JP2008543087A - 有機金属化学気相成長法（ＭＯＣＶＤ）による平坦な無極性｛１−１００｝ｍ面窒化ガリウムの成長方法及び装置 - Google Patents

有機金属化学気相成長法（ＭＯＣＶＤ）による平坦な無極性｛１−１００｝ｍ面窒化ガリウムの成長方法及び装置 Download PDF

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JP2008543087A
JP2008543087A JP2008514783A JP2008514783A JP2008543087A JP 2008543087 A JP2008543087 A JP 2008543087A JP 2008514783 A JP2008514783 A JP 2008514783A JP 2008514783 A JP2008514783 A JP 2008514783A JP 2008543087 A JP2008543087 A JP 2008543087A
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substrate
plane
nonpolar
growing
nitride
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JP2008543087A5 (enExample
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ビルゲ・エム・イメル
ジェームス・エス・スペック
スティーブン・ピー・デンバース
修二 中村
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University of California San Diego UCSD
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02518—Deposited layers
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    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008514783A 2005-05-31 2006-05-31 有機金属化学気相成長法（ＭＯＣＶＤ）による平坦な無極性｛１−１００｝ｍ面窒化ガリウムの成長方法及び装置 Pending JP2008543087A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68590805P 2005-05-31 2005-05-31
PCT/US2006/020995 WO2006130622A2 (en) 2005-05-31 2006-05-31 Growth of planar non-polar{1-1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)

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JP2013246875A Pending JP2014099616A (ja) 2005-05-31 2013-11-29 有機金属化学気相成長法（ＭＯＣＶＤ）による平坦な無極性｛１−１００｝ｍ面窒化ガリウムの成長方法及び装置

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EP (1) EP1897120A4 (enExample)
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KR (2) KR101499203B1 (enExample)
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Cited By (4)

* Cited by examiner, † Cited by third party
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JP2010183050A (ja) * 2009-02-04 2010-08-19 Jiaotong Univ 非極性ｉｉｉ族窒化物層を有する多層構造及びその製造方法
WO2010100699A1 (ja) * 2009-03-06 2010-09-10 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
JP2014099616A (ja) * 2005-05-31 2014-05-29 Regents Of The Univ Of California 有機金属化学気相成長法（ＭＯＣＶＤ）による平坦な無極性｛１−１００｝ｍ面窒化ガリウムの成長方法及び装置
JP2017513236A (ja) * 2014-03-24 2017-05-25 上海卓霖半導体科技有限公司Ｓｈａｎｇｈａｉ Ｃｈｉｐｔｅｋ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． Ｌａｏ基板に基づく非極性青色ｌｅｄエピタキシャルウェハ及びその製造方法

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JP2007277074A (ja) * 2006-01-10 2007-10-25 Ngk Insulators Ltd 窒化アルミニウム単結晶の製造方法及び窒化アルミニウム単結晶
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US8652947B2 (en) * 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
KR101502195B1 (ko) * 2007-11-21 2015-03-12 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자
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US20110180781A1 (en) * 2008-06-05 2011-07-28 Soraa, Inc Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
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