TWI405298B - 在包含soi及矽塊區域的半導體元件中形成sti的方法 - Google Patents
在包含soi及矽塊區域的半導體元件中形成sti的方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
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- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 65
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 20
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
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- 230000003667 anti-reflective effect Effects 0.000 claims 2
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- 239000012212 insulator Substances 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
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Description
本發明大致係有關於淺溝渠隔離層(shallow trench isolations,STI),且更特定係關於在一包括一絕緣層上覆矽層(silicon-on-insulator,SOI)及矽塊區域的半導體元件中形成一STI的方法。
隨著技術日益複雜之際,積體電路(IC)客戶對更具功能性元件的需求也愈高。為了提供具最佳設計的IC,高效能互補金氧半導體(CMOS)元件也被要求需具備諸如增強的動態隨機記憶體(enhanced dynamic random access memory,eDRAM)或無線電波頻率(radio frequency,RF)應用等額外功能。欲提供上述特徵所需面對的挑戰之一是需能在不同條件下將每一特徵最佳化。舉例來說,可在SOI上達成高效能CMOS,但RF及eDRAM則可能需建立在矽塊區域中。
現今製造圖案化SOI(部分為矽塊、部分為SOI)晶圓的技術係將製造「矽塊材的最佳技術」與製造「SOI技術」加以結合在一起。使用這種方式的技術之一為在SOI上集積eDRAM。在此狀況下,該eDRAM陣列區塊係建立在矽塊材上且邏輯電路係建立在該SOI上。另一種使用這種方式的技術是目前新興的在SOI上的65奈米技術(65 nm on SOI technology)。在65奈米階段的基板可包含位在SOI
上的Nfets及在矽塊上的Pfets。此處理技術在混雜取向技術領域(Hybrid Orientation Technology)中被稱為「HOT」。
上述兩種實例的挑戰之一是製造者必須為SOI及矽塊區域兩者隔絕主動擴散(isolation of active diffusions)。用以提供隔絕的習知技術需要兩個單獨的淺溝渠隔離製程:一用於矽塊,另一用於SOI。上述製程相當複雜且不具經濟效益。特別是,對圖案化的SOI及矽塊進行淺溝渠隔絕,其製程上尚需面臨多種挑戰。
