JP5335237B2 - 深さ方向に分離層を含む多層構造物の製造方法 - Google Patents

深さ方向に分離層を含む多層構造物の製造方法 Download PDF

Info

Publication number
JP5335237B2
JP5335237B2 JP2007513998A JP2007513998A JP5335237B2 JP 5335237 B2 JP5335237 B2 JP 5335237B2 JP 2007513998 A JP2007513998 A JP 2007513998A JP 2007513998 A JP2007513998 A JP 2007513998A JP 5335237 B2 JP5335237 B2 JP 5335237B2
Authority
JP
Japan
Prior art keywords
layer
intermediate layer
absorption
material constituting
multilayer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2007513998A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008501228A5 (enExample
JP2008501228A (ja
Inventor
ミッシェル ブリュエル
Original Assignee
エス．オー．アイ．テック シリコン オン インシュレイター テクノロジーズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エス．オー．アイ．テック シリコン オン インシュレイター テクノロジーズ filed Critical エス．オー．アイ．テック シリコン オン インシュレイター テクノロジーズ
Publication of JP2008501228A publication Critical patent/JP2008501228A/ja
Publication of JP2008501228A5 publication Critical patent/JP2008501228A5/ja
Application granted granted Critical
Publication of JP5335237B2 publication Critical patent/JP5335237B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2007513998A 2004-06-01 2005-05-20 深さ方向に分離層を含む多層構造物の製造方法 Expired - Lifetime JP5335237B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0405883A FR2870988B1 (fr) 2004-06-01 2004-06-01 Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
FR0405883 2004-06-01
PCT/FR2005/001262 WO2006000669A2 (fr) 2004-06-01 2005-05-20 Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation.

Publications (3)

Publication Number Publication Date
JP2008501228A JP2008501228A (ja) 2008-01-17
JP2008501228A5 JP2008501228A5 (enExample) 2012-11-01
JP5335237B2 true JP5335237B2 (ja) 2013-11-06

Family

ID=34946629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007513998A Expired - Lifetime JP5335237B2 (ja) 2004-06-01 2005-05-20 深さ方向に分離層を含む多層構造物の製造方法

Country Status (8)

Country Link
US (1) US7846816B2 (enExample)
EP (1) EP1774579B1 (enExample)
JP (1) JP5335237B2 (enExample)
CN (1) CN100444335C (enExample)
AU (1) AU2005256723B8 (enExample)
BR (1) BRPI0511207A (enExample)
FR (1) FR2870988B1 (enExample)
WO (1) WO2006000669A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288684B2 (en) * 2007-05-03 2012-10-16 Electro Scientific Industries, Inc. Laser micro-machining system with post-scan lens deflection
FR2961719B1 (fr) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator Procede de traitement d'une piece en un materiau compose
FR2965396B1 (fr) * 2010-09-29 2013-02-22 S O I Tec Silicon On Insulator Tech Substrat démontable, procédés de fabrication et de démontage d'un tel substrat
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
FR2980279B1 (fr) * 2011-09-20 2013-10-11 Soitec Silicon On Insulator Procede de fabrication d'une structure composite a separer par exfoliation
EP2833391A4 (en) * 2012-03-30 2015-04-22 Teijin Ltd SEMICONDUCTOR LAMINATE AND METHOD FOR THE PRODUCTION THEREOF, METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR ELEMENT, DOTING COMPOSITION, DOPING INJECTION LAYER AND METHOD FOR FORMING A DOPED LAYER
FR2991499A1 (fr) * 2012-05-31 2013-12-06 Commissariat Energie Atomique Procede et systeme d'obtention d'une tranche semi-conductrice
CN106340439A (zh) * 2015-07-06 2017-01-18 勤友光电股份有限公司 用于镭射剥离处理的晶圆结构
DE102016000051A1 (de) 2016-01-05 2017-07-06 Siltectra Gmbh Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern
JP6703617B2 (ja) * 2016-03-22 2020-06-03 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング 分離されるべき固体物の複合レーザ処理
EP3551373A1 (de) 2016-12-12 2019-10-16 Siltectra GmbH Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten
TWI631022B (zh) * 2016-12-26 2018-08-01 謙華科技股份有限公司 熱印頭模組之製造方法
FR3079657B1 (fr) * 2018-03-29 2024-03-15 Soitec Silicon On Insulator Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2506344B2 (fr) * 1980-02-01 1986-07-11 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
US4415373A (en) * 1981-11-17 1983-11-15 Allied Corporation Laser process for gettering defects in semiconductor devices
JP2004140380A (ja) * 1996-08-27 2004-05-13 Seiko Epson Corp 薄膜デバイスの転写方法、及びデバイスの製造方法
EP1655633A3 (en) * 1996-08-27 2006-06-21 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
EP0926709A3 (en) * 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP3911929B2 (ja) * 1999-10-25 2007-05-09 セイコーエプソン株式会社 液晶表示装置の製造方法
US6300208B1 (en) * 2000-02-16 2001-10-09 Ultratech Stepper, Inc. Methods for annealing an integrated device using a radiant energy absorber layer
US7211214B2 (en) * 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
KR20040054811A (ko) * 2001-11-30 2004-06-25 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스 및 그 제조 방법
US6555439B1 (en) * 2001-12-18 2003-04-29 Advanced Micro Devices, Inc. Partial recrystallization of source/drain region before laser thermal annealing
US7105425B1 (en) * 2002-05-16 2006-09-12 Advanced Micro Devices, Inc. Single electron devices formed by laser thermal annealing

