JP2008300351A - プラズマベースのｅｕｖ放射線源用のガスカーテンを生成する装置 - Google Patents

プラズマベースのｅｕｖ放射線源用のガスカーテンを生成する装置 Download PDF

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Publication number
JP2008300351A
JP2008300351A JP2008125983A JP2008125983A JP2008300351A JP 2008300351 A JP2008300351 A JP 2008300351A JP 2008125983 A JP2008125983 A JP 2008125983A JP 2008125983 A JP2008125983 A JP 2008125983A JP 2008300351 A JP2008300351 A JP 2008300351A
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Japan
Prior art keywords
gas
slit nozzle
plasma
radiation
curtain
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Pending
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JP2008125983A
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English (en)
Japanese (ja)
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JP2008300351A5 (enExample
Inventor
Chinh Duc Tran
ドゥク トラン チン
Jesko Brudermann
ブルーダーマン イェスコ
Bjoern Mader
マーダー ビェルン
Gilbert Dornieden
ドルニーデン ギルベルト
Thomas Brauner
ブラウナー トーマス
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Xtreme Technologies GmbH
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Xtreme Technologies GmbH
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Application filed by Xtreme Technologies GmbH filed Critical Xtreme Technologies GmbH
Publication of JP2008300351A publication Critical patent/JP2008300351A/ja
Publication of JP2008300351A5 publication Critical patent/JP2008300351A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Nozzles (AREA)
JP2008125983A 2007-05-16 2008-05-13 プラズマベースのｅｕｖ放射線源用のガスカーテンを生成する装置 Pending JP2008300351A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007023444A DE102007023444B4 (de) 2007-05-16 2007-05-16 Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen

Publications (2)

Publication Number Publication Date
JP2008300351A true JP2008300351A (ja) 2008-12-11
JP2008300351A5 JP2008300351A5 (enExample) 2009-04-23

Family

ID=39868866

Family Applications (1)

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JP2008125983A Pending JP2008300351A (ja) 2007-05-16 2008-05-13 プラズマベースのｅｕｖ放射線源用のガスカーテンを生成する装置

Country Status (4)

Country Link
US (1) US7750327B2 (enExample)
JP (1) JP2008300351A (enExample)
DE (1) DE102007023444B4 (enExample)
NL (1) NL2001585C2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011027717A1 (ja) * 2009-09-01 2011-03-10 株式会社Ihi Ｌｐｐ方式のｅｕｖ光源とその発生方法
US8648536B2 (en) 2009-09-01 2014-02-11 Ihi Corporation Plasma light source
JP2014517980A (ja) * 2011-04-05 2014-07-24 イーティーエイチ・チューリッヒ 液滴供給装置および該液滴供給装置を備える光源
JP2021148820A (ja) * 2020-03-16 2021-09-27 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法
JP2023006547A (ja) * 2021-06-30 2023-01-18 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、及びプログラム

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
NL2004085A (en) * 2009-03-11 2010-09-14 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method.
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
US9753383B2 (en) * 2012-06-22 2017-09-05 Asml Netherlands B.V. Radiation source and lithographic apparatus
DE102012212394A1 (de) * 2012-07-16 2013-05-29 Carl Zeiss Smt Gmbh Abtrennvorrichtung und abtrennverfahren für projektionsbelichtungsanlagen
DE102012213927A1 (de) 2012-08-07 2013-06-06 Carl Zeiss Smt Gmbh Vorrichtung zur Erzeugung eines Gasvorhangs, Gasdüse und EUV-Lithographiesystem damit
KR20140036538A (ko) 2012-09-17 2014-03-26 삼성전자주식회사 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스
US9585236B2 (en) 2013-05-03 2017-02-28 Media Lario Srl Sn vapor EUV LLP source system for EUV lithography
US10101664B2 (en) 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US10217625B2 (en) * 2015-03-11 2019-02-26 Kla-Tencor Corporation Continuous-wave laser-sustained plasma illumination source
US10953493B2 (en) * 2017-07-07 2021-03-23 Arvinmeritor Technology, Llc Gas delivery system
US10631392B2 (en) * 2018-04-30 2020-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. EUV collector contamination prevention
US12158576B2 (en) 2021-05-28 2024-12-03 Kla Corporation Counterflow gas nozzle for contamination mitigation in extreme ultraviolet inspection systems
JP2024005835A (ja) * 2022-06-30 2024-01-17 キヤノン株式会社 光源装置、リソグラフィ装置、及び物品の製造方法

Citations (13)

