KR101139009B1 - 응력 감응 요소를 포함하는 반도체 구조 및 반도체 구조 내에서의 응력을 측정하는 방법 - Google Patents

응력 감응 요소를 포함하는 반도체 구조 및 반도체 구조 내에서의 응력을 측정하는 방법 Download PDF

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KR101139009B1
KR101139009B1 KR1020067027754A KR20067027754A KR101139009B1 KR 101139009 B1 KR101139009 B1 KR 101139009B1 KR 1020067027754 A KR1020067027754 A KR 1020067027754A KR 20067027754 A KR20067027754 A KR 20067027754A KR 101139009 B1 KR101139009 B1 KR 101139009B1
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South Korea
Prior art keywords
semiconductor structure
stress
light
measuring
sensitive element
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KR1020067027754A
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English (en)
Korean (ko)
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KR20070028471A (ko
Inventor
에크하드 란거
엘렌프리드 쩨크
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글로벌파운드리즈 인크.
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Priority claimed from DE102004026145A external-priority patent/DE102004026145A1/de
Application filed by 글로벌파운드리즈 인크. filed Critical 글로벌파운드리즈 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
KR1020067027754A 2004-05-28 2005-03-29 응력 감응 요소를 포함하는 반도체 구조 및 반도체 구조 내에서의 응력을 측정하는 방법 Expired - Fee Related KR101139009B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102004026145.8 2004-05-28
DE102004026145A DE102004026145A1 (de) 2004-05-28 2004-05-28 Halbleiterstruktur mit einem spannungsempfindlichen Element und Verfahren zum Messen einer elastischen Spannung in einer Halbleiterstruktur
US11/058,706 2005-02-15
US11/058,706 US7311008B2 (en) 2004-05-28 2005-02-15 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
PCT/US2005/010474 WO2005119775A2 (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Publications (2)

Publication Number Publication Date
KR20070028471A KR20070028471A (ko) 2007-03-12
KR101139009B1 true KR101139009B1 (ko) 2012-04-25

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KR1020067027754A Expired - Fee Related KR101139009B1 (ko) 2004-05-28 2005-03-29 응력 감응 요소를 포함하는 반도체 구조 및 반도체 구조 내에서의 응력을 측정하는 방법

Country Status (4)

Country Link
JP (1) JP2008501119A (enExample)
KR (1) KR101139009B1 (enExample)
GB (1) GB2430306B (enExample)
WO (1) WO2005119775A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220115216A (ko) * 2021-02-10 2022-08-17 재단법인대구경북과학기술원 곡률을 가지는 박막의 형성 방법 및 이를 통해 제조된 전자 소자

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008042903A2 (en) * 2006-10-03 2008-04-10 Kla-Tencor Technologies Corporation Systems for sensing pressure/shear force
CN119374768B (zh) * 2024-10-31 2025-10-17 西安微电子技术研究所 基于压力测量胶片的芯片粘接残余应力的测量结构和方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204540A (en) * 1990-03-26 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal

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JPS63271975A (ja) * 1987-04-28 1988-11-09 Nippon Denso Co Ltd 圧力センサとその製造方法
JP2746326B2 (ja) * 1989-01-10 1998-05-06 株式会社日立製作所 半導体光素子
JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
JPH06349919A (ja) * 1993-06-04 1994-12-22 Japan Energy Corp 金属薄膜の応力測定方法
JPH0843227A (ja) * 1994-07-26 1996-02-16 Mitsubishi Heavy Ind Ltd 光導波路型圧力センサ
DE19516256C1 (de) * 1995-04-26 1996-10-02 Fraunhofer Ges Forschung Vorrichtung zur in-situ Messung von mechanischen Spannungen in Schichten
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6441396B1 (en) * 2000-10-24 2002-08-27 International Business Machines Corporation In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
JP2003207398A (ja) * 2002-01-10 2003-07-25 Kobe Steel Ltd 応力分布予測方法及び応力分布シミュレーション装置
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204540A (en) * 1990-03-26 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220115216A (ko) * 2021-02-10 2022-08-17 재단법인대구경북과학기술원 곡률을 가지는 박막의 형성 방법 및 이를 통해 제조된 전자 소자
KR102583823B1 (ko) * 2021-02-10 2023-09-26 재단법인대구경북과학기술원 곡률을 가지는 박막의 형성 방법 및 이를 통해 제조된 전자 소자

Also Published As

Publication number Publication date
GB0624045D0 (en) 2007-01-10
GB2430306A (en) 2007-03-21
WO2005119775A3 (en) 2007-04-12
KR20070028471A (ko) 2007-03-12
GB2430306B (en) 2009-10-21
JP2008501119A (ja) 2008-01-17
WO2005119775A2 (en) 2005-12-15

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