JP2008521252A - ケイ素含有封入材を有する発光デバイスの製造方法 - Google Patents

ケイ素含有封入材を有する発光デバイスの製造方法 Download PDF

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Publication number
JP2008521252A
JP2008521252A JP2007543144A JP2007543144A JP2008521252A JP 2008521252 A JP2008521252 A JP 2008521252A JP 2007543144 A JP2007543144 A JP 2007543144A JP 2007543144 A JP2007543144 A JP 2007543144A JP 2008521252 A JP2008521252 A JP 2008521252A
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Japan
Prior art keywords
silicon
aliphatic unsaturation
encapsulant
light emitting
actinic radiation
Prior art date
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Pending
Application number
JP2007543144A
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English (en)
Japanese (ja)
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JP2008521252A5 (enExample
Inventor
ディー． ボードマン，ラリー
トンプソン，ディー．スコット
エー． レザーデイル，キャサリン
ジェイ． オーダーカーク，アンドリュー
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication date
Priority claimed from US10/993,460 external-priority patent/US7192795B2/en
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2008521252A publication Critical patent/JP2008521252A/ja
Publication of JP2008521252A5 publication Critical patent/JP2008521252A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Silicon Polymers (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Paints Or Removers (AREA)
  • Sealing Material Composition (AREA)
JP2007543144A 2004-11-18 2005-11-14 ケイ素含有封入材を有する発光デバイスの製造方法 Pending JP2008521252A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/993,460 US7192795B2 (en) 2004-11-18 2004-11-18 Method of making light emitting device with silicon-containing encapsulant
US11/252,336 US7314770B2 (en) 2004-11-18 2005-10-17 Method of making light emitting device with silicon-containing encapsulant
PCT/US2005/041067 WO2006055456A1 (en) 2004-11-18 2005-11-14 Method of making light emitting device with silicon-containing encapsulant

Publications (2)

Publication Number Publication Date
JP2008521252A true JP2008521252A (ja) 2008-06-19
JP2008521252A5 JP2008521252A5 (enExample) 2009-01-08

Family

ID=36127533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007543144A Pending JP2008521252A (ja) 2004-11-18 2005-11-14 ケイ素含有封入材を有する発光デバイスの製造方法

Country Status (8)

Country Link
US (1) US7314770B2 (enExample)
EP (2) EP2256833B1 (enExample)
JP (1) JP2008521252A (enExample)
KR (1) KR20070089163A (enExample)
AT (1) ATE494636T1 (enExample)
DE (1) DE602005025795D1 (enExample)
TW (1) TWI401817B (enExample)
WO (1) WO2006055456A1 (enExample)

Cited By (12)

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JP2006313902A (ja) * 2005-05-02 2006-11-16 Samsung Electro Mech Co Ltd 白色発光素子
JP2010248411A (ja) * 2009-04-17 2010-11-04 Shin-Etsu Chemical Co Ltd 表面処理蛍光体含有硬化性シリコーン樹脂組成物及び発光装置
JP2011525298A (ja) * 2008-05-07 2011-09-15 スリーエム イノベイティブ プロパティズ カンパニー ケイ素含有光重合可能組成物による光学結合
JP2012507582A (ja) * 2008-10-31 2012-03-29 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
EP2584003A1 (en) 2011-10-18 2013-04-24 Shin-Etsu Chemical Co., Ltd. Method for Curing Addition Curable Organopolysiloxane Composition
JP2013147546A (ja) * 2012-01-18 2013-08-01 Shin-Etsu Chemical Co Ltd Ｕｖ硬化型接着性シリコーン組成物、ｕｖ硬化型接着性シリコーン組成物シート、光半導体装置及びその製造方法
JP2014203869A (ja) * 2013-04-02 2014-10-27 信越化学工業株式会社 光半導体素子の封止方法
US8901588B2 (en) 2007-02-13 2014-12-02 3M Innovative Properties Company LED devices having lenses and methods of making same
KR20150143599A (ko) * 2013-04-08 2015-12-23 코닌클리케 필립스 엔.브이. 형광체 변환 층에 높은 열 전도도 입자를 갖는 led 및 그 제조 방법
JP2017076482A (ja) * 2015-10-13 2017-04-20 大日本印刷株式会社 光波長変換シート、バックライト装置、および画像表示装置
US9944031B2 (en) 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
JP2019108471A (ja) * 2017-12-19 2019-07-04 信越化学工業株式会社 紫外線硬化型樹脂組成物、接着剤および硬化物

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US7595515B2 (en) * 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
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KR100665373B1 (ko) * 2006-02-21 2007-01-09 삼성전기주식회사 발광다이오드 패키지
US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
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US20070295968A1 (en) * 2006-06-27 2007-12-27 Kheng Leng Tan Electroluminescent device with high refractive index and UV-resistant encapsulant
US7470974B2 (en) * 2006-07-14 2008-12-30 Cabot Corporation Substantially transparent material for use with light-emitting device
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JP4520437B2 (ja) * 2006-07-26 2010-08-04 信越化学工業株式会社 Ｌｅｄ用蛍光物質入り硬化性シリコーン組成物およびその組成物を使用するｌｅｄ発光装置。
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ATE494636T1 (de) 2011-01-15
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