JP2008543008A - 放出陰極の製造方法 - Google Patents

放出陰極の製造方法 Download PDF

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Publication number
JP2008543008A
JP2008543008A JP2008514166A JP2008514166A JP2008543008A JP 2008543008 A JP2008543008 A JP 2008543008A JP 2008514166 A JP2008514166 A JP 2008514166A JP 2008514166 A JP2008514166 A JP 2008514166A JP 2008543008 A JP2008543008 A JP 2008543008A
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layer
cathode
conductor
lattice
etching
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JP2008543008A5 (enExample
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ロベール・メイヤー
ブリジット・モンマユール
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コミツサリア タ レネルジー アトミーク
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
    • D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
    • D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
    • D01F9/127—Carbon filaments; Apparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3048—Distributed particle emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Textile Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008514166A 2005-05-30 2006-05-29 放出陰極の製造方法 Pending JP2008543008A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0551412A FR2886284B1 (fr) 2005-05-30 2005-05-30 Procede de realisation de nanostructures
PCT/FR2006/050490 WO2007026086A2 (fr) 2005-05-30 2006-05-29 Procede de fabrication d'une cathode emissive

Publications (2)

Publication Number Publication Date
JP2008543008A true JP2008543008A (ja) 2008-11-27
JP2008543008A5 JP2008543008A5 (enExample) 2012-01-05

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JP2008514166A Pending JP2008543008A (ja) 2005-05-30 2006-05-29 放出陰極の製造方法
JP2008514165A Active JP5247438B2 (ja) 2005-05-30 2006-05-29 ナノ構造物の製造方法

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JP2008514165A Active JP5247438B2 (ja) 2005-05-30 2006-05-29 ナノ構造物の製造方法

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US (2) US7785164B2 (enExample)
EP (2) EP1885649A2 (enExample)
JP (2) JP2008543008A (enExample)
FR (1) FR2886284B1 (enExample)
WO (2) WO2007003826A2 (enExample)

Families Citing this family (16)

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FR2873852B1 (fr) 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
US8172633B2 (en) * 2006-04-05 2012-05-08 Industry Academic Cooperation Fundation of Kyunghee University Field emission display and manufacturing method of the same having selective array of electron emission source
KR100803194B1 (ko) * 2006-06-30 2008-02-14 삼성에스디아이 주식회사 탄소나노튜브 구조체 형성방법
CA2671663A1 (en) 2006-12-19 2008-06-26 Basf Coatings Ag Coating compositions with high scratch resistance and weathering stability
DE102007061855A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061856A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061854A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
JP5187689B2 (ja) * 2008-08-08 2013-04-24 学校法人 関西大学 ナノワイヤ構造体、ナノワイヤ結合体、およびその製造方法
JP5572944B2 (ja) * 2008-12-18 2014-08-20 富士通株式会社 配線構造体の製造方法及び配線構造体
DE102009024103A1 (de) 2009-06-06 2010-12-09 Basf Coatings Gmbh Beschichtungsmittel und daraus hergestellte Beschichtungen mit hoher Kratzfestigkeit und hoher Kocherstabilität
CN102064063B (zh) * 2010-12-24 2012-08-29 清华大学 场发射阴极装置及其制备方法
EP2541581A1 (en) * 2011-06-29 2013-01-02 Khalid Waqas Device comprising nanostructures and method of manufacturing thereof
WO2013037951A1 (en) * 2011-09-16 2013-03-21 Danmarks Tekniske Universitet Catalyst deposition for the preparation of carbon nanotubes
CN105984862B (zh) * 2015-02-16 2018-08-28 北京大学深圳研究生院 用于生长碳纳米管的方法
JP7556246B2 (ja) 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
CN114426255B (zh) * 2020-10-28 2025-03-04 中国科学技术大学 一种微纳米结构定点缺陷掺杂的方法及nv色心传感器

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JPH08115654A (ja) * 1994-10-14 1996-05-07 Sony Corp 粒子放出装置、電界放出型装置及びこれらの製造方法
JP2000067736A (ja) * 1998-08-14 2000-03-03 Sony Corp 電子放出素子およびその製造方法、ならびにこれを用いたディスプレイ装置
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Publication number Priority date Publication date Assignee Title
JPH0684478A (ja) * 1992-02-26 1994-03-25 Commiss Energ Atom マイクロポイント放出陰極電子源及びこの電子源を使用する電界放出励起陰極線ルミネセンス表示装置
JPH08115654A (ja) * 1994-10-14 1996-05-07 Sony Corp 粒子放出装置、電界放出型装置及びこれらの製造方法
JP2000067736A (ja) * 1998-08-14 2000-03-03 Sony Corp 電子放出素子およびその製造方法、ならびにこれを用いたディスプレイ装置
JP2000123713A (ja) * 1998-10-15 2000-04-28 Sony Corp 電子放出素子およびその製造方法、ならびにこれを用いたディスプレイ装置
JP2000323012A (ja) * 1999-05-10 2000-11-24 Futaba Corp 電界放出素子
JP2001023506A (ja) * 1999-07-07 2001-01-26 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
JP2001236879A (ja) * 2000-01-07 2001-08-31 Samsung Sdi Co Ltd カーボンナノチューブを用いた３極電界放出素子の製造方法
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JP2003249163A (ja) * 2002-02-19 2003-09-05 Commiss Energ Atom 抵抗層上に形成された放出層を有する陰極構造
JP2004288561A (ja) * 2003-03-25 2004-10-14 Mitsubishi Electric Corp 冷陰極電子源の製造方法
JP2005078850A (ja) * 2003-08-28 2005-03-24 Ulvac Japan Ltd 炭素系超微細冷陰極およびその製造方法
JP2008508665A (ja) * 2004-07-28 2008-03-21 コミツサリア タ レネルジー アトミーク 高解像度陰極構造

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Publication number Publication date
WO2007003826A2 (fr) 2007-01-11
EP1885648B1 (fr) 2018-08-29
US20080197766A1 (en) 2008-08-21
JP5247438B2 (ja) 2013-07-24
US7785164B2 (en) 2010-08-31
JP2008546146A (ja) 2008-12-18
EP1885648A2 (fr) 2008-02-13
WO2007003826A3 (fr) 2007-04-12
US7993703B2 (en) 2011-08-09
WO2007026086A3 (fr) 2007-05-31
FR2886284A1 (fr) 2006-12-01
EP1885649A2 (fr) 2008-02-13
US20080194168A1 (en) 2008-08-14
WO2007026086A2 (fr) 2007-03-08
FR2886284B1 (fr) 2007-06-29

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