JP2008544868A - アルミニウム鏡のためのcmpの使用、及び太陽電池の製造 - Google Patents
アルミニウム鏡のためのcmpの使用、及び太陽電池の製造 Download PDFInfo
- Publication number
- JP2008544868A JP2008544868A JP2008519451A JP2008519451A JP2008544868A JP 2008544868 A JP2008544868 A JP 2008544868A JP 2008519451 A JP2008519451 A JP 2008519451A JP 2008519451 A JP2008519451 A JP 2008519451A JP 2008544868 A JP2008544868 A JP 2008544868A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- aluminum
- polishing composition
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000004519 manufacturing process Methods 0.000 title description 8
- 238000005498 polishing Methods 0.000 claims abstract description 193
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims abstract description 86
- 239000000203 mixture Substances 0.000 claims abstract description 78
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 229920000642 polymer Polymers 0.000 claims description 34
- 230000003746 surface roughness Effects 0.000 claims description 25
- 229910000838 Al alloy Inorganic materials 0.000 claims description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 150000007524 organic acids Chemical class 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
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- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 10
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 8
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- OKBMCNHOEMXPTM-UHFFFAOYSA-M potassium peroxymonosulfate Chemical compound [K+].OOS([O-])(=O)=O OKBMCNHOEMXPTM-UHFFFAOYSA-M 0.000 claims description 5
- 229910000755 6061-T6 aluminium alloy Inorganic materials 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 4
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- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
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- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 229920003002 synthetic resin Polymers 0.000 claims description 2
- 229920002725 thermoplastic elastomer Polymers 0.000 claims description 2
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- 239000002518 antifoaming agent Substances 0.000 description 7
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- 238000000149 argon plasma sintering Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
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- 150000001875 compounds Chemical class 0.000 description 5
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- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
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- 238000001027 hydrothermal synthesis Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
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- 239000002002 slurry Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000001514 detection method Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- NJVOHKFLBKQLIZ-UHFFFAOYSA-N (2-ethenylphenyl) prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1C=C NJVOHKFLBKQLIZ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
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- 239000011777 magnesium Substances 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
