JP2008501228A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008501228A5 JP2008501228A5 JP2007513998A JP2007513998A JP2008501228A5 JP 2008501228 A5 JP2008501228 A5 JP 2008501228A5 JP 2007513998 A JP2007513998 A JP 2007513998A JP 2007513998 A JP2007513998 A JP 2007513998A JP 2008501228 A5 JP2008501228 A5 JP 2008501228A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- intermediate layer
- material constituting
- absorption
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0405883 | 2004-06-01 | ||
| FR0405883A FR2870988B1 (fr) | 2004-06-01 | 2004-06-01 | Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation |
| PCT/FR2005/001262 WO2006000669A2 (fr) | 2004-06-01 | 2005-05-20 | Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008501228A JP2008501228A (ja) | 2008-01-17 |
| JP2008501228A5 true JP2008501228A5 (enExample) | 2012-11-01 |
| JP5335237B2 JP5335237B2 (ja) | 2013-11-06 |
Family
ID=34946629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007513998A Expired - Lifetime JP5335237B2 (ja) | 2004-06-01 | 2005-05-20 | 深さ方向に分離層を含む多層構造物の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7846816B2 (enExample) |
| EP (1) | EP1774579B1 (enExample) |
| JP (1) | JP5335237B2 (enExample) |
| CN (1) | CN100444335C (enExample) |
| AU (1) | AU2005256723B8 (enExample) |
| BR (1) | BRPI0511207A (enExample) |
| FR (1) | FR2870988B1 (enExample) |
| WO (1) | WO2006000669A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8288684B2 (en) * | 2007-05-03 | 2012-10-16 | Electro Scientific Industries, Inc. | Laser micro-machining system with post-scan lens deflection |
| FR2961719B1 (fr) * | 2010-06-24 | 2013-09-27 | Soitec Silicon On Insulator | Procede de traitement d'une piece en un materiau compose |
| FR2965396B1 (fr) * | 2010-09-29 | 2013-02-22 | S O I Tec Silicon On Insulator Tech | Substrat démontable, procédés de fabrication et de démontage d'un tel substrat |
| RU2469433C1 (ru) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты) |
| FR2978600B1 (fr) | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
| FR2980279B1 (fr) * | 2011-09-20 | 2013-10-11 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite a separer par exfoliation |
| US20150053263A1 (en) * | 2012-03-30 | 2015-02-26 | Teijin Limited | Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer |
| FR2991499A1 (fr) * | 2012-05-31 | 2013-12-06 | Commissariat Energie Atomique | Procede et systeme d'obtention d'une tranche semi-conductrice |
| CN106340439A (zh) * | 2015-07-06 | 2017-01-18 | 勤友光电股份有限公司 | 用于镭射剥离处理的晶圆结构 |
| DE102016000051A1 (de) | 2016-01-05 | 2017-07-06 | Siltectra Gmbh | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
| EP3433048B1 (de) | 2016-03-22 | 2022-10-19 | Siltectra GmbH | Kombinierte laserbehandlung eines zu splittenden festkörpers |
| JP7256123B2 (ja) | 2016-12-12 | 2023-04-11 | ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 構成部材を備えた固体層を薄くするための方法 |
| TWI631022B (zh) * | 2016-12-26 | 2018-08-01 | 謙華科技股份有限公司 | 熱印頭模組之製造方法 |
| FR3079657B1 (fr) * | 2018-03-29 | 2024-03-15 | Soitec Silicon On Insulator | Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2506344B2 (fr) * | 1980-02-01 | 1986-07-11 | Commissariat Energie Atomique | Procede de dopage de semi-conducteurs |
| US4415373A (en) * | 1981-11-17 | 1983-11-15 | Allied Corporation | Laser process for gettering defects in semiconductor devices |
| CN1143394C (zh) * | 1996-08-27 | 2004-03-24 | 精工爱普生株式会社 | 剥离方法、溥膜器件的转移方法和薄膜器件 |
