JP2008521229A5 - - Google Patents
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- Publication number
- JP2008521229A5 JP2008521229A5 JP2007541957A JP2007541957A JP2008521229A5 JP 2008521229 A5 JP2008521229 A5 JP 2008521229A5 JP 2007541957 A JP2007541957 A JP 2007541957A JP 2007541957 A JP2007541957 A JP 2007541957A JP 2008521229 A5 JP2008521229 A5 JP 2008521229A5
- Authority
- JP
- Japan
- Prior art keywords
- containing layer
- ion
- crystal orientation
- region
- soi substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 24
- 150000002500 ions Chemical class 0.000 claims 10
- 239000013078 crystal Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 8
- 238000005468 ion implantation Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 238000002513 implantation Methods 0.000 claims 5
- 238000000137 annealing Methods 0.000 claims 4
- 239000007943 implant Substances 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- -1 oxygen ions Chemical class 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910003811 SiGeC Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000000227 grinding Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/992,150 | 2004-11-18 | ||
| US10/992,150 US7141457B2 (en) | 2004-11-18 | 2004-11-18 | Method to form Si-containing SOI and underlying substrate with different orientations |
| PCT/EP2005/056042 WO2006053890A1 (en) | 2004-11-18 | 2005-11-17 | Soi substrate materials and method to form si-containing soi and underlying substrate with different orientations |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008521229A JP2008521229A (ja) | 2008-06-19 |
| JP2008521229A5 true JP2008521229A5 (enExample) | 2008-10-02 |
| JP5236290B2 JP5236290B2 (ja) | 2013-07-17 |
Family
ID=36011164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007541957A Expired - Fee Related JP5236290B2 (ja) | 2004-11-18 | 2005-11-17 | Ｓｏｉ基板材料 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7141457B2 (enExample) |
| EP (1) | EP1829098A1 (enExample) |
| JP (1) | JP5236290B2 (enExample) |
| CN (1) | CN100533706C (enExample) |
| TW (1) | TWI374522B (enExample) |
| WO (1) | WO2006053890A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004119943A (ja) * | 2002-09-30 | 2004-04-15 | Renesas Technology Corp | 半導体ウェハおよびその製造方法 |
| US7531392B2 (en) * | 2006-02-27 | 2009-05-12 | International Business Machines Corporation | Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same |
| US7285480B1 (en) * | 2006-04-07 | 2007-10-23 | International Business Machines Corporation | Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof |
| US7732309B2 (en) | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
| US20080153271A1 (en) * | 2006-12-18 | 2008-06-26 | Applied Materials, Inc. | Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers |
| US7651902B2 (en) * | 2007-04-20 | 2010-01-26 | International Business Machines Corporation | Hybrid substrates and methods for forming such hybrid substrates |
| US7750406B2 (en) * | 2007-04-20 | 2010-07-06 | International Business Machines Corporation | Design structure incorporating a hybrid substrate |
| US7749829B2 (en) | 2007-05-01 | 2010-07-06 | Freescale Semiconductor, Inc. | Step height reduction between SOI and EPI for DSO and BOS integration |
| US7696573B2 (en) * | 2007-10-31 | 2010-04-13 | International Business Machines Corporation | Multiple crystallographic orientation semiconductor structures |
| JP2012089639A (ja) * | 2010-10-19 | 2012-05-10 | Sumitomo Electric Ind Ltd | 単結晶炭化珪素基板を有する複合基板 |
| US9676168B2 (en) | 2010-11-19 | 2017-06-13 | Lamart Corporation | Fire barrier layer and fire barrier film laminate |
| US8970032B2 (en) | 2011-09-21 | 2015-03-03 | Infineon Technologies Ag | Chip module and method for fabricating a chip module |
| US9275911B2 (en) | 2012-10-12 | 2016-03-01 | Globalfoundries Inc. | Hybrid orientation fin field effect transistor and planar field effect transistor |
| US10299407B2 (en) | 2015-06-29 | 2019-05-21 | Microsoft Technology Licensing, Llc | Differently oriented layered thermal conduit |
| EP3742476B1 (en) * | 2019-05-20 | 2024-11-06 | Infineon Technologies AG | Method of implanting an implant species into a substrate at different depths |
| KR102877317B1 (ko) | 2020-10-30 | 2025-10-27 | 삼성전자주식회사 | 반도체 웨이퍼 및 그 제조 방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2600299B2 (ja) * | 1988-06-24 | 1997-04-16 | ソニー株式会社 | 半導体装置の製造方法 |
| JPH0590117A (ja) * | 1991-09-27 | 1993-04-09 | Toshiba Corp | 単結晶薄膜半導体装置 |
| JP3571734B2 (ja) * | 1993-04-19 | 2004-09-29 | セイコーインスツルメンツ株式会社 | 集積回路 |
| US5726440A (en) * | 1995-11-06 | 1998-03-10 | Spire Corporation | Wavelength selective photodetector |
| JP3512701B2 (ja) * | 2000-03-10 | 2004-03-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2002299591A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体装置 |
| US6541356B2 (en) * | 2001-05-21 | 2003-04-01 | International Business Machines Corporation | Ultimate SIMOX |
| US6531375B1 (en) * | 2001-09-18 | 2003-03-11 | International Business Machines Corporation | Method of forming a body contact using BOX modification |
| US6998353B2 (en) * | 2001-11-05 | 2006-02-14 | Ibis Technology Corporation | Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers |
| KR20050044643A (ko) * | 2001-12-04 | 2005-05-12 | 신에쯔 한도타이 가부시키가이샤 | 접합 웨이퍼 및 접합 웨이퍼의 제조방법 |
| KR20040072738A (ko) * | 2002-01-23 | 2004-08-18 | 스피나커 세미컨덕터, 인크. | 변형 반도체 기판과 쇼트키 또는 쇼트키 콘택트와 유사한콘택트를 형성하는 소스 및/또는 드레인을 갖는 전계 효과트랜지스터 |
| US20030194846A1 (en) * | 2002-04-11 | 2003-10-16 | International Business Machines Corp. | Medium dose simox over a wide BOX thickness range by a multiple implant, multiple anneal process |
| JP2004119943A (ja) * | 2002-09-30 | 2004-04-15 | Renesas Technology Corp | 半導体ウェハおよびその製造方法 |
| US6835983B2 (en) * | 2002-10-25 | 2004-12-28 | International Business Machines Corporation | Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness |
| US20040195622A1 (en) * | 2003-04-07 | 2004-10-07 | United Microelectronics Corp. | Semiconductor structure with silicon on insulator |
| US7329923B2 (en) | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
| US7291886B2 (en) * | 2004-06-21 | 2007-11-06 | International Business Machines Corporation | Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs |
| JP2006040911A (ja) * | 2004-07-22 | 2006-02-09 | Renesas Technology Corp | 半導体装置及びその製造方法 |
-
2004
- 2004-11-18 US US10/992,150 patent/US7141457B2/en not_active Expired - Fee Related
-
2005
- 2005-11-16 TW TW094140234A patent/TWI374522B/zh not_active IP Right Cessation
- 2005-11-17 CN CNB200580036878XA patent/CN100533706C/zh not_active Expired - Fee Related
- 2005-11-17 JP JP2007541957A patent/JP5236290B2/ja not_active Expired - Fee Related
- 2005-11-17 WO PCT/EP2005/056042 patent/WO2006053890A1/en not_active Ceased
- 2005-11-17 EP EP05808127A patent/EP1829098A1/en not_active Ceased
-
2006
- 2006-10-18 US US11/550,681 patent/US7759772B2/en not_active Expired - Fee Related
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