TWI401817B - 具有含矽密封材料之發光裝置之製法 - Google Patents
具有含矽密封材料之發光裝置之製法 Download PDFInfo
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- TWI401817B TWI401817B TW094140453A TW94140453A TWI401817B TW I401817 B TWI401817 B TW I401817B TW 094140453 A TW094140453 A TW 094140453A TW 94140453 A TW94140453 A TW 94140453A TW I401817 B TWI401817 B TW I401817B
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
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Description
本發明係關於一種發光裝置的製法。特定言之,本發明係關於一種具有發光二極體(LED)及含矽密封材料之發光裝置之製法。
用於LED之典型密封材料為有機聚合材料。密封材料之壽命係阻礙高亮度LED改良效能之顯著障礙。習知之LED密封於環氧樹脂中且當使用時隨著時間而趨向於黃色,從而降低LED之亮度且改變發光裝置所發射之光線的演色指數。此對於白色LED特別重要。咸信環氧樹脂的泛黃起因於由LED之操作高溫及/或吸收由LED所發射之紫外-藍色光所引發的分解。
當使用習知環氧樹脂時第二個會出現之問題為在重複熱循環時引線接合之應力引發性破裂。高亮度LED可具有每平方公分大約100瓦特(watt)之熱負荷。因為通常用作密封材料之環氧樹脂的熱膨脹係數顯著大於半導體層的彼等係數,且環氧樹脂之模數可很大,所以嵌入之引線接合在重複熱循環及冷循環時可受壓至破損點。
因此,LED需要新的光化學穩定且熱穩定之密封材料以減少經多個溫度循環之引線接合上的應力。另外,密封材料需要具有相對快速之固化機構以加速製造時間且減少整個LED成本。
本文揭示一種發光裝置的製法。該方法包括以下步驟:提供LED且形成與該LED接觸之密封材料;其中形成該密封材料包括將該LED與由含矽樹脂及含金屬催化劑組成之光可聚合組合物接觸,其中該含矽樹脂由矽鍵結氫及脂族不飽和基團組成,及應用具有700 nm或更小波長之光化輻射以在含矽樹脂內開始氫化矽烷化。本文揭示之方法可進一步包含在低於150℃下加熱的步驟。
除了包含發光二極體及包含含矽樹脂及含金屬催化劑之光可聚合組合物的發光裝置(其中該含矽樹脂包含矽鍵結氫及脂族不飽和基團)之外,本文亦揭示根據上述方法所製備之發光裝置。
本文描述之密封材料可具有一或多個以下需要之特徵:高折射率、光化學穩定性、熱穩定性、藉由相對快速之固化機構可成形且在相對低溫下可成形。
本發明之此等及其他態樣基於以下詳細說明係為顯而易見。然而,以上概要決不應解釋為對所主張之標的物的限制,該標的物僅由附加申請專利範圍所定義,其可在專利申請期間修正。
本發明揭示一種發光裝置的製法。參照圖,LED1經安裝於安置在反射杯3中之基板6上的金屬化接觸2a上。LED1在其最底表面上具有一電接觸且在其最高表面上具有另一電接觸,後者藉由引線接合4連接至一單獨電接觸2b。電源可與電接觸耦接而給LED通電。密封材料5將LED密封。
本發明揭示一種具有密封於含矽密封材料中之LED之發光裝置的製法。該等含矽密封材料因其熱及光化學穩定性而有利。在此項技術中含矽密封材料係已知的。此等組合物通常包含有機矽氧烷,該有機矽氧烷藉由鍵結至有機矽氧烷組份之矽烷醇基團之間的酸催化縮合反應或藉由鍵結至有機矽氧烷組份之併入脂族不飽和基團與矽鍵結氫的基團之間的金屬催化氫化矽烷化反應來固化。在第一實例中,固化反應相對較慢,有時需要數個小時完成反應。在第二實例中,所需固化程度通常需要顯著超過室溫之溫度。舉例而言,美國專利申請公開案US 2004/0116640 A1聲明該等組合物"……較佳藉由在約120℃至180℃加熱約30分鐘至180分鐘來固化"。
本文揭示之方法亦利用有機矽氧烷組合物,其藉由鍵結至有機矽氧烷組份之併入脂族不飽和基團與矽鍵結氫的基團之間的金屬催化氫化矽烷化反應來固化。本文使用的含金屬催化劑可由光化輻射激活。使用藉由光化輻射激活之催化劑啟始氫化矽烷化之優點包括(1)固化密封組合物而不使LED、其所連接之基板或封裝或系統中存在之任何其他材料承受潛在有害溫度的能力;(2)調配一部分顯示長工作時間(亦稱為鍍浴期或存放期)之密封組合物的能力;(3)隨使用者之要求固化密封調配物的能力;及(4)藉由避免需要兩部分調配物(如熱可固化之氫化矽烷化組合物通常所需)來簡化調配方法的能力。
所揭示之方法包括使用具有小於或等於700奈米(nm)之波長之光化輻射。因此,所揭示方法在其避免有害溫度方面特別有利。所揭示方法包括較佳在低於120℃溫度下應用光化輻射,在低於60℃之溫度下更佳,且在25℃或更低之溫度下還要更佳。
所揭示之方法中使用的光化輻射包括小於或等於700 nm之廣泛波長範圍的光,包括可見光及紫外光,但光化輻射之波長較佳為600 nm或更小,且更佳為200 nm至600 nm,且甚至更佳為250 nm至500 nm。光化輻射具有較佳為至少200 nm之波長且更佳為至少250 nm。
充分量之光化輻射應用於含矽樹脂一定時間以形成至少部分固化的密封材料。部分固化之密封材料意謂在氫化矽烷化反應中至少消耗5莫耳%的脂族不飽和基團。較佳地,充分量之光化輻射應用於含矽樹脂一定時間以形成大體上固化的密封材料。大體上固化的密封材料意謂由於矽鍵結氫與脂族不飽和物質之光激活加成反應,在反應之前已消耗超過60莫耳%之存在於反應物質中的脂族不飽和基團。較佳地,該固化在少於30分鐘內發生,更佳地在少於10分鐘內,且甚至更佳地在少於5分鐘內或少於1分鐘內發生。在特定實施例中,該固化可在少於10秒鐘內發生。
光化輻射源之實例包括鎢鹵素燈、氙弧燈、汞弧燈、白熾燈、殺菌燈及螢光燈。在特定實施例中,光化輻射源為LED。
在一些情況下,本文揭示之方法可進一步包含在將光化輻射應用於形成密封材料後之加熱步驟。光化輻射可應用於使含矽樹脂成為凝膠及控制可存在於密封材料中之任何額外組份(如顆粒、磷光體等)之沉澱。顆粒或磷光體之受控沉澱可用於在密封材料內達成顆粒或磷光體之特定有用的空間分佈。舉例而言,該方法可控制顆粒沉澱以形成梯度折射率分佈,此可增強LED效率或發射模式。允許磷光體部分沉澱亦係有利的,其使得一部分密封材料清晰且其他部分含有磷光體。在此情況下,密封材料之清晰部分可成形來作為用於自磷光體發射光之透鏡。
除了控制沉澱,在應用光化輻射後之加熱步驟可用於加速形成密封材料,或用於減少在先前步驟中密封材料曝露於光化輻射下的時間量。可用諸如紅外燈、強制通風型烘箱或加熱板之任何加熱方式。若應用,則可在低於150℃下加熱,或更佳在低於100℃下,且還要更佳在低於60℃下加熱。
本文亦揭示了一發光裝置,其包含一發光二極體及一包含一含矽樹脂及一含金屬催化劑的光可聚合組合物,其中該含矽樹脂包含矽鍵結氫及脂族不飽和基團。在一些實施例中,含金屬催化劑可包含鉑。在其他實施例中,光可聚合組合物可為約30℃至約120℃之溫度。在其他實施例中,含金屬催化劑可包含鉑,且光可聚合組合物可為約30℃至約120℃之溫度。
在一些情況下,本文揭示之方法可進一步包含在應用光化輻射前在約30℃至約120℃之溫度下的加熱步驟。可進行加熱以降低光可聚合組合物之黏度,舉例而言,為促進任何殘存氣體之釋放。加熱可在應用光化輻射期間或之後視需要應用以加速密封材料之形成。
含矽樹脂可包括單體、低聚物、聚合物或其混和物。含矽樹脂包括矽鍵結氫及脂族不飽和基團,其允許氫化矽烷化(意即矽鍵結氫與碳碳雙鍵或碳碳三鍵加成)。矽鍵結氫及脂族不飽和基團可存在或不存在於相同的分子中。此外,脂族不飽和基團可直接鍵結或不直接鍵結至矽。
較佳之含矽樹脂係提供密封材料之彼等含矽樹脂,密封材料可為液體、凝膠、彈性體或非彈性固體形式,且係熱及光化學穩定的。對於紫外光,具有至少1.34之折射率的含矽樹脂為較佳。對於一些實施例,具有至少1.50之折射率的含矽樹脂為較佳。
選擇較佳之含矽樹脂以使得其提供光穩定及熱穩定之密封材料。本文中光穩定指長時間曝露於光化輻射下而不化學降解之材料,特別對於有色或吸光降解產物之形成。本文中熱穩定指長時間曝露於熱量下而不化學降解之材料,特別對於有色或吸光降解產物之形成。另外,較佳含矽樹脂係擁有相對快速之固化機構(舉例而言,幾秒至少於30分鐘)以加速製備時間及減少整個LED成本之彼等含矽樹脂。
舉例而言,在美國專利第6,376,569號(Oxman等人)、第4,916,169號(Boardman等人)、第6,046,250號(Boardman等人)、第5,145,886號(Oxman等人)、第6,150,546號(Butts)及在美國專利申請案第2004/0116640號(Miyoshi)中揭示合適之含矽樹脂的實例。較佳含矽樹脂包含一有機矽氧烷(意即聚矽氧類),其包括有機聚矽氧烷類。該等樹脂通常包括至少兩個組份,一具有矽鍵結氫且另一具有脂族不飽和基團。然而,矽鍵結氫與烯系不飽和基團可存在於相同分子中。
在一實施例中,含矽樹脂可包括一在一分子中具有至少兩個與矽原子鍵結之脂族不飽和基團(例如烯基或炔基)的聚矽氧組份及一在一分子中具有至少兩個與矽原子鍵結之氫原子的有機氫矽烷及/或有機氫聚矽氧烷組份。含矽樹脂較佳包括兩個組份,以含脂族不飽和基團之聚矽氧作為基礎聚合物(意即組合物中之主要有機矽氧烷組份)。較佳含矽樹脂為有機聚矽氧烷類。該等樹脂通常包含至少兩個組份,其中至少一個含有脂族不飽和基團且其中至少一個含有矽鍵結氫。該等有機聚矽氧烷類在此項技術中已知且揭示於諸如US 3,159,662(Ashby)、US 3,220,972(Lamoreauz)、US 3,410,886(Joy)、US 4,609,574(Keryk)、US 5,145,886(Oxman,等人)及US 4,916,169(Boardman等人)之專利中。若單一樹脂組份含有脂族不飽和基團及矽鍵結氫,則可固化之一組分有機聚矽氧烷樹脂係可能的。
含有脂族不飽和基團之有機聚矽氧烷類較佳為線性、環狀或支鏈有機聚矽氧烷類,其包含式R1 a
R2 b
SiO( 4 - a - b ) / 2
之單元,其中:R1
係一單價、直鏈、支鏈或環狀、未經取代或經取代之烴基,其無脂族不飽和基團且具有1至18個碳原子;R2
係一具有脂族不飽和基團之單價烴基且具有2至10個碳原子;a為0、1、2或3;b為0、1、2或3;且a+b之和為0、1、2或3;其限制條件為平均每個分子中存在至少一個R2
。
