FR2870988B1 - Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation - Google Patents

Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation

Info

Publication number
FR2870988B1
FR2870988B1 FR0405883A FR0405883A FR2870988B1 FR 2870988 B1 FR2870988 B1 FR 2870988B1 FR 0405883 A FR0405883 A FR 0405883A FR 0405883 A FR0405883 A FR 0405883A FR 2870988 B1 FR2870988 B1 FR 2870988B1
Authority
FR
France
Prior art keywords
depth
making
layer
layer structure
separation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0405883A
Other languages
English (en)
French (fr)
Other versions
FR2870988A1 (fr
Inventor
Michel Bruel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0405883A priority Critical patent/FR2870988B1/fr
Application filed by Individual filed Critical Individual
Priority to EP05773255A priority patent/EP1774579B1/fr
Priority to US11/628,185 priority patent/US7846816B2/en
Priority to AU2005256723A priority patent/AU2005256723B8/en
Priority to PCT/FR2005/001262 priority patent/WO2006000669A2/fr
Priority to BRPI0511207-9A priority patent/BRPI0511207A/pt
Priority to JP2007513998A priority patent/JP5335237B2/ja
Priority to CNB2005800218458A priority patent/CN100444335C/zh
Publication of FR2870988A1 publication Critical patent/FR2870988A1/fr
Application granted granted Critical
Publication of FR2870988B1 publication Critical patent/FR2870988B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
FR0405883A 2004-06-01 2004-06-01 Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation Expired - Fee Related FR2870988B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0405883A FR2870988B1 (fr) 2004-06-01 2004-06-01 Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
US11/628,185 US7846816B2 (en) 2004-06-01 2005-05-20 Method for producing a multilayer structure comprising a separating layer
AU2005256723A AU2005256723B8 (en) 2004-06-01 2005-05-20 Method for producing a multilayer structure comprising a separating layer
PCT/FR2005/001262 WO2006000669A2 (fr) 2004-06-01 2005-05-20 Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation.
EP05773255A EP1774579B1 (fr) 2004-06-01 2005-05-20 Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation
BRPI0511207-9A BRPI0511207A (pt) 2004-06-01 2005-05-20 processo de realização de uma estrutura multicamadas
JP2007513998A JP5335237B2 (ja) 2004-06-01 2005-05-20 深さ方向に分離層を含む多層構造物の製造方法
CNB2005800218458A CN100444335C (zh) 2004-06-01 2005-05-20 制造包含分离层的多层结构的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0405883A FR2870988B1 (fr) 2004-06-01 2004-06-01 Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation

Publications (2)

Publication Number Publication Date
FR2870988A1 FR2870988A1 (fr) 2005-12-02
FR2870988B1 true FR2870988B1 (fr) 2006-08-11

Family

ID=34946629

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0405883A Expired - Fee Related FR2870988B1 (fr) 2004-06-01 2004-06-01 Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation

Country Status (8)

Country Link
US (1) US7846816B2 (enExample)
EP (1) EP1774579B1 (enExample)
JP (1) JP5335237B2 (enExample)
CN (1) CN100444335C (enExample)
AU (1) AU2005256723B8 (enExample)
BR (1) BRPI0511207A (enExample)
FR (1) FR2870988B1 (enExample)
WO (1) WO2006000669A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288684B2 (en) * 2007-05-03 2012-10-16 Electro Scientific Industries, Inc. Laser micro-machining system with post-scan lens deflection
FR2961719B1 (fr) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator Procede de traitement d'une piece en un materiau compose
FR2965396B1 (fr) * 2010-09-29 2013-02-22 S O I Tec Silicon On Insulator Tech Substrat démontable, procédés de fabrication et de démontage d'un tel substrat
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
FR2980279B1 (fr) * 2011-09-20 2013-10-11 Soitec Silicon On Insulator Procede de fabrication d'une structure composite a separer par exfoliation
US20150053263A1 (en) * 2012-03-30 2015-02-26 Teijin Limited Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer
FR2991499A1 (fr) * 2012-05-31 2013-12-06 Commissariat Energie Atomique Procede et systeme d'obtention d'une tranche semi-conductrice
CN106340439A (zh) * 2015-07-06 2017-01-18 勤友光电股份有限公司 用于镭射剥离处理的晶圆结构
DE102016000051A1 (de) 2016-01-05 2017-07-06 Siltectra Gmbh Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern
EP3433048B1 (de) 2016-03-22 2022-10-19 Siltectra GmbH Kombinierte laserbehandlung eines zu splittenden festkörpers
JP7256123B2 (ja) 2016-12-12 2023-04-11 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構成部材を備えた固体層を薄くするための方法
TWI631022B (zh) * 2016-12-26 2018-08-01 謙華科技股份有限公司 熱印頭模組之製造方法
FR3079657B1 (fr) * 2018-03-29 2024-03-15 Soitec Silicon On Insulator Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2506344B2 (fr) * 1980-02-01 1986-07-11 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
US4415373A (en) * 1981-11-17 1983-11-15 Allied Corporation Laser process for gettering defects in semiconductor devices
CN1143394C (zh) * 1996-08-27 2004-03-24 精工爱普生株式会社 剥离方法、溥膜器件的转移方法和薄膜器件
JP2004140380A (ja) * 1996-08-27 2004-05-13 Seiko Epson Corp 薄膜デバイスの転写方法、及びデバイスの製造方法
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
US6306729B1 (en) * 1997-12-26 2001-10-23 Canon Kabushiki Kaisha Semiconductor article and method of manufacturing the same
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP3911929B2 (ja) * 1999-10-25 2007-05-09 セイコーエプソン株式会社 液晶表示装置の製造方法
US6300208B1 (en) * 2000-02-16 2001-10-09 Ultratech Stepper, Inc. Methods for annealing an integrated device using a radiant energy absorber layer
US7211214B2 (en) * 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
KR20040054811A (ko) 2001-11-30 2004-06-25 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스 및 그 제조 방법
US6555439B1 (en) * 2001-12-18 2003-04-29 Advanced Micro Devices, Inc. Partial recrystallization of source/drain region before laser thermal annealing
US7105425B1 (en) * 2002-05-16 2006-09-12 Advanced Micro Devices, Inc. Single electron devices formed by laser thermal annealing

Also Published As

Publication number Publication date
AU2005256723B2 (en) 2011-02-10
US20090053877A1 (en) 2009-02-26
WO2006000669A2 (fr) 2006-01-05
EP1774579B1 (fr) 2012-05-16
EP1774579A2 (fr) 2007-04-18
FR2870988A1 (fr) 2005-12-02
JP2008501228A (ja) 2008-01-17
AU2005256723B8 (en) 2011-07-28
WO2006000669A3 (fr) 2007-01-25
AU2005256723A1 (en) 2006-01-05
CN1998071A (zh) 2007-07-11
BRPI0511207A (pt) 2007-11-27
JP5335237B2 (ja) 2013-11-06
US7846816B2 (en) 2010-12-07
CN100444335C (zh) 2008-12-17

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Legal Events

Date Code Title Description
TP Transmission of property
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

ST Notification of lapse

Effective date: 20140228