JP2008515654A5 - - Google Patents

Download PDF

Info

Publication number
JP2008515654A5
JP2008515654A5 JP2007536710A JP2007536710A JP2008515654A5 JP 2008515654 A5 JP2008515654 A5 JP 2008515654A5 JP 2007536710 A JP2007536710 A JP 2007536710A JP 2007536710 A JP2007536710 A JP 2007536710A JP 2008515654 A5 JP2008515654 A5 JP 2008515654A5
Authority
JP
Japan
Prior art keywords
nanowire
conductive polymer
polymer layer
substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007536710A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008515654A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2005/034394 external-priority patent/WO2006124055A2/en
Publication of JP2008515654A publication Critical patent/JP2008515654A/ja
Publication of JP2008515654A5 publication Critical patent/JP2008515654A5/ja
Pending legal-status Critical Current

Links

JP2007536710A 2004-10-12 2005-09-22 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス Pending JP2008515654A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61783004P 2004-10-12 2004-10-12
PCT/US2005/034394 WO2006124055A2 (en) 2004-10-12 2005-09-22 Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires

Publications (2)

Publication Number Publication Date
JP2008515654A JP2008515654A (ja) 2008-05-15
JP2008515654A5 true JP2008515654A5 (enExample) 2008-11-06

Family

ID=37431705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007536710A Pending JP2008515654A (ja) 2004-10-12 2005-09-22 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス

Country Status (4)