含有脂族不飽和基團之有機聚矽氧烷類較佳具有在25℃至少5 mPa.s之平均黏度。
合適R1
基之實例為:烷基,諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基、第三丁基、正戊基、異戊基、新戊基、第三戊基、環戊基、正己基、環己基、正辛基、2,2,4-三甲基戊基、正癸基、正十二烷基及正十八烷基;芳族基,諸如苯基或萘基;烷芳基,諸如4-甲苯基;芳烷基,諸如苄基、1-苯基乙基及2-苯基乙基;及經取代烷基,諸如3,3,3-三氟正丙基、1,1,2,2-四氫全氟正己基及3-氯正丙基。
合適R2
基之實例為:烯基,諸如乙烯基、5-己烯基、1-丙烯基、烯丙基、3-丁烯基、4-戊烯基、7-辛烯基及9-癸烯基;及炔基,諸如乙炔基、炔丙基與1-丙炔基。在本發明中,具有脂族碳碳多鍵之基團包括具有環脂族碳碳多鍵之基團。
含有矽鍵結氫之有機聚矽氧烷類較佳為線性、環狀或支鏈有機聚矽氧烷類,其包含式R1 a
Hc
SiO( 4 - a - c ) / 2
之單元。其中,R1
如上所定義;a為0、1、2或3;c為0、1或2;且a+c之和為0、1、2或3;其限制條件為平均每個分子中存在至少一個矽鍵結氫。
含有矽鍵結氫之有機聚矽氧烷類較佳具有在25℃時至少5 mPa.s之平均黏度。
含有脂族不飽和基團及矽鍵結氫之有機聚矽氧烷類較佳包含式R1 a
R2 b
SiO( 4 - a - b ) / 2
及R1 a
Hc
SiO( 4 - a - c ) / 2
之單元。在此等式中,R1
、R2
、a、b及c如上定義,其限制條件為平均每個分子中存在至少一個含有脂族不飽和基團之基團及至少一個矽鍵結氫。
在含矽樹脂(特定言之為有機聚矽氧烷樹脂)中矽鍵結氫與脂族不飽和基團之莫耳比可介於0.5至10.0 mol/mol之間,較佳介於0.8至4.0 mol/mol之間,且更佳介於1.0至3.0 mol/mol之間。
對於一些實施例,其中R1
基團之顯著部份係苯基或其他芳基、芳烷基或烷芳基之上述有機聚矽氧烷樹脂係較佳的,因為倂入此等基團提供比其中所有R1
基團為(例如)甲基之材料具有更高折射率的材料。
所揭示之組合物亦包括含金屬催化劑,其經由輻射激活之氫化矽烷化來使密封材料固化。此等此項技術中已知之催化劑通常包括諸如鉑、銠、銥、鈷、鎳及鈀之貴重金屬的錯合物。含貴重金屬之催化劑較佳含有鉑。所揭示之組合物亦可包括助催化劑,意即使用兩種或兩種以上含金屬催化劑。
在美國專利第6,376,569號(Oxman等人)、第4,916,169號(Boardman等人)、第6,046,250號(Boardman等人)、第5,145,886號(Oxman等人)、第6,150,546號(Butts)、第4,530,879號(Drahnak)、第4,510,094號(Drahnak)、第5,496,961號(Dauth)、第5,523,436號(Dauth)、第4,670,531號(Eckberg)以及國際公開號WO 95/025735(Mignani)中揭示多種該等催化劑。
特定較佳含鉑催化劑係由下列各物組成之群中選出:鉑(II)β-二酮酸鹽錯合物(諸如美國專利第5,145,886號(Oxman等人)中所揭示)、(η5
-環戊二烯基)三(σ-脂族)鉑錯合物(諸如美國專利第4,916,169號(Boardman等人)及美國專利第4,510,094號(Drahnak)中所揭示之彼等)及C7 - 2 0
-芳族取代(η5
-環戊二烯基)三(σ-脂族)鉑錯合物(諸如美國專利第6,150,546號(Butts)中所揭示)。
該等催化劑以有效加速氫化矽烷化反應之量使用。該等催化劑較佳以每1000000份密封材料組合物至少1份且更佳至少5份之量包括於密封材料中。該等催化劑較佳以每1000000份密封材料組合物不超過1000份金屬且更佳不超過200份金屬之量包括於密封材料中。
除了含矽樹脂及催化劑之外,密封材料亦可包括非吸收性金屬氧化物顆粒、半導體顆粒、磷光體、敏化劑、光引發劑、抗氧化劑、催化劑抑制劑及顏料。若使用,該等添加劑以產生所要效果之量使用。
包括在密封材料內之顆粒可表面處理以改良顆粒在樹脂中之可分散性。該等表面處理化學物之實例包括矽烷類、矽氧烷類、羧酸類、膦酸類、鋯酸鹽類、鈦酸鹽類及其類似物。用於應用該等表面處理化學物之技術係已知的。
非吸收性金屬氧化物及半導體顆粒可視需要包括在密封材料中以增加該密封材料之折射率。合適之非吸收性顆粒係在LED之發射頻寬上大體上透明的彼等顆粒。非吸收性金屬氧化物及半導體顆粒之實例包括(但不限於):Al2
O3
、ZrO2
、TiO2
、V2
O5
、ZnO、SnO2
、ZnS、SiO2
及其混合物,以及其他充分透明之非氧化物陶瓷材料,諸如包括如ZnS、CdS及GaN之材料的半導體材料。具有一相對較低折射率之二氧化矽(SiO2
)在一些應用中亦可用作顆粒材料,但更顯著的是,其亦可用於對由較高折射率材料製成之顆粒的薄表面處理,以使得用有機矽烷類更容易表面處理。在這點上,顆粒可包括具有一材料核心之物質,在該材料上沉積有另一類型之材料。若使用,則該等非吸收性金屬氧化物及半導體顆粒以密封材料之總重計,較佳以不超過85重量%之量包括於密封材料中。以密封材料之總重計,非吸收性金屬氧化物及半導體顆粒較佳以至少10重量%之量,且更佳以至少45重量%之量包括於密封材料中。通常粒徑可介於1奈米至1微米之間,較佳自10奈米至300奈米,更佳自10奈米至100奈米。此粒徑寸係一平均粒徑,其中粒徑為顆粒之最長尺寸,對於球形顆粒為直徑。假若球形顆粒為單峰分佈,則熟知此項技術者應瞭解金屬氧化物及/或半導體顆粒之體積百分比不可超過74體積%。
磷光體可視需要包括在密封材料中以調整LED發射出之顏色。如本文所述,磷光體由螢光材料組成。螢光材料可為無機顆粒、有機顆粒或有機分子或其組合。合適之無機顆粒包括摻雜石榴石類(諸如YAG:Ce及(Y,Gd)AG:Ce)、鋁酸鹽類(諸如Sr2
Al1 4
O2 5
:Eu及BAM:Eu)、矽酸鹽類(諸如SrBaSiO:Eu)、硫化物類(諸如ZnS:Ag、CaS:Eu及SrGa2
S4
:Eu)、氧-硫化物類、氧-氮化物類、磷酸鹽類、硼酸鹽類及鎢酸鹽類(諸如CaWO4
)。此等材料可為習知磷光體粉或奈米顆粒磷光體粉之形式。另一類合適之無機顆粒為由包括Si、Ge、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、PbS、PbSe、PbTe、InN、InP、InAs、AlN、AlP、AlAs、GaN、GaP、GaAs及其組合之半導體奈米顆粒製成的所謂量子點磷光體。通常每一量子點之表面應至少部分由有機分子覆蓋以避免聚結及增加與黏合劑之兼容性。在一些情況下,半導體量子點可由在核心-外殼構造中之若干不同材料層組成。合適之有機分子包括螢光染料,諸如列舉於美國專利第6,600,175號(Baretz等人)中之彼等。較佳螢光材料係表現出良好耐久性及穩定光學性質之彼等材料。磷光體層可由單一層中或一系列層(每一層含有一或多種類型之磷光體)中之不同類型磷光體的摻合物組成。磷光體層中之無機磷光體顆粒可在尺寸(如直徑)上變化且其可被隔離而使得平均粒徑在顆粒倂入之矽氧烷層的橫斷面上不均一。若使用,則磷光體顆粒以密封材料之總重計,較佳以不超過85重量%之量,且以至少1重量%之量包括於密封材料中。應根據含有磷光體之矽氧烷層的厚度及發射光之所要顏色來調整所用磷光體量。
敏化劑可視需要包括在密封材料中以在給定起始輻射波長下增加整個固化過程(或氫化矽烷化反應)的速度及/或將起始輻射之最佳有效波長轉移至更長值。有用的敏化劑包括例如:多環芳族化合物及含有吸光酮之芳族化合物(諸如美國專利第4,916,169號(Boardman等人)及美國專利第6,376,569號(Oxman等人)中所揭示)。有用敏化劑之實例包括(但不限於):2-氯噻噸酮、9,10-二甲基蒽、9,10-二氯代蒽及2-乙基-9,10-二甲基蒽。若使用,則該等敏化劑較佳以每1000000份組合物不超過50,000重量份,且更佳不超過5000重量份之量包括於密封材料中。若使用,則該等敏化劑較佳以每1000000份組合物至少50重量份,且更佳至少100重量份之量包括於密封材料中。
光引發劑可視需要包括於密封材料中以增加固化過程(或氫化矽烷化反應)之整個速率。有用光引發劑包括例如:α-二酮類或α-酮醛類之單縮酮類與偶姻類及其相應酯類(諸如美國專利第6,376,569號(Oxman等人)中所揭示之彼等)。若使用,則該等光引發劑較佳以每1000000份組合物不超過50000重量份,且更佳不超過5000重量份之量包括於密封材料中。若使用,則該等光引發劑較佳以每1000000份組合物至少50重量份,且更佳至少100重量份之量包括於密封材料中。
催化劑抑制劑可視需要包括在密封材料中以進一步延長組合物之可用存放期。催化劑抑制劑在此項技術中已知且包括諸如乙炔醇類(舉例而言,見美國專利第3,989,666號(Niemi)及第3,445,420號(Kookootsedes等人))、不飽和羧酸酯類(舉例而言,見美國專利第4,504,645號(Melancon)、第4,256,870號(Eckberg)、第4,347,346號(Eckberg)與第4,774,111號(Lo))及特定烯系矽氧烷類(舉例而言,見美國專利第3,933,880號(Bergstrom)、第3,989,666號(Niemi)及第3,989,667號(Lee等人))之材料。若使用,則該等催化劑抑制劑以莫耳計,較佳以不超過含金屬催化劑之量包括於密封材料中。
本文描述之含矽材料在包括一LED之發光裝置中用作密封材料。在這點上LED指發光之二極體,無論可見光、紫外光亦或紅外光。其包括以"LED"銷售之不連貫之納入環氧樹脂的半導體裝置,無論習知亦或超-輻射種類。垂直共振腔面射型二極體係LED之另一形式。"LED晶粒"係LED之最基本形式,意即藉由半導體晶圓加工程序製得之個別組份或晶片之形式。組份或晶片可包括適於應用電源給裝置通電之電接觸。組份或晶片之個別層及其他功能元件通常形成晶圓規模,所完成之晶圓最終切割為個別單件部分以生成多種LED晶粒。
本文描述之含矽材料對於包括單色及磷光體-LED(其中藍光或紫外光線經由螢光磷光體轉變成另一顏色)之廣泛多種LED有用。其亦可用於以多種構型封裝之密封LED,包括(但不限於):安裝於陶瓷或聚合物封裝上之LED表面(其可具有或不具有一反射杯)、安裝在電路板上之LED及安裝在塑料電子基板上之LED。
LED發射光可為LED源可發射之任何光,且該光可視半導體層之組合物及結構而定介於電磁波譜之紫外至紅外部分。當先化輻射源為LED本身時,LED發射較佳在350 nm至500 nm範圍內。本文描述之含矽材料在表面安裝及側面安裝之LED封裝(其中密封材料固化於反射杯中)中特別有用。其在含有頂部引線接合(與覆晶構型相反)之LED設計中亦特別有用。另外,含矽材料可用於無反射杯之表面安裝LED且可用於與多種基板連接之表面安裝LED的密封陣列。
