FR2886284B1 - Procede de realisation de nanostructures - Google Patents

Procede de realisation de nanostructures

Info

Publication number
FR2886284B1
FR2886284B1 FR0551412A FR0551412A FR2886284B1 FR 2886284 B1 FR2886284 B1 FR 2886284B1 FR 0551412 A FR0551412 A FR 0551412A FR 0551412 A FR0551412 A FR 0551412A FR 2886284 B1 FR2886284 B1 FR 2886284B1
Authority
FR
France
Prior art keywords
producing nanostructures
nanostructures
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0551412A
Other languages
English (en)
French (fr)
Other versions
FR2886284A1 (fr
Inventor
De Monsabert Thomas Goislard
Jean Dijon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0551412A priority Critical patent/FR2886284B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to US11/915,238 priority patent/US7993703B2/en
Priority to PCT/FR2006/050490 priority patent/WO2007026086A2/fr
Priority to JP2008514166A priority patent/JP2008543008A/ja
Priority to PCT/FR2006/050489 priority patent/WO2007003826A2/fr
Priority to EP06820247A priority patent/EP1885649A2/fr
Priority to EP06794468.6A priority patent/EP1885648B1/fr
Priority to US11/915,222 priority patent/US7785164B2/en
Priority to JP2008514165A priority patent/JP5247438B2/ja
Publication of FR2886284A1 publication Critical patent/FR2886284A1/fr
Application granted granted Critical
Publication of FR2886284B1 publication Critical patent/FR2886284B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
    • D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
    • D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
    • D01F9/127—Carbon filaments; Apparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3048—Distributed particle emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Textile Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Chemical Vapour Deposition (AREA)
FR0551412A 2005-05-30 2005-05-30 Procede de realisation de nanostructures Expired - Fee Related FR2886284B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0551412A FR2886284B1 (fr) 2005-05-30 2005-05-30 Procede de realisation de nanostructures
PCT/FR2006/050490 WO2007026086A2 (fr) 2005-05-30 2006-05-29 Procede de fabrication d'une cathode emissive
JP2008514166A JP2008543008A (ja) 2005-05-30 2006-05-29 放出陰極の製造方法
PCT/FR2006/050489 WO2007003826A2 (fr) 2005-05-30 2006-05-29 Procede de realisation de nanostructures
US11/915,238 US7993703B2 (en) 2005-05-30 2006-05-29 Method for making nanostructures
EP06820247A EP1885649A2 (fr) 2005-05-30 2006-05-29 Procede de fabrication d'une cathode emissive
EP06794468.6A EP1885648B1 (fr) 2005-05-30 2006-05-29 Procede de realisation de nanostructures
US11/915,222 US7785164B2 (en) 2005-05-30 2006-05-29 Method for making an emissive cathode
JP2008514165A JP5247438B2 (ja) 2005-05-30 2006-05-29 ナノ構造物の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0551412A FR2886284B1 (fr) 2005-05-30 2005-05-30 Procede de realisation de nanostructures

Publications (2)

Publication Number Publication Date
FR2886284A1 FR2886284A1 (fr) 2006-12-01
FR2886284B1 true FR2886284B1 (fr) 2007-06-29

Family

ID=35520555

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0551412A Expired - Fee Related FR2886284B1 (fr) 2005-05-30 2005-05-30 Procede de realisation de nanostructures

Country Status (5)

