JP2008505482A5 - - Google Patents
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- Publication number
- JP2008505482A5 JP2008505482A5 JP2007519189A JP2007519189A JP2008505482A5 JP 2008505482 A5 JP2008505482 A5 JP 2008505482A5 JP 2007519189 A JP2007519189 A JP 2007519189A JP 2007519189 A JP2007519189 A JP 2007519189A JP 2008505482 A5 JP2008505482 A5 JP 2008505482A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- relaxed
- concentration
- strained
- sige
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 28
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 9
- 239000012212 insulator Substances 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 3
- 230000007547 defect Effects 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910003811 SiGeC Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000002950 deficient Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000009499 grossing Methods 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- -1 hydrogen ions Chemical class 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052845 zircon Inorganic materials 0.000 claims 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/710,255 US6893936B1 (en) | 2004-06-29 | 2004-06-29 | Method of Forming strained SI/SIGE on insulator with silicon germanium buffer |
| PCT/US2005/005085 WO2006011912A1 (en) | 2004-06-29 | 2005-02-16 | Method of forming strained si/sige on insulator with silicon germanium buffer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008505482A JP2008505482A (ja) | 2008-02-21 |
| JP2008505482A5 true JP2008505482A5 (cg-RX-API-DMAC7.html) | 2008-04-03 |
Family
ID=34573464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007519189A Pending JP2008505482A (ja) | 2004-06-29 | 2005-02-16 | シリコン・ゲルマニウム・バッファで絶縁体上に歪みＳｉ／ＳｉＧｅを形成する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6893936B1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1779422A4 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2008505482A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20070032649A (cg-RX-API-DMAC7.html) |
| CN (1) | CN1954421A (cg-RX-API-DMAC7.html) |
| TW (1) | TWI348200B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2006011912A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9618897D0 (en) | 1996-09-10 | 1996-10-23 | Bio Rad Micromeasurements Ltd | Micro defects in silicon wafers |
| FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
| US6717213B2 (en) * | 2001-06-29 | 2004-04-06 | Intel Corporation | Creation of high mobility channels in thin-body SOI devices |
| GB0308182D0 (en) * | 2003-04-09 | 2003-05-14 | Aoti Operating Co Inc | Detection method and apparatus |
| US7259084B2 (en) * | 2003-07-28 | 2007-08-21 | National Chiao-Tung University | Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer |
| FR2861497B1 (fr) * | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
| US7495266B2 (en) * | 2004-06-16 | 2009-02-24 | Massachusetts Institute Of Technology | Strained silicon-on-silicon by wafer bonding and layer transfer |
| DE102004062290A1 (de) * | 2004-12-23 | 2006-07-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips |
| US20070000434A1 (en) * | 2005-06-30 | 2007-01-04 | Accent Optical Technologies, Inc. | Apparatuses and methods for detecting defects in semiconductor workpieces |
| US20070010070A1 (en) * | 2005-07-05 | 2007-01-11 | International Business Machines Corporation | Fabrication of strained semiconductor-on-insulator (ssoi) structures by using strained insulating layers |
| TWI439684B (zh) * | 2005-07-06 | 2014-06-01 | Nanometrics Inc | 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像 |
| TWI391645B (zh) * | 2005-07-06 | 2013-04-01 | Nanometrics Inc | 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光 |
| US20070008526A1 (en) * | 2005-07-08 | 2007-01-11 | Andrzej Buczkowski | Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces |
| FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
| FR2891281B1 (fr) * | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
| DE102005051332B4 (de) * | 2005-10-25 | 2007-08-30 | Infineon Technologies Ag | Halbleitersubstrat, Halbleiterchip, Halbleiterbauteil und Verfahren zur Herstellung eines Halbleiterbauteils |
| FR2893446B1 (fr) * | 2005-11-16 | 2008-02-15 | Soitec Silicon Insulator Techn | TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE |
| US7656049B2 (en) | 2005-12-22 | 2010-02-02 | Micron Technology, Inc. | CMOS device with asymmetric gate strain |
| US20070176119A1 (en) * | 2006-01-30 | 2007-08-02 | Accent Optical Technologies, Inc. | Apparatuses and methods for analyzing semiconductor workpieces |
| US7494856B2 (en) * | 2006-03-30 | 2009-02-24 | Freescale Semiconductor, Inc. | Semiconductor fabrication process using etch stop layer to optimize formation of source/drain stressor |