- B24B13/015—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor of television picture tube viewing panels, headlight reflectors or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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Abstract
【選択図】なし
Description
Claims (44)
- 下記の工程(i)〜(v)を含む、アルミニウムを有する基材の表面を研磨する方法:
(i)アルミニウムを有する基材を提供すること;
(ii)研磨パッドを提供すること;
(iii)下記の成分(a)〜(c)を含有している研磨組成物を提供すること:
(a)シリカ、セリア、及びジルコニアからなる群より選択される研磨材、
(b)アルミニウムを酸化させる試薬、及び
(c)液体キャリア、
ここで前記研磨材は、粒状であり、且つ前記液体キャリア中に懸濁している;
(iv)前記基材の表面を、前記研磨パッド及び前記研磨組成物に接触させること;並びに
(v)前記基材の表面の少なくとも一部を摩耗させて、前記基材から少なくともいくらかのアルミニウムを除去し、且つ前記基材の表面を研磨すること。 - 前記基材がアルミニウムからなる、請求項1に記載の方法。
- 前記基材がアルミニウム合金からなる、請求項1に記載の方法。
- 前記アルミニウム合金が、6000系アルミニウム合金である、請求項3に記載の方法。
- 前記アルミニウム合金が6061T6アルミニウム合金である、請求項4に記載の方法。
- 前記研磨パッドが、熱可塑性エラストマー、熱可塑性ポリウレタン、熱可塑性ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、弾性ゴム、弾性ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、それらのコポリマー、及びそれらの混合物からなる群より選択されるポリマー樹脂からなっている、請求項1に記載の方法。
- 前記研磨パッドが、熱可塑性ポリウレタンからなっている、請求項6に記載の方法。
- 前記研磨材が、フュームドシリカ、沈降シリカ、又は縮重合シリカである、請求項1に記載の方法。
- アルミニウムを酸化させる前記試薬が、過硫酸アンモニウム、過酸化水素、カリウム水素ペルオキシモノスルフェートスルフェート、及び過酢酸からなる群より選択される、請求項8に記載の方法。
- 前記研磨組成物が有機酸を更に含有している、請求項9に記載の方法。
- 前記研磨材が、前記研磨組成物の全重量に基づいて、0.1質量%〜20質量%の量で前記研磨組成物中に存在している、請求項1に記載の方法。
- 前記研磨材が、前記研磨組成物の全重量に基づいて、1質量%〜10質量%の量で前記研磨組成物中に存在している、請求項11に記載の方法。
- アルミニウムを酸化させる前記試薬が、過硫酸アンモニウム、過酸化水素、カリウム水素ペルオキシモノスルフェートスルフェート、及び過酢酸からなる群より選択される、請求項1に記載の方法。
- 前記研磨組成物が更に有機酸を含有している、請求項1に記載の方法。
- 前記有機酸がコハク酸である、請求項14に記載の方法。
- 前記基材の表面を、前記研磨パッド及び前記研磨組成物に接触させる前に、前記アルミニウムの表面を予備研磨する工程を更に含む、請求項1に記載の方法。
- 前記基材の表面の予備研磨工程を、前記表面のダイヤモンド旋削によって行う、請求項16に記載の方法。
- 前記基材の表面の予備研磨工程を、ラップ仕上げによって行う、請求項16に記載の方法。
- 前記表面を研磨して、所定の表面粗さを有する研磨表面を提供する、請求項1に記載の方法。
- 前記表面が実質的に平坦である、請求項1に記載の方法。
- 請求項1に記載の方法によって製造された鏡。
- 下記の工程(i)〜(v)を含む、アルミニウムを有する基材の表面を研磨する方法:
(i)アルミニウムを有する基材を提供すること;
(ii)下記の(A)及び(B)を有する研磨パッドを提供すること:
(A)弾性サブパッド、及び
(B)前記弾性サブパッドと実質的に同じ広がりを有するポリマー研磨フィルム、
ここで、前記ポリマー研磨フィルムは、研磨表面、及び前記弾性サブパッドに脱着可能に結合することができる背面を有する;
(iii)下記の成分(a)〜(c)を含有している研磨組成物を提供すること:
(a)シリカ、セリア、及びジルコニアからなる群より選択される研磨材、
(b)アルミニウムを酸化させる試薬、及び
(c)液体キャリア、
ここで、前記研磨材は、粒状であり、且つ前記液体キャリア中に懸濁している;
(iv)前記基材の表面を、前記研磨パッドの研磨表面及び前記研磨組成物に接触させること;並びに
(v)前記基材の表面の少なくとも一部を摩耗させて、前記基材から少なくともいくらかのアルミニウムを除去し、且つ前記基材の表面を研磨すること。 - 前記基材がアルミニウムからなる、請求項22に記載の方法。
- 前記基材がアルミニウム合金からなる、請求項22に記載の方法。
- 前記アルミニウム合金が、6000系アルミニウム合金である、請求項24に記載の方法。
- 前記アルミニウム合金が6061T6アルミニウム合金である、請求項25に記載の方法。
- 前記弾性サブパッドが、熱可塑性ポリウレタンからなっている、請求項22に記載の方法。
- 前記ポリマー研磨フィルムが、ポリカーボネート、ポリエステル、ナイロン、ポリ塩化ビニル、及びそれらの組み合わせからなる群より選択される材料を有している、請求項22に記載の方法。
- 前記研磨材が、フュームドシリカ、沈降シリカ、又は縮重合シリカである、請求項22に記載の方法。
- アルミニウムを酸化させる前記試薬が、過硫酸アンモニウム、過酸化水素、カリウム水素ペルオキシモノスルフェートスルフェート、及び過酢酸からなる群より選択される、請求項29に記載の方法。
- 前記研磨組成物が有機酸を更に含有している、請求項30に記載の方法。
- 前記研磨材が、前記研磨組成物の全重量に基づいて、0.1質量%〜20質量%の量で前記研磨組成物中に存在している、請求項22に記載の方法。
- 前記研磨材が、前記研磨組成物の全重量に基づいて、1質量%〜10質量%の量で前記研磨組成物中に存在している、請求項32に記載の方法。
- アルミニウムを酸化させる前記試薬が、過硫酸アンモニウム、過酸化水素、カリウム水素ペルオキシモノスルフェートスルフェート、及び過酢酸からなる群より選択される、請求項22に記載の方法。
- 前記研磨組成物が更に有機酸を含有している、請求項22に記載の方法。
- 前記有機酸がコハク酸である、請求項35に記載の方法。
- 前記基材の表面を、前記研磨パッド及び前記研磨組成物に接触させる前に、前記アルミニウムの表面を予備研磨する工程を更に含む、請求項22に記載の方法。
- 前記基材の表面の予備研磨工程を、前記表面のダイヤモンド旋削によって行う、請求項37に記載の方法。
- 前記基材の表面の予備研磨工程を、ラップ仕上げによって行う、請求項37に記載の方法。
- 前記表面を研磨して、所定の表面粗さを有する研磨表面を提供する、請求項22に記載の方法。
- 前記表面が実質的に平坦である、請求項22に記載の方法。
- 前記表面が凹面である、請求項22に記載の方法。
- 前記表面が凸面である、請求項22に記載の方法。
- 請求項22に記載の方法によって製造された鏡。
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US11/173,518 | 2005-06-30 | ||