Country Link
US (2) US7993703B2 (enExample)
EP (2) EP1885649A2 (enExample)
JP (2) JP2008543008A (enExample)
FR (1) FR2886284B1 (enExample)
WO (2) WO2007026086A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2873852B1 (fr) 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
JP5098048B2 (ja) * 2006-04-05 2012-12-12 インダストリー アカデミック コーオペレイション ファウンデーション オブ キョンヒー ユニヴァーシティー 電子放出源の選択的位置制御を用いた電界放出ディスプレイの製造方法および電界放出ディスプレイ
KR100803194B1 (ko) * 2006-06-30 2008-02-14 삼성에스디아이 주식회사 탄소나노튜브 구조체 형성방법
ATE515523T1 (de) 2006-12-19 2011-07-15 Basf Coatings Gmbh Beschichtungsmittel mit hoher kratzbeständigkeit und witterungsstabilität
DE102007061854A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061856A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061855A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
JP5187689B2 (ja) * 2008-08-08 2013-04-24 学校法人 関西大学 ナノワイヤ構造体、ナノワイヤ結合体、およびその製造方法
JP5572944B2 (ja) * 2008-12-18 2014-08-20 富士通株式会社 配線構造体の製造方法及び配線構造体
DE102009024103A1 (de) 2009-06-06 2010-12-09 Basf Coatings Gmbh Beschichtungsmittel und daraus hergestellte Beschichtungen mit hoher Kratzfestigkeit und hoher Kocherstabilität
CN102064063B (zh) * 2010-12-24 2012-08-29 清华大学 场发射阴极装置及其制备方法
EP2541581A1 (en) * 2011-06-29 2013-01-02 Khalid Waqas Device comprising nanostructures and method of manufacturing thereof
WO2013037951A1 (en) * 2011-09-16 2013-03-21 Danmarks Tekniske Universitet Catalyst deposition for the preparation of carbon nanotubes
CN105984862B (zh) * 2015-02-16 2018-08-28 北京大学深圳研究生院 用于生长碳纳米管的方法
JP7556246B2 (ja) 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
CN114426255B (zh) * 2020-10-28 2025-03-04 中国科学技术大学 一种微纳米结构定点缺陷掺杂的方法及nv色心传感器