本文描述之含矽材料係耐熱且耐光降解(耐泛黃)且因此對於白光源(意即發白光裝置)特別有用。在其構造中利用LED之白光源可具有兩個基本構型。在一基本構型中(本文中被稱為直接發射LED),白光由不同顏色的LED直接發射來產生。實例包括一紅色LED、一綠色LED與一藍色LED之組合及一藍色LED與一黃色LED之組合。在另一基本構型中(本文中被稱為LED激發之磷光體基光源(PLED)),單個LED產生在窄波長範圍內之光,其與磷光體材料碰撞且激發其產生可見光。磷光體可包含不同磷光體材料之混合物或組合,且自磷光體發射之光可包括複數個分佈於可見光波長範圍內之窄發射譜線以使得發射光對於人類肉眼呈現大體上白色。
PLED之一實例為藍色LED,其照射將藍色波長轉變為紅色及綠色波長之磷光體。一部分藍色激發光不為磷光體所吸收,且殘餘藍色激發光與自磷光體發射之紅光及綠光組合。PLED之另一實例為一紫外(UV)LED,其照射吸收紫外光且將其轉變為紅光、綠光及藍光之磷光體。R1
基很小且具有最小紫外吸收(如甲基)之有機聚矽氧烷類對於紫外發光二極體為較佳。對於熟習此項技術者來說顯而易見的為:若系統未仔細構造,則磷光體引起之光化輻射的競爭吸收將藉由光引發劑減慢或甚至阻止固化來降低吸收。
LED封裝1:在陶瓷封裝中安裝藍色LED晶粒
使用水基鹵化物助焊劑(Superior 30號,Superior Flux & Mfg.Co.)將Cree XB晶粒(Cree Inc.,部件號C460XB290-0103-A)接合入Kyocera封裝(Kyocera America,Inc.,部件號KD-LA2707-A)中。藉由使用1 mil金引線來引線接合(Kulicke and Soffa Industries,Inc.4524數位系列手動引線接合器)Cree XB晶粒以完成LED裝置。在密封之前,將每一裝置在20 mA之恆定電流下用OL 770分光輻射度計(Optronics Laboratories,Inc.)進行測試。LED之發射波長峰值為455-457 nm。
有機聚矽氧烷之製備
有機聚矽氧烷H2
C=CH-Si(CH3
)2
O-[Si(CH3
)2
O]1 0 0
-Si(CH3
)2
-CH=CH2
如下製備:在半加侖聚乙烯瓶中,將1000.0 g(3.371 mol)八甲基環四矽氧烷(Gelest,Inc.)、25.1 g(0.135 mol)1,3-二乙烯基-1,1,3,3-四甲基雙矽氧烷(Gelest,Inc.)、1.0 g濃硫酸與5.0 g活性碳組合。在室溫下攪拌混合物24小時且過濾。在200℃用薄膜蒸發器將揮發物自濾出液中分離以得到870.0 g澄清無色流體。產物的1
H及2 9
Si NMR譜與所要有機聚矽氧烷之結構一致。
實例1:可見光固化
在35 ml琥珀色瓶中製備由如先前段落中所描述而製得之10.00 g(烯烴毫當量重量=3.801 g)有機聚矽氧烷與0.44 g(Si-H毫當量重量=0.111 g)(CH3
)3
SiO-[Si(CH3
)2
O]1 5
-[SiH(CH3
)O]2 5
-Si(CH3
)3
(Dow Corning Corp.,SYL-OFF7678)組成的矽氧烷類混合物。藉由將22.1 mg Pt(acac)2
(其中acac為乙醯丙酮鹽,購自Aldrich Chemical Co.)溶解於1.00 ml CH2
Cl2
中來製備催化劑儲備溶液。將100 μl此催化劑儲備溶液之等份試樣添加至矽氧烷類混合物中。最終調配物相當於脂族不飽和基團與矽鍵結氫之比率為1.5且含有大約100 ppm的鉑。
將大約2 mg之上述最終調配物置於LED封裝1中。在20 mA下照射LED 2.5分鐘。使密封裝置放置額外5分鐘。由使用鑷子尖端探查確定,密封材料係彈性的且經固化。使用OL 770分光輻射度計來量測所得密封LED裝置的效率且該效率自9.3%(密封前)上升至11.8%(密封後)。
實例2:紫外光固化
製備密封LED裝置且以與實例1中所述相同的方式評估,但使用21.1 mg CpPt(CH3
)3
(如Boardman等人,Magn.Reson.Chem.
,30
,481(1992)中所描述來製備)來代替22.1 mgPt(acac)2
,且使用紫外燈在365 nm下進行照射。效率自8.9%(密封前)上升至11.6%(密封後)。
實例3-6說明可進行之本發明的另外實施例。
實例3:可見光固化
在35 ml琥珀色瓶中製備由10.00 g(烯烴毫當量重量=1.46 g)乙烯基矽氧烷基礎聚合物H2
C=CH-Si(CH3
)2
O-[Si(CH3
)(C6
H5
)O]n-Si(CH3
)2
-CH=CH2
(Gelest,Inc.,PMV-9925)與1.64 g(Si-H毫當量重量=0.111 g)矽氧烷交聯劑H(CH3
)2
SiO-[SiH(CH3
)O]m
-[Si(CH3
)(C6
H5
)O]n
-Si(CH3
)2
H(Gelest,Inc.,HPM-502)組成的矽氧烷類混合物。將如實例1中所描述而製備的100 μl Pt(acac)2
之CH2
Cl2
溶液的等份試樣添加至矽氧烷類混合物中。最終調配物相當於脂族不飽和基團與矽鍵結氫之比率為1.5且該調配物含有大約100 ppm的鉑。
將大約2 mg之上述最終調配物置於LED封裝1中。在20 mA下照射LED裝置2.5分鐘且接著使該裝置放置額外5分鐘。由使用鑷子尖端探查確定,密封材料係彈性的且經固化。
實例4:紫外光固化
製備密封LED裝置且以與實例3中所述相同的方式評估,但使用21.1 mg CpPt(CH3
)3
來代替22.1 mg Pt(acac)2
,且使用紫外燈在365 nm下進行照射。由使用鑷子尖端探查確定,密封材料係彈性的且經固化。
實例5:可見光固化
在35 ml琥珀色瓶中製備由10.00 g(烯烴毫當量重量=1.24 g)之乙烯基倍半矽氧烷基礎聚合物[H2
C=CH-SiO3 / 2
]m
-[Si(C6
H5
)O3 / 2
]n
(其中m與n分別表示10莫耳%及90莫耳%之倍半矽氧烷中的單體單元;Gelest,Inc.,SST-3PV1)與1.92 g(Si-H毫當量重量=0.16g)矽氧烷交聯劑H(CH3
)2
SiO-[Si(C6
H5
)[OSi(CH3
)2
H]O]n
-Si(CH3
)2
H(Gelest,Inc.,HDP-111)組成的矽氧烷類混合物。將如實例1中所描述而製備的100 μl Pt(acac)2
之CH2
Cl2
溶液的等份試樣添加至矽氧烷類混合物中。最終調配物相當於脂族不飽和基團與矽鍵結氫比率為1.5且該調配物含有大約100 ppm的鉑。
將大約2 mg之上述最終調配物置於LED封裝1中。在20 mA下照射LED 2.5分鐘且接著使該裝置放置額外5分鐘。由使用鑷子尖端探查確定,密封材料係彈性的且經固化。
實例6:紫外光固化
製備密封LED裝置且以與實例5中所述相同的方式評估,但使用21.1 mg CpPt(CH3
)3
來代替22.1 mgPt(acac)2
,且使用紫外燈在365 nm下進行照射。由使用鑷子尖端探查確定,密封材料係彈性的且經固化。
LED封裝2:在陶瓷封裝上安裝藍色LED晶粒
使用水基鹵化物助焊劑(Superior 30號,Superior Flux & Mfg.Co.)將Cree XB晶粒(Cree Inc.,部件號C460XT290-0119-A)接合入Kyocera封裝(Kyocera America,Inc.,部件號KD-LA2707-A)中。藉由使用1 mil金引線來引線接合(Kulicke and Soffa Industries,Inc.4524數位系列手動引線接合器)Cree XT晶粒以完成LED裝置。在密封之前,將每一裝置在20 mA之恆定電流下用OL 770分光輻射度計(Optronics Laboratories,Inc.)進行測試。LED之發射波長峰值為458-460 nm。
實例7
在35 ml琥珀色瓶中製備由10.00 g之乙烯基矽氧烷基礎聚合物H2
C=CH-Si(CH3
)2
O-[Si(CH3
)2
O]8 0
-[Si(C6
H5
)2
O]2 6
-Si(CH3
)2
-CH=CH2
(購自Gelest,PDV-2331)與1.04 g H(CH3
)2
SiO-[Si(CH3
)HO]1 5
-[Si(CH3
)(C6
H5
)O]1 5
-Si(CH3
)2
H(購自Gelest,HPM-502)組成的矽氧烷類混合物。將33 mg Pt(acac)2
溶於1 ml甲苯中之溶液的100 μl等份試樣添加至矽氧烷類混合物中。該混合物在真空下脫氣且將最終組合物標為密封材料A。
使用注射器針頭尖端將一小滴密封材料A置於LED封裝2中以覆蓋LED及引線接合且將裝置填補至與反射杯頂部水平。將矽氧烷密封材料在配備有兩個16吋Philips F15T8/BL 15W燈泡之XX-15型UVP Blak-Ray燈下輻照3分鐘,該燈係在距經密封之LED 20 mm處於365 nm發射。密封材料藉由鑷子尖端探查而判斷為完全固化、無黏著且有彈性。
實例8
如實例7中所述,藍色LED裝置由密封材料A填補。矽氧烷密封材料如實例1所述輻照但僅歷時15秒。接著將含有經輻照之密封材料的經填補LED裝置置於設置為100℃之加熱板上。1分鐘後該密封材料藉由鑷子尖端探查而判斷為完全固化、無黏著且有彈性。在100℃加熱之前,該密封材料係不完全固化之黏著凝膠。
實例9
如實例7中所述,藍色LED裝置由密封材料A填補。矽氧烷密封材料如實例1所述輻照但僅歷時15秒。接著使含有經輻照之密封材料的經填補LED裝置在室溫下放置。10分鐘後該密封材料藉由鑷子尖端探查而判斷為完全固化、無黏著且有彈性。在置於室溫下之前,該密封材料係不完全固化之黏著凝膠。
如實例7中所述,藍色LED裝置由密封材料A填補。經矽氧烷填補之LED裝置置於設置為100℃之加熱板上。20分鐘後該密封材料藉由鑷子尖端探查而判斷為仍為液體且無固化跡象。
本文所引用的專利、專利文獻及公開案之全部揭示內容以引用的方式全部併入本文中,就如同個別地將各個專利、專利文獻及公開案以引用的方式全部併入本文中一般。對於熟習此項技術者,在不背離本發明之範疇及精神的情況下,各種修改及變更將變得顯而易見。應瞭解本發明並不意欲過度受限於本文所陳述之說明性實施例及實例,且應瞭解該等實例及實施例僅作為實例而存在,本發明之範疇僅意欲藉由本文中以下陳述之申請專利範圍來限制。
1...LED
2a...金屬化接觸
2b...電接觸
3...反射杯
4...引線接合
