FR2843660B1 - Circuit por programmable a deux seuils de commutation - Google Patents
Circuit por programmable a deux seuils de commutationInfo
- Publication number
- FR2843660B1 FR2843660B1 FR0210350A FR0210350A FR2843660B1 FR 2843660 B1 FR2843660 B1 FR 2843660B1 FR 0210350 A FR0210350 A FR 0210350A FR 0210350 A FR0210350 A FR 0210350A FR 2843660 B1 FR2843660 B1 FR 2843660B1
- Authority
- FR
- France
- Prior art keywords
- programmable
- por circuit
- switching thresholds
- thresholds
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0210350A FR2843660B1 (fr) | 2002-08-16 | 2002-08-16 | Circuit por programmable a deux seuils de commutation |
US10/641,337 US6897689B2 (en) | 2002-08-16 | 2003-08-14 | Programmable POR circuit with two switching thresholds |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0210350A FR2843660B1 (fr) | 2002-08-16 | 2002-08-16 | Circuit por programmable a deux seuils de commutation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2843660A1 FR2843660A1 (fr) | 2004-02-20 |
FR2843660B1 true FR2843660B1 (fr) | 2004-09-24 |
Family
ID=30776020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0210350A Expired - Fee Related FR2843660B1 (fr) | 2002-08-16 | 2002-08-16 | Circuit por programmable a deux seuils de commutation |
Country Status (2)
Country | Link |
---|---|
US (1) | US6897689B2 (fr) |
FR (1) | FR2843660B1 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8134402B1 (en) * | 2004-02-09 | 2012-03-13 | National Semiconductor Corporation | Apparatus and method for powering up with hysteresis inactive |
KR100650816B1 (ko) * | 2004-02-19 | 2006-11-27 | 주식회사 하이닉스반도체 | 내부 회로 보호 장치 |
US7312646B2 (en) * | 2005-05-13 | 2007-12-25 | Packet Digital | Method and apparatus for controlling switching transients |
US20070024332A1 (en) * | 2005-07-28 | 2007-02-01 | Standard Microsystems Corporation | All MOS power-on-reset circuit |
US7804254B2 (en) * | 2006-04-19 | 2010-09-28 | Monolithic Power Systems, Inc. | Method and circuit for short-circuit and over-current protection in a discharge lamp system |
FR2904464A1 (fr) * | 2006-07-27 | 2008-02-01 | St Microelectronics Sa | Circuit eeprom de retention de charges pour mesure temporelle |
CN101601097B (zh) * | 2006-07-27 | 2012-10-17 | 意法半导体有限公司 | 用于进行时间测量的电荷保持电路 |
FR2904463A1 (fr) * | 2006-07-27 | 2008-02-01 | St Microelectronics Sa | Programmation d'un circuit de retention de charges pour mesure temporelle |
FR2926400A1 (fr) | 2008-01-11 | 2009-07-17 | St Microelectronics Rousset | Cellule eeprom a perte de charges |
KR100937948B1 (ko) * | 2008-06-04 | 2010-01-21 | 주식회사 하이닉스반도체 | 파워 업 신호 생성회로와 생성 방법 |
KR101022673B1 (ko) * | 2009-06-16 | 2011-03-22 | 주식회사 하이닉스반도체 | 반도체 메모리장치의 파워업회로 |
KR101178560B1 (ko) * | 2010-07-06 | 2012-09-03 | 에스케이하이닉스 주식회사 | 파워업 신호 생성회로 및 생성 방법 |
FR3041466B1 (fr) * | 2015-09-21 | 2017-09-08 | Stmicroelectronics Rousset | Procede de controle du fonctionnement d'un dispositif de memoire de type eeprom, et dispositif correspondant |
US9729138B1 (en) | 2015-12-16 | 2017-08-08 | Adesto Technologies Corporation | Circuits and systems having low power power-on-reset and/or brown out detection |
JP6243990B2 (ja) * | 2016-10-24 | 2017-12-06 | ローム株式会社 | リセット回路 |
JP7075715B2 (ja) * | 2016-10-28 | 2022-05-26 | ラピスセミコンダクタ株式会社 | 半導体装置及びパワーオンリセット信号の生成方法 |
US11146057B2 (en) | 2018-10-25 | 2021-10-12 | Nxp Usa, Inc. | Pad protection in an integrated circuit |
CN111081291B (zh) * | 2020-01-03 | 2023-09-05 | 深圳青铜剑技术有限公司 | 一种非易失性存储器供电电路及其方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04232695A (ja) * | 1990-08-06 | 1992-08-20 | Hughes Aircraft Co | Eepromアナログスイッチ |
FR2744303B1 (fr) * | 1996-01-31 | 1998-03-27 | Sgs Thomson Microelectronics | Dispositif pour neutraliser un circuit electronique lors de sa mise sous tension ou sa mise hors tension |
FR2753579B1 (fr) * | 1996-09-19 | 1998-10-30 | Sgs Thomson Microelectronics | Circuit electronique pourvu d'un dispositif de neutralisation |
US5831460A (en) * | 1997-02-26 | 1998-11-03 | Xilinx, Inc. | Power-on reset circuit with separate power-up and brown-out trigger levels |
US6204703B1 (en) * | 1998-12-21 | 2001-03-20 | Samsung Electronics Co., Ltd. | Power on reset circuit with power noise immunity |
JP3987674B2 (ja) * | 2000-06-01 | 2007-10-10 | 富士通株式会社 | 半導体集積回路 |
-
2002
- 2002-08-16 FR FR0210350A patent/FR2843660B1/fr not_active Expired - Fee Related
-
2003
- 2003-08-14 US US10/641,337 patent/US6897689B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6897689B2 (en) | 2005-05-24 |
FR2843660A1 (fr) | 2004-02-20 |
US20040070430A1 (en) | 2004-04-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20100430 |