TWI358792B - - Google Patents

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Publication number
TWI358792B
TWI358792B TW096129961A TW96129961A TWI358792B TW I358792 B TWI358792 B TW I358792B TW 096129961 A TW096129961 A TW 096129961A TW 96129961 A TW96129961 A TW 96129961A TW I358792 B TWI358792 B TW I358792B
Authority
TW
Taiwan
Prior art keywords
region
transistor
semiconductor device
film
source
Prior art date
Application number
TW096129961A
Other languages
English (en)
Chinese (zh)
Other versions
TW200816385A (en
Inventor
Akira Hokazono
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200816385A publication Critical patent/TW200816385A/zh
Application granted granted Critical
Publication of TWI358792B publication Critical patent/TWI358792B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8312—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW096129961A 2006-08-31 2007-08-14 Semiconductor device having CMOS elements TW200816385A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006236740A JP2008060408A (ja) 2006-08-31 2006-08-31 半導体装置

Publications (2)

Publication Number Publication Date
TW200816385A TW200816385A (en) 2008-04-01
TWI358792B true TWI358792B (enExample) 2012-02-21

Family

ID=39150294

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096129961A TW200816385A (en) 2006-08-31 2007-08-14 Semiconductor device having CMOS elements

Country Status (3)

Country Link
US (1) US20080054364A1 (enExample)
JP (1) JP2008060408A (enExample)
TW (1) TW200816385A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7395924B2 (en) 2004-03-12 2008-07-08 Japan Tobacco Inc. Hinge-lid type package for rod-like smoking articles and a blank therefor

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5286701B2 (ja) 2007-06-27 2013-09-11 ソニー株式会社 半導体装置および半導体装置の製造方法
US8129790B2 (en) * 2008-03-17 2012-03-06 Kabushiki Kaisha Toshiba HOT process STI in SRAM device and method of manufacturing
WO2009122542A1 (ja) 2008-03-31 2009-10-08 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
DE102008030854B4 (de) 2008-06-30 2014-03-20 Advanced Micro Devices, Inc. MOS-Transistoren mit abgesenkten Drain- und Source-Bereichen und nicht-konformen Metallsilizidgebieten und Verfahren zum Herstellen der Transistoren
DE102008045034B4 (de) * 2008-08-29 2012-04-05 Advanced Micro Devices, Inc. Durchlassstromeinstellung für Transistoren, die im gleichen aktiven Gebiet hergestellt sind, durch lokales Vorsehen eines eingebetteten verformungsinduzierenden Halbleitermaterials in dem aktiven Gebiet
US20100109045A1 (en) * 2008-10-30 2010-05-06 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system employing stress-engineered layers
US8106456B2 (en) * 2009-07-29 2012-01-31 International Business Machines Corporation SOI transistors having an embedded extension region to improve extension resistance and channel strain characteristics
US9087687B2 (en) 2011-12-23 2015-07-21 International Business Machines Corporation Thin heterostructure channel device
CN103515435B (zh) * 2012-06-26 2016-12-21 中芯国际集成电路制造(上海)有限公司 Mos晶体管及其形成方法、sram存储单元电路
US9679818B2 (en) * 2014-10-31 2017-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188274A (ja) * 2001-12-19 2003-07-04 Toshiba Corp 半導体装置及びその製造方法
KR100450683B1 (ko) * 2002-09-04 2004-10-01 삼성전자주식회사 Ｓｏｉ 기판에 형성되는 에스램 디바이스
US6900502B2 (en) * 2003-04-03 2005-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel on insulator device
US7303949B2 (en) * 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
US7198995B2 (en) * 2003-12-12 2007-04-03 International Business Machines Corporation Strained finFETs and method of manufacture
US7098499B2 (en) * 2004-08-16 2006-08-29 Chih-Hsin Wang Electrically alterable non-volatile memory cell
EP1911086A2 (en) * 2005-07-26 2008-04-16 Amberwave Systems Corporation Solutions integrated circuit integration of alternative active area materials
US8441000B2 (en) * 2006-02-01 2013-05-14 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
US7342284B2 (en) * 2006-02-16 2008-03-11 United Microelectronics Corp. Semiconductor MOS transistor device and method for making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7395924B2 (en) 2004-03-12 2008-07-08 Japan Tobacco Inc. Hinge-lid type package for rod-like smoking articles and a blank therefor

Also Published As

Publication number Publication date
JP2008060408A (ja) 2008-03-13
US20080054364A1 (en) 2008-03-06
TW200816385A (en) 2008-04-01

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MM4A Annulment or lapse of patent due to non-payment of fees