5...密封材料
6...基板
該圖係一發光裝置示意圖,該裝置能根據所揭示之方法製備。
1...LED
2a...金屬化接觸
2b...電接觸
3...反射杯
4...引線接合
5...密封材料
6...基板
Claims (51)
- 一種製造發光裝置之方法,該方法包含以下步驟:提供發光二極體;且形成與該發光二極體接觸之密封材料,其中形成該密封材料包含:將包含含矽樹脂及含金屬催化劑之光可聚合組合物與該發光二極體接觸,其中該含矽樹脂包含矽鍵結氫及脂族不飽和基團;及應用具有700 nm或更小波長之光化輻射以在該含矽樹脂內啟始氫化矽烷化。
- 如請求項1之方法,其中該矽鍵結氫及該脂族不飽和基團係存在於同一分子中。
- 如請求項1之方法,其中該矽鍵結氫及該脂族不飽和基團係存在於不同分子中。
- 如請求項1之方法,其中氫化矽烷化反應中消耗至少5莫耳%之該脂族不飽和基團。
- 如請求項1之方法,其中氫化矽烷化反應中消耗至少60莫耳%之該脂族不飽和基團。
- 如請求項5之方法,其中該氫化矽烷化反應在少於30分鐘內發生。
- 如請求項6之方法,其中該氫化矽烷化反應在少於10分鐘內發生。
- 如請求項7之方法,其中該氫化矽烷化反應在少於5分鐘內發生。
- 如請求項8之方法,其中該氫化矽烷化反應在少於1分鐘內發生。
- 如請求項9之方法,其中該氫化矽烷化反應在少於10秒鐘內發生。
- 如請求項1之方法,其中應用光化輻射包含激活該發光二極體。
- 如請求項1之方法,其中應用光化輻射包含在低於120℃之溫度下應用光化輻射。
- 如請求項12之方法,其中應用光化輻射包含在低於60℃之溫度下應用光化輻射。
- 如請求項13之方法,其中應用光化輻射包含在25℃或更低之溫度下應用光化輻射。
- 如請求項1之方法,其中該含金屬催化劑包含鉑。
- 如請求項15之方法,其中該含金屬催化劑係由下列各物組成之群中選出:Pt(II)β-二酮酸鹽錯合物、(η5 -環戊二烯基)三(σ-脂族)鉑錯合物及C7-20 -芳族取代(η5 -環戊二烯基)三(σ-脂族)鉑錯合物。
- 如請求項1之方法,其中該光化輻射具有600 nm或更小之波長。
- 如請求項17之方法,其中該光化輻射具有200 nm至600 nm之波長。
- 如請求項18之方法,其中該光化輻射具有250 nm至500 nm之波長。
- 如請求項1之方法,其中該密封材料係液體、凝膠、彈性 體或非彈性固體。
- 如請求項1之方法,其中該密封材料具有至少為1.34之折射率。
- 如請求項1之方法,其中該密封材料具有至少為1.50之折射率。
- 如請求項1之方法,其中該光可聚合組合物包含有機矽氧烷。
- 如請求項2之方法,其中該光可聚合組合物包含有機矽氧烷。
- 如請求項1之方法,其中該光可聚合組合物包含具有矽鍵結氫之第一有機矽氧烷及具有脂族不飽和基團之第二有機矽氧烷。
- 如請求項25之方法,其中該光可聚合材料包含包含下式單元之有機矽氧烷:R1 a R2 b SiO(4-a-b)/2 其中:R1 係單價、直鏈、支鏈或環狀、未經取代或經取代之烴基,其無脂族不飽和基團且具有1至18個碳原子;R2 係具有脂族不飽和基團及2至10個碳原子之單價烴基;a為0、1、2或3;b為0、1、2或3;且a+b之和為0、1、2或3;其限制條件為平均每個分子中存在至少一個R2 。
- 如請求項26之方法,其中至少90莫耳%之該等R1 基係甲基。
- 如請求項26之方法,其中至少20莫耳%之該等R1 基係芳基、芳烷基、烷芳基或其組合。
- 如請求項28之方法,其中該等R1 基係苯基。
- 如請求項26之方法,其中該等R2 基係乙烯基或5-己烯基。
- 如請求項25之方法,其中該光可聚合材料包含包含下式單元之有機矽氧烷:R1 a Hc SiO(4-a-c)/2 其中:R1 係單價、直鏈、支鏈或環狀、未經取代或經取代之烴基,其無脂族不飽和基團且具有1至18個碳原子;a為0、1、2或3;c為0、1或2;且a+c之和為0、1、2或3;其限制條件為平均每個分子中存在至少一個矽鍵結氫。
- 如請求項31之方法,其中至少90莫耳%之該等R1 基係甲基。
- 如請求項31之方法,其中至少20莫耳%之該等R1 基係芳基、芳烷基、烷芳基或其組合。
- 如請求項33之方法,其中該等R1 基係苯基。
- 如請求項1之方法,其中該光可聚合材料包含包含下式單元之有機矽氧烷: R1 a R2 b SiO(4-a-b)/2 及R1 a Hc SiO(4-a-c)/2 其中:R1 係單價、直鏈、支鏈或環狀、未經取代或經取代之烴基,其無脂族不飽合基團且含有1至18個碳原子;R2 係具有脂族不飽和基團及2至10個碳原子之單價烴基;a為0、1、2或3;b為0、1、2或3c為0、1或2;a+b之和為0、1、2或3;且a+c之和為0、1、2或3;其限制條件為平均每個分子中存在至少一個矽鍵結氫及至少一個R2 基。
- 如請求項35之方法,其中至少90莫耳%之該等R1 基係甲基。
- 如請求項35之方法,其中至少20莫耳%之該等R1 基係芳基、芳烷基、烷芳基或其組合。
- 如請求項37之方法,其中該等R1 基係苯基。
- 如請求項35之方法,其中該等R2 基係乙烯基或5-己烯基。
- 如請求項1之方法,其中該矽鍵結氫與該脂族不飽和基團以0.5至10.0之莫耳比存在。
- 如請求項40之方法,其中該矽鍵結氫與該脂族不飽和基團以0.8至4.0之莫耳比存在。
- 如請求項41之方法,其中該矽鍵結氫與該脂族不飽和基 團以1.0至3.0之莫耳比存在。
- 如請求項1之方法,其中該光可聚合材料包含一或多個由下列各物組成之群中選出的添加劑:非吸收性金屬氧化物顆粒、半導體顆粒、磷光體、敏化劑、抗氧化劑、顏料、光引發劑、催化劑抑制劑及其組合。
- 如請求項1之方法,其中所製備係一種發光裝置。
- 如請求項12之方法,其中形成該密封材料進一步包含在低於150℃下加熱之步驟。
- 如請求項45之方法,其中在低於100℃下加熱。
- 如請求項46之方法,其中在低於60℃下加熱。
- 一種發光裝置,其包含發光二極體及包含含矽樹脂及含可由光化輻射激活之金屬催化劑之光可聚合組合物,其中該含矽樹脂包含矽鍵結氫及脂族不飽和基團。
- 如請求項48之發光裝置,其中該含金屬催化劑包含鉑。
- 如請求項48之發光裝置,其中該光可聚合組合物係在約30℃至約120℃之溫度下。
- 如請求項50之發光裝置,其中該含金屬催化劑包含鉑。
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Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7192795B2 (en) * | 2004-11-18 | 2007-03-20 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
WO2006071806A2 (en) | 2004-12-27 | 2006-07-06 | Quantum Paper, Inc. | Addressable and printable emissive display |
KR100682874B1 (ko) * | 2005-05-02 | 2007-02-15 | 삼성전기주식회사 | 백색 led |
US7595515B2 (en) * | 2005-10-24 | 2009-09-29 | 3M Innovative Properties Company | Method of making light emitting device having a molded encapsulant |
US20070092636A1 (en) * | 2005-10-24 | 2007-04-26 | 3M Innovative Properties Company | Method of making light emitting device having a molded encapsulant |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
KR100665373B1 (ko) * | 2006-02-21 | 2007-01-09 | 삼성전기주식회사 | 발광다이오드 패키지 |
US7655486B2 (en) | 2006-05-17 | 2010-02-02 | 3M Innovative Properties Company | Method of making light emitting device with multilayer silicon-containing encapsulant |
US20070269586A1 (en) * | 2006-05-17 | 2007-11-22 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing composition |
US20070295968A1 (en) * | 2006-06-27 | 2007-12-27 | Kheng Leng Tan | Electroluminescent device with high refractive index and UV-resistant encapsulant |
KR100901947B1 (ko) * | 2006-07-14 | 2009-06-10 | 삼성전자주식회사 | 반도체 나노결정을 이용하는 백색 발광 다이오드 및 그의제조방법 |
US7470974B2 (en) * | 2006-07-14 | 2008-12-30 | Cabot Corporation | Substantially transparent material for use with light-emitting device |
JP4520437B2 (ja) * | 2006-07-26 | 2010-08-04 | 信越化学工業株式会社 | Led用蛍光物質入り硬化性シリコーン組成物およびその組成物を使用するled発光装置。 |
US8092735B2 (en) | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
US7723744B2 (en) | 2006-12-08 | 2010-05-25 | Evident Technologies, Inc. | Light-emitting device having semiconductor nanocrystal complexes |
