NL2001585C2 - Inrichting voor het tot stand brengen van een gasgordijn voor op plasma gebaseerde euv-stralingsbronnen. - Google Patents
Inrichting voor het tot stand brengen van een gasgordijn voor op plasma gebaseerde euv-stralingsbronnen. Download PDFInfo
- Publication number
- NL2001585C2 NL2001585C2 NL2001585A NL2001585A NL2001585C2 NL 2001585 C2 NL2001585 C2 NL 2001585C2 NL 2001585 A NL2001585 A NL 2001585A NL 2001585 A NL2001585 A NL 2001585A NL 2001585 C2 NL2001585 C2 NL 2001585C2
- Authority
- NL
- Netherlands
- Prior art keywords
- gas
- spit
- plasma
- radiation
- shaped
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 70
- 239000007789 gas Substances 0.000 claims description 190
- 239000002245 particle Substances 0.000 claims description 24
- 238000009826 distribution Methods 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 238000001914 filtration Methods 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 1
- 241000446313 Lamella Species 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
Landscapes
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Nozzles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007023444A DE102007023444B4 (de) | 2007-05-16 | 2007-05-16 | Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen |
| DE102007023444 | 2007-05-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2001585A1 NL2001585A1 (nl) | 2008-11-18 |
| NL2001585C2 true NL2001585C2 (nl) | 2011-09-13 |
Family
ID=39868866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2001585A NL2001585C2 (nl) | 2007-05-16 | 2008-05-15 | Inrichting voor het tot stand brengen van een gasgordijn voor op plasma gebaseerde euv-stralingsbronnen. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7750327B2 (enExample) |
| JP (1) | JP2008300351A (enExample) |
| DE (1) | DE102007023444B4 (enExample) |
| NL (1) | NL2001585C2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5559562B2 (ja) * | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
| NL2004085A (en) * | 2009-03-11 | 2010-09-14 | Asml Netherlands Bv | Radiation source, lithographic apparatus, and device manufacturing method. |
| EP2475229A4 (en) | 2009-09-01 | 2015-03-18 | Ihi Corp | PLASMA LIGHT SOURCE |
| JP2011054376A (ja) * | 2009-09-01 | 2011-03-17 | Ihi Corp | Ｌｐｐ方式のｅｕｖ光源とその発生方法 |
| WO2012136343A1 (en) * | 2011-04-05 | 2012-10-11 | Eth Zurich | Droplet dispensing device and light source comprising such a droplet dispensing device |
| US9516730B2 (en) * | 2011-06-08 | 2016-12-06 | Asml Netherlands B.V. | Systems and methods for buffer gas flow stabilization in a laser produced plasma light source |
| NL2010965A (en) * | 2012-06-22 | 2013-12-24 | Asml Netherlands Bv | Radiation source and lithographic apparatus. |
| DE102012212394A1 (de) * | 2012-07-16 | 2013-05-29 | Carl Zeiss Smt Gmbh | Abtrennvorrichtung und abtrennverfahren für projektionsbelichtungsanlagen |
| DE102012213927A1 (de) | 2012-08-07 | 2013-06-06 | Carl Zeiss Smt Gmbh | Vorrichtung zur Erzeugung eines Gasvorhangs, Gasdüse und EUV-Lithographiesystem damit |
| KR20140036538A (ko) | 2012-09-17 | 2014-03-26 | 삼성전자주식회사 | 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스 |
| US9585236B2 (en) | 2013-05-03 | 2017-02-28 | Media Lario Srl | Sn vapor EUV LLP source system for EUV lithography |
| US10101664B2 (en) | 2014-11-01 | 2018-10-16 | Kla-Tencor Corporation | Apparatus and methods for optics protection from debris in plasma-based light source |
| US10217625B2 (en) * | 2015-03-11 | 2019-02-26 | Kla-Tencor Corporation | Continuous-wave laser-sustained plasma illumination source |
| US10953493B2 (en) * | 2017-07-07 | 2021-03-23 | Arvinmeritor Technology, Llc | Gas delivery system |
