JP2008294027A - 半導体受光素子およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 232
- 230000031700 light absorption Effects 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 26
- 239000011241 protective layer Substances 0.000 claims description 26
- 239000000969 carrier Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000002040 relaxant effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 43
- 239000013078 crystal Substances 0.000 abstract description 21
- 230000006866 deterioration Effects 0.000 abstract description 12
- 238000001312 dry etching Methods 0.000 abstract description 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 15
- 230000005684 electric field Effects 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000002109 crystal growth method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Abstract
【解決手段】n型InP基板1上に、n型InPバッファ層2、アンドープGaInAs光吸収層3、アンドープInP拡散バッファ層4、およびp型InP窓層5からなる半導体結晶を順に成長させた。そして、p型InP窓層5からn型InPバッファ層2まで、選択エッチング性の低いBr系エッチャントによって傾斜型順メサ形状に除去して第一のメサを形成した。そして、p型InP窓層5からアンドープInP拡散バッファ層4の途中までドライエッチングにより精密に除去し、第一のメサより径が小さい第二のメサを形成した。
【選択図】図1
Description
図1〜2は、本発明の実施の形態1に係るメサ型PDを示す断面図である。以下、第一導電型をn型、第二導電型をp型として、図1〜2のメサ型PDの作製方法について説明する。
図3〜4は、本発明の実施の形態2に係るメサ型PDを示す断面図である。図3〜4は、それぞれ、図1〜2において、アンドープInP拡散バッファ層4に代えてアンドープAlInAs拡散バッファ層4aを配置するとともに、アンドープGaInAs光吸収層3とアンドープAlInAs拡散バッファ層4aとの間にアンドープInP保護層9を配置し、さらに、p型InP窓層5上にp型GaInAsコンタクト層10を配置したものである。アンドープInP保護層9は、アンドープGaInAs光吸収層3をエッチングから保護するために設けられたものであり、アンドープAlInAs拡散バッファ層4aとは組成が異なり、アンドープAlInAs拡散バッファ層4aより径が大きく、また、アンドープInP拡散バッファ層4と同様に、アンドープGaInAs光吸収層3よりバンドギャップが大きいものとする。図3〜4においては、図1〜2に比較して、アンドープInP保護層9が設けられることにより、素子端周辺におけるアンドープGaInAs光吸収層3の形状が異なっている。
実施の形態1〜2においては、メサ型PDについて説明したが、PDに限らず、アバランシェ増倍層を追加することにより、メサ型APDを構成してもよい。
実施の形態3においては、メサ型APDについて説明した。しかし、メサ型APDに限らず、疑似プレーナー型APDを構成してもよい。
Claims (15)
- 第1導電型半導体基板と、
前記第1導電型半導体基板上に設けられ、第1導電型層、光吸収層、拡散バッファ層、および第2導電型層をこの順に含んだ半導体層と
を備え、
前記半導体層のうち少なくとも前記光吸収層を含む層には第一のメサが設けられており、
前記半導体層のうち少なくとも前記拡散バッファ層および前記第2導電型層を含む層には前記第一のメサより径が小さい第二のメサが設けられている
半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記拡散バッファ層は、組成変化層からなり、前記光吸収層から離れるにつれてバンドギャップが大きくなる
半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記拡散バッファ層は、複数層からなり、前記光吸収層から離れるにつれてバンドギャップが大きくなる
半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記光吸収層・前記拡散バッファ層間に介在して配置され、前記拡散バッファ層とは組成が異なり、前記拡散バッファ層より径が大きく、前記光吸収層よりバンドギャップが大きい保護層
をさらに備える半導体受光素子。 - 請求項4に記載の半導体受光素子であって、
前記保護層は、組成変化層からなり、前記光吸収層から離れるにつれてバンドギャップが大きくなる
半導体受光素子。 - 請求項4に記載の半導体受光素子であって、
前記保護層は、複数層からなり、前記光吸収層から離れるにつれてバンドギャップが大きくなる
半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記拡散バッファ層は、第2導電型を有し且つキャリア濃度が前記第2導電型層より小さい
半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記拡散バッファ層は、第1導電型を有する
半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記拡散バッファ層は、絶縁型を有する
半導体受光素子。 - 請求項2又は請求項3に記載の半導体受光素子であって、
前記保護層は、第2導電型を有し且つキャリア濃度が前記第2導電型層より小さい