US11/173,518 US8062096B2 (en) | 2005-06-30 | 2005-06-30 | Use of CMP for aluminum mirror and solar cell fabrication |
PCT/US2006/024789 WO2007120163A2 (en) | 2005-06-30 | 2006-06-22 | Use of cmp for aluminum mirror and solar cell fabrication |
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KR (2) | KR20110112463A (ja) |
CN (1) | CN101208178A (ja) |
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MY (1) | MY146358A (ja) |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011025347A (ja) * | 2009-07-24 | 2011-02-10 | Disco Abrasive Syst Ltd | 金属板の加工方法 |
WO2014054611A1 (ja) * | 2012-10-03 | 2014-04-10 | 株式会社 フジミインコーポレーテッド | 研磨方法及び合金材料の製造方法 |
WO2014069043A1 (ja) | 2012-10-31 | 2014-05-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2014106944A1 (ja) | 2013-01-04 | 2014-07-10 | 株式会社 フジミインコーポレーテッド | 合金材料の研磨方法及び合金材料の製造方法 |
JPWO2013077281A1 (ja) * | 2011-11-25 | 2015-04-27 | 株式会社フジミインコーポレーテッド | 合金材料の研磨方法及び合金材料の製造方法 |
JP2015113378A (ja) * | 2013-12-10 | 2015-06-22 | 三菱瓦斯化学株式会社 | ポリカーボネート樹脂フィルムおよびそれを用いた成形体 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006126072A1 (en) * | 2005-05-27 | 2006-11-30 | Nortel Networks Limited | Circuit-switched and multimedia subsystem voice continuity with bearer path interruption |
US20070068605A1 (en) * | 2005-09-23 | 2007-03-29 | U.I.T., Llc | Method of metal performance improvement and protection against degradation and suppression thereof by ultrasonic impact |
JP5599547B2 (ja) * | 2006-12-01 | 2014-10-01 | Mipox株式会社 | 硬質結晶基板研磨方法及び油性研磨スラリー |
JP2009035461A (ja) * | 2007-08-03 | 2009-02-19 | Asahi Glass Co Ltd | 磁気ディスク用ガラス基板の製造方法 |
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US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
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US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
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US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
CN102941528B (zh) * | 2012-11-20 | 2014-12-17 | 中国人民解放军国防科学技术大学 | 具有高精度超光滑表面的铝合金材料及抛光盘、抛光液和抛光方法 |
JP2015203080A (ja) * | 2014-04-15 | 2015-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2016163991A1 (en) * | 2015-04-07 | 2016-10-13 | Hewlett-Packard Development Company, L.P. | Methods of polishing |
MY199592A (en) * | 2017-04-14 | 2023-11-08 | Cmc Mat Llc | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface |
US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
KR102349153B1 (ko) * | 2019-12-16 | 2022-01-10 | 주식회사 포스코 | 알루미늄 합금용 연마 용액, 그 제조방법 및 이를 이용한 연마 방법 |
CN116141214A (zh) * | 2022-08-04 | 2023-05-23 | 华侨大学 | 一种可循环利用的混合磨料抛光膜的制备方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01246068A (ja) * | 1988-03-29 | 1989-10-02 | Kobe Steel Ltd | アルミニウム合金基板の鏡面仕上げ方法 |
JPH02185365A (ja) * | 1989-01-12 | 1990-07-19 | Kobe Steel Ltd | アルミニウム合金平板基盤の研磨方法 |
JPH0669187A (ja) * | 1992-06-04 | 1994-03-11 | Micron Technol Inc | 半導体処理方法 |
JP2002059357A (ja) * | 2000-08-23 | 2002-02-26 | Toray Ind Inc | 研磨パッドおよび研磨装置ならびに研磨方法 |
JP2002100592A (ja) * | 2000-09-20 | 2002-04-05 | Rodel Nitta Co | 研磨パッド |
JP2003100682A (ja) * | 2001-09-25 | 2003-04-04 | Jsr Corp | 半導体ウエハ用研磨パッド |
JP2003264161A (ja) * | 2002-03-08 | 2003-09-19 | Toshiba Corp | アルミニウム系金属用研磨液および半導体装置の製造方法 |
JP2004014744A (ja) * | 2002-06-06 | 2004-01-15 | Toray Ind Inc | 研磨パッド、研磨装置、およびそれを用いた研磨方法 |