| US10631392B2 (en) * | 2018-04-30 | 2020-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV collector contamination prevention |
| JP7467174B2 (ja) * | 2020-03-16 | 2024-04-15 | ギガフォトン株式会社 | チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法 |
| US12158576B2 (en) | 2021-05-28 | 2024-12-03 | Kla Corporation | Counterflow gas nozzle for contamination mitigation in extreme ultraviolet inspection systems |
| JP7637579B2 (ja) * | 2021-06-30 | 2025-02-28 | Ｊｓｗアクティナシステム株式会社 | レーザ照射装置、情報処理方法、及びプログラム |
| JP2024005835A (ja) * | 2022-06-30 | 2024-01-17 | キヤノン株式会社 | 光源装置、リソグラフィ装置、及び物品の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030053594A1 (en) * | 2001-09-18 | 2003-03-20 | Fornaciari Neal R. | Discharge source with gas curtain for protecting optics from particles |
| US20060243927A1 (en) * | 2005-04-29 | 2006-11-02 | Tran Duc C | Method and arrangement for the suppression of debris in the generation of short-wavelength radiation based on a plasma |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5238804B2 (enExample) * | 1973-06-28 | 1977-10-01 | ||
| JPH0744020B2 (ja) * | 1986-05-13 | 1995-05-15 | 日本電信電話株式会社 | プラズマｘ線源のｘ線取り出し装置 |
| DE3734137A1 (de) * | 1987-10-09 | 1989-04-20 | Pfaff Ind Masch | Luftfuehrungsvorrichtung fuer eine schweissmaschine zum verarbeiten von kunststoffolien |
| JPH05228404A (ja) * | 1992-02-21 | 1993-09-07 | Koresawa Tekkosho:Kk | 高圧ノズル |
| WO1999063790A1 (en) * | 1998-05-29 | 1999-12-09 | Nikon Corporation | Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method |
| JP3898464B2 (ja) * | 2000-04-14 | 2007-03-28 | 新日本製鐵株式会社 | 液膜生成用スリットノズル |
| JP2003022950A (ja) | 2001-07-05 | 2003-01-24 | Canon Inc | Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置 |
| DE10215469B4 (de) | 2002-04-05 | 2005-03-17 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von Teilchenemission bei einer Strahlungserzeugung auf Basis eines heißen Plasmas |
| TWI229242B (en) | 2002-08-23 | 2005-03-11 | Asml Netherlands Bv | Lithographic projection apparatus and particle barrier for use in said apparatus |
| JP2005268461A (ja) * | 2004-03-18 | 2005-09-29 | Komatsu Ltd | ジェットノズル |
| DE102004029354A1 (de) * | 2004-05-04 | 2005-12-01 | Linde Ag | Verfahren und Vorrichtung zum Kaltgasspritzen |
| US8094288B2 (en) * | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006054270A (ja) * | 2004-08-10 | 2006-02-23 | Tokyo Institute Of Technology | 極紫外光発生装置 |
| JP2006324173A (ja) * | 2005-05-20 | 2006-11-30 | Ushio Inc | 極端紫外光発生装置の電極部 |
| JP2006329664A (ja) * | 2005-05-23 | 2006-12-07 | Ushio Inc | 極端紫外光発生装置 |
| JP2007005542A (ja) * | 2005-06-23 | 2007-01-11 | Ushio Inc | 極端紫外光光源装置 |
| DE102005048670B3 (de) * | 2005-10-07 | 2007-05-24 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle |
-
2007
- 2007-05-16 DE DE102007023444A patent/DE102007023444B4/de active Active
-
2008
- 2008-05-13 JP JP2008125983A patent/JP2008300351A/ja active Pending
- 2008-05-14 US US12/120,536 patent/US7750327B2/en active Active
- 2008-05-15 NL NL2001585A patent/NL2001585C2/nl active Search and Examination
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030053594A1 (en) * | 2001-09-18 | 2003-03-20 | Fornaciari Neal R. | Discharge source with gas curtain for protecting optics from particles |
| US20060243927A1 (en) * | 2005-04-29 | 2006-11-02 | Tran Duc C | Method and arrangement for the suppression of debris in the generation of short-wavelength radiation based on a plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008300351A (ja) | 2008-12-11 |
| NL2001585A1 (nl) | 2008-11-18 |
| US7750327B2 (en) | 2010-07-06 |
| DE102007023444B4 (de) | 2009-04-09 |
| US20080283779A1 (en) | 2008-11-20 |
| DE102007023444A1 (de) | 2008-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| SD | Assignments of patents |
Effective date: 20140214 |