TWI374522B - Method to form si-containing soi and underlying substrate with different orientations - Google Patents

Method to form si-containing soi and underlying substrate with different orientations Download PDF

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Publication number
TWI374522B
TWI374522B TW094140234A TW94140234A TWI374522B TW I374522 B TWI374522 B TW I374522B TW 094140234 A TW094140234 A TW 094140234A TW 94140234 A TW94140234 A TW 94140234A TW I374522 B TWI374522 B TW I374522B
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TW
Taiwan
Prior art keywords
layer
ion
germanium
region
substrate material
Prior art date
Application number
TW094140234A
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English (en)
Chinese (zh)
Other versions
TW200701408A (en
Inventor
Meikei Ieong
Devendra K Sadana
Ghavam Shahidi
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Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200701408A publication Critical patent/TW200701408A/zh
Application granted granted Critical
Publication of TWI374522B publication Critical patent/TWI374522B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
TW094140234A 2004-11-18 2005-11-16 Method to form si-containing soi and underlying substrate with different orientations TWI374522B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/992,150 US7141457B2 (en) 2004-11-18 2004-11-18 Method to form Si-containing SOI and underlying substrate with different orientations

Publications (2)

Publication Number Publication Date
TW200701408A TW200701408A (en) 2007-01-01
TWI374522B true TWI374522B (en) 2012-10-11

Family

ID=36011164

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094140234A TWI374522B (en) 2004-11-18 2005-11-16 Method to form si-containing soi and underlying substrate with different orientations

Country Status (6)

Country Link
US (2) US7141457B2 (enExample)
EP (1) EP1829098A1 (enExample)
JP (1) JP5236290B2 (enExample)
CN (1) CN100533706C (enExample)
TW (1) TWI374522B (enExample)
WO (1) WO2006053890A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119943A (ja) * 2002-09-30 2004-04-15 Renesas Technology Corp 半導体ウェハおよびその製造方法
US7531392B2 (en) * 2006-02-27 2009-05-12 International Business Machines Corporation Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same
US7285480B1 (en) * 2006-04-07 2007-10-23 International Business Machines Corporation Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof
US7732309B2 (en) 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US20080153271A1 (en) * 2006-12-18 2008-06-26 Applied Materials, Inc. Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers
US7651902B2 (en) * 2007-04-20 2010-01-26 International Business Machines Corporation Hybrid substrates and methods for forming such hybrid substrates
US7750406B2 (en) * 2007-04-20 2010-07-06 International Business Machines Corporation Design structure incorporating a hybrid substrate
US7749829B2 (en) 2007-05-01 2010-07-06 Freescale Semiconductor, Inc. Step height reduction between SOI and EPI for DSO and BOS integration
US7696573B2 (en) * 2007-10-31 2010-04-13 International Business Machines Corporation Multiple crystallographic orientation semiconductor structures
JP2012089639A (ja) * 2010-10-19 2012-05-10 Sumitomo Electric Ind Ltd 単結晶炭化珪素基板を有する複合基板
US9676168B2 (en) 2010-11-19 2017-06-13 Lamart Corporation Fire barrier layer and fire barrier film laminate
US8970032B2 (en) 2011-09-21 2015-03-03 Infineon Technologies Ag Chip module and method for fabricating a chip module
US9275911B2 (en) 2012-10-12 2016-03-01 Globalfoundries Inc. Hybrid orientation fin field effect transistor and planar field effect transistor
US10299407B2 (en) 2015-06-29 2019-05-21 Microsoft Technology Licensing, Llc Differently oriented layered thermal conduit
EP3742476B1 (en) * 2019-05-20 2024-11-06 Infineon Technologies AG Method of implanting an implant species into a substrate at different depths
KR102877317B1 (ko) 2020-10-30 2025-10-27 삼성전자주식회사 반도체 웨이퍼 및 그 제조 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600299B2 (ja) * 1988-06-24 1997-04-16 ソニー株式会社 半導体装置の製造方法
JPH0590117A (ja) * 1991-09-27 1993-04-09 Toshiba Corp 単結晶薄膜半導体装置
JP3571734B2 (ja) * 1993-04-19 2004-09-29 セイコーインスツルメンツ株式会社 集積回路
US5726440A (en) * 1995-11-06 1998-03-10 Spire Corporation Wavelength selective photodetector
JP3512701B2 (ja) * 2000-03-10 2004-03-31 株式会社東芝 半導体装置及びその製造方法
JP2002299591A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 半導体装置
US6541356B2 (en) * 2001-05-21 2003-04-01 International Business Machines Corporation Ultimate SIMOX
US6531375B1 (en) * 2001-09-18 2003-03-11 International Business Machines Corporation Method of forming a body contact using BOX modification
US6998353B2 (en) * 2001-11-05 2006-02-14 Ibis Technology Corporation Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers
KR20050044643A (ko) * 2001-12-04 2005-05-12 신에쯔 한도타이 가부시키가이샤 접합 웨이퍼 및 접합 웨이퍼의 제조방법
KR20040072738A (ko) * 2002-01-23 2004-08-18 스피나커 세미컨덕터, 인크. 변형 반도체 기판과 쇼트키 또는 쇼트키 콘택트와 유사한콘택트를 형성하는 소스 및/또는 드레인을 갖는 전계 효과트랜지스터
US20030194846A1 (en) * 2002-04-11 2003-10-16 International Business Machines Corp. Medium dose simox over a wide BOX thickness range by a multiple implant, multiple anneal process
JP2004119943A (ja) * 2002-09-30 2004-04-15 Renesas Technology Corp 半導体ウェハおよびその製造方法
US6835983B2 (en) * 2002-10-25 2004-12-28 International Business Machines Corporation Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness
US20040195622A1 (en) * 2003-04-07 2004-10-07 United Microelectronics Corp. Semiconductor structure with silicon on insulator
US7329923B2 (en) 2003-06-17 2008-02-12 International Business Machines Corporation High-performance CMOS devices on hybrid crystal oriented substrates
US7291886B2 (en) * 2004-06-21 2007-11-06 International Business Machines Corporation Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs
JP2006040911A (ja) * 2004-07-22 2006-02-09 Renesas Technology Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN101048862A (zh) 2007-10-03
US7141457B2 (en) 2006-11-28
CN100533706C (zh) 2009-08-26
JP2008521229A (ja) 2008-06-19
EP1829098A1 (en) 2007-09-05
US20080128866A1 (en) 2008-06-05
TW200701408A (en) 2007-01-01
JP5236290B2 (ja) 2013-07-17
US20060105507A1 (en) 2006-05-18
WO2006053890A1 (en) 2006-05-26
US7759772B2 (en) 2010-07-20

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