JP2008501119A5 - - Google Patents

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Publication number
JP2008501119A5
JP2008501119A5 JP2007515061A JP2007515061A JP2008501119A5 JP 2008501119 A5 JP2008501119 A5 JP 2008501119A5 JP 2007515061 A JP2007515061 A JP 2007515061A JP 2007515061 A JP2007515061 A JP 2007515061A JP 2008501119 A5 JP2008501119 A5 JP 2008501119A5
Authority
JP
Japan
Prior art keywords
semiconductor structure
sensitive element
stress sensitive
stress
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007515061A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008501119A (ja
Filing date
Publication date
Priority claimed from DE102004026145A external-priority patent/DE102004026145A1/de
Application filed filed Critical
Priority claimed from PCT/US2005/010474 external-priority patent/WO2005119775A2/en
Publication of JP2008501119A publication Critical patent/JP2008501119A/ja
Publication of JP2008501119A5 publication Critical patent/JP2008501119A5/ja
Pending legal-status Critical Current

Links

JP2007515061A 2004-05-28 2005-03-29 応力感応素子を有する半導体構造、および半導体構造内の応力を測定するための方法 Pending JP2008501119A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004026145A DE102004026145A1 (de) 2004-05-28 2004-05-28 Halbleiterstruktur mit einem spannungsempfindlichen Element und Verfahren zum Messen einer elastischen Spannung in einer Halbleiterstruktur
US11/058,706 US7311008B2 (en) 2004-05-28 2005-02-15 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
PCT/US2005/010474 WO2005119775A2 (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Publications (2)

Publication Number Publication Date
JP2008501119A JP2008501119A (ja) 2008-01-17
JP2008501119A5 true JP2008501119A5 (enExample) 2008-05-15

Family

ID=34967237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515061A Pending JP2008501119A (ja) 2004-05-28 2005-03-29 応力感応素子を有する半導体構造、および半導体構造内の応力を測定するための方法

Country Status (4)

Country Link
JP (1) JP2008501119A (enExample)
KR (1) KR101139009B1 (enExample)
GB (1) GB2430306B (enExample)
WO (1) WO2005119775A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008042903A2 (en) * 2006-10-03 2008-04-10 Kla-Tencor Technologies Corporation Systems for sensing pressure/shear force
KR102583823B1 (ko) * 2021-02-10 2023-09-26 재단법인대구경북과학기술원 곡률을 가지는 박막의 형성 방법 및 이를 통해 제조된 전자 소자
CN119374768B (zh) * 2024-10-31 2025-10-17 西安微电子技术研究所 基于压力测量胶片的芯片粘接残余应力的测量结构和方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271975A (ja) * 1987-04-28 1988-11-09 Nippon Denso Co Ltd 圧力センサとその製造方法
JP2746326B2 (ja) * 1989-01-10 1998-05-06 株式会社日立製作所 半導体光素子
JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
JPH03276666A (ja) * 1990-03-26 1991-12-06 Mitsubishi Electric Corp 実験用の樹脂封止型半導体装置および樹脂封止によるストレスの評価方法
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
JPH06349919A (ja) * 1993-06-04 1994-12-22 Japan Energy Corp 金属薄膜の応力測定方法
JPH0843227A (ja) * 1994-07-26 1996-02-16 Mitsubishi Heavy Ind Ltd 光導波路型圧力センサ
DE19516256C1 (de) * 1995-04-26 1996-10-02 Fraunhofer Ges Forschung Vorrichtung zur in-situ Messung von mechanischen Spannungen in Schichten
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6441396B1 (en) * 2000-10-24 2002-08-27 International Business Machines Corporation In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
JP2003207398A (ja) * 2002-01-10 2003-07-25 Kobe Steel Ltd 応力分布予測方法及び応力分布シミュレーション装置
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication

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