JP2008501119A - 応力感応素子を有する半導体構造、および半導体構造内の応力を測定するための方法 - Google Patents

応力感応素子を有する半導体構造、および半導体構造内の応力を測定するための方法 Download PDF

Info

Publication number
JP2008501119A
JP2008501119A JP2007515061A JP2007515061A JP2008501119A JP 2008501119 A JP2008501119 A JP 2008501119A JP 2007515061 A JP2007515061 A JP 2007515061A JP 2007515061 A JP2007515061 A JP 2007515061A JP 2008501119 A JP2008501119 A JP 2008501119A
Authority
JP
Japan
Prior art keywords
semiconductor structure
stress
sensitive element
stress sensitive
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007515061A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008501119A5 (enExample
Inventor
ランガー エックハルト
チェック エーレンフライド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102004026145A external-priority patent/DE102004026145A1/de
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2008501119A publication Critical patent/JP2008501119A/ja
Publication of JP2008501119A5 publication Critical patent/JP2008501119A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP2007515061A 2004-05-28 2005-03-29 応力感応素子を有する半導体構造、および半導体構造内の応力を測定するための方法 Pending JP2008501119A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004026145A DE102004026145A1 (de) 2004-05-28 2004-05-28 Halbleiterstruktur mit einem spannungsempfindlichen Element und Verfahren zum Messen einer elastischen Spannung in einer Halbleiterstruktur
US11/058,706 US7311008B2 (en) 2004-05-28 2005-02-15 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
PCT/US2005/010474 WO2005119775A2 (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Publications (2)

Publication Number Publication Date
JP2008501119A true JP2008501119A (ja) 2008-01-17
JP2008501119A5 JP2008501119A5 (enExample) 2008-05-15

Family

ID=34967237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515061A Pending JP2008501119A (ja) 2004-05-28 2005-03-29 応力感応素子を有する半導体構造、および半導体構造内の応力を測定するための方法

Country Status (4)

Country Link
JP (1) JP2008501119A (enExample)
KR (1) KR101139009B1 (enExample)
GB (1) GB2430306B (enExample)
WO (1) WO2005119775A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506407A (ja) * 2006-10-03 2010-02-25 ケーエルエー−テンカー コーポレイション 圧力、及び／または、せん断力の検知システム

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102583823B1 (ko) * 2021-02-10 2023-09-26 재단법인대구경북과학기술원 곡률을 가지는 박막의 형성 방법 및 이를 통해 제조된 전자 소자
CN119374768B (zh) * 2024-10-31 2025-10-17 西安微电子技术研究所 基于压力测量胶片的芯片粘接残余应力的测量结构和方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271975A (ja) * 1987-04-28 1988-11-09 Nippon Denso Co Ltd 圧力センサとその製造方法
JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
JPH06349919A (ja) * 1993-06-04 1994-12-22 Japan Energy Corp 金属薄膜の応力測定方法
JPH0843227A (ja) * 1994-07-26 1996-02-16 Mitsubishi Heavy Ind Ltd 光導波路型圧力センサ
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
JP2003207398A (ja) * 2002-01-10 2003-07-25 Kobe Steel Ltd 応力分布予測方法及び応力分布シミュレーション装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746326B2 (ja) * 1989-01-10 1998-05-06 株式会社日立製作所 半導体光素子
JPH03276666A (ja) * 1990-03-26 1991-12-06 Mitsubishi Electric Corp 実験用の樹脂封止型半導体装置および樹脂封止によるストレスの評価方法
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
DE19516256C1 (de) * 1995-04-26 1996-10-02 Fraunhofer Ges Forschung Vorrichtung zur in-situ Messung von mechanischen Spannungen in Schichten
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6441396B1 (en) * 2000-10-24 2002-08-27 International Business Machines Corporation In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271975A (ja) * 1987-04-28 1988-11-09 Nippon Denso Co Ltd 圧力センサとその製造方法
JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
JPH06349919A (ja) * 1993-06-04 1994-12-22 Japan Energy Corp 金属薄膜の応力測定方法
JPH0843227A (ja) * 1994-07-26 1996-02-16 Mitsubishi Heavy Ind Ltd 光導波路型圧力センサ
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
JP2003207398A (ja) * 2002-01-10 2003-07-25 Kobe Steel Ltd 応力分布予測方法及び応力分布シミュレーション装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506407A (ja) * 2006-10-03 2010-02-25 ケーエルエー−テンカー コーポレイション 圧力、及び／または、せん断力の検知システム

Also Published As

Publication number Publication date
GB0624045D0 (en) 2007-01-10
GB2430306A (en) 2007-03-21
WO2005119775A3 (en) 2007-04-12
KR20070028471A (ko) 2007-03-12
GB2430306B (en) 2009-10-21
KR101139009B1 (ko) 2012-04-25
WO2005119775A2 (en) 2005-12-15

Similar Documents

Publication Publication Date Title
US7311008B2 (en) Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
KR101254161B1 (ko) 주사 간섭계를 사용해서 표면 구조를 분석하는 방법 및 장치
US7838309B1 (en) Measurement and control of strained devices
JP6353891B2 (ja) Ｃｇｓ干渉分光法を用いた処理制御のためにプロセス誘導ウエハ形状を特徴化するシステムおよび方法
JP4847440B2 (ja) ウエハレベルでの光−電子テスト装置および方法
KR101656436B1 (ko) 박막 웨이퍼의 막두께 분포 측정 방법
JP6694503B2 (ja) 温度測定用基板及び温度測定システム
US6600565B1 (en) Real-time evaluation of stress fields and properties in line features formed on substrates
CN101312120B (zh) 半导体集成电路装置的制造方法
JP7271567B2 (ja) 幅広い計量プロセスウインドウを有するプリズム結合応力計
JP5239346B2 (ja) ラマン分光を用いた応力評価方法及び半導体装置の製造方法
KR101139009B1 (ko) 응력 감응 요소를 포함하는 반도체 구조 및 반도체 구조 내에서의 응력을 측정하는 방법
JP7545093B2 (ja) 光集積回路の製造システムおよび製造方法
JP2004198116A (ja) ブラッググレーティング方式の光導波路型センサおよびその製造方法
US7369235B1 (en) Method and system for measuring deep trenches in silicon
KR100497278B1 (ko) 기판에 형성된 라인 특징의 응력장 및 특성을 실시간으로 평가하는 시스템
US7787108B2 (en) Inline stress evaluation in microstructure devices
JP7644395B2 (ja) 光回路の計測システムおよび計測方法
JP7643528B2 (ja) 光特性検査用回路、装置および方法
KR20050084255A (ko) 과도 열 응답을 이용해서 패턴화된 박막 금속 구조의특성을 측정하는 방법
CN116313921B (zh) 晶圆背面残留的监控方法
JP7545094B2 (ja) 光集積回路の製造システムおよび製造方法
JP2005308607A (ja) 分光エリプソメータ
Kumar et al. Light focusing by chirped waveguide grating coupler
KR19990011939A (ko) 반도체장치의 식각공정의 평가방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080331

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080331

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20100421

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20100902

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101104

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110204

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110214

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110304

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110311

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110404

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110411

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110713