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593953B1 (fr) 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
FR2687839B1 (fr) * 1992-02-26 1994-04-08 Commissariat A Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.
EP0700063A1 (en) * 1994-08-31 1996-03-06 International Business Machines Corporation Structure and method for fabricating of a field emission device
JPH08115654A (ja) * 1994-10-14 1996-05-07 Sony Corp 粒子放出装置、電界放出型装置及びこれらの製造方法
US5872422A (en) * 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices
JP2000067736A (ja) * 1998-08-14 2000-03-03 Sony Corp 電子放出素子およびその製造方法、ならびにこれを用いたディスプレイ装置
JP2000123713A (ja) * 1998-10-15 2000-04-28 Sony Corp 電子放出素子およびその製造方法、ならびにこれを用いたディスプレイ装置
JP2000323012A (ja) * 1999-05-10 2000-11-24 Futaba Corp 電界放出素子
JP2001023506A (ja) * 1999-07-07 2001-01-26 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
FR2798507B1 (fr) 1999-09-09 2006-06-02 Commissariat Energie Atomique Dispositif permettant de produire un champ electrique module au niveau d'une electrode et son application aux ecrans plats a emission de champ
FR2798508B1 (fr) 1999-09-09 2001-10-05 Commissariat Energie Atomique Dispositif permettant de produire un champ electrique module au niveau d'une electrode et son application aux ecrans plats a emission de champ
KR100480773B1 (ko) * 2000-01-07 2005-04-06 삼성에스디아이 주식회사 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법
JP2002117791A (ja) * 2000-10-06 2002-04-19 Hitachi Ltd 画像表示装置
JP3737696B2 (ja) * 2000-11-17 2006-01-18 株式会社東芝 横型の電界放出型冷陰極装置の製造方法
TW554388B (en) * 2001-03-30 2003-09-21 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6541906B2 (en) * 2001-05-23 2003-04-01 Industrial Technology Research Institute Field emission display panel equipped with a dual-layer cathode and an anode on the same substrate and method for fabrication
US6920680B2 (en) 2001-08-28 2005-07-26 Motorola, Inc. Method of making vacuum microelectronic device
FR2829873B1 (fr) 2001-09-20 2006-09-01 Thales Sa Procede de croissance localisee de nanotubes et procede de fabrication de cathode autoalignee utilisant le procede de croissance de nanotubes
JP2003115259A (ja) * 2001-10-03 2003-04-18 Sony Corp 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、冷陰極電界電子放出表示装置及びその製造方法、並びに、薄膜のエッチング方法
JP2003115257A (ja) * 2001-10-03 2003-04-18 Sony Corp 冷陰極電界電子放出素子の製造方法、及び、冷陰極電界電子放出表示装置の製造方法
KR100449071B1 (ko) * 2001-12-28 2004-09-18 한국전자통신연구원 전계 방출 소자용 캐소드
FR2836280B1 (fr) * 2002-02-19 2004-04-02 Commissariat Energie Atomique Structure de cathode a couche emissive formee sur une couche resistive
FR2836279B1 (fr) * 2002-02-19 2004-09-24 Commissariat Energie Atomique Structure de cathode pour ecran emissif
CN100407362C (zh) * 2002-04-12 2008-07-30 三星Sdi株式会社 场发射显示器
GB2389959B (en) * 2002-06-19 2006-06-14 Univ Dundee Improved field emission device
JP3890470B2 (ja) * 2002-07-16 2007-03-07 日立造船株式会社 カーボンナノチューブを用いた電子放出素子用電極材料およびその製造方法
US6803708B2 (en) * 2002-08-22 2004-10-12 Cdream Display Corporation Barrier metal layer for a carbon nanotube flat panel display
US20040037972A1 (en) * 2002-08-22 2004-02-26 Kang Simon Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
US7175494B1 (en) * 2002-08-22 2007-02-13 Cdream Corporation Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device
US6984535B2 (en) * 2002-12-20 2006-01-10 Cdream Corporation Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
US7064475B2 (en) * 2002-12-26 2006-06-20 Canon Kabushiki Kaisha Electron source structure covered with resistance film
KR100884527B1 (ko) * 2003-01-07 2009-02-18 삼성에스디아이 주식회사 전계 방출 표시장치
KR20050093796A (ko) * 2003-01-09 2005-09-23 소니 가부시끼 가이샤 통 형상 탄소 분자의 제조 방법 및 통 형상 탄소 분자,기록 장치의 제조 방법 및 기록 장치, 전계 전자방출소자의 제조 방법 및 전계 전자 방출소자와,표시장치의 제조 방법 및 표시장치
JP3900094B2 (ja) * 2003-03-14 2007-04-04 三菱電機株式会社 電子放出素子及びその製造方法ならびに表示装置
JP2004281308A (ja) * 2003-03-18 2004-10-07 Mitsubishi Electric Corp 冷陰極電子源及びその製造方法
US20070003472A1 (en) * 2003-03-24 2007-01-04 Tolt Zhidan L Electron emitting composite based on regulated nano-structures and a cold electron source using the composite
JP4083611B2 (ja) * 2003-03-25 2008-04-30 三菱電機株式会社 冷陰極電子源の製造方法
JP2004362960A (ja) * 2003-06-05 2004-12-24 Akio Hiraki 電子放出素子およびその製造方法
JP2005078850A (ja) * 2003-08-28 2005-03-24 Ulvac Japan Ltd 炭素系超微細冷陰極およびその製造方法
JP4448356B2 (ja) * 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
US20050236963A1 (en) * 2004-04-15 2005-10-27 Kang Sung G Emitter structure with a protected gate electrode for an electron-emitting device
FR2873852B1 (fr) * 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
KR100682863B1 (ko) * 2005-02-19 2007-02-15 삼성에스디아이 주식회사 탄소나노튜브 구조체 및 그 제조방법과, 탄소나노튜브 구조체를 이용한 전계방출소자 및 그 제조방법
KR100697656B1 (ko) * 2005-04-28 2007-03-22 이승호 다중 전자 공급원을 구비한 평면 발광 소자
FR2897718B1 (fr) 2006-02-22 2008-10-17 Commissariat Energie Atomique Structure de cathode a nanotubes pour ecran emissif

Also Published As

Publication number Publication date
US7785164B2 (en) 2010-08-31
JP2008543008A (ja) 2008-11-27
FR2886284A1 (fr) 2006-12-01
EP1885649A2 (fr) 2008-02-13
WO2007003826A2 (fr) 2007-01-11
US7993703B2 (en) 2011-08-09
EP1885648B1 (fr) 2018-08-29
JP2008546146A (ja) 2008-12-18
US20080197766A1 (en) 2008-08-21
US20080194168A1 (en) 2008-08-14
JP5247438B2 (ja) 2013-07-24
EP1885648A2 (fr) 2008-02-13
WO2007003826A3 (fr) 2007-04-12
WO2007026086A3 (fr) 2007-05-31
WO2007026086A2 (fr) 2007-03-08

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