JP2008511711A5 - - Google Patents
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- Publication number
- JP2008511711A5 JP2008511711A5 JP2007528898A JP2007528898A JP2008511711A5 JP 2008511711 A5 JP2008511711 A5 JP 2008511711A5 JP 2007528898 A JP2007528898 A JP 2007528898A JP 2007528898 A JP2007528898 A JP 2007528898A JP 2008511711 A5 JP2008511711 A5 JP 2008511711A5
- Authority
- JP
- Japan
- Prior art keywords
- monomer
- thin film
- organosiloxane
- integrated circuit
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000463 material Substances 0.000 claims description 86
- 238000000151 deposition Methods 0.000 claims description 31
- 239000000178 monomer Substances 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 26
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- 125000005375 organosiloxane group Chemical group 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002904 solvent Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910018557 Si O Inorganic materials 0.000 claims description 9
- 230000007062 hydrolysis Effects 0.000 claims description 9
- 238000006460 hydrolysis reaction Methods 0.000 claims description 9
- 125000000962 organic group Chemical group 0.000 claims description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 9
- 239000012777 electrically insulating material Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004132 cross linking Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000009477 glass transition Effects 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- -1 methyldichlorosilyl Chemical group 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 230000000379 polymerizing effect Effects 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 8
- 229930195733 hydrocarbon Natural products 0.000 claims 8
- 150000002430 hydrocarbons Chemical group 0.000 claims 8
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- KQHUBKRXHLPMFV-UHFFFAOYSA-N trichloro-[2-[dichloro(methyl)silyl]ethyl]silane Chemical compound C[Si](Cl)(Cl)CC[Si](Cl)(Cl)Cl KQHUBKRXHLPMFV-UHFFFAOYSA-N 0.000 claims 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 1
- 125000004423 acyloxy group Chemical group 0.000 claims 1
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 125000004450 alkenylene group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000002947 alkylene group Chemical group 0.000 claims 1
- 125000004419 alkynylene group Chemical group 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- SMBUCMQSNPMXSS-UHFFFAOYSA-N dichloro-methyl-(2-trimethoxysilylethyl)silane Chemical compound CO[Si](OC)(OC)CC[Si](C)(Cl)Cl SMBUCMQSNPMXSS-UHFFFAOYSA-N 0.000 claims 1
- CUQYKZJZQKOBRN-UHFFFAOYSA-N dimethoxy-methyl-(trimethoxysilylmethyl)silane Chemical compound CO[Si](C)(OC)C[Si](OC)(OC)OC CUQYKZJZQKOBRN-UHFFFAOYSA-N 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- DLNFKXNUGNBIOM-UHFFFAOYSA-N methyl(silylmethyl)silane Chemical compound C[SiH2]C[SiH3] DLNFKXNUGNBIOM-UHFFFAOYSA-N 0.000 claims 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 claims 1
- ABVUXBPCPLBFHM-UHFFFAOYSA-N trichloro-[[dichloro(methyl)silyl]methyl]silane Chemical compound C[Si](Cl)(Cl)C[Si](Cl)(Cl)Cl ABVUXBPCPLBFHM-UHFFFAOYSA-N 0.000 claims 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical group CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000012545 processing Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910010421 TiNx Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000011243 crosslinked material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60555304P | 2004-08-31 | 2004-08-31 | |
| US64430405P | 2005-01-18 | 2005-01-18 | |
| PCT/FI2005/000373 WO2006024693A1 (en) | 2004-08-31 | 2005-08-31 | Novel polyorganosiloxane dielectric materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008511711A JP2008511711A (ja) | 2008-04-17 |
| JP2008511711A5 true JP2008511711A5 (enExample) | 2012-05-17 |
Family