| DE102006019934B4 (de) | 2006-04-28 | 2009-10-29 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Ausbildung eines Feldeffekttransistors |
| US7897493B2 (en) * | 2006-12-08 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inducement of strain in a semiconductor layer |
| FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
| CN100447950C (zh) * | 2007-01-26 | 2008-12-31 | 厦门大学 | 低位错密度锗硅虚衬底的制备方法 |
| US8101501B2 (en) * | 2007-10-10 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US7524740B1 (en) | 2008-04-24 | 2009-04-28 | International Business Machines Corporation | Localized strain relaxation for strained Si directly on insulator |
| FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
| JP5747401B2 (ja) | 2009-09-04 | 2015-07-15 | 住友化学株式会社 | 半導体基板、電界効果トランジスタ、集積回路、及び半導体基板の製造方法 |
| CN101882624B (zh) | 2010-06-29 | 2011-09-14 | 清华大学 | 在绝缘衬底上形成有高Ge应变层的结构及形成方法 |
| CN102315246B (zh) * | 2010-06-30 | 2013-03-13 | 中国科学院上海硅酸盐研究所 | 一种弛豫SiGe虚拟衬底及其制备方法 |
| RU2014107762A (ru) * | 2011-08-01 | 2015-09-10 | Басф Се | СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА НА ОСНОВЕ Si1-xGex В ПРИСУТСТВИИ ХМП КОМПОЗИЦИИ, ОБЛАДАЮЩЕЙ ЗНАЧЕНИЕМ pH ОТ 3,0 ДО 5,5 |
| CN102427068B (zh) * | 2011-12-02 | 2014-06-18 | 中国科学院上海微系统与信息技术研究所 | 单片集成具有晶格失配的晶体模板及其制作方法 |
| CN103165512A (zh) * | 2011-12-14 | 2013-06-19 | 中国科学院上海微系统与信息技术研究所 | 一种超薄绝缘体上半导体材料及其制备方法 |
| CN103165511B (zh) * | 2011-12-14 | 2015-07-22 | 中国科学院上海微系统与信息技术研究所 | 一种制备goi的方法 |
| TWI457985B (zh) * | 2011-12-22 | 2014-10-21 | Nat Inst Chung Shan Science & Technology | Semiconductor structure with stress absorbing buffer layer and manufacturing method thereof |
| US8518807B1 (en) * | 2012-06-22 | 2013-08-27 | International Business Machines Corporation | Radiation hardened SOI structure and method of making same |
| KR101381056B1 (ko) * | 2012-11-29 | 2014-04-14 | 주식회사 시지트로닉스 | Ⅲ-질화계 에피층이 성장된 반도체 기판 및 그 방법 |
| US9716176B2 (en) * | 2013-11-26 | 2017-07-25 | Samsung Electronics Co., Ltd. | FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same |
| US9343303B2 (en) * | 2014-03-20 | 2016-05-17 | Samsung Electronics Co., Ltd. | Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices |
| WO2016109502A1 (en) * | 2014-12-31 | 2016-07-07 | Sunedison Semiconductor Limited | Preparation of silicon-germanium-on-insulator structures |
| KR102257423B1 (ko) | 2015-01-23 | 2021-05-31 | 삼성전자주식회사 | 반도체 기판 및 이를 포함하는 반도체 장치 |
| US10304722B2 (en) | 2015-06-01 | 2019-05-28 | Globalwafers Co., Ltd. | Method of manufacturing semiconductor-on-insulator |
| CN114000121B (zh) * | 2022-01-05 | 2022-03-15 | 武汉大学 | 一种基于mbe法的应变金刚石生长掺杂方法及外延结构 |
| CN114000120B (zh) * | 2022-01-05 | 2022-03-15 | 武汉大学 | 一种基于cvd法的应变金刚石生长掺杂方法 |
| JP2025168976A (ja) * | 2024-04-30 | 2025-11-12 | 信越半導体株式会社 | ＳｉＧｅ基板の作製方法及びＳｉＧｅ基板 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| US5906951A (en) * | 1997-04-30 | 1999-05-25 | International Business Machines Corporation | Strained Si/SiGe layers on insulator |
| US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
| US6633066B1 (en) * | 2000-01-07 | 2003-10-14 | Samsung Electronics Co., Ltd. | CMOS integrated circuit devices and substrates having unstrained silicon active layers |
| DE60125952T2 (de) * | 2000-08-16 | 2007-08-02 | Massachusetts Institute Of Technology, Cambridge | Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen |
| US6524935B1 (en) | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
| US6603156B2 (en) | 2001-03-31 | 2003-08-05 | International Business Machines Corporation | Strained silicon on insulator structures |
| FR2842349B1 (fr) * | 2002-07-09 | 2005-02-18 | Transfert d'une couche mince a partir d'une plaquette comprenant une couche tampon | |
| US6953736B2 (en) * | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
| FR2844634B1 (fr) * | 2002-09-18 | 2005-05-27 | Soitec Silicon On Insulator | Formation d'une couche utile relaxee a partir d'une plaquette sans couche tampon |
| US6812116B2 (en) * | 2002-12-13 | 2004-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance |
-
2004
- 2004-06-29 US US10/710,255 patent/US6893936B1/en not_active Expired - Fee Related
-
2005
- 2005-02-16 WO PCT/US2005/005085 patent/WO2006011912A1/en not_active Ceased
- 2005-02-16 CN CNA2005800153595A patent/CN1954421A/zh active Pending
- 2005-02-16 EP EP05713741A patent/EP1779422A4/en not_active Withdrawn
- 2005-02-16 KR KR1020067023687A patent/KR20070032649A/ko not_active Ceased
- 2005-02-16 JP JP2007519189A patent/JP2008505482A/ja active Pending
- 2005-06-03 TW TW094118434A patent/TWI348200B/zh not_active IP Right Cessation
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