| JP2004140380A (ja) * | 1996-08-27 | 2004-05-13 | Seiko Epson Corp | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
| JPH1126733A (ja) | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器 |
| US6306729B1 (en) * | 1997-12-26 | 2001-10-23 | Canon Kabushiki Kaisha | Semiconductor article and method of manufacturing the same |
| JP3697106B2 (ja) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
| JP3911929B2 (ja) * | 1999-10-25 | 2007-05-09 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
| US6300208B1 (en) * | 2000-02-16 | 2001-10-09 | Ultratech Stepper, Inc. | Methods for annealing an integrated device using a radiant energy absorber layer |
| US7211214B2 (en) * | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
| KR20040054811A (ko) | 2001-11-30 | 2004-06-25 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 반도체 디바이스 및 그 제조 방법 |
| US6555439B1 (en) * | 2001-12-18 | 2003-04-29 | Advanced Micro Devices, Inc. | Partial recrystallization of source/drain region before laser thermal annealing |
| US7105425B1 (en) * | 2002-05-16 | 2006-09-12 | Advanced Micro Devices, Inc. | Single electron devices formed by laser thermal annealing |
-
2004
- 2004-06-01 FR FR0405883A patent/FR2870988B1/fr not_active Expired - Fee Related
-
2005
- 2005-05-20 US US11/628,185 patent/US7846816B2/en not_active Expired - Lifetime
- 2005-05-20 WO PCT/FR2005/001262 patent/WO2006000669A2/fr not_active Ceased
- 2005-05-20 CN CNB2005800218458A patent/CN100444335C/zh not_active Expired - Lifetime
- 2005-05-20 JP JP2007513998A patent/JP5335237B2/ja not_active Expired - Lifetime
- 2005-05-20 BR BRPI0511207-9A patent/BRPI0511207A/pt not_active IP Right Cessation
- 2005-05-20 AU AU2005256723A patent/AU2005256723B8/en not_active Ceased
- 2005-05-20 EP EP05773255A patent/EP1774579B1/fr not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103703552B (zh) | 从外延半导体结构的生长基底激光分离外延膜或外延膜层的方法（变体） | |
| JP2009135448A5 (enExample) | ||
| TWI433219B (zh) | Laser processing method | |
| TWI463550B (zh) | Laser processing method and laser processing device | |
| TWI386271B (zh) | Laser processing method | |
| US20170221712A1 (en) | Laser annealing apparatus and laser annealing method | |
| KR20100136450A (ko) | 박막들을 위한 플래시 광 어닐링 | |
| US10644188B2 (en) | Laser epitaxial lift-off GaAs substrate | |
| US9061368B2 (en) | Laser annealing device | |
| AU2005256723B8 (en) | Method for producing a multilayer structure comprising a separating layer | |
| JP6152827B2 (ja) | 半導体基板の製造方法 | |
| Berti et al. | Laser induced epitaxial regrowth of Si1-xGex/Si layers produced by Ge ion implantation | |
| JP5299950B2 (ja) | 半導体製造方法 | |
| JP2012124263A5 (enExample) | ||
| JPH07187890A (ja) | レーザーアニーリング方法 | |
| US7332030B2 (en) | Method of treating a part in order to alter at least one of the properties thereof | |
| JP2014175421A (ja) | ゲッタリング半導体ウエハおよびその製造方法 | |
| KR101162444B1 (ko) | 광속을 이용한 웨이퍼 가열 방법 | |
| JP6138931B2 (ja) | 層を転写するためのプロセス | |
| US20240157473A1 (en) | Formation Of An Ultrathin Mixed Surface Layer By Ultrashort Pulsed Laser Irradiation Of Alternating Metallic Film Stacks | |
| KR101299539B1 (ko) | 프라이밍 및 광 흐름에 의해 플레이트의 층을 가열하는 방법 및 장치 | |
| CN110578168A (zh) | 吸除层的形成方法及硅晶圆 | |
| DE112012003114T5 (de) | Verfahren und Vorrichtung zum Herstellen einer Schicht in Halbleitermaterial | |
| JP5307093B2 (ja) | 半導体デバイスの製造方法 | |
| JP2013541197A (ja) | 特定波長の光束を用いて基板を処理する方法および対応する基板 |