第一項挑戰是與STI的蝕刻深度有關。對SOI區域來說,該STI的蝕刻深度是矽的厚度且蝕刻終止在所埋設的絕緣層頂部,通常是在1000Å以下的深度。對矽塊來說,STI的深度要比目前SOI厚度來得深,例如,通常在3500Å或更深的深度以下。當圖案化該SOI時,相對於矽塊所能選擇的STI深度並不多。第一種選擇是使用該SOI STI蝕刻深度,其並無法提供該塊材區域足夠的隔絕效果。第二種選擇是使用塊材STI蝕刻深度,在該SOI區域中其非常難蝕刻。第三種選擇是讓該SOI區域中的STI蝕刻深度等於在該SOI STI製程中的正常深度,並讓矽塊區域深度等於正常塊材之STI深度。但是,此種製程需要額外的光阻層且可能會使STI平坦化過程出現問題。
STI處理在圖案化SOI時的挑戰來自晶圓內一特定製程缺陷,其係因使用佈植氧所致之分離製程(the Separation by Inplantation of Oxygen(SIMOX)process)而產生的。在一圖案化SIMOX製程中,一開始在晶圓塊上創造出氧化
物硬遮罩,遮蔽該晶圓區域使其不會受一高劑量、高能量的氧佈植影響。在形成埋設的氧化物層(BOX)時,透過一高溫氧化過程,該BOX邊緣(亦即,在該SOI-塊邊界之該BOX)會變得比在該受遮蔽的SOI場域中的BOX來得厚。在許多情況下,延著該SOI-塊區域的邊界,該埋設化物會真的穿出該晶圓表面。因為需要實施一氧化物蝕刻製程來移除生長在一SIMOX晶圓上的氧化物,埋設的氧化物層川初晶圓表面的這些區域也會被蝕刻掉而在晶圓表面留下類似草坪(divots)一樣的小塊區域。之後,該晶圓就需要經過塊狀氧化及塊狀氮化矽(SiN)沉積。在該SiN沉積期間,這些孔洞會以氮化物來充填,且如果其並未在STI蝕刻處理時被蝕刻掉,則可在大部分的STI處理中仍然被保持在圖案化晶圓上。一旦STI已被完全充填且平坦化,需從晶圓表面將此塊狀SiN加以剝除。形成在靠近具有SiN插入於其中之表面的草坪,在蝕刻後將不會含有SiN,且將保持沒有此材料一直到下一沉積步驟為止,即,閘極聚矽步驟。因為聚矽可被電性活化(藉由摻雜或轉變成矽化物),以聚矽充填的草坪將會造成元件短路。此問題已在早期的SOI Edram硬體中被發現。因此,圖案化SIMOX晶圓必須併入一種製程,藉以完全移除留存在草坪表面下的殘餘氮化物。
基於前述,亟需一種可解決上述相關製程問題的新製程。
本發明包括用以在一絕緣層上覆矽層(SOI)區域及一矽塊區域中生成或蝕刻淺溝渠隔離層(STI)的方法;及一種以該方法形成的半導體元件。該STI可在該SOI與矽塊區域中被同時蝕刻,其係藉由一STI遮罩蝕刻至一最上方矽層,執行一可在該矽塊區域中達欲求深度並停止在該SOI區域一埋設的氧化絕緣層的計時蝕刻,且蝕刻穿過該SOI區域中該埋設的絕緣層。為此目的所進行之該埋設的絕緣層蝕刻可在複雜度很低的情況下實施,作為一移除應遮罩步驟的一部份。此外,藉由為矽塊及SOI區域選擇相同深度,也可避免在一後續的CMP製程中出現問題。本發明也可用來清潔該SOI與矽塊間可能留有氮化矽殘餘物的邊界區域。
本發明第一態樣係關於一種用以在一包括了SOI區域與一矽塊區域之元件中,形成一矽溝渠隔離層(或淺溝渠隔離層(STI))的方法,包含以下步驟:以一STI遮罩蝕刻至一最上方矽層,執行一可在該矽塊區域中達欲求深度並停止在該SOI區域一埋設的絕緣層的計時蝕刻(timed etch),且蝕刻穿過該SOI區域中該埋設的絕緣層;並沉積一STI材料以生成該STI。
本發明第二態樣係關於一種在一混合了SOI區域及一矽塊區域的元件中蝕刻一矽溝渠隔離層的方法,該方法包含以下步驟:以一STI遮罩蝕刻至最上層矽層;執行一可在矽塊區域蝕刻出欲求深度並停止在該SOI區域中一埋設
的絕緣層上之計時蝕刻步驟;及蝕刻穿過該SOI區域中該埋設的絕緣層。
本發明第三態樣係關於一種包括一SOI區域及一矽塊區域的半導體元件,該半導體元件包含:一矽溝渠隔離層,其深度可延伸至一實質等於一矽層與該SOI區域之一埋設的絕緣層之厚度。