Country Link
US (2) US7345307B2 (enExample)
EP (1) EP1805823A2 (enExample)
JP (1) JP2008515654A (enExample)
WO (1) WO2006124055A2 (enExample)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US8958917B2 (en) * 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US20110125412A1 (en) * 1998-12-17 2011-05-26 Hach Company Remote monitoring of carbon nanotube sensor
US9056783B2 (en) * 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US20100038119A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
US20100038121A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
AU6531600A (en) 1999-08-27 2001-03-26 Lex Kosowsky Current carrying structure using voltage switchable dielectric material
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
KR100625999B1 (ko) * 2004-02-26 2006-09-20 삼성에스디아이 주식회사 도너 시트, 상기 도너 시트의 제조방법, 상기 도너 시트를이용한 박막 트랜지스터의 제조방법, 및 상기 도너 시트를이용한 평판 표시장치의 제조방법
JP4856900B2 (ja) * 2005-06-13 2012-01-18 パナソニック株式会社 電界効果トランジスタの製造方法
EP1938381A2 (en) * 2005-09-23 2008-07-02 Nanosys, Inc. Methods for nanostructure doping
US7492015B2 (en) * 2005-11-10 2009-02-17 International Business Machines Corporation Complementary carbon nanotube triple gate technology
US20100264225A1 (en) * 2005-11-22 2010-10-21 Lex Kosowsky Wireless communication device using voltage switchable dielectric material
WO2007062122A2 (en) 2005-11-22 2007-05-31 Shocking Technologies, Inc. Semiconductor devices including voltage switchable materials for over-voltage protection
US7692610B2 (en) * 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20070079744A (ko) * 2006-02-03 2007-08-08 삼성전자주식회사 반도체성 비율을 높인 탄소나노튜브를 이용한 유기 반도체소재, 유기 반도체 박막 및 이를 채용한 유기 반도체 소자
JP4574634B2 (ja) * 2006-04-03 2010-11-04 キヤノン株式会社 シリコンワイヤを含み構成される物品の製造方法
KR101206661B1 (ko) * 2006-06-02 2012-11-30 삼성전자주식회사 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자
TWI412079B (zh) * 2006-07-28 2013-10-11 半導體能源研究所股份有限公司 製造顯示裝置的方法
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US20080029405A1 (en) * 2006-07-29 2008-02-07 Lex Kosowsky Voltage switchable dielectric material having conductive or semi-conductive organic material
US7968010B2 (en) 2006-07-29 2011-06-28 Shocking Technologies, Inc. Method for electroplating a substrate
KR101346246B1 (ko) * 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2084748A4 (en) 2006-09-24 2011-09-28 Shocking Technologies Inc FORMULATIONS FOR A VOLTAGE-SWITCHABLE DIELECTRIC MATERIAL WITH A DEVICED VOLTAGE CONTACT BEHAVIOR AND METHOD OF MANUFACTURING THEREOF
JP2010504437A (ja) * 2006-09-24 2010-02-12 ショッキング テクノロジーズ インコーポレイテッド 電圧で切替可能な誘電体材料および光補助を用いた基板デバイスをメッキする技法
US8018568B2 (en) 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
EP3595016A1 (en) 2006-10-12 2020-01-15 Cambrios Film Solutions Corporation Nanowire-based transparent conductors and method of making them
US20080210929A1 (en) * 2007-03-01 2008-09-04 Motorola, Inc. Organic Thin Film Transistor
KR101356238B1 (ko) * 2007-03-26 2014-01-28 삼성전자주식회사 Ｕｖ 패터닝 가능한 전도성 고분자 필름의 제조방법 및이에 의해 제조되는 전도성 고분자 필름
EP2477229B1 (en) 2007-04-20 2021-06-23 Cambrios Film Solutions Corporation Composite transparent conductors and methods of forming the same
WO2008144759A2 (en) * 2007-05-21 2008-11-27 Plextronics, Inc. Organic electrodes and electronic devices
WO2008144762A2 (en) * 2007-05-21 2008-11-27 Plextronics, Inc. Organic electrodes and electronic devices
KR100861131B1 (ko) * 2007-05-23 2008-09-30 삼성전자주식회사 전도성 고분자를 이용한 이미지 형성체, 이의 제조 방법 및이를 이용한 이미지 형성장치
US20090047502A1 (en) * 2007-08-13 2009-02-19 Smart Nanomaterials, Llc Nano-enhanced modularly constructed composite panel
US20090050856A1 (en) * 2007-08-20 2009-02-26 Lex Kosowsky Voltage switchable dielectric material incorporating modified high aspect ratio particles
US20100224862A1 (en) * 2007-09-07 2010-09-09 Hiroyuki Endoh Carbon nanotube structure and thin film transistor
JP2011500184A (ja) * 2007-10-15 2011-01-06 ユニヴァルシテ カソリック デ ルーバン 薬物溶出ナノワイヤアレイ
KR100949375B1 (ko) * 2007-10-31 2010-03-25 포항공과대학교 산학협력단 미세 와이어 제조 방법, 그리고 미세 와이어를 포함하는 센서 제조 방법
FR2925226A1 (fr) * 2007-12-12 2009-06-19 Commissariat Energie Atomique Transistor organique ayant des objets nanometriques de forme filaire dans une matrice organique semi-conductrice et procede de realisation
US8206614B2 (en) 2008-01-18 2012-06-26 Shocking Technologies, Inc. Voltage switchable dielectric material having bonded particle constituents
JP5063500B2 (ja) 2008-02-08 2012-10-31 富士通コンポーネント株式会社 パネル型入力装置、パネル型入力装置の製造方法、及びパネル型入力装置を備えた電子機器
US20090220771A1 (en) * 2008-02-12 2009-09-03 Robert Fleming Voltage switchable dielectric material with superior physical properties for structural applications
KR101333906B1 (ko) * 2008-08-22 2013-11-27 히타치가세이가부시끼가이샤 감광성 도전 필름, 도전막의 형성 방법, 도전 패턴의 형성 방법 및 도전막 기판
KR20100035380A (ko) * 2008-09-26 2010-04-05 삼성전자주식회사 박막형 센싱부재를 이용한 화학 센서
US9208931B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductor-on-conductor core shelled particles
JP2012504870A (ja) 2008-09-30 2012-02-23 ショッキング テクノロジーズ インコーポレイテッド 導電コアシェル粒子を含有する電圧で切替可能な誘電体材料
GB0821980D0 (en) * 2008-12-02 2009-01-07 Cambridge Entpr Ltd Optoelectronic device
US8399773B2 (en) 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US9226391B2 (en) 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
KR101679099B1 (ko) 2009-03-26 2016-11-23 쇼킹 테크놀로지스 인코포레이티드 전압 스위칭형 유전 물질을 갖는 소자
KR20120102489A (ko) 2009-04-10 2012-09-18 스미또모 가가꾸 가부시키가이샤 금속 복합체 및 그의 조성물
US8199045B1 (en) * 2009-04-13 2012-06-12 Exelis Inc. Nickel nanostrand ESD/conductive coating or composite
US9304132B2 (en) 2009-04-16 2016-04-05 President And Fellows Of Harvard College Molecular delivery with nanowires
JP5613230B2 (ja) 2009-06-15 2014-10-22 ウィリアム・マーシュ・ライス・ユニバーシティ アルカリ金属曝露によってカーボンナノチューブから製造されるグラフェンナノリボン
KR20130048717A (ko) * 2010-02-24 2013-05-10 캄브리오스 테크놀로지즈 코포레이션 나노와이어 기반의 투명 도전체 및 이를 패터닝하는 방법
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
WO2011149991A1 (en) * 2010-05-24 2011-12-01 The Regents Of The University Of California Inorganic nanostructure-organic polymer heterostructures useful for thermoelectric devices
EP2621582A2 (en) * 2010-09-29 2013-08-07 President and Fellows of Harvard College Molecular delivery with nanowires
WO2013040356A1 (en) 2011-09-14 2013-03-21 William Marsh Rice University Solvent-based methods for production of graphene nanoribbons
MX364402B (es) 2012-01-27 2019-04-24 Univ Rice William M Fluidos de perforacion que incorporan nanocintas de carbono magnetico y nanocintas de carbono funcionalizado magnetico y metodos de uso de las mismas.
US8710490B2 (en) * 2012-09-27 2014-04-29 Intel Corporation Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
US8785909B2 (en) * 2012-09-27 2014-07-22 Intel Corporation Non-planar semiconductor device having channel region with low band-gap cladding layer
US8735869B2 (en) * 2012-09-27 2014-05-27 Intel Corporation Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
KR101980198B1 (ko) * 2012-11-12 2019-05-21 삼성전자주식회사 신축성 트랜지스터용 채널층
KR102105810B1 (ko) 2012-11-20 2020-04-29 메르크 파텐트 게엠베하 전자 장치 제조용 고순도 용매 중의 제형
US8768271B1 (en) 2012-12-19 2014-07-01 Intel Corporation Group III-N transistors on nanoscale template structures
US9840418B2 (en) 2014-06-16 2017-12-12 William Marsh Rice University Production of graphene nanoplatelets by oxidative anhydrous acidic media
US20180169403A1 (en) 2015-01-09 2018-06-21 President And Fellows Of Harvard College Nanowire arrays for neurotechnology and other applications
US9748113B2 (en) * 2015-07-30 2017-08-29 Veeco Intruments Inc. Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
GB201517629D0 (en) * 2015-10-06 2015-11-18 Isis Innovation Device architecture
WO2018068170A1 (en) * 2016-10-10 2018-04-19 Boe Technology Group Co., Ltd. Thin film transistor, display panel and display apparatus having the same, and fabricating method thereof
CN106744669B (zh) * 2016-11-23 2019-01-04 宁波大学 一种基于波导器件的单根纳米线的转移方法
CN108459055B (zh) * 2017-02-20 2020-06-19 天津大学 聚吡咯表面修饰硅纳米线气敏元件及其应用
CN106876479B (zh) * 2017-04-19 2020-03-06 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板及其制备方法、显示面板
US11165032B2 (en) * 2019-09-05 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor using carbon nanotubes
US10994387B1 (en) * 2020-09-09 2021-05-04 King Abdulaziz University Fabrication of flexible conductive films, with semiconductive material, formed with rubbing-in technology for elastic or deformable devices

