JP2008513925A5 - - Google Patents

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Publication number
JP2008513925A5
JP2008513925A5 JP2007532356A JP2007532356A JP2008513925A5 JP 2008513925 A5 JP2008513925 A5 JP 2008513925A5 JP 2007532356 A JP2007532356 A JP 2007532356A JP 2007532356 A JP2007532356 A JP 2007532356A JP 2008513925 A5 JP2008513925 A5 JP 2008513925A5
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JP
Japan
Prior art keywords
voltage
signal
response
asserted
low
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JP2007532356A
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English (en)
Japanese (ja)
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JP5101286B2 (ja
JP2008513925A (ja
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Priority claimed from US10/946,951 external-priority patent/US7187600B2/en
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Publication of JP2008513925A publication Critical patent/JP2008513925A/ja
Publication of JP2008513925A5 publication Critical patent/JP2008513925A5/ja
Application granted granted Critical
Publication of JP5101286B2 publication Critical patent/JP5101286B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007532356A 2004-09-22 2005-08-30 集積回路を誤った動作から保護する方法および装置 Expired - Fee Related JP5101286B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/946,951 2004-09-22
US10/946,951 US7187600B2 (en) 2004-09-22 2004-09-22 Method and apparatus for protecting an integrated circuit from erroneous operation
PCT/US2005/031031 WO2006036443A2 (en) 2004-09-22 2005-08-30 Method and apparatus for protecting an integrated circuit from erroneous operation

Publications (3)

Publication Number Publication Date
JP2008513925A JP2008513925A (ja) 2008-05-01
JP2008513925A5 true JP2008513925A5 (enExample) 2008-10-16
JP5101286B2 JP5101286B2 (ja) 2012-12-19

Family

ID=36073798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007532356A Expired - Fee Related JP5101286B2 (ja) 2004-09-22 2005-08-30 集積回路を誤った動作から保護する方法および装置

Country Status (5)

Country Link
US (1) US7187600B2 (enExample)
JP (1) JP5101286B2 (enExample)
KR (1) KR101110994B1 (enExample)
CN (1) CN100594551C (enExample)
WO (1) WO2006036443A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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JP2007066037A (ja) * 2005-08-31 2007-03-15 Renesas Technology Corp 半導体集積回路
US7724603B2 (en) * 2007-08-03 2010-05-25 Freescale Semiconductor, Inc. Method and circuit for preventing high voltage memory disturb
US8051467B2 (en) * 2008-08-26 2011-11-01 Atmel Corporation Secure information processing
US7969803B2 (en) 2008-12-16 2011-06-28 Macronix International Co., Ltd. Method and apparatus for protection of non-volatile memory in presence of out-of-specification operating voltage
JP5348541B2 (ja) * 2009-05-20 2013-11-20 ルネサスエレクトロニクス株式会社 半導体装置
JP5328525B2 (ja) * 2009-07-02 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置
CN102034523B (zh) * 2009-09-27 2013-09-18 上海宏力半导体制造有限公司 半导体存储装置和减少半导体存储装置芯片面积的方法
US8330502B2 (en) * 2009-11-25 2012-12-11 Freescale Semiconductor, Inc. Systems and methods for detecting interference in an integrated circuit
JP5385220B2 (ja) * 2010-06-30 2014-01-08 ルネサスエレクトロニクス株式会社 不揮発性メモリ、データ処理装置、及びマイクロコンピュータ応用システム
JP5085744B2 (ja) 2011-01-05 2012-11-28 株式会社東芝 半導体記憶装置
TWI473099B (zh) * 2011-12-23 2015-02-11 Phison Electronics Corp 記憶體儲存裝置、記憶體控制器與控制方法
US8634267B2 (en) 2012-05-14 2014-01-21 Sandisk Technologies Inc. Flash memory chip power management for data reliability and methods thereof
US8760923B2 (en) * 2012-08-28 2014-06-24 Freescale Semiconductor, Inc. Non-volatile memory (NVM) that uses soft programming
KR102081923B1 (ko) * 2013-02-04 2020-02-26 삼성전자주식회사 메모리 시스템 및 메모리 컨트롤러의 동작 방법
CN109767803A (zh) 2013-08-09 2019-05-17 慧荣科技股份有限公司 数据储存装置及其电压保护方法
TWI482161B (zh) * 2013-08-09 2015-04-21 Silicon Motion Inc 資料儲存裝置及其電壓偵測及資料保護方法
FR3041466B1 (fr) * 2015-09-21 2017-09-08 Stmicroelectronics Rousset Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant
KR20180101760A (ko) * 2017-03-06 2018-09-14 에스케이하이닉스 주식회사 저장 장치, 데이터 처리 시스템 및 이의 동작 방법
US10747282B2 (en) * 2018-10-17 2020-08-18 Stmicroelectronics International N.V. Test circuit for electronic device permitting interface control between two supply stacks in a production test of the electronic device
TWI682397B (zh) * 2018-12-12 2020-01-11 新唐科技股份有限公司 資料處理系統與資料處理方法
US10586600B1 (en) 2019-01-28 2020-03-10 Micron Technology, Inc. High-voltage shifter with reduced transistor degradation
US11398282B2 (en) * 2019-05-31 2022-07-26 Micron Technology, Inc. Intelligent charge pump architecture for flash array
US10877541B1 (en) * 2019-12-30 2020-12-29 Micron Technology, Inc. Power delivery timing for memory
KR102832602B1 (ko) 2021-04-29 2025-07-09 삼성전자주식회사 스토리지 장치 및 메모리 시스템
US11641160B1 (en) 2022-05-11 2023-05-02 Nanya Technology Corporation Power providing circuit and power providing method thereof

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JP2568442B2 (ja) * 1989-07-14 1997-01-08 セイコー電子工業株式会社 半導体集積回路装置
JPH0525536U (ja) * 1991-05-31 1993-04-02 株式会社東芝 不揮発性メモリ制御回路
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JPH08272625A (ja) * 1995-03-29 1996-10-18 Toshiba Corp マルチプログラム実行制御装置及び方法
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US5890191A (en) 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
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JP2002182984A (ja) * 2000-12-15 2002-06-28 Toshiba Corp データ処理装置
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