KR20090115803A (ko) * | 2007-02-13 | 2009-11-06 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 렌즈를 갖는 led 소자 및 그 제조 방법 |
US9944031B2 (en) * | 2007-02-13 | 2018-04-17 | 3M Innovative Properties Company | Molded optical articles and methods of making same |
US7858198B2 (en) * | 2007-04-10 | 2010-12-28 | Shin-Etsu Chemical Co., Ltd. | Phosphor-containing adhesive silicone composition, composition sheet formed of the composition, and method of producing light emitting device using the sheet |
JP5053714B2 (ja) * | 2007-05-30 | 2012-10-17 | 株式会社カネカ | 付加型硬化性シリコーン組成物 |
US8384630B2 (en) | 2007-05-31 | 2013-02-26 | Nthdegree Technologies Worldwide Inc | Light emitting, photovoltaic or other electronic apparatus and system |
US7972031B2 (en) * | 2007-05-31 | 2011-07-05 | Nthdegree Technologies Worldwide Inc | Addressable or static light emitting or electronic apparatus |
US8846457B2 (en) | 2007-05-31 | 2014-09-30 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8133768B2 (en) | 2007-05-31 | 2012-03-13 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US9425357B2 (en) | 2007-05-31 | 2016-08-23 | Nthdegree Technologies Worldwide Inc. | Diode for a printable composition |
US9419179B2 (en) | 2007-05-31 | 2016-08-16 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8852467B2 (en) | 2007-05-31 | 2014-10-07 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
US8877101B2 (en) | 2007-05-31 | 2014-11-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, power generating or other electronic apparatus |
US8889216B2 (en) | 2007-05-31 | 2014-11-18 | Nthdegree Technologies Worldwide Inc | Method of manufacturing addressable and static electronic displays |
US8674593B2 (en) | 2007-05-31 | 2014-03-18 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US9534772B2 (en) | 2007-05-31 | 2017-01-03 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting diodes |
US8809126B2 (en) | 2007-05-31 | 2014-08-19 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8415879B2 (en) | 2007-05-31 | 2013-04-09 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US9343593B2 (en) | 2007-05-31 | 2016-05-17 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US9018833B2 (en) | 2007-05-31 | 2015-04-28 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting or absorbing diodes |
US20090062417A1 (en) * | 2007-08-31 | 2009-03-05 | Momentive Performance Materials Gmbh | Process For The Continuous Manufacturing Of Shaped Articles And Use Of Silicone Rubber Compositions In That Process |
US20090065792A1 (en) | 2007-09-07 | 2009-03-12 | 3M Innovative Properties Company | Method of making an led device having a dome lens |
US7960192B2 (en) * | 2007-09-14 | 2011-06-14 | 3M Innovative Properties Company | Light emitting device having silicon-containing composition and method of making same |
US7732553B2 (en) | 2008-02-28 | 2010-06-08 | The Regents Of The University Of California | Method of producing encapsulation resins |
US7943719B2 (en) | 2008-02-28 | 2011-05-17 | The Regents of the University of California; | Encapsulation resins |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
WO2009151515A1 (en) | 2008-05-06 | 2009-12-17 | Qd Vision, Inc. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
CN102077131B (zh) * | 2008-05-07 | 2013-06-19 | 3M创新有限公司 | 光学组件,制作该光学组件的方法和包括该光学组件的光学装置 |
US7992332B2 (en) | 2008-05-13 | 2011-08-09 | Nthdegree Technologies Worldwide Inc. | Apparatuses for providing power for illumination of a display object |
US8127477B2 (en) | 2008-05-13 | 2012-03-06 | Nthdegree Technologies Worldwide Inc | Illuminating display systems |
US20100244286A1 (en) * | 2008-10-06 | 2010-09-30 | Lagsa Earl Vincent B | Nanocomposites for optoelectronic devices |
DE102008043316A1 (de) * | 2008-10-30 | 2010-05-06 | Wacker Chemie Ag | Verfahren zur Herstellung von Siliconformkörpern aus durch Licht vernetzbaren Siliconmischungen |
EP2352794A1 (en) * | 2008-10-31 | 2011-08-10 | Dow Corning Toray Co., Ltd. | Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device |
KR101525523B1 (ko) * | 2008-12-22 | 2015-06-03 | 삼성전자 주식회사 | 반도체 나노 결정 복합체 |
JP5177436B2 (ja) * | 2009-04-17 | 2013-04-03 | 信越化学工業株式会社 | 表面処理蛍光体含有硬化性シリコーン樹脂組成物及び発光装置 |
EP2424814A4 (en) | 2009-04-28 | 2016-06-01 | Qd Vision Inc | OPTICAL MATERIALS, OPTICAL COMPONENTS AND METHOD |
DE102009027486A1 (de) * | 2009-07-06 | 2011-01-13 | Wacker Chemie Ag | Verfahren zur Herstellung von Siliconbeschichtungen und Siliconformkörpern aus durch Licht vernetzbaren Siliconmischungen |
CN105713599B (zh) | 2009-08-14 | 2018-09-11 | 三星电子株式会社 | 发光器件、用于发光器件的光学元件、以及方法 |