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962863A (en) 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
WO1997049132A1 (en) 1996-06-20 1997-12-24 Jeffrey Frey Light-emitting semiconductor device
KR100277881B1 (ko) 1998-06-16 2001-02-01 김영환 트랜지스터
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6815218B1 (en) 1999-06-09 2004-11-09 Massachusetts Institute Of Technology Methods for manufacturing bioelectronic devices
EP1194960B1 (en) 1999-07-02 2010-09-15 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6438025B1 (en) 1999-09-08 2002-08-20 Sergei Skarupo Magnetic memory device
CN100366528C (zh) 1999-10-27 2008-02-06 威廉马歇莱思大学 碳质毫微管的宏观有序集合体
RU2173003C2 (ru) 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
KR100360476B1 (ko) 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
US6586785B2 (en) 2000-06-29 2003-07-01 California Institute Of Technology Aerosol silicon nanoparticles for use in semiconductor device fabrication
EP1299914B1 (de) 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
US6447663B1 (en) 2000-08-01 2002-09-10 Ut-Battelle, Llc Programmable nanometer-scale electrolytic metal deposition and depletion
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
AU8664901A (en) 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
CA2430888C (en) 2000-12-11 2013-10-22 President And Fellows Of Harvard College Nanosensors
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6593065B2 (en) 2001-03-12 2003-07-15 California Institute Of Technology Method of fabricating nanometer-scale flowchannels and trenches with self-aligned electrodes and the structures formed by the same
KR20040000418A (ko) 2001-03-30 2004-01-03 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터제조되는 디바이스
US7084507B2 (en) 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
JP2003017508A (ja) 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
US6896864B2 (en) 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
US6672925B2 (en) 2001-08-17 2004-01-06 Motorola, Inc. Vacuum microelectronic device and method
NZ513637A (en) 2001-08-20 2004-02-27 Canterprise Ltd Nanoscale electronic devices & fabrication methods
WO2003019586A1 (en) 2001-08-30 2003-03-06 Koninklijke Philips Electronics N.V. Magnetoresistive device and electronic device
JP2003108021A (ja) 2001-09-28 2003-04-11 Hitachi Ltd 表示装置
US20040005258A1 (en) 2001-12-12 2004-01-08 Fonash Stephen J. Chemical reactor templates: sacrificial layer fabrication and template use
US7956525B2 (en) * 2003-05-16 2011-06-07 Nanomix, Inc. Flexible nanostructure electronic devices
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
US7049625B2 (en) 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20030189202A1 (en) 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US6760245B2 (en) 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
US7204388B2 (en) * 2002-08-14 2007-04-17 International Molded Packaging Corporation Latchable container system
US7358121B2 (en) 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
CN100584921C (zh) * 2002-09-05 2010-01-27 奈米系统股份有限公司 促进电荷转移至纳米结构或自纳米结构转移出电荷的有机物
AU2003275203A1 (en) * 2002-09-24 2004-04-19 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
US7115916B2 (en) 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
WO2004032193A2 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
TWI319201B (en) * 2002-09-30 2010-01-01 Nanosys Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7068868B1 (en) * 2002-11-12 2006-06-27 Ifos, Inc. Sensing devices based on evanescent optical coupling
JP2004247716A (ja) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp 積層体の製造方法
CN1863954B (zh) * 2003-08-04 2013-07-31 纳米系统公司 制备纳米线复合体的系统和方法及由此得到的电子衬底
US20070158642A1 (en) * 2003-12-19 2007-07-12 Regents Of The University Of California Active electronic devices with nanowire composite components
KR20070061552A (ko) * 2004-08-27 2007-06-13 이 아이 듀폰 디 네모아 앤드 캄파니 반도전성 침투 네트워크
US7960037B2 (en) * 2004-12-03 2011-06-14 The Regents Of The University Of California Carbon nanotube polymer composition and devices

