JP2022039883A5 - - Google Patents

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Publication number
JP2022039883A5
JP2022039883A5 JP2020177748A JP2020177748A JP2022039883A5 JP 2022039883 A5 JP2022039883 A5 JP 2022039883A5 JP 2020177748 A JP2020177748 A JP 2020177748A JP 2020177748 A JP2020177748 A JP 2020177748A JP 2022039883 A5 JP2022039883 A5 JP 2022039883A5
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JP
Japan
Prior art keywords
integrated circuit
photonic integrated
damage
waveguide
manufacturing
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JP2020177748A
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English (en)
Japanese (ja)
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JP2022039883A (ja
JP7451376B2 (ja
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Priority claimed from US17/006,366 external-priority patent/US11428646B2/en
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Publication of JP2022039883A publication Critical patent/JP2022039883A/ja
Publication of JP2022039883A5 publication Critical patent/JP2022039883A5/ja
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Publication of JP7451376B2 publication Critical patent/JP7451376B2/ja
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JP2020177748A 2020-08-28 2020-10-23 フォトニック回路製造における損失モニタリング Active JP7451376B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/006,366 2020-08-28
US17/006,366 US11428646B2 (en) 2020-08-28 2020-08-28 Loss monitoring in photonic circuit fabrication

Publications (3)

Publication Number Publication Date
JP2022039883A JP2022039883A (ja) 2022-03-10
JP2022039883A5 true JP2022039883A5 (enExample) 2023-10-24
JP7451376B2 JP7451376B2 (ja) 2024-03-18

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ID=73497675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020177748A Active JP7451376B2 (ja) 2020-08-28 2020-10-23 フォトニック回路製造における損失モニタリング

Country Status (6)

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US (1) US11428646B2 (enExample)
EP (1) EP3961276B1 (enExample)
JP (1) JP7451376B2 (enExample)
KR (1) KR102637475B1 (enExample)
CN (1) CN114114539B (enExample)
TW (1) TWI861281B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11428646B2 (en) 2020-08-28 2022-08-30 Openlight Photonics, Inc. Loss monitoring in photonic circuit fabrication
US12181709B2 (en) 2022-03-10 2024-12-31 Ii-Vi Delaware, Inc. Trimming of optical response for tunable photonic devices
US12699300B2 (en) * 2023-02-24 2026-08-04 Advanced Semiconductor Engineering, Inc. Semiconductor devices
CN118330817B (zh) * 2024-06-13 2024-10-15 杭州质禾科技有限公司 一种光芯片及其制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5987196A (en) * 1997-11-06 1999-11-16 Micron Technology, Inc. Semiconductor structure having an optical signal path in a substrate and method for forming the same
AU1799501A (en) * 1999-11-23 2001-06-04 Nanovation Technologies, Inc. Optical mach-zehnder switch having a movable phase shifter
US6647350B1 (en) * 2000-06-02 2003-11-11 Exactus, Inc. Radiometric temperature measurement system
ATE346410T1 (de) * 2000-08-04 2006-12-15 Amberwave Systems Corp Siliziumwafer mit monolithischen optoelektronischen komponenten
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US6723573B2 (en) * 2002-08-16 2004-04-20 Sarnoff Corporation Photonic devices and PICs including sacrificial testing structures and method of making the same
JP4141223B2 (ja) * 2002-10-04 2008-08-27 日本電信電話株式会社 光回路及びその評価装置
US20050016446A1 (en) * 2003-07-23 2005-01-27 Abbott John S. CaF2 lenses with reduced birefringence
US7042657B2 (en) * 2003-08-28 2006-05-09 Board Of Regents The University Of Texas System Filter for selectively processing optical and other signals
JP4457296B2 (ja) * 2004-07-23 2010-04-28 三菱電機株式会社 光遅延回路、集積光素子および集積光素子の製造方法
US20070002924A1 (en) * 2005-06-30 2007-01-04 Hutchinson John M Integrated monitoring and feedback designs for external cavity tunable lasers
JP6206409B2 (ja) * 2012-08-29 2017-10-04 日本電気株式会社 光集積回路、および光集積回路における光デバイスの検査方法
JP2017524965A (ja) * 2014-06-05 2017-08-31 テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド 大規模フォトニック集積回路の多自由度安定化
US9354039B2 (en) * 2014-06-06 2016-05-31 Massachusetts Institute Of Technology Methods, systems, and apparatus for programmable quantum photonic processing
WO2016033192A1 (en) 2014-08-28 2016-03-03 Adelos, Inc. Noise management for optical time delay interferometry
CA3005704C (en) * 2015-11-19 2020-12-01 Nippon Telegraph And Telephone Corporation Silicon optical circuit for detecting flaws in an optical circuit element based on light transmittance characteristics
US10613274B2 (en) * 2016-05-13 2020-04-07 Luxtera, Inc. Method and system for integrated multi-port waveguide photodetectors
US10042131B1 (en) * 2017-04-05 2018-08-07 Xilinx, Inc. Architecture for silicon photonics enabling wafer probe and test
US11131601B2 (en) * 2017-11-30 2021-09-28 Rain Tree Photonics Pte. Ltd. Method for in-line optical testing
US10877300B2 (en) * 2018-04-04 2020-12-29 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US10663282B1 (en) * 2018-07-05 2020-05-26 Lockheed Martin Corporation Fiber-coupled phased array of photonic integrated circuit imagers
US11002763B2 (en) * 2018-08-10 2021-05-11 Globalfoundries U.S. Inc. Probe for pic die with related test assembly and method
US10666353B1 (en) * 2018-11-20 2020-05-26 Juniper Networks, Inc. Normal incidence photodetector with self-test functionality
US11428646B2 (en) 2020-08-28 2022-08-30 Openlight Photonics, Inc. Loss monitoring in photonic circuit fabrication

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