US8035236B2 (en) | 2009-10-16 | 2011-10-11 | The Regents Of The University Of California | Semiconductor device comprising high performance encapsulation resins |
EP2333854B1 (en) | 2009-12-09 | 2018-02-07 | Samsung Electronics Co., Ltd. | Light emitting diode |
US9515229B2 (en) | 2010-09-21 | 2016-12-06 | Cree, Inc. | Semiconductor light emitting devices with optical coatings and methods of making same |
KR20130141559A (ko) | 2010-11-03 | 2013-12-26 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 열 관리를 위한 가요성 led 디바이스 및 제조 방법 |
KR20140047571A (ko) * | 2011-07-14 | 2014-04-22 | 세키스이가가쿠 고교가부시키가이샤 | 광반도체 장치용 밀봉제 및 광반도체 장치 |
JP2013087199A (ja) | 2011-10-18 | 2013-05-13 | Shin-Etsu Chemical Co Ltd | 付加硬化型オルガノポリシロキサン組成物の硬化方法 |
TWI471381B (zh) * | 2011-11-25 | 2015-02-01 | Lg Chemical Ltd | 可固化組成物 |
KR101869246B1 (ko) * | 2012-01-13 | 2018-07-20 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP5583703B2 (ja) | 2012-01-18 | 2014-09-03 | 信越化学工業株式会社 | 光半導体装置の製造方法 |
KR101336831B1 (ko) * | 2012-02-01 | 2013-12-04 | 주식회사 엘엠에스 | 양자점를 포함하는 조성물 및 이를 이용한 장치 |
DE102012202521A1 (de) | 2012-02-20 | 2013-08-22 | Evonik Goldschmidt Gmbh | Verzweigte Polysiloxane und deren Verwendung |
KR20130109759A (ko) * | 2012-03-28 | 2013-10-08 | 삼성전자주식회사 | 발광소자 패키지 |
TWI616489B (zh) * | 2013-02-18 | 2018-03-01 | 可應用於發光二極體元件之聚矽氧烷組合物、基座配方及其發光二極體元件 | |
US9680072B2 (en) | 2013-03-05 | 2017-06-13 | Pacific Light Technologies Corp. | Quantum dot (QD) delivery method |
US10202543B2 (en) | 2013-03-05 | 2019-02-12 | Osram Opto Semiconductors Gmbh | Quantum dot (QD) delivery method |
JP6372973B2 (ja) * | 2013-04-02 | 2018-08-15 | 信越化学工業株式会社 | 光半導体素子の封止方法 |
EP2984686B1 (en) * | 2013-04-08 | 2020-07-08 | Lumileds Holding B.V. | Method of fabricating led with high thermal conductivity particles in phosphor conversion layer |
US9976710B2 (en) | 2013-10-30 | 2018-05-22 | Lilibrand Llc | Flexible strip lighting apparatus and methods |
US10113036B2 (en) * | 2014-06-23 | 2018-10-30 | Shin-Etsu Chemical Co., Ltd. | Crosslinked organopolysiloxane and method for producing same, mist suppressant, and solvent-free silicone composition for release paper |
WO2015200587A1 (en) * | 2014-06-25 | 2015-12-30 | Dow Corning Corporation | Layered polymer structures and methods |
JP6332636B2 (ja) * | 2015-03-26 | 2018-05-30 | 豊田合成株式会社 | 発光装置及び該発光装置用の封止層 |
JP6665477B2 (ja) * | 2015-10-13 | 2020-03-13 | 大日本印刷株式会社 | 光波長変換シート、バックライト装置、および画像表示装置 |
EP3427307A4 (en) | 2016-03-08 | 2020-01-01 | Lilibrand LLC | LIGHTING SYSTEM COMPRISING A LENS ASSEMBLY |
US20180182939A1 (en) * | 2016-12-22 | 2018-06-28 | Rayvio Corporation | Package for an ultraviolet emitting device |
CN110998880A (zh) | 2017-01-27 | 2020-04-10 | 莉莉布兰德有限责任公司 | 具有高显色指数和均匀平面照明的照明系统 |
US20180328552A1 (en) | 2017-03-09 | 2018-11-15 | Lilibrand Llc | Fixtures and lighting accessories for lighting devices |
JP6911741B2 (ja) * | 2017-12-19 | 2021-07-28 | 信越化学工業株式会社 | 紫外線硬化型樹脂組成物、接着剤および硬化物 |
US11041609B2 (en) | 2018-05-01 | 2021-06-22 | Ecosense Lighting Inc. | Lighting systems and devices with central silicone module |
WO2020131933A1 (en) | 2018-12-17 | 2020-06-25 | Lilibrand Llc | Strip lighting systems which comply with ac driving power |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313365A (en) * | 1992-06-30 | 1994-05-17 | Motorola, Inc. | Encapsulated electronic package |
US6020227A (en) * | 1995-09-12 | 2000-02-01 | National Semiconductor Corporation | Fabrication of multiple field-effect transistor structure having local threshold-adjust doping |
US20010019869A1 (en) * | 1998-11-18 | 2001-09-06 | Hsu Sheng Teng | Asymmetrical MOS channel structure with drain extension |
US6806509B2 (en) * | 2003-03-12 | 2004-10-19 | Shin-Etsu Chemical Co., Ltd. | Light-emitting semiconductor potting composition and light-emitting semiconductor device |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE553159A (zh) * | 1955-12-05 | |||
US3220972A (en) * | 1962-07-02 | 1965-11-30 | Gen Electric | Organosilicon process using a chloroplatinic acid reaction product as the catalyst |
US3159662A (en) * | 1962-07-02 | 1964-12-01 | Gen Electric | Addition reaction |
NL131800C (zh) * | 1965-05-17 | |||
US3410886A (en) * | 1965-10-23 | 1968-11-12 | Union Carbide Corp | Si-h to c=c or c=c addition in the presence of a nitrile-platinum (ii) halide complex |
NL129346C (zh) * | 1966-06-23 | |||
US3814730A (en) * | 1970-08-06 | 1974-06-04 | Gen Electric | Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes |
US3715334A (en) * | 1970-11-27 | 1973-02-06 | Gen Electric | Platinum-vinylsiloxanes |
US3933880A (en) * | 1974-12-02 | 1976-01-20 | Dow Corning Corporation | Method of preparing a platinum catalyst inhibitor |
