
反射栅极通过恰在积分时间（integration time）之前立即接收偏压来控制光电二极管耗尽区的尺寸。即，传统的图像传感器基于光电二极管的工艺条件确定耗尽区，而根据本发明实施方案的图像传感器可改善串扰特征，这是由于耗尽区可通过反射栅极扩展直至衬底的背侧附近。
由于反射栅极，耗尽区可形成直至衬底背侧的附近。由于当短波长（蓝波长）的光照射在衬底背侧上时，在衬底背侧周围产生的光电荷能够积累，所以对短波长的光敏度得到改善。
施加于反射栅极的偏压可采用利用诸如负电荷泵的电路所产生的负偏压。负电荷泵可集成在圈像传感器芯片内。
由于反射栅极包括可防止光透射和反射光的金属硅化物层，因此从衬底背侧照射的长波长光的信号损失可得到降低。因此，不必在衬底的顶表面提供单独的金属反射层，并且没有对金属布置施加限制。
由于反射栅极覆盖光电二极管，因此其保护光电二极管在栅极蚀刻期间免于等离子体损伤和免于在其它工艺期间遭受损伤。
当转移栅极210开启时，光电二极管中积累的光电荷转移至像素的感测结点，即N+浮置扩散区域224。N+缓冲区域222形成在光电二极管与转移栅极边缘之间的衬底的顶表面之下以积累光电荷。N+缓冲区域222用于改善光电荷转移效率和时序容限。省略N+缓冲区域222的光电二极管可沿转移栅极的边缘形成。这种情况下，光电二极管区域可扩展到可占据N+缓冲区域222的程度。
图3是根据本发明另一个实施方案的背照式图像传感器的截面图。
图2和3中相同的附圈标记表示相同的元件，其描述将省略。
参考图3，第一反射栅极212和第二反射栅极214与转移栅极（Tx）部分重叠，绝缘层302插入其间，省略图2的缓冲区域222。
如图3所示，省略缓冲掺杂区域，并且第一反射栅极212和第二反射栅极214与转移栅极（Tx）部分重叠，因此可确保用于光电二极管的空间，并且可防止光电荷转移效率和时序容限的降低。
如上所述，具有反射栅极的改善的背照式图像传感器可应用于4-晶体管（4T）像素和3T像素，其为本领域技术人员所公知。即，反射栅极加入4T像素或3T像素。而且，图像传感器可应用于其中两个或更多个光电二极管共有一个浮置扩散电路和像素电路的方案中。
而且，用于除去电容器（kTC）噪声中热噪声的典型的相关双采样（CDS）工艺（correlated double sampling process）可应用于上述具有反射栅极的改善的背照式图像传感器。
本发明可用于CCD图像传感器以及使用CMOS制造技术制造的CMOS图像传感器。
通过采用背照式结构，当在衬底正面设计逻辑电路和金属线的布局时，上述本发明不需要考虑用于入射光的路经。
而且，通过使用控制偏压以及光电二极管的本征电势来控制耗尽区的宽度，本发明可改善光电荷产生效率、对短波长的光敏度和串扰特征。
而且，由于反射栅极包括作为栅极材料的金属硅化物层或金属层，因此从衬底背侧照射的长波长光的信号损失可得到降低。由此，不必在衬底正面上提供单独的金属反射层。
而且，由于反射栅极覆盖光电二极管的顶部，因此可保护光电二极管在加工期间免于损伤。
虽然本发明已经对于具体的实施方案进行了描述，但是本领域技术人员显然知道可做出各种变化和改变，而没有脱离由所附权利要求所限定的本发明的精神和范围。
相关申请
本发明要求2007年6月29日提交的韩国专利申请2007-0065368的优先权，其全部内容通过引入并入本文。
Claims (11)
1.一种背照式图像传感器的像素，所述像素包括：
衬底，具有正上表面和背侧；
光电二极管，配置为响应从所述衬底的所述背侧接收的光以产生光电荷，其中所述光电二极管形成在所述衬底的所述正上表面附近；以及
反射栅极，设置在所述光电二极管之上，并且配置为将从所述衬底的所述背侧接收的光反射到所述光电二极管的前侧，其中所述反射栅极还配置为接收偏压信号，以控制所述光电二极管的耗尽区的范围。
2.根据权利要求1所述的像素，还包括转移晶体管，所述转移晶体管配置为将所述光电荷转移到浮置扩散节点。
3.根据权利要求2所述的像素，其中所述转移晶体管包括与所述反射栅极间隔开的转移栅极，并且所述转移栅极和所述反射栅极设置为与所述衬底的所述正上表面相距实质上相同的距离。
4.根据权利要求2所述的像素，其中所述转移晶体管包括缓冲区域，所述缓冲区域形成在所述衬底中并且与所述反射栅极的边缘垂直地对准。
5.根据权利要求3所述的像素，其中所述转移栅极的一部分与所述反射栅极重叠。
6.根据权利要求1所述的像素，其中所述反射栅极包括堆叠层结构。
7.根据权利要求6所述的像素，其中所述堆叠层结构包括：
多晶硅层；以及
金属层，相邻于所述多晶硅层。
8.根据权利要求7所述的像素，其中所述金属层包括硅化钨层。
9.根据权利要去7所述的像素，其中所述金属层包括钨。
10.根据权利要求1所述的像素，其中所述反射栅极包括单层结构。
11.根据权利要求10所述的像素，其中所述单层结构包括金属硅化物层或者金属层。
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Also Published As
| Publication number | Publication date |
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| CN102709299B (zh) | 2014-11-05 |
| EP2009696A2 (en) | 2008-12-31 |
| CN101335282A (zh) | 2008-12-31 |
| KR100870821B1 (ko) | 2008-11-27 |
| US20090001494A1 (en) | 2009-01-01 |
| EP2009696A3 (en) | 2010-12-29 |
| CN101335282B (zh) | 2012-07-04 |
| JP5358130B2 (ja) | 2013-12-04 |
| US8163591B2 (en) | 2012-04-24 |
| JP2009016826A (ja) | 2009-01-22 |
| US20110108709A1 (en) | 2011-05-12 |
| JP5723921B2 (ja) | 2015-05-27 |
| US7847326B2 (en) | 2010-12-07 |
| JP2013179334A (ja) | 2013-09-09 |
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