本發明第四態樣係關於一種用以在一包括一SOI區域及一矽塊區域之元件中生成一STI的方法,該方法包含以下步驟:提供一STI遮罩;在該SOI區域及該矽塊區域中同時生成STI。
有以下本發明特定實施例的說明將可更了解本發明上述及其他特徵。
參照附隨的第1圖,其繪示出一已在一矽塊區域14上生成深溝渠12且在沉積該矽溝渠隔離層硬遮罩之前,一典型晶圓10的截面示意圖。晶圓10包括一SOI區域其包括位於一埋設的絕緣層上24之一矽層22。晶圓10上還包括一墊層30(a pad layer 30),例如,氮化矽或二氧化矽層。
在一實施例中,埋設的絕緣層材料是二氧化矽,但也可使用其他材料。為便於顯示,SOI區域20的矽層22厚度約700Å且該SOI區域之埋設的絕緣層24厚度可達1350Å。墊層30的厚度可包括厚約80 Å的二氧化矽(因為比例之故而未顯示)及厚約1200 Å的氮化矽。但是,須知,
本發明的揭示及教示內容並不僅限於這些特定深度或第1圖一開始的結構。
如第2-3圖所示,其提供一STI遮罩。詳言之,如第2圖所示,一硬遮罩層40係沉積在墊層30之上並進入任一孔洞中。硬遮罩層40材料與埋設的絕緣層24具有實質相同的蝕刻特性。在一實施例中,硬遮罩層40包括約1000 Å的正矽酸四乙酯或摻雜硼的矽酸鹽玻璃(BSG)。接下來如第3圖所示,將,硬遮罩層40圖案化並執行一蝕刻42以形成STI遮罩46。蝕刻42延伸穿過硬遮罩層40,及至少一層抗反射塗層(ARC)(未示出)與墊層30之一,並停在最上層的矽層44上,即,矽塊區域14與該SOI區域20之矽層22的最上方表面。
下一步驟,如第4圖所示,執行一計時蝕刻50以在矽塊區域14蝕刻至一欲求深度(D)並停在SOI區域20之埋設的絕緣層22的一最上方表面52。在一實施例中,矽塊區域14中該欲求深度D(因此,後來生成的STI)可延伸至一至少與SOI區域20厚度一樣的深度,亦即,至少等於矽層22與埋設的絕緣層24兩者加起來的深度。依據上述深度,欲求深度可以約為2050Å,亦即,700Å的矽層加上1350Å之埋設的絕緣層24。在一實施例中,計時蝕刻50可以是一反應性離子蝕刻製程,但是,也可以其他蝕刻製程來實施。在任一種情況下,計時蝕刻50係對埋設的絕緣層24材料(即,二氧化矽)具有專一性,且可蝕刻矽層22及矽層22之下任一氮化矽層兩者,因為在SOI生成過程
間,埋設的絕緣層24會跑到表面所致。此步驟也可清除SOI區域20與矽塊區域14間的邊界76上殘存的氮化矽。
參照第5圖,下一步驟包括執行一蝕刻60,使穿過SOI區域20的埋設的絕緣層24。在一較佳實施例中,該蝕刻60係提供以作為蝕刻移除一硬遮罩層40(第3圖)的一部份。蝕刻60可蝕刻硬遮罩層40及暴露出來的埋設的絕緣層24兩者。但是,蝕刻60不會蝕刻任何暴露出來的矽、多晶矽或氮化矽。換言之,該蝕刻配方無法蝕刻任何暴露出來的矽、多晶矽或氮化矽。
參照第6圖,此步驟包括沉積一STI材料70以形成複數個STI 72。如第6-7圖所示,最終製程將包括執行習知高效能CMOS或DRAM研磨技術(第6圖)以移除最上方表面的STI材料70,並執行一剝除墊層30(第6圖)使直達一半導體元件100的步驟,如第7圖所示。半導體元件100包括延伸至一深度的複數個STI 72,該深度等於SOI區域20之矽層22與埋設的絕緣層24兩者的厚度。欲求深度(D)(第4圖)係實質等於SOI區域20之矽層22與埋設的絕緣層24兩者的厚度,STI 72延伸至一實質等於SOI區域20及矽塊區域14之深度。相較於停在SOI區域20之矽層22厚度來說,此蝕刻深度可提供矽塊14更多隔絕保護。
由第7圖知,該等STI 72之至少一者生成在該SOI區域20內;該等STI 72之至少一者生成在該矽塊區域14內;該SOI區域20內生成的該等STI 72之該至少一者遠離該SOI區域20與該矽塊區域14之間的一邊界76;該矽