US3989666A (en) * | 1974-12-02 | 1976-11-02 | Dow Corning Corporation | Crosslinker-platinum catalyst-inhibitor and method of preparation thereof |
US3989667A (en) * | 1974-12-02 | 1976-11-02 | Dow Corning Corporation | Olefinic siloxanes as platinum inhibitors |
US4256870A (en) * | 1979-05-17 | 1981-03-17 | General Electric Company | Solventless release compositions, methods and articles of manufacture |
US4347346A (en) * | 1981-04-02 | 1982-08-31 | General Electric Company | Silicone release coatings and inhibitors |
US4421903A (en) * | 1982-02-26 | 1983-12-20 | General Electric Company | Platinum complex catalysts |
US4530879A (en) * | 1983-03-04 | 1985-07-23 | Minnesota Mining And Manufacturing Company | Radiation activated addition reaction |
USRE33289E (en) * | 1983-07-07 | 1990-08-07 | General Electric Company | Transparent membrane structures |
US4504645A (en) * | 1983-09-23 | 1985-03-12 | Minnesota Mining And Manufacturing Company | Latently-curable organosilicone release coating composition |
US4510094A (en) * | 1983-12-06 | 1985-04-09 | Minnesota Mining And Manufacturing Company | Platinum complex |
US4600484A (en) * | 1983-12-06 | 1986-07-15 | Minnesota Mining And Manufacturing Company | Hydrosilation process using a (η5 -cyclopentadienyl)tri(σ-aliphatic) platinum complex as the catalyst |
US4613215A (en) * | 1984-10-09 | 1986-09-23 | Orion Industries, Inc. | Mounting bracket for rear view mirror with spring detent |
US4609574A (en) * | 1985-10-03 | 1986-09-02 | Dow Corning Corporation | Silicone release coatings containing higher alkenyl functional siloxanes |
US4705765A (en) * | 1985-12-19 | 1987-11-10 | General Electric Company | Hydrosilylation catalyst, method for making and use |
US4670531A (en) * | 1986-01-21 | 1987-06-02 | General Electric Company | Inhibited precious metal catalyzed organopolysiloxane compositions |
FR2597110A1 (fr) * | 1986-04-14 | 1987-10-16 | Rhone Poulenc Multi Tech | Composition organopolysiloxane, potentiellement reticulable et utilisable notamment en microlithographie, et son procede d'application |
US4774111A (en) * | 1987-06-29 | 1988-09-27 | Dow Corning Corporation | Heat-curable silicone compositions comprising fumarate cure-control additive and use thereof |
US5145886A (en) * | 1988-05-19 | 1992-09-08 | Minnesota Mining And Manufacturing Company | Radiation activated hydrosilation reaction |
US4916169A (en) * | 1988-09-09 | 1990-04-10 | Minnesota Mining And Manufacturing Company | Visible radiation activated hydrosilation reaction |
CA2015481C (en) | 1989-05-18 | 1996-05-14 | Robert William Filas | Devices featuring silicone elastomers |
US6376569B1 (en) * | 1990-12-13 | 2002-04-23 | 3M Innovative Properties Company | Hydrosilation reaction utilizing a (cyclopentadiene)(sigma-aliphatic) platinum complex and a free radical photoinitiator |
US6046250A (en) * | 1990-12-13 | 2000-04-04 | 3M Innovative Properties Company | Hydrosilation reaction utilizing a free radical photoinitiator |
US5122943A (en) * | 1991-04-15 | 1992-06-16 | Miles Inc. | Encapsulated light emitting diode and method for encapsulation |
JPH0563241A (ja) * | 1991-08-30 | 1993-03-12 | Nippon Kayaku Co Ltd | 発光ダイオード素子封止用活性エネルギー線硬化樹脂組成物及びその硬化物 |
JPH0629577A (ja) * | 1992-07-10 | 1994-02-04 | Sumitomo Electric Ind Ltd | 半導体発光素子の製造方法 |
DE4242469A1 (de) * | 1992-12-16 | 1994-06-23 | Wacker Chemie Gmbh | Katalysatoren für Hydrosilylierungsreaktionen |
US5592397A (en) * | 1993-05-11 | 1997-01-07 | Tokyo Gas Co., Ltd. | Computer program product for determining elementary circuits and initial values of flow in a pipe network |
US5639845A (en) * | 1993-06-10 | 1997-06-17 | Shin-Etsu Chemical Co., Ltd. | Method for the preparation of a fluorine-containing organopolysiloxane |
TW262537B (zh) * | 1993-07-01 | 1995-11-11 | Allied Signal Inc | |
FR2717481B1 (fr) | 1994-03-18 | 1996-06-28 | Rhone Poulenc Chimie | Nouveaux complexes du platine utiles, notamment, comme catalyseurs d'hydrosilylation photoactivables et procédé en faisant application. |
DE4423195A1 (de) * | 1994-07-01 | 1996-01-04 | Wacker Chemie Gmbh | Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren |
US6099783A (en) * | 1995-06-06 | 2000-08-08 | Board Of Trustees Operating Michigan State University | Photopolymerizable compositions for encapsulating microelectronic devices |
US6600175B1 (en) * | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
US5777433A (en) * | 1996-07-11 | 1998-07-07 | Hewlett-Packard Company | High refractive index package material and a light emitting device encapsulated with such material |