ID=35999735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007528898A Pending JP2008511711A (ja) | 2004-08-31 | 2005-08-31 | 新規ポリオルガノシロキサン誘電体 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7504470B2 (enExample) |
| EP (1) | EP1787319A4 (enExample) |
| JP (1) | JP2008511711A (enExample) |
| KR (1) | KR101222428B1 (enExample) |
| CN (1) | CN101044604B (enExample) |
| WO (1) | WO2006024693A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1891145B1 (en) * | 2005-06-13 | 2017-08-09 | Pibond Oy | Method for producing a polymer for semiconductor optoelectronics comprising polymerizing functionalized silane monomers with bridging hydrocarbon group |
| US20070284687A1 (en) * | 2006-06-13 | 2007-12-13 | Rantala Juha T | Semiconductor optoelectronics devices |
| WO2008071850A2 (en) * | 2006-12-13 | 2008-06-19 | Silecs Oy | Novel nanoparticle containing siloxane polymers |
| TWI434891B (zh) * | 2007-02-22 | 2014-04-21 | Silecs Oy | 積體電路用高矽含量矽氧烷聚合物 |
| JP2008222857A (ja) * | 2007-03-13 | 2008-09-25 | Jsr Corp | 絶縁膜形成用組成物、ならびにシリカ系膜およびその形成方法 |
| TWI452069B (zh) * | 2007-11-06 | 2014-09-11 | Braggone Oy | 用於抗反射性塗層之碳矽烷聚合物組成物 |
| US8318244B2 (en) * | 2008-01-30 | 2012-11-27 | Dow Corning Corporation | Use of glassy silicone-based hard coating as release coatings for printable electronics |
| KR20100126327A (ko) * | 2008-03-26 | 2010-12-01 | 제이에스알 가부시끼가이샤 | 화학 기상 성장법용 재료, 규소 함유 절연막 및 그의 제조 방법 |
| US20110303284A1 (en) * | 2010-06-09 | 2011-12-15 | Miasole | Glass barrier for diode assemblies |
| CN103319204B (zh) * | 2013-06-05 | 2014-06-18 | 中国科学院上海硅酸盐研究所 | 桥联硅氧烷作为陶质文物加固剂的应用及加固方法 |
| US10170297B2 (en) * | 2013-08-22 | 2019-01-01 | Versum Materials Us, Llc | Compositions and methods using same for flowable oxide deposition |
| US9257399B2 (en) | 2013-10-17 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D integrated circuit and methods of forming the same |
| EP3040388B1 (en) | 2014-12-31 | 2017-08-23 | LG Display Co., Ltd. | Touch sensitive device comprising electroactive film, display device comprising the same, and method of manufacturing the electroactive film |
| KR102431597B1 (ko) * | 2014-12-31 | 2022-08-11 | 엘지디스플레이 주식회사 | 전기활성 필름을 포함하는 접촉 감응 소자, 이를 포함하는 표시 장치 및 전기활성 필름의 제조 방법 |
| US10340182B2 (en) * | 2015-11-30 | 2019-07-02 | International Business Machines Corporation | Enhanced via fill material and processing for dual damscene integration |
| US10249489B2 (en) * | 2016-11-02 | 2019-04-02 | Versum Materials Us, Llc | Use of silyl bridged alkyl compounds for dense OSG films |
| CN111793361B (zh) * | 2019-04-02 | 2023-03-24 | 四川大学 | 低介电常数硅橡胶复合薄膜及其制备方法、应用 |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1427050A (fr) * | 1964-01-29 | 1966-02-04 | Dow Corning | Procédé de préparation de polymères siloxanes à partir de silanes |
| US4504549A (en) * | 1983-05-20 | 1985-03-12 | Union Carbide Corporation | Elastomeric silicone finishes applied to substrates and method of preparing same |
| JP2574403B2 (ja) * | 1988-06-13 | 1997-01-22 | 富士通株式会社 | 有機ケイ素重合体及びその製法ならびにそれを使用した半導体装置 |
| DE4006371A1 (de) * | 1990-03-01 | 1991-09-05 | Hoechst Ag | Faserverstaerkte verbundwerkstoffe und verfahren zu ihrer herstellung |
| JPH0570772A (ja) * | 1991-09-11 | 1993-03-23 | Konica Corp | 有機薄膜エレクトロルミネツセンス素子 |
| US5204141A (en) * | 1991-09-18 | 1993-04-20 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources |
| KR940010290B1 (ko) * | 1991-12-24 | 1994-10-22 | 한국과학기술연구원 | 비스실릴메탄 및 그들의 제조방법 |
| KR940010291B1 (ko) * | 1992-01-23 | 1994-10-22 | 한국과학기술연구원 | 비스실릴알칸 및 그들의 제조방법 |
| JP2951524B2 (ja) * | 1993-12-10 | 1999-09-20 | 財団法人韓国科学技術研究院 | トリスシリルメタンの製造方法 |
| JP2511244B2 (ja) * | 1993-12-22 | 1996-06-26 | 財団法人韓国科学技術研究院 | トリス（シリル）アルカンとその製造方法 |
| JP4739473B2 (ja) * | 1999-01-28 | 2011-08-03 | 日立化成工業株式会社 | シリカ系被膜形成用塗布液、シリカ系被膜及びこれを用いた半導体装置 |
| JP3084367B1 (ja) * | 1999-03-17 | 2000-09-04 | キヤノン販売株式会社 | 層間絶縁膜の形成方法及び半導体装置 |
| KR100306574B1 (ko) * | 1999-04-13 | 2001-09-13 | 박호군 | 탈할로겐화수소 반응으로 유기할로겐 화합물에 실란을 결합시키는 방법 |
