GB2430306A - Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure - Google Patents

Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure Download PDF

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Publication number
GB2430306A
GB2430306A GB0624045A GB0624045A GB2430306A GB 2430306 A GB2430306 A GB 2430306A GB 0624045 A GB0624045 A GB 0624045A GB 0624045 A GB0624045 A GB 0624045A GB 2430306 A GB2430306 A GB 2430306A
Authority
GB
United Kingdom
Prior art keywords
stress
semiconductor structure
sensitive element
property
stress sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0624045A
Other versions
GB2430306B (en
GB0624045D0 (en
Inventor
Eckhard Langer
Ehrenfried Zschech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102004026145A external-priority patent/DE102004026145A1/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0624045D0 publication Critical patent/GB0624045D0/en
Publication of GB2430306A publication Critical patent/GB2430306A/en
Application granted granted Critical
Publication of GB2430306B publication Critical patent/GB2430306B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure (100). Additionally, the semiconductor structure may comprise an electrical element (110). The stress sensitive element and the electrical element comprise portions of a common layer structure (107). Analyzers may be adapted to determine a property of the stress sensitive element being representative of a stress in the semiconductor structure (100) and a property of the electrical element (110). The property of the stress sensitive element maybe determined and the manufacturing process may be modified based on the determined property of the stress sensitive element. The property of the electrical element (110) may be related to the property of the stress sensitive element in order to investigate an influence of stress on the electrical element.

Description

GB 2430306 A continuation (74) Agent and/or Address for Service: Brookes
Batchellor LLP 102-1 08 Clerkenwell Road, LONDON, EC1M 5SA, United Kingdom
GB0624045A 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure Expired - Fee Related GB2430306B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004026145A DE102004026145A1 (en) 2004-05-28 2004-05-28 Semiconductor structure with a voltage sensitive element and method for measuring an elastic stress in a semiconductor structure
US11/058,706 US7311008B2 (en) 2004-05-28 2005-02-15 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
PCT/US2005/010474 WO2005119775A2 (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Publications (3)

Publication Number Publication Date
GB0624045D0 GB0624045D0 (en) 2007-01-10
GB2430306A true GB2430306A (en) 2007-03-21
GB2430306B GB2430306B (en) 2009-10-21

Family

ID=34967237

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0624045A Expired - Fee Related GB2430306B (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Country Status (4)

Country Link
JP (1) JP2008501119A (en)
KR (1) KR101139009B1 (en)
GB (1) GB2430306B (en)
WO (1) WO2005119775A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008042903A2 (en) * 2006-10-03 2008-04-10 Kla-Tencor Technologies Corporation Systems for sensing pressure/shear force
KR102583823B1 (en) * 2021-02-10 2023-09-26 재단법인대구경북과학기술원 Method of forming a thin film with curvature and electronic device manufactured by the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271975A (en) * 1987-04-28 1988-11-09 Nippon Denso Co Ltd Pressure sensor and manufacture thereof
JP2746326B2 (en) * 1989-01-10 1998-05-06 株式会社日立製作所 Semiconductor optical device
JPH03228347A (en) * 1990-02-02 1991-10-09 Hitachi Ltd Method of controlling internal stress of semiconductor element
JPH03276666A (en) * 1990-03-26 1991-12-06 Mitsubishi Electric Corp Resin sealed semiconductor device for experiment and stress evaluation by resin sealing process
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
JPH06349919A (en) * 1993-06-04 1994-12-22 Japan Energy Corp Method of measuring stress in metal thin film
JPH0843227A (en) * 1994-07-26 1996-02-16 Mitsubishi Heavy Ind Ltd Optical waveguide type pressure sensor
DE19516256C1 (en) * 1995-04-26 1996-10-02 Fraunhofer Ges Forschung Device for the in-situ measurement of mechanical stresses in layers
JPH09129528A (en) * 1995-11-02 1997-05-16 Hitachi Ltd Method for manufacturing semiconductor device and its device
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6441396B1 (en) * 2000-10-24 2002-08-27 International Business Machines Corporation In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
JP2003207398A (en) * 2002-01-10 2003-07-25 Kobe Steel Ltd Method for predicting stress distribution and device for simulating stress distribution
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Not yet advised *

Also Published As

Publication number Publication date
GB2430306B (en) 2009-10-21
WO2005119775A3 (en) 2007-04-12
KR20070028471A (en) 2007-03-12
KR101139009B1 (en) 2012-04-25
WO2005119775A2 (en) 2005-12-15
JP2008501119A (en) 2008-01-17
GB0624045D0 (en) 2007-01-10

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20110329