FR3041466B1 - Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant - Google Patents

Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant

Info

Publication number
FR3041466B1
FR3041466B1 FR1558859A FR1558859A FR3041466B1 FR 3041466 B1 FR3041466 B1 FR 3041466B1 FR 1558859 A FR1558859 A FR 1558859A FR 1558859 A FR1558859 A FR 1558859A FR 3041466 B1 FR3041466 B1 FR 3041466B1
Authority
FR
France
Prior art keywords
controlling
memory device
eeprom type
corresponding device
eeprom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1558859A
Other languages
English (en)
Other versions
FR3041466A1 (fr
Inventor
Francois Tailliet
Marc Battista
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1558859A priority Critical patent/FR3041466B1/fr
Priority to CN201610102941.5A priority patent/CN106548808B/zh
Priority to CN201620139760.5U priority patent/CN205406096U/zh
Priority to US15/053,989 priority patent/US9472307B1/en
Priority to DE102016104336.2A priority patent/DE102016104336A1/de
Publication of FR3041466A1 publication Critical patent/FR3041466A1/fr
Application granted granted Critical
Publication of FR3041466B1 publication Critical patent/FR3041466B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0407—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals on power on
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
FR1558859A 2015-09-21 2015-09-21 Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant Expired - Fee Related FR3041466B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1558859A FR3041466B1 (fr) 2015-09-21 2015-09-21 Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant
CN201610102941.5A CN106548808B (zh) 2015-09-21 2016-02-24 用于eeprom类型的存储器器件的故障控制
CN201620139760.5U CN205406096U (zh) 2015-09-21 2016-02-24 电可擦除可编程只读存储器类型的器件
US15/053,989 US9472307B1 (en) 2015-09-21 2016-02-25 Malfunction control for an EEPROM type memory device
DE102016104336.2A DE102016104336A1 (de) 2015-09-21 2016-03-09 Verfahren zur Überwachung des Betriebs einer Speichervorrichtung vom Typ EEPROM und entsprechende Vorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1558859A FR3041466B1 (fr) 2015-09-21 2015-09-21 Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant

Publications (2)

Publication Number Publication Date
FR3041466A1 FR3041466A1 (fr) 2017-03-24
FR3041466B1 true FR3041466B1 (fr) 2017-09-08

Family

ID=55361591

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1558859A Expired - Fee Related FR3041466B1 (fr) 2015-09-21 2015-09-21 Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant

Country Status (4)

Country Link
US (1) US9472307B1 (fr)
CN (2) CN106548808B (fr)
DE (1) DE102016104336A1 (fr)
FR (1) FR3041466B1 (fr)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5511183A (en) * 1992-05-12 1996-04-23 Fujitsu Limited Non-volatile memory controlling apparatus and applications of the same to electronic computer peripheral equipments
FR2699755B1 (fr) 1992-12-22 1995-03-10 Sgs Thomson Microelectronics Circuit de démarrage et de sécurité contre les coupures d'alimentation, pour circuit intégré.
US6268764B1 (en) * 2000-02-18 2001-07-31 Microchip Technology Incorporated Bandgap voltage comparator used as a low voltage detection circuit
JP2004062924A (ja) * 2002-07-25 2004-02-26 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその初期化方法
FR2843660B1 (fr) 2002-08-16 2004-09-24 St Microelectronics Sa Circuit por programmable a deux seuils de commutation
US7310760B1 (en) * 2002-12-11 2007-12-18 Chung Sun Apparatus and method for initializing an integrated circuit device and activating a function of the device once an input power supply has reached a threshold voltage
JP4201629B2 (ja) * 2003-03-26 2008-12-24 三洋電機株式会社 誤書込み防止回路および該誤書込み防止回路を含む半導体装置
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
US7295051B2 (en) * 2005-06-15 2007-11-13 Cypress Semiconductor Corp. System and method for monitoring a power supply level
JP5568928B2 (ja) * 2009-09-08 2014-08-13 セイコーエプソン株式会社 記憶装置、基板、液体容器及びシステム
JP2012048770A (ja) * 2010-08-24 2012-03-08 Toshiba Corp 不揮発性半導体記憶装置、及び、メモリシステム
US8817569B2 (en) * 2012-03-19 2014-08-26 Sandisk Technologies Inc. Immunity against temporary and short power drops in non-volatile memory

Also Published As

Publication number Publication date
DE102016104336A1 (de) 2017-03-23
FR3041466A1 (fr) 2017-03-24
CN205406096U (zh) 2016-07-27
CN106548808A (zh) 2017-03-29
CN106548808B (zh) 2021-05-28
US9472307B1 (en) 2016-10-18

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