Also Published As

Publication number Publication date
AU2005256723B2 (en) 2011-02-10
BRPI0511207A (pt) 2007-11-27
WO2006000669A2 (fr) 2006-01-05
JP2008501228A (ja) 2008-01-17
US7846816B2 (en) 2010-12-07
AU2005256723A1 (en) 2006-01-05
AU2005256723B8 (en) 2011-07-28
CN100444335C (zh) 2008-12-17
EP1774579B1 (fr) 2012-05-16
WO2006000669A3 (fr) 2007-01-25
FR2870988A1 (fr) 2005-12-02
FR2870988B1 (fr) 2006-08-11
US20090053877A1 (en) 2009-02-26
EP1774579A2 (fr) 2007-04-18
CN1998071A (zh) 2007-07-11

Similar Documents

Publication Publication Date Title
JP5335237B2 (ja) 深さ方向に分離層を含む多層構造物の製造方法
US8598051B2 (en) Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US8603902B2 (en) Engineering flat surfaces on materials doped via pulsed laser irradiation
US11482826B2 (en) Optical processing apparatus, optical processing method, and optically-processed product production method
CN104956466A (zh) 用于低温多晶硅结晶的短脉冲光纤激光器
JP2013124206A (ja) ウエハ切断方法および装置
JP7560055B2 (ja) レーザ加工方法、半導体部材製造方法及びレーザ加工装置
JP5517832B2 (ja) レーザアニール装置及びレーザアニール方法
JP5918160B2 (ja) ゲッタリング半導体ウエハおよびその製造方法
JP2008501228A5 (enExample)
CN104203485A (zh) 使用超快激光在划线轮的边缘线部分处制造微缺口的设备和方法
JP2015124115A (ja) 加工装置
US20140057460A1 (en) Methods of thermally processing a substrate
JP4060405B2 (ja) 半導体ウェハの製造方法
CN118055826A (zh) 用于切割基材或制备供劈开的基材的方法和装置
JP2012507878A (ja) プライミングおよび光束によって板状体の層を加熱するための方法および装置
JP2013157449A (ja) 半導体デバイスの製造方法
JP2024089171A (ja) 孔を有する基材の製造方法
JP2001176814A (ja) 薄膜半導体装置の製造方法および装置
Mazur et al. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP2007288159A (ja) 逐次的横方向結晶化法による処理中及び処理後のシリコンフィルムの表面平坦化法
Guk et al. The contribution of the polariton mechanism of the surface microstructuring of silicon by picosecond laser pulses

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080404

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20110117

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20110314

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111206

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111208

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120301

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120319

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120405

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120508

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20120907

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120924

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20121012

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130213

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130218

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130319

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130325

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130408

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130412

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130731

R150 Certificate of patent or registration of utility model

Ref document number: 5335237

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term