塊區域14內生成的該等STI 72之該至少一者遠離該SOI區域20與該矽塊區域14之間的該邊界76;且該矽塊區域14內生成的該等STI 72之至少一者配置在該矽塊區域14的一深溝渠12上方。
本發明已藉由各種實施例相係揭示如上,所述實施例僅供闡述發明目的之用,非用以限制本發明範疇。
10‧‧‧晶圓
12‧‧‧深溝渠
14‧‧‧矽塊區域
20‧‧‧絕緣層上覆矽層區域
22‧‧‧矽層
24‧‧‧埋設的絕緣層
30‧‧‧墊層
40‧‧‧硬遮罩層
42、60‧‧‧蝕刻
46‧‧‧STI遮罩
50‧‧‧計時蝕刻
52‧‧‧最上方表面
70‧‧‧STI材料
72‧‧‧STI
76‧‧‧邊界
44‧‧‧矽層
圖示並未依比例繪示,此外,相同元件亦以相同符號表示;其中第1圖繪示出在本發明之前一晶圓的截面示意圖;第2-6圖繪示出本發明生成一STI的方法或蝕刻出一STI之方法的示意圖;第7圖繪示出本發明一半導體元件的截面視圖。
100‧‧‧半導體元件
12‧‧‧深溝渠
14‧‧‧矽塊區域
20‧‧‧絕緣層上覆矽層區域
22‧‧‧矽層
24‧‧‧埋設的絕緣層
70‧‧‧STI材料
72‧‧‧STI
76‧‧‧邊界
Claims (29)
- 一種用以在一元件中生成一淺溝渠隔離層(STI)的方法,該元件包括一絕緣層上覆矽層(SOI)區域及一矽塊區域,該方法至少包含:以一STI遮罩蝕刻至一最上方矽層;執行一計時蝕刻(timed etch),其在該矽塊區域中蝕刻至欲求深度並停止在該SOI區域之一埋設的絕緣層上;蝕刻穿過該SOI區域中該埋設的絕緣層;及沉積一STI材料以生成該STI。
- 如申請專利範圍第1項所述之方法,其中該矽塊區域中的欲求深度是至少等於SOI區域中的一矽層與該埋設的絕緣層之厚度。
- 如申請專利範圍第1項所述之方法,更包含生成該STI遮罩的步驟,其係藉由沉積一硬遮罩層,圖案化及蝕刻以生成該STI遮罩。
- 如申請專利範圍第3項所述之方法,其中該硬遮罩層包括正矽酸四乙酯(TEOS)。
- 如申請專利範圍第3項所述之方法,其中該STI遮 罩蝕刻步驟包括蝕刻穿過該硬遮罩層及穿過至少任一抗反射層(ARC)與一墊層之其中至少一者。
- 如申請專利範圍第1項所述之方法,其中該計時蝕刻步驟包括使用一種對該埋設的絕緣層材料而言具專一性的蝕刻配方。
- 如申請專利範圍第1項所述之方法,其中該計時蝕刻步驟移除該SOI區域之一矽層下的任何氮化矽材料。
- 如申請專利範圍第1項所述之方法,其中該蝕刻埋設的絕緣層的步驟包括移除該STI遮罩。
- 如申請專利範圍第1項所述之方法,其中該蝕刻埋設的絕緣層的步驟包括使用不會蝕刻任一暴露的矽、多晶矽及氮化矽的蝕刻配方。
- 如申請專利範圍第1項所述之方法,更包含研磨以移除一最上方表面上方之STI材料及移除一墊層的步驟。
- 一種用以在一混合的絕緣層上覆矽層(SOI)區域及一矽塊區域的元件中蝕刻一淺溝渠隔離層(STI)的方法,該方法至少包含: 以一STI遮罩蝕刻至最上層矽層;執行一計時蝕刻步驟,其在該矽塊區域蝕刻出欲求深度並停止在該SOI區域中一埋設的絕緣層上;及蝕刻穿過該SOI區域中該埋設的絕緣層。
- 如申請專利範圍第11項所述之方法,其中該矽塊區域中的欲求深度至少是和該SOI區域中一矽層及該埋設的絕緣層之厚度一樣。
- 如申請專利範圍第11項所述之方法,更包含生成該STI遮罩的步驟,其係藉由沉積一硬遮罩層,圖案化及蝕刻以生成該STI遮罩。
- 如申請專利範圍第13項所述之方法,其中該硬遮罩層包括正矽酸四乙酯(TEOS)。
- 如申請專利範圍第13項所述之方法,其中該STI遮罩蝕刻步驟包括蝕刻穿過該硬遮罩層及穿過一抗反射層(ARC)與一墊層之其中至少一者。
- 如申請專利範圍第11項所述之方法,其中蝕刻該埋設的絕緣層的步驟也包括移除該STI遮罩。
