GB2430306B - Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure - Google Patents

Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Info

Publication number
GB2430306B
GB2430306B GB0624045A GB0624045A GB2430306B GB 2430306 B GB2430306 B GB 2430306B GB 0624045 A GB0624045 A GB 0624045A GB 0624045 A GB0624045 A GB 0624045A GB 2430306 B GB2430306 B GB 2430306B
Authority
GB
United Kingdom
Prior art keywords
semiconductor structure
stress
measuring
sensitive element
stress sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0624045A
Other languages
English (en)
Other versions
GB0624045D0 (en
GB2430306A (en
Inventor
Eckhard Langer
Ehrenfried Zschech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102004026145A external-priority patent/DE102004026145A1/de
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0624045D0 publication Critical patent/GB0624045D0/en
Publication of GB2430306A publication Critical patent/GB2430306A/en
Application granted granted Critical
Publication of GB2430306B publication Critical patent/GB2430306B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
GB0624045A 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure Expired - Fee Related GB2430306B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004026145A DE102004026145A1 (de) 2004-05-28 2004-05-28 Halbleiterstruktur mit einem spannungsempfindlichen Element und Verfahren zum Messen einer elastischen Spannung in einer Halbleiterstruktur
US11/058,706 US7311008B2 (en) 2004-05-28 2005-02-15 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
PCT/US2005/010474 WO2005119775A2 (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Publications (3)

Publication Number Publication Date
GB0624045D0 GB0624045D0 (en) 2007-01-10
GB2430306A GB2430306A (en) 2007-03-21
GB2430306B true GB2430306B (en) 2009-10-21

Family

ID=34967237

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0624045A Expired - Fee Related GB2430306B (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Country Status (4)

Country Link
JP (1) JP2008501119A (enExample)
KR (1) KR101139009B1 (enExample)
GB (1) GB2430306B (enExample)
WO (1) WO2005119775A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008042903A2 (en) * 2006-10-03 2008-04-10 Kla-Tencor Technologies Corporation Systems for sensing pressure/shear force
KR102583823B1 (ko) * 2021-02-10 2023-09-26 재단법인대구경북과학기술원 곡률을 가지는 박막의 형성 방법 및 이를 통해 제조된 전자 소자
CN119374768B (zh) * 2024-10-31 2025-10-17 西安微电子技术研究所 基于压力测量胶片的芯片粘接残余应力的测量结构和方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0378098A2 (en) * 1989-01-10 1990-07-18 Hitachi, Ltd. Semiconductor optical device
US5204540A (en) * 1990-03-26 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
EP0740139A1 (de) * 1995-04-26 1996-10-30 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Vorrichtung zur in-situ Messung von mechanischen Spannungen in Schichten
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US20020190252A1 (en) * 2000-10-24 2002-12-19 Adams Edward D. In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US20030098704A1 (en) * 2001-11-26 2003-05-29 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US20040098216A1 (en) * 2002-11-04 2004-05-20 Jun Ye Method and apparatus for monitoring integrated circuit fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271975A (ja) * 1987-04-28 1988-11-09 Nippon Denso Co Ltd 圧力センサとその製造方法
JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
JPH06349919A (ja) * 1993-06-04 1994-12-22 Japan Energy Corp 金属薄膜の応力測定方法
JPH0843227A (ja) * 1994-07-26 1996-02-16 Mitsubishi Heavy Ind Ltd 光導波路型圧力センサ
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
JP2003207398A (ja) * 2002-01-10 2003-07-25 Kobe Steel Ltd 応力分布予測方法及び応力分布シミュレーション装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0378098A2 (en) * 1989-01-10 1990-07-18 Hitachi, Ltd. Semiconductor optical device
US5204540A (en) * 1990-03-26 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
EP0740139A1 (de) * 1995-04-26 1996-10-30 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Vorrichtung zur in-situ Messung von mechanischen Spannungen in Schichten
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US20020190252A1 (en) * 2000-10-24 2002-12-19 Adams Edward D. In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US20030098704A1 (en) * 2001-11-26 2003-05-29 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US20040098216A1 (en) * 2002-11-04 2004-05-20 Jun Ye Method and apparatus for monitoring integrated circuit fabrication

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHEN X ET AL: "Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition" JOURNAL OF APPLIED PHYSICS, vol. 97, no. 1, 16 December 2004, pages 14913-14913 *
Not yet advised *

Also Published As

Publication number Publication date
GB0624045D0 (en) 2007-01-10
GB2430306A (en) 2007-03-21
WO2005119775A3 (en) 2007-04-12
KR20070028471A (ko) 2007-03-12
KR101139009B1 (ko) 2012-04-25
JP2008501119A (ja) 2008-01-17
WO2005119775A2 (en) 2005-12-15

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20110329