ATE494636T1 - Verfahren zur herstellung eines lichtemittierenden bauelements mit einem siliziumhaltigen verkapselungsmittel - Google Patents
Verfahren zur herstellung eines lichtemittierenden bauelements mit einem siliziumhaltigen verkapselungsmittelInfo
- Publication number
- ATE494636T1 ATE494636T1 AT05820867T AT05820867T ATE494636T1 AT E494636 T1 ATE494636 T1 AT E494636T1 AT 05820867 T AT05820867 T AT 05820867T AT 05820867 T AT05820867 T AT 05820867T AT E494636 T1 ATE494636 T1 AT E494636T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- light emitting
- producing
- light
- emitting component
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 239000008393 encapsulating agent Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000006459 hydrosilylation reaction Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Led Device Packages (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Paints Or Removers (AREA)
- Sealing Material Composition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/993,460 US7192795B2 (en) | 2004-11-18 | 2004-11-18 | Method of making light emitting device with silicon-containing encapsulant |
US11/252,336 US7314770B2 (en) | 2004-11-18 | 2005-10-17 | Method of making light emitting device with silicon-containing encapsulant |
PCT/US2005/041067 WO2006055456A1 (en) | 2004-11-18 | 2005-11-14 | Method of making light emitting device with silicon-containing encapsulant |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE494636T1 true ATE494636T1 (de) | 2011-01-15 |
Family
ID=36127533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05820867T ATE494636T1 (de) | 2004-11-18 | 2005-11-14 | Verfahren zur herstellung eines lichtemittierenden bauelements mit einem siliziumhaltigen verkapselungsmittel |
Country Status (8)
Country | Link |
---|---|
US (1) | US7314770B2 (de) |
EP (2) | EP1812973B1 (de) |
JP (1) | JP2008521252A (de) |
KR (1) | KR20070089163A (de) |
AT (1) | ATE494636T1 (de) |
DE (1) | DE602005025795D1 (de) |
TW (1) | TWI401817B (de) |
WO (1) | WO2006055456A1 (de) |
Families Citing this family (82)
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US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
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US7655486B2 (en) | 2006-05-17 | 2010-02-02 | 3M Innovative Properties Company | Method of making light emitting device with multilayer silicon-containing encapsulant |
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US20070295968A1 (en) * | 2006-06-27 | 2007-12-27 | Kheng Leng Tan | Electroluminescent device with high refractive index and UV-resistant encapsulant |
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-
2005
- 2005-10-17 US US11/252,336 patent/US7314770B2/en not_active Expired - Fee Related
- 2005-11-14 EP EP05820867A patent/EP1812973B1/de not_active Not-in-force
- 2005-11-14 JP JP2007543144A patent/JP2008521252A/ja active Pending
- 2005-11-14 EP EP10175593A patent/EP2256833B1/de not_active Not-in-force
- 2005-11-14 AT AT05820867T patent/ATE494636T1/de not_active IP Right Cessation
- 2005-11-14 KR KR1020077013491A patent/KR20070089163A/ko not_active Application Discontinuation
- 2005-11-14 WO PCT/US2005/041067 patent/WO2006055456A1/en active Application Filing
- 2005-11-14 DE DE602005025795T patent/DE602005025795D1/de active Active
- 2005-11-17 TW TW094140453A patent/TWI401817B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US7314770B2 (en) | 2008-01-01 |
KR20070089163A (ko) | 2007-08-30 |
JP2008521252A (ja) | 2008-06-19 |
WO2006055456A1 (en) | 2006-05-26 |
EP1812973A1 (de) | 2007-08-01 |
EP2256833B1 (de) | 2013-04-03 |
EP2256833A1 (de) | 2010-12-01 |
TW200701515A (en) | 2007-01-01 |
US20060105481A1 (en) | 2006-05-18 |
TWI401817B (zh) | 2013-07-11 |
EP1812973B1 (de) | 2011-01-05 |
DE602005025795D1 (de) | 2011-02-17 |
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