JP2005001059A (ja) * | 2003-06-12 | 2005-01-06 | Sumitomo Bakelite Co Ltd | 研磨用積層体 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3662501A (en) * | 1971-01-28 | 1972-05-16 | Ibm | Method for polishing magnetic oxide materials |
US4769046A (en) | 1985-07-25 | 1988-09-06 | Fujimi Kanmazai Kogyo Kabushiki Kaisha Of Japan | Process for polishing surface of memory hard disc |
DE3629582A1 (de) | 1986-08-30 | 1988-03-03 | Basf Ag | Verfahren zur oberflaechenbearbeitung scheibenfoermiger vernickelter aluminiumsubstrate |
JPS63288620A (ja) | 1987-05-22 | 1988-11-25 | Kobe Steel Ltd | アルミニウムの電解複合超鏡面加工方法 |
SU1629353A1 (ru) * | 1988-08-17 | 1991-02-23 | Предприятие П/Я В-2750 | Раствор дл виброхимического шлифовани деталей из алюминиевых сплавов |
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US4959113C1 (en) | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
JPH06313164A (ja) * | 1993-04-28 | 1994-11-08 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5863838A (en) | 1996-07-22 | 1999-01-26 | Motorola, Inc. | Method for chemically-mechanically polishing a metal layer |
US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
JP3831982B2 (ja) * | 1996-07-26 | 2006-10-11 | 日産化学工業株式会社 | アルミニウムディスクの研磨用組成物 |
US5783489A (en) | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6033596A (en) | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6039891A (en) | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US6149696A (en) * | 1997-11-06 | 2000-11-21 | Komag, Inc. | Colloidal silica slurry for NiP plated disk polishing |
JP4163785B2 (ja) * | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
US5897426A (en) | 1998-04-24 | 1999-04-27 | Applied Materials, Inc. | Chemical mechanical polishing with multiple polishing pads |
US6596150B2 (en) | 1998-05-28 | 2003-07-22 | Fuji Photo Film Co., Ltd. | Production method for an aluminum support for a lithographic printing plate |
US6099389A (en) | 1998-10-05 | 2000-08-08 | The United States Of America As Represented By The United States Department Of Energy | Fabrication of an optical component |
US6350176B1 (en) * | 1999-02-01 | 2002-02-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High quality optically polished aluminum mirror and process for producing |
US6554878B1 (en) | 1999-06-14 | 2003-04-29 | International Business Machines Corporation | Slurry for multi-material chemical mechanical polishing |
JP3097913B1 (ja) | 1999-07-01 | 2000-10-10 | 日本ミクロコーティング株式会社 | ガラス基板の鏡面仕上げ方法 |
US6429133B1 (en) | 1999-08-31 | 2002-08-06 | Micron Technology, Inc. | Composition compatible with aluminum planarization and methods therefore |
US6461227B1 (en) | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
US6612911B2 (en) * | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
TW548437B (en) | 2001-03-02 | 2003-08-21 | Unaxis Balzers Ag | Optical component and its production method as well as optical switch |
US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US6913517B2 (en) * | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
JP3997152B2 (ja) * | 2002-12-26 | 2007-10-24 | 花王株式会社 | 研磨液組成物 |
US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
US6921177B2 (en) * | 2003-02-24 | 2005-07-26 | Raytheon Company | High precision mirror, and a method of making it |