- 如申請專利範圍第11項所述之方法,其中該計時蝕刻步驟包括使用一種對該埋設的絕緣層材料而言具專一性的蝕刻配方。
- 如申請專利範圍第11項所述之方法,其中該計時蝕刻步驟包括移除該SOI區域之一矽層下的任何氮化矽材料。
- 如申請專利範圍第11項所述之方法,其中該蝕刻埋設的絕緣層的步驟也包括移除該STI遮罩。
- 如申請專利範圍第11項所述之方法,其中該蝕刻埋設的絕緣層的步驟包括使用不會蝕刻任一暴露的矽、多晶矽及氮化矽的蝕刻配方。
- 如申請專利範圍第11項所述之方法,更包含研磨以移除一最上方表面上方之STI材料及移除一墊層的步驟。
- 一種包括一SOI區域及一矽塊區域的半導體元件,其至少包含:複數個淺溝渠隔離層(STI),該等淺溝渠隔離層之每一者的深度延伸至一實質等於該SOI區域之一矽層與一埋設的絕緣層之厚度, 其中該等STI之至少一者生成在該SOI區域內;其中該等STI之至少一者生成在該矽塊區域內;其中該SOI區域內生成的該等STI之該至少一者遠離該SOI區域與該矽塊區域之間的一邊界;其中該矽塊區域內生成的該等STI之該至少一者遠離該SOI區域與該矽塊區域之間的該邊界;且其中該矽塊區域內生成的該等STI之至少一者配置在該矽塊區域的一深溝渠上方。
- 如申請專利範圍第22項所述之半導體元件,其中該STI延伸至一實質等於該SOI區域及該矽塊區域的深度。
- 如申請專利範圍第22項所述之半導體元件,其中該STI延伸穿過該SOI區域之一矽層及一埋設的絕緣層。
- 一種用以在一包括一SOI區域及一矽塊區域之元件中生成一STI的方法,該方法包含以下步驟:提供一STI遮罩;及同時生成該STI在該SOI區域及該矽塊區域中,其中該生成步驟包括:以該STI遮罩蝕刻至一最上方矽層;執行一計時蝕刻,其在該矽塊區域中蝕刻至欲求深度並停止在該SOI區域之一埋設的絕緣層上; 蝕刻穿過該SOI區域中該埋設的絕緣層;及沉積一STI材料以生成該STI。
- 如申請專利範圍第25項所述之方法,其中該矽塊區域中的欲求深度至少是和該SOI區域中一矽層及該埋設的絕緣層之厚度一樣。
- 如申請專利範圍第25項所述之方法,其中該計時蝕刻步驟包括使用一種對該埋設的絕緣層材料而言具專一性的蝕刻配方。
- 如申請專利範圍第25項所述之方法,其中該計時蝕刻步驟移除該SOI區域之一矽層下的任何氮化矽材料。
- 如申請專利範圍第25項所述之方法,其中該蝕刻埋設的絕緣層的步驟包括使用不會蝕刻任一暴露的矽、多晶矽及氮化矽的蝕刻配方。
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US7118986B2 (en) | 2006-10-10 |
JP2008503872A (ja) | 2008-02-07 |
WO2006009613A2 (en) | 2006-01-26 |
CN100452409C (zh) | 2009-01-14 |
EP1782473A4 (en) | 2010-03-17 |
US7394131B2 (en) | 2008-07-01 |
JP5004791B2 (ja) | 2012-08-22 |
US20060244093A1 (en) | 2006-11-02 |
EP1782473A2 (en) | 2007-05-09 |
WO2006009613A3 (en) | 2006-04-13 |
US20050282392A1 (en) | 2005-12-22 |
TW200601489A (en) | 2006-01-01 |
CN1954435A (zh) | 2007-04-25 |
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