CN114114539B - 光子电路制造中的损耗监测 - Google Patents
光子电路制造中的损耗监测 Download PDFInfo
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- CN114114539B CN114114539B CN202011294845.8A CN202011294845A CN114114539B CN 114114539 B CN114114539 B CN 114114539B CN 202011294845 A CN202011294845 A CN 202011294845A CN 114114539 B CN114114539 B CN 114114539B
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- G01M11/30—Testing of optical devices, constituted by fibre optics or optical waveguides
- G01M11/33—Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter being disposed at one fibre or waveguide end-face, and a light receiver at the other end-face
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/006,366 | 2020-08-28 | ||
| US17/006,366 US11428646B2 (en) | 2020-08-28 | 2020-08-28 | Loss monitoring in photonic circuit fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114114539A CN114114539A (zh) | 2022-03-01 |
| CN114114539B true CN114114539B (zh) | 2023-04-18 |
Family
ID=73497675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011294845.8A Active CN114114539B (zh) | 2020-08-28 | 2020-11-18 | 光子电路制造中的损耗监测 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11428646B2 (enExample) |
| EP (1) | EP3961276B1 (enExample) |
| JP (1) | JP7451376B2 (enExample) |
| KR (1) | KR102637475B1 (enExample) |
| CN (1) | CN114114539B (enExample) |
| TW (1) | TWI861281B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11428646B2 (en) | 2020-08-28 | 2022-08-30 | Openlight Photonics, Inc. | Loss monitoring in photonic circuit fabrication |
| US12181709B2 (en) | 2022-03-10 | 2024-12-31 | Ii-Vi Delaware, Inc. | Trimming of optical response for tunable photonic devices |
| US12699300B2 (en) * | 2023-02-24 | 2026-08-04 | Advanced Semiconductor Engineering, Inc. | Semiconductor devices |
| CN118330817B (zh) * | 2024-06-13 | 2024-10-15 | 杭州质禾科技有限公司 | 一种光芯片及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110678791A (zh) * | 2017-04-05 | 2020-01-10 | 赛灵思公司 | 实现晶圆探测和测试的硅光子器件架构 |
| CN110824332A (zh) * | 2018-08-10 | 2020-02-21 | 格芯公司 | 用于pic管芯的探测器及相关测试组件和方法 |
| CN111211183A (zh) * | 2018-11-20 | 2020-05-29 | 瞻博网络公司 | 具有自测试功能性的正交入射光电探测器 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5987196A (en) * | 1997-11-06 | 1999-11-16 | Micron Technology, Inc. | Semiconductor structure having an optical signal path in a substrate and method for forming the same |
| AU1799501A (en) * | 1999-11-23 | 2001-06-04 | Nanovation Technologies, Inc. | Optical mach-zehnder switch having a movable phase shifter |
| US6647350B1 (en) * | 2000-06-02 | 2003-11-11 | Exactus, Inc. | Radiometric temperature measurement system |
| ATE346410T1 (de) * | 2000-08-04 | 2006-12-15 | Amberwave Systems Corp | Siliziumwafer mit monolithischen optoelektronischen komponenten |
| US6767751B2 (en) * | 2002-05-28 | 2004-07-27 | Silicon Light Machines, Inc. | Integrated driver process flow |
| US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
| US7402897B2 (en) * | 2002-08-08 | 2008-07-22 | Elm Technology Corporation | Vertical system integration |
| US6723573B2 (en) * | 2002-08-16 | 2004-04-20 | Sarnoff Corporation | Photonic devices and PICs including sacrificial testing structures and method of making the same |
| JP4141223B2 (ja) * | 2002-10-04 | 2008-08-27 | 日本電信電話株式会社 | 光回路及びその評価装置 |
| US20050016446A1 (en) * | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
| US7042657B2 (en) * | 2003-08-28 | 2006-05-09 | Board Of Regents The University Of Texas System | Filter for selectively processing optical and other signals |
| JP4457296B2 (ja) * | 2004-07-23 | 2010-04-28 | 三菱電機株式会社 | 光遅延回路、集積光素子および集積光素子の製造方法 |
| US20070002924A1 (en) * | 2005-06-30 | 2007-01-04 | Hutchinson John M | Integrated monitoring and feedback designs for external cavity tunable lasers |
| JP6206409B2 (ja) * | 2012-08-29 | 2017-10-04 | 日本電気株式会社 | 光集積回路、および光集積回路における光デバイスの検査方法 |
| JP2017524965A (ja) * | 2014-06-05 | 2017-08-31 | テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド | 大規模フォトニック集積回路の多自由度安定化 |
| US9354039B2 (en) * | 2014-06-06 | 2016-05-31 | Massachusetts Institute Of Technology | Methods, systems, and apparatus for programmable quantum photonic processing |
| WO2016033192A1 (en) | 2014-08-28 | 2016-03-03 | Adelos, Inc. | Noise management for optical time delay interferometry |
| CA3005704C (en) * | 2015-11-19 | 2020-12-01 | Nippon Telegraph And Telephone Corporation | Silicon optical circuit for detecting flaws in an optical circuit element based on light transmittance characteristics |
| US10613274B2 (en) * | 2016-05-13 | 2020-04-07 | Luxtera, Inc. | Method and system for integrated multi-port waveguide photodetectors |
| US11131601B2 (en) * | 2017-11-30 | 2021-09-28 | Rain Tree Photonics Pte. Ltd. | Method for in-line optical testing |
| US10877300B2 (en) * | 2018-04-04 | 2020-12-29 | The Research Foundation For The State University Of New York | Heterogeneous structure on an integrated photonics platform |
| US10663282B1 (en) * | 2018-07-05 | 2020-05-26 | Lockheed Martin Corporation | Fiber-coupled phased array of photonic integrated circuit imagers |
| US11428646B2 (en) | 2020-08-28 | 2022-08-30 | Openlight Photonics, Inc. | Loss monitoring in photonic circuit fabrication |
-
2020
- 2020-08-28 US US17/006,366 patent/US11428646B2/en active Active
- 2020-10-23 JP JP2020177748A patent/JP7451376B2/ja active Active
- 2020-11-12 TW TW109139472A patent/TWI861281B/zh active
- 2020-11-18 CN CN202011294845.8A patent/CN114114539B/zh active Active
- 2020-11-18 KR KR1020200154837A patent/KR102637475B1/ko active Active
- 2020-11-19 EP EP20208734.2A patent/EP3961276B1/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110678791A (zh) * | 2017-04-05 | 2020-01-10 | 赛灵思公司 | 实现晶圆探测和测试的硅光子器件架构 |
| CN110824332A (zh) * | 2018-08-10 | 2020-02-21 | 格芯公司 | 用于pic管芯的探测器及相关测试组件和方法 |
| CN111211183A (zh) * | 2018-11-20 | 2020-05-29 | 瞻博网络公司 | 具有自测试功能性的正交入射光电探测器 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114114539A (zh) | 2022-03-01 |
| KR20220029276A (ko) | 2022-03-08 |
| EP3961276A1 (en) | 2022-03-02 |
| TW202214997A (zh) | 2022-04-16 |
| JP2022039883A (ja) | 2022-03-10 |
| KR102637475B1 (ko) | 2024-02-19 |
| JP7451376B2 (ja) | 2024-03-18 |
| TWI861281B (zh) | 2024-11-11 |
| US20220065798A1 (en) | 2022-03-03 |
| EP3961276C0 (en) | 2025-04-16 |
| EP3961276B1 (en) | 2025-04-16 |
| US11428646B2 (en) | 2022-08-30 |
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