JP2008503872A5 - - Google Patents

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Publication number
JP2008503872A5
JP2008503872A5 JP2007516538A JP2007516538A JP2008503872A5 JP 2008503872 A5 JP2008503872 A5 JP 2008503872A5 JP 2007516538 A JP2007516538 A JP 2007516538A JP 2007516538 A JP2007516538 A JP 2007516538A JP 2008503872 A5 JP2008503872 A5 JP 2008503872A5
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JP
Japan
Prior art keywords
region
silicon
sti
etching
soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007516538A
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English (en)
Japanese (ja)
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JP5004791B2 (ja
JP2008503872A (ja
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Publication date
Priority claimed from US10/710,060 external-priority patent/US7118986B2/en
Application filed filed Critical
Publication of JP2008503872A publication Critical patent/JP2008503872A/ja
Publication of JP2008503872A5 publication Critical patent/JP2008503872A5/ja
Application granted granted Critical
Publication of JP5004791B2 publication Critical patent/JP5004791B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007516538A 2004-06-16 2005-06-06 Ｓｏｉおよびバルク・シリコン領域を含む半導体デバイス内のｓｔｉ形成 Expired - Fee Related JP5004791B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/710,060 2004-06-16
US10/710,060 US7118986B2 (en) 2004-06-16 2004-06-16 STI formation in semiconductor device including SOI and bulk silicon regions
PCT/US2005/019815 WO2006009613A2 (en) 2004-06-16 2005-06-06 Sti formation in semiconductor device including soi and bulk silicon regions

Publications (3)

Publication Number Publication Date
JP2008503872A JP2008503872A (ja) 2008-02-07
JP2008503872A5 true JP2008503872A5 (enExample) 2008-06-19
JP5004791B2 JP5004791B2 (ja) 2012-08-22

Family

ID=35481177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007516538A Expired - Fee Related JP5004791B2 (ja) 2004-06-16 2005-06-06 Ｓｏｉおよびバルク・シリコン領域を含む半導体デバイス内のｓｔｉ形成

Country Status (6)

Country Link
US (2) US7118986B2 (enExample)
EP (1) EP1782473A4 (enExample)
JP (1) JP5004791B2 (enExample)
CN (1) CN100452409C (enExample)
TW (1) TWI405298B (enExample)
WO (1) WO2006009613A2 (enExample)

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US8014200B2 (en) 2008-04-08 2011-09-06 Zeno Semiconductor, Inc. Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating
USRE47381E1 (en) 2008-09-03 2019-05-07 Zeno Semiconductor, Inc. Forming semiconductor cells with regions of varying conductivity
JP5576400B2 (ja) * 2009-01-29 2014-08-20 インターナショナル・ビジネス・マシーンズ・コーポレーション フラッシュ・メモリ・デバイスおよびその製造方法
US11908899B2 (en) 2009-02-20 2024-02-20 Zeno Semiconductor, Inc. MOSFET and memory cell having improved drain current through back bias application
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US9153309B2 (en) 2010-02-07 2015-10-06 Zeno Semiconductor Inc. Semiconductor memory device having electrically floating body transistor, semiconductor memory device having both volatile and non-volatile functionality and method or operating
US10340276B2 (en) 2010-03-02 2019-07-02 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US9922981B2 (en) 2010-03-02 2018-03-20 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US10461084B2 (en) 2010-03-02 2019-10-29 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US8582359B2 (en) 2010-11-16 2013-11-12 Zeno Semiconductor, Inc. Dual-port semiconductor memory and first-in first-out (FIFO) memory having electrically floating body transistor
US8957458B2 (en) 2011-03-24 2015-02-17 Zeno Semiconductor, Inc. Asymmetric semiconductor memory device having electrically floating body transistor
CN102956818B (zh) * 2011-08-19 2016-06-29 中芯国际集成电路制造(上海)有限公司 相变存储器的制造方法
US9025358B2 (en) 2011-10-13 2015-05-05 Zeno Semiconductor Inc Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
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CN107331416B (zh) 2012-02-16 2020-11-10 芝诺半导体有限公司 包括初级和二级电晶体的存储单元
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