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Publication number Priority date Publication date Assignee Title
JPS5021911A (enExample) * 1973-06-28 1975-03-08
JPS62268048A (ja) * 1986-05-13 1987-11-20 Nippon Telegr & Teleph Corp <Ntt> プラズマｘ線源のｘ線取り出し装置
JPH01103428A (ja) * 1987-10-09 1989-04-20 Pfaff Ind Gmbh 熱空気溶着装置
JPH05228404A (ja) * 1992-02-21 1993-09-07 Koresawa Tekkosho:Kk 高圧ノズル
WO1999063790A1 (en) * 1998-05-29 1999-12-09 Nikon Corporation Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method
JP2002028537A (ja) * 2000-04-14 2002-01-29 Nippon Steel Corp 液膜生成用スリットノズル
JP2005503657A (ja) * 2001-09-18 2005-02-03 イーユーヴィー リミテッド リアビリティ コーポレーション 光学系をデブリ粒子から保護するガスカーテンを具えた放電源
JP2005268461A (ja) * 2004-03-18 2005-09-29 Komatsu Ltd ジェットノズル
JP2006054270A (ja) * 2004-08-10 2006-02-23 Tokyo Institute Of Technology 極紫外光発生装置
JP2006135286A (ja) * 2004-05-11 2006-05-25 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2006324173A (ja) * 2005-05-20 2006-11-30 Ushio Inc 極端紫外光発生装置の電極部
JP2006329664A (ja) * 2005-05-23 2006-12-07 Ushio Inc 極端紫外光発生装置
JP2007005542A (ja) * 2005-06-23 2007-01-11 Ushio Inc 極端紫外光光源装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
DE10215469B4 (de) 2002-04-05 2005-03-17 Xtreme Technologies Gmbh Anordnung zur Unterdrückung von Teilchenemission bei einer Strahlungserzeugung auf Basis eines heißen Plasmas
JP4115913B2 (ja) 2002-08-23 2008-07-09 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置及び前記装置で使用する微粒子バリヤ
DE102004029354A1 (de) * 2004-05-04 2005-12-01 Linde Ag Verfahren und Vorrichtung zum Kaltgasspritzen
DE102005020521B4 (de) * 2005-04-29 2013-05-02 Xtreme Technologies Gmbh Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas
DE102005048670B3 (de) * 2005-10-07 2007-05-24 Xtreme Technologies Gmbh Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021911A (enExample) * 1973-06-28 1975-03-08
JPS62268048A (ja) * 1986-05-13 1987-11-20 Nippon Telegr & Teleph Corp <Ntt> プラズマｘ線源のｘ線取り出し装置
JPH01103428A (ja) * 1987-10-09 1989-04-20 Pfaff Ind Gmbh 熱空気溶着装置
JPH05228404A (ja) * 1992-02-21 1993-09-07 Koresawa Tekkosho:Kk 高圧ノズル
WO1999063790A1 (en) * 1998-05-29 1999-12-09 Nikon Corporation Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method
JP2002028537A (ja) * 2000-04-14 2002-01-29 Nippon Steel Corp 液膜生成用スリットノズル
JP2005503657A (ja) * 2001-09-18 2005-02-03 イーユーヴィー リミテッド リアビリティ コーポレーション 光学系をデブリ粒子から保護するガスカーテンを具えた放電源
JP2005268461A (ja) * 2004-03-18 2005-09-29 Komatsu Ltd ジェットノズル
JP2006135286A (ja) * 2004-05-11 2006-05-25 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2006054270A (ja) * 2004-08-10 2006-02-23 Tokyo Institute Of Technology 極紫外光発生装置
JP2006324173A (ja) * 2005-05-20 2006-11-30 Ushio Inc 極端紫外光発生装置の電極部
JP2006329664A (ja) * 2005-05-23 2006-12-07 Ushio Inc 極端紫外光発生装置
JP2007005542A (ja) * 2005-06-23 2007-01-11 Ushio Inc 極端紫外光光源装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011027717A1 (ja) * 2009-09-01 2011-03-10 株式会社Ihi Ｌｐｐ方式のｅｕｖ光源とその発生方法
CN102484937A (zh) * 2009-09-01 2012-05-30 株式会社Ihi Lpp方式的euv光源及其产生方法
US8648536B2 (en) 2009-09-01 2014-02-11 Ihi Corporation Plasma light source
US9000402B2 (en) 2009-09-01 2015-04-07 Ihi Corporation LPP EUV light source and method for producing the same
JP2014517980A (ja) * 2011-04-05 2014-07-24 イーティーエイチ・チューリッヒ 液滴供給装置および該液滴供給装置を備える光源
US9307625B2 (en) 2011-04-05 2016-04-05 Eth Zurich Droplet dispensing device and light source comprising such a droplet dispensing device
JP2021148820A (ja) * 2020-03-16 2021-09-27 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法
JP7467174B2 (ja) 2020-03-16 2024-04-15 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法
JP2023006547A (ja) * 2021-06-30 2023-01-18 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、及びプログラム
JP7637579B2 (ja) 2021-06-30 2025-02-28 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、及びプログラム

Also Published As

Publication number Publication date
US20080283779A1 (en) 2008-11-20
US7750327B2 (en) 2010-07-06
NL2001585C2 (nl) 2011-09-13
DE102007023444A1 (de) 2008-11-20
NL2001585A1 (nl) 2008-11-18
DE102007023444B4 (de) 2009-04-09

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