Similar Documents

Publication Publication Date Title
JP2008515654A5 (enExample)
JP2009545878A5 (enExample)
Kim et al. Highly robust neutral plane oxide TFTs withstanding 0.25 mm bending radius for stretchable electronics
JP2009158936A5 (enExample)
JP2010186994A5 (ja) 半導体装置
JP2007512680A5 (enExample)
JP2006126817A5 (enExample)
JP2007088418A5 (enExample)
JP2010183022A5 (ja) 半導体装置
JP2008235873A5 (enExample)
JP2010153828A5 (ja) 半導体装置
JP2007329500A5 (enExample)
JP2005531131A5 (enExample)
EP1710840A3 (en) Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
JP2006525154A5 (enExample)
JP2011100997A5 (ja) 半導体装置
EP1990020A3 (en) Temperature monitoring return electrode
JP2009538525A5 (enExample)
JP2011029579A5 (ja) 表示装置
ATE506676T1 (de) Dünnfilm-speicherbaustein mit variablem widerstand
JP2011077517A5 (ja) アクティブマトリクス型表示装置
JP2009278113A (ja) 薄膜トランジスタ
JP2011192982A5 (ja) 半導体メモリ装置及び半導体メモリ装置の駆動方法
JP2007529112A5 (enExample)
JP2008083662A5 (enExample)