半導体受光素子。 - 請求項2又は請求項3に記載の半導体受光素子であって、
前記保護層は、第1導電型を有する
半導体受光素子。 - 請求項2又は請求項3に記載の半導体受光素子であって、
前記保護層は、絶縁型を有する
半導体受光素子。 - 第1導電型半導体基板を用意する工程と、
第1導電型半導体基板上に、第1導電型層、光吸収層、前記光吸収層への第2導電型キャリアの拡散を緩和するための拡散バッファ層、および第2導電型層をこの順に含んだ半導体層を形成する工程と、
前記半導体層のうち少なくとも前記光吸収層を含む層に第一のメサを形成する第一のメサ形成工程と、
前記第一のメサ形成工程の後に、前記半導体層のうち少なくとも前記拡散バッファ層および前記第2導電型層を含む層に前記第一のメサより径が小さい第二のメサを形成する第二のメサ形成工程と
を備える半導体受光素子の製造方法。 - 第1導電型半導体基板を用意する工程と、
第1導電型半導体基板上に、第1導電型層、光吸収層、拡散バッファ層、および第2導電型層をこの順に含んだ半導体層を形成する工程と、
前記拡散バッファ層および前記第2導電型層において、外周の一部または全部を除去することにより内周を受光部として残す第2導電型層除去工程
を備える半導体受光素子の製造方法。 - 請求項13又は請求項14に記載の半導体受光素子の製造方法であって、
前記第二のメサ形成工程又は前記第2導電型層除去工程の後に、熱処理を行う工程
をさらに備える半導体受光素子の製造方法。
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JP2007135018A JP5025330B2 (ja) | 2007-05-22 | 2007-05-22 | 半導体受光素子およびその製造方法 |
US12/103,280 US7719028B2 (en) | 2007-05-22 | 2008-04-15 | Semiconductor light-receiving device and manufacturing method thereof |
CN2008101079621A CN101312221B (zh) | 2007-05-22 | 2008-05-21 | 半导体受光元件及其制造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011187820A (ja) * | 2010-03-10 | 2011-09-22 | Ntt Electornics Corp | フォトダイオード |
WO2016139970A1 (ja) * | 2015-03-05 | 2016-09-09 | 住友電気工業株式会社 | 半導体積層体および半導体装置 |
WO2018008960A1 (ko) * | 2016-07-05 | 2018-01-11 | 엘지이노텍 주식회사 | 반도체 소자 |
JP2020017664A (ja) * | 2018-07-26 | 2020-01-30 | 株式会社デンソー | 半導体装置 |
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JP4894752B2 (ja) * | 2005-01-28 | 2012-03-14 | 日本電気株式会社 | 半導体受光素子及びその製造方法 |
JP2010135360A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
JP5642593B2 (ja) * | 2010-05-18 | 2014-12-17 | 日本オクラロ株式会社 | 裏面入射型半導体受光素子、光受信モジュール、光トランシーバ |
JP5649219B2 (ja) * | 2011-01-24 | 2015-01-07 | Nttエレクトロニクス株式会社 | 半導体装置 |
CN103887371A (zh) * | 2014-03-24 | 2014-06-25 | 北京工业大学 | 一种InP基面阵器件均匀刻蚀的工艺方法 |
JP6332096B2 (ja) * | 2015-03-23 | 2018-05-30 | 三菱電機株式会社 | 半導体受光素子 |
WO2018212175A1 (ja) * | 2017-05-15 | 2018-11-22 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子および撮像素子 |
GB2590350A (en) * | 2019-11-06 | 2021-06-30 | Integrated Compound Semiconductors Ltd | High reliability MESA photodiode |
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JP2011187820A (ja) * | 2010-03-10 | 2011-09-22 | Ntt Electornics Corp | フォトダイオード |
WO2016139970A1 (ja) * | 2015-03-05 | 2016-09-09 | 住友電気工業株式会社 | 半導体積層体および半導体装置 |
WO2018008960A1 (ko) * | 2016-07-05 | 2018-01-11 | 엘지이노텍 주식회사 | 반도체 소자 |
JP2020017664A (ja) * | 2018-07-26 | 2020-01-30 | 株式会社デンソー | 半導体装置 |
JP7115108B2 (ja) | 2018-07-26 | 2022-08-09 | 株式会社デンソー | 半導体装置 |
Also Published As
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US20080290369A1 (en) | 2008-11-27 |
CN101312221A (zh) | 2008-11-26 |
CN101312221B (zh) | 2010-12-08 |
JP5025330B2 (ja) | 2012-09-12 |
US7719028B2 (en) | 2010-05-18 |
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