US6319425B1 (en) * | 1997-07-07 | 2001-11-20 | Asahi Rubber Inc. | Transparent coating member for light-emitting diodes and a fluorescent color light source |
US6150546A (en) * | 1999-05-03 | 2000-11-21 | General Electric Company | Irradiation-curable silicone compositions, photo-active platinum (IV) compounds, and method |
JP3503131B2 (ja) * | 1999-06-03 | 2004-03-02 | サンケン電気株式会社 | 半導体発光装置 |
US6664318B1 (en) * | 1999-12-20 | 2003-12-16 | 3M Innovative Properties Company | Encapsulant compositions with thermal shock resistance |
KR20030053472A (ko) * | 2000-06-01 | 2003-06-28 | 사이픽스 이미징, 인코포레이티드 | 감열 현상용 감광성 마이크로캡슐을 함유하는 영상화 매체 |
JP4239439B2 (ja) * | 2000-07-06 | 2009-03-18 | セイコーエプソン株式会社 | 光学装置およびその製造方法ならびに光伝送装置 |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
US6650044B1 (en) | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
JP2002232018A (ja) | 2000-11-28 | 2002-08-16 | Nippon Telegr & Teleph Corp <Ntt> | 紫外光源の作製方法および紫外光源部品並びに光学装置の作製方法 |
JP3910080B2 (ja) * | 2001-02-23 | 2007-04-25 | 株式会社カネカ | 発光ダイオード |
JP2003155378A (ja) * | 2001-11-20 | 2003-05-27 | Kanegafuchi Chem Ind Co Ltd | 光学材料用硬化性組成物、光学用材料、光学用材料の製造方法および光学材料を用いた発光ダイオード |
JP2004186168A (ja) | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
JP2006509870A (ja) * | 2002-12-13 | 2006-03-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 反応性混合物のuv光開始又は熱硬化処理を実行することによって得られるレプリカのみならず、レプリカを製造する方法 |
CN102281659B (zh) * | 2002-12-26 | 2014-06-04 | 株式会社半导体能源研究所 | 发光装置和制造发光装置的方法 |
US7245072B2 (en) * | 2003-01-27 | 2007-07-17 | 3M Innovative Properties Company | Phosphor based light sources having a polymeric long pass reflector |
US7157839B2 (en) * | 2003-01-27 | 2007-01-02 | 3M Innovative Properties Company | Phosphor based light sources utilizing total internal reflection |
US6806658B2 (en) * | 2003-03-07 | 2004-10-19 | Agilent Technologies, Inc. | Method for making an LED |
KR100767604B1 (ko) | 2003-03-22 | 2007-10-18 | 삼성전기주식회사 | 발광 다이오드 소자 및 그 제조방법 |
US6921929B2 (en) * | 2003-06-27 | 2005-07-26 | Lockheed Martin Corporation | Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens |
TW200509329A (en) * | 2003-08-26 | 2005-03-01 | Yung-Shu Yang | LED package material and process |
JP4908736B2 (ja) * | 2003-10-01 | 2012-04-04 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JP4479882B2 (ja) * | 2003-11-20 | 2010-06-09 | 信越化学工業株式会社 | 砲弾型発光半導体装置 |
US7192795B2 (en) * | 2004-11-18 | 2007-03-20 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
US20060186428A1 (en) * | 2005-02-23 | 2006-08-24 | Tan Kheng L | Light emitting device with enhanced encapsulant adhesion using siloxane material and method for fabricating the device |
-
2005
- 2005-10-17 US US11/252,336 patent/US7314770B2/en not_active Expired - Fee Related
- 2005-11-14 EP EP05820867A patent/EP1812973B1/en not_active Not-in-force
- 2005-11-14 JP JP2007543144A patent/JP2008521252A/ja active Pending
- 2005-11-14 EP EP10175593A patent/EP2256833B1/en not_active Not-in-force
- 2005-11-14 AT AT05820867T patent/ATE494636T1/de not_active IP Right Cessation
- 2005-11-14 KR KR1020077013491A patent/KR20070089163A/ko not_active Application Discontinuation
- 2005-11-14 WO PCT/US2005/041067 patent/WO2006055456A1/en active Application Filing
- 2005-11-14 DE DE602005025795T patent/DE602005025795D1/de active Active
- 2005-11-17 TW TW094140453A patent/TWI401817B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313365A (en) * | 1992-06-30 | 1994-05-17 | Motorola, Inc. | Encapsulated electronic package |
US6020227A (en) * | 1995-09-12 | 2000-02-01 | National Semiconductor Corporation | Fabrication of multiple field-effect transistor structure having local threshold-adjust doping |
US20010019869A1 (en) * | 1998-11-18 | 2001-09-06 | Hsu Sheng Teng | Asymmetrical MOS channel structure with drain extension |
US6806509B2 (en) * | 2003-03-12 | 2004-10-19 | Shin-Etsu Chemical Co., Ltd. | Light-emitting semiconductor potting composition and light-emitting semiconductor device |
Also Published As
Publication number | Publication date |
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ATE494636T1 (de) | 2011-01-15 |
US7314770B2 (en) | 2008-01-01 |
KR20070089163A (ko) | 2007-08-30 |
JP2008521252A (ja) | 2008-06-19 |
WO2006055456A1 (en) | 2006-05-26 |
EP1812973A1 (en) | 2007-08-01 |
EP2256833B1 (en) | 2013-04-03 |
EP2256833A1 (en) | 2010-12-01 |
TW200701515A (en) | 2007-01-01 |
US20060105481A1 (en) | 2006-05-18 |
EP1812973B1 (en) | 2011-01-05 |
DE602005025795D1 (de) | 2011-02-17 |
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