| US6696538B2 (en) | 1999-07-27 | 2004-02-24 | Lg Chemical Ltd. | Semiconductor interlayer dielectric material and a semiconductor device using the same |
| JP4320855B2 (ja) * | 1999-08-09 | 2009-08-26 | Ｊｓｒ株式会社 | 絶縁膜形成用組成物 |
| US6410151B1 (en) * | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
| US6410150B1 (en) * | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
| US6558747B2 (en) * | 1999-09-29 | 2003-05-06 | Kabushiki Kaisha Toshiba | Method of forming insulating film and process for producing semiconductor device |
| JP4022802B2 (ja) * | 1999-09-29 | 2007-12-19 | Ｊｓｒ株式会社 | 膜形成用組成物、膜の形成方法および絶縁膜 |
| JP4195773B2 (ja) * | 2000-04-10 | 2008-12-10 | Ｊｓｒ株式会社 | 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜 |
| JP2001254052A (ja) * | 2000-03-13 | 2001-09-18 | Jsr Corp | 膜形成用組成物、膜形成用組成物の形成方法およびシリカ系膜 |
| US7128976B2 (en) * | 2000-04-10 | 2006-10-31 | Jsr Corporation | Composition for film formation, method of film formation, and silica-based film |
| JP2001308082A (ja) * | 2000-04-20 | 2001-11-02 | Nec Corp | 液体有機原料の気化方法及び絶縁膜の成長方法 |
| KR100383103B1 (ko) * | 2000-04-28 | 2003-05-12 | 주식회사 엘지화학 | 저유전 절연재료의 제조방법 |
| TWI291728B (en) * | 2000-04-28 | 2007-12-21 | Lg Chem Investment Ltd | A process for preparing insulating material having low dielectric constant |
| JP4368498B2 (ja) * | 2000-05-16 | 2009-11-18 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置、半導体ウェーハおよびこれらの製造方法 |
| JP3705122B2 (ja) * | 2000-05-16 | 2005-10-12 | Ｊｓｒ株式会社 | 有機ケイ素系重合体の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜 |
| US6465368B2 (en) * | 2000-05-16 | 2002-10-15 | Jsr Corporation | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film |
| KR100661944B1 (ko) * | 2000-05-22 | 2006-12-28 | 제이에스알 가부시끼가이샤 | 막 형성용 조성물, 막 형성용 조성물의 제조 방법, 막의형성 방법 및 실리카계 막 |
| US6737809B2 (en) * | 2000-07-31 | 2004-05-18 | Luxim Corporation | Plasma lamp with dielectric waveguide |
| KR100453211B1 (ko) * | 2000-11-01 | 2004-10-15 | 한국과학기술연구원 | 유기 실란의 제조방법 |
| JP2002167438A (ja) * | 2000-11-29 | 2002-06-11 | Jsr Corp | ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料 |
| JP3588603B2 (ja) * | 2000-12-15 | 2004-11-17 | 株式会社東芝 | 絶縁膜の形成方法および半導体装置の製造方法 |
| AU2002244067A1 (en) * | 2001-02-22 | 2002-09-12 | Crompton Corporation | Water repellent textile finishes and method of making |
| JP2002285086A (ja) * | 2001-03-26 | 2002-10-03 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| US7132363B2 (en) * | 2001-03-27 | 2006-11-07 | Advanced Micro Devices, Inc. | Stabilizing fluorine etching of low-k materials |
| JP4513249B2 (ja) * | 2001-09-28 | 2010-07-28 | Ｊｓｒ株式会社 | 銅ダマシン構造の製造方法 |
| EP1298176B1 (en) * | 2001-09-28 | 2007-01-03 | JSR Corporation | Stacked film insulating film and substrate for semiconductor |
| AU2003216067A1 (en) * | 2002-01-17 | 2003-09-02 | Silecs Oy | Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications |
| WO2003066750A1 (en) * | 2002-02-06 | 2003-08-14 | Asahi Kasei Kabushiki Kaisha | Coating compositions for forming insulating thin films |
| JP4424892B2 (ja) * | 2002-08-06 | 2010-03-03 | 旭化成株式会社 | 絶縁性薄膜製造用塗布組成物 |
| TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| KR100506695B1 (ko) | 2003-06-02 | 2005-08-08 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
| JP2005139265A (ja) * | 2003-11-05 | 2005-06-02 | Tokyo Ohka Kogyo Co Ltd | シリカ系被膜形成用塗布液 |
| JP4535280B2 (ja) * | 2004-07-09 | 2010-09-01 | Ｊｓｒ株式会社 | 有機シリカ系膜の形成方法 |
| US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
-
2005
- 2005-08-31 JP JP2007528898A patent/JP2008511711A/ja active Pending
- 2005-08-31 KR KR1020077007080A patent/KR101222428B1/ko not_active Expired - Lifetime
- 2005-08-31 CN CN2005800362552A patent/CN101044604B/zh not_active Expired - Fee Related
- 2005-08-31 WO PCT/FI2005/000373 patent/WO2006024693A1/en not_active Ceased
- 2005-08-31 US US11/215,303 patent/US7504470B2/en active Active
- 2005-08-31 EP EP05777305A patent/EP1787319A4/en not_active Withdrawn
-
2009
- 2009-03-16 US US12/382,419 patent/US20100317179A1/en not_active Abandoned
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