CN106268521B - 一种能够提高多晶金刚石产量的合成工艺 - Google Patents

一种能够提高多晶金刚石产量的合成工艺 Download PDF

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CN106268521B
CN106268521B CN201610745001.8A CN201610745001A CN106268521B CN 106268521 B CN106268521 B CN 106268521B CN 201610745001 A CN201610745001 A CN 201610745001A CN 106268521 B CN106268521 B CN 106268521B
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pressure
segmented mode
synthesis process
boosting
yield
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CN106268521A (zh
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李建林
李闯
牛富宏
李小刚
李立
李花蕾
赵春红
司蕊蕊
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Henan FeiMeng diamond Co.,Ltd.
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Henan Famous Diamond Industrial Co ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00Production of homogeneous polycrystalline material with defined structure
    • C30B28/02Production of homogeneous polycrystalline material with defined structure directly from the solid state
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

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  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

本发明公开了一种能够提高多晶金刚石产量的合成工艺,包括以下步骤:将装有触媒和原料的合成块组装好;将合成块在金刚石合成设备上进行压制合成,送温压力设定为70MPa,将压力升至78MPa,保压4分钟;然后开始分段进行升压,分段升压压力间隔为2MPa,分段保压时间为4秒,分段升压分5个阶段;最后在5秒时间内将压力升至95MPa,加热停止,冷却8分钟后开始进行卸压。本发明的有益效果为:使用梯度式加压的合成工艺,单产比平稳式一次压力的合成工艺高出8‑10克拉以上,产品质量不受影响,产能效益增加。

Description

一种能够提高多晶金刚石产量的合成工艺
技术领域
本发明属于超硬材料合成技术领域,特别是涉及一种能够提高多晶金刚石产量的合成工艺。
背景技术
随着超硬材料的出现与发展,给人造金刚石的生产开辟了广阔的市场前景。人造金刚石越来越多地走近了人们的生活,所以人们对人造金刚石的生产与研究也越来越深入,对人造金刚石的用途及效率越来越提高。然而现有技术中多晶金刚石的生产工艺采用平稳式一次合成压力,生产效率低,产量也比较低。
发明内容
本发明的目的就在于克服上述不足,提供一种能够提高多晶金刚石产量的合成工艺。
为达到上述目的,本发明是按照以下技术方案实施的:
一种能够提高多晶金刚石产量的合成工艺,包括以下步骤:
(1)将装有触媒和原料的合成块组装好;
(2)将合成块在金刚石合成设备上进行压制合成,送温压力设定为70MPa,将压力升至78MPa,保压4分钟;
(3)然后开始分段进行升压,分段升压压力间隔为2MPa,分段保压时间为4秒,分段升压分5个阶段;
(4)最后在5秒时间内将压力升至95MPa,加热停止,冷却8分钟后开始进行卸压。
与现有技术相比,本发明的有益效果为:
根据分析一次压力对多晶金刚石合成的影响,本发明的合成工艺将一次压力由平稳式改为梯度式,合成终压不变。经多次合成对比验证,使用梯度式加压的合成工艺,单产比平稳式一次压力的工艺高出8-10克拉以上,产品质量不受影响,产能效益增加。
具体实施方式
下面结合具体实施例对本发明作进一步描述,在此发明的示意性实施例以及说明用来解释本发明,但并不作为对本发明的限定。
实施例1
一种能够提高多晶金刚石产量的合成工艺,包括以下步骤:
(1)将装有触媒和原料的合成块组装好;
(2)将合成块在金刚石合成设备上进行压制合成,送温压力设定为70MPa,将压力升至78MPa,保压4分钟;
(3)然后开始分段进行升压,分段升压压力间隔为2MPa,分段保压时间为4秒,分段升压分5个阶段;
(4)最后在5秒时间内将压力升至95MPa,加热停止,冷却8分钟后开始进行卸压。
根据分析一次压力对多晶金刚石合成的影响,本发明的合成工艺将一次压力由平稳式改为梯度式,合成终压不变。经多次合成对比验证,使用梯度式加压的合成工艺,单产比平稳式一次压力的工艺高出8-10克拉以上,产品质量不受影响,产能效益增加。
本发明的技术方案不限于上述具体实施例的限制,凡是根据本发明的技术方案做出的技术变形,均落入本发明的保护范围之内。

Claims (1)

1.一种能够提高多晶金刚石产量的合成工艺,其特征在于,包括以下步骤:
(1)将装有触媒和原料的合成块组装好;
(2)将合成块在金刚石合成设备上进行压制合成,送温压力设定为70MPa,将压力升至78MPa,保压4分钟;
(3)然后开始分段进行升压,分段升压压力间隔为2MPa,分段保压时间为4秒,分段升压分5个阶段;
(4)最后在5秒时间内将压力升至95MPa,加热停止,冷却8分钟后开始进行卸压。
CN201610745001.8A 2016-08-29 2016-08-29 一种能够提高多晶金刚石产量的合成工艺 Active CN106268521B (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000068999A1 (fr) * 1999-05-07 2000-11-16 Commissariat A L'energie Atomique Dispositif de detection de rayons x ou gamma et procede de fabrication de ce dispositif
CN103316613A (zh) * 2013-06-25 2013-09-25 河南飞孟金刚石工业有限公司 一种快速合成多晶金刚石的生产工艺
CN103357353A (zh) * 2013-07-04 2013-10-23 河南金六方超硬材料有限公司 一种自锐性树脂金刚石合成工艺
CN105233759A (zh) * 2015-09-29 2016-01-13 河南飞孟金刚石工业有限公司 一种晶种法提高多晶金刚石产能的合成工艺

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TWI377602B (en) * 2005-05-31 2012-11-21 Japan Science & Tech Agency Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000068999A1 (fr) * 1999-05-07 2000-11-16 Commissariat A L'energie Atomique Dispositif de detection de rayons x ou gamma et procede de fabrication de ce dispositif
CN103316613A (zh) * 2013-06-25 2013-09-25 河南飞孟金刚石工业有限公司 一种快速合成多晶金刚石的生产工艺
CN103357353A (zh) * 2013-07-04 2013-10-23 河南金六方超硬材料有限公司 一种自锐性树脂金刚石合成工艺
CN105233759A (zh) * 2015-09-29 2016-01-13 河南飞孟金刚石工业有限公司 一种晶种法提高多晶金刚石产能的合成工艺

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
金刚石台阶合成工艺的研究;贾传宝等;《超硬材料工程》;20160430;第15-19页 *

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