US20050159085A1 (en) * | 2003-10-30 | 2005-07-21 | Scott Brandon S. | Method of chemically mechanically polishing substrates |
-
2005
- 2005-06-30 US US11/173,518 patent/US8062096B2/en not_active Expired - Fee Related
-
2006
- 2006-06-22 EP EP06851111.2A patent/EP1917122B1/en active Active
- 2006-06-22 KR KR1020117020418A patent/KR20110112463A/ko not_active Application Discontinuation
- 2006-06-22 WO PCT/US2006/024789 patent/WO2007120163A2/en active Application Filing
- 2006-06-22 CN CNA200680023157XA patent/CN101208178A/zh active Pending
- 2006-06-22 KR KR1020077030643A patent/KR101178338B1/ko active IP Right Grant
- 2006-06-22 JP JP2008519451A patent/JP5155858B2/ja active Active
- 2006-06-22 SG SG201004697-7A patent/SG163546A1/en unknown
- 2006-06-28 MY MYPI20063084A patent/MY146358A/en unknown
- 2006-06-29 TW TW095123553A patent/TWI300735B/zh active
-
2007
- 2007-11-27 IL IL187706A patent/IL187706A/en active IP Right Grant
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01246068A (ja) * | 1988-03-29 | 1989-10-02 | Kobe Steel Ltd | アルミニウム合金基板の鏡面仕上げ方法 |
JPH02185365A (ja) * | 1989-01-12 | 1990-07-19 | Kobe Steel Ltd | アルミニウム合金平板基盤の研磨方法 |
JPH0669187A (ja) * | 1992-06-04 | 1994-03-11 | Micron Technol Inc | 半導体処理方法 |
JP2002059357A (ja) * | 2000-08-23 | 2002-02-26 | Toray Ind Inc | 研磨パッドおよび研磨装置ならびに研磨方法 |
JP2002100592A (ja) * | 2000-09-20 | 2002-04-05 | Rodel Nitta Co | 研磨パッド |
JP2003100682A (ja) * | 2001-09-25 | 2003-04-04 | Jsr Corp | 半導体ウエハ用研磨パッド |
JP2003264161A (ja) * | 2002-03-08 | 2003-09-19 | Toshiba Corp | アルミニウム系金属用研磨液および半導体装置の製造方法 |
JP2004014744A (ja) * | 2002-06-06 | 2004-01-15 | Toray Ind Inc | 研磨パッド、研磨装置、およびそれを用いた研磨方法 |
JP2005001059A (ja) * | 2003-06-12 | 2005-01-06 | Sumitomo Bakelite Co Ltd | 研磨用積層体 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011025347A (ja) * | 2009-07-24 | 2011-02-10 | Disco Abrasive Syst Ltd | 金属板の加工方法 |
JPWO2013077281A1 (ja) * | 2011-11-25 | 2015-04-27 | 株式会社フジミインコーポレーテッド | 合金材料の研磨方法及び合金材料の製造方法 |
WO2014054611A1 (ja) * | 2012-10-03 | 2014-04-10 | 株式会社 フジミインコーポレーテッド | 研磨方法及び合金材料の製造方法 |
JPWO2014054611A1 (ja) * | 2012-10-03 | 2016-08-25 | 株式会社フジミインコーポレーテッド | 研磨方法及び合金材料の製造方法 |
WO2014069043A1 (ja) | 2012-10-31 | 2014-05-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2014106944A1 (ja) | 2013-01-04 | 2014-07-10 | 株式会社 フジミインコーポレーテッド | 合金材料の研磨方法及び合金材料の製造方法 |
JPWO2014106944A1 (ja) * | 2013-01-04 | 2017-01-19 | 株式会社フジミインコーポレーテッド | 合金材料の研磨方法及び合金材料の製造方法 |
TWI614093B (zh) * | 2013-01-04 | 2018-02-11 | 福吉米股份有限公司 | 研磨用組成物、合金材料、合金材料之硏磨方法及合金材料之製造方法 |
JP2015113378A (ja) * | 2013-12-10 | 2015-06-22 | 三菱瓦斯化学株式会社 | ポリカーボネート樹脂フィルムおよびそれを用いた成形体 |
Also Published As
Publication number | Publication date |
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KR20110112463A (ko) | 2011-10-12 |
JP5155858B2 (ja) | 2013-03-06 |
WO2007120163A2 (en) | 2007-10-25 |
US8062096B2 (en) | 2011-11-22 |
KR101178338B1 (ko) | 2012-08-29 |
CN101208178A (zh) | 2008-06-25 |
EP1917122B1 (en) | 2018-05-16 |
TWI300735B (en) | 2008-09-11 |
MY146358A (en) | 2012-08-15 |
WO2007120163A3 (en) | 2008-02-28 |
SG163546A1 (en) | 2010-08-30 |
EP1917122A2 (en) | 2008-05-07 |
IL187706A (en) | 2012-07-31 |
KR20080015471A (ko) | 2008-02-19 |
US20070010098A1 (en) | 2007-01-11 |
TW200714406A (en) | 2007-04-16 |
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