JP2008244018A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2008244018A
JP2008244018A JP2007080301A JP2007080301A JP2008244018A JP 2008244018 A JP2008244018 A JP 2008244018A JP 2007080301 A JP2007080301 A JP 2007080301A JP 2007080301 A JP2007080301 A JP 2007080301A JP 2008244018 A JP2008244018 A JP 2008244018A
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JP
Japan
Prior art keywords
chamber
substrate
resistance change
oxide layer
semiconductor device
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Pending
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JP2007080301A
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English (en)
Japanese (ja)
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JP2008244018A5 (enExample
Inventor
Hiroshi Nishioka
浩 西岡
Kouko Suu
紅コウ 鄒
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Ulvac Inc
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Ulvac Inc
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Priority to JP2007080301A priority Critical patent/JP2008244018A/ja
Publication of JP2008244018A publication Critical patent/JP2008244018A/ja
Publication of JP2008244018A5 publication Critical patent/JP2008244018A5/ja
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2007080301A 2007-03-26 2007-03-26 半導体装置の製造方法 Pending JP2008244018A (ja)

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JP2007080301A JP2008244018A (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

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JP2007080301A JP2008244018A (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

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JP2008244018A true JP2008244018A (ja) 2008-10-09
JP2008244018A5 JP2008244018A5 (enExample) 2010-01-21

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114332A (ja) * 2008-11-08 2010-05-20 Japan Science & Technology Agency 抵抗変化型不揮発性メモリー素子
JP2010199104A (ja) * 2009-02-23 2010-09-09 National Institute For Materials Science ノンポーラ型不揮発性メモリー素子
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
WO2012073471A1 (ja) * 2010-12-01 2012-06-07 キヤノンアネルバ株式会社 不揮発性記憶素子およびその製造方法
JP2013510438A (ja) * 2009-11-06 2013-03-21 ラムバス・インコーポレーテッド 三次元メモリアレイ積層構造体
KR20150040780A (ko) 2012-08-09 2015-04-15 가부시키가이샤 아루박 성막 방법 및 성막 장치
JP2015074812A (ja) * 2013-10-10 2015-04-20 株式会社アルバック 成膜装置、成膜方法及び金属酸化物薄膜の製造方法
US9103017B2 (en) 2011-11-10 2015-08-11 Joled Inc. Organic display panel, organic display device, organic light emitting device, method of manufacture of these, and thin film formation method
WO2015129413A1 (ja) * 2014-02-25 2015-09-03 東京エレクトロン株式会社 遷移金属膜の酸化処理方法および酸化処理装置
US9269903B2 (en) 2011-06-08 2016-02-23 Ulvac, Inc. Method of manufacturing variable resistance element and apparatus for manufacturing the same
EP3373352A1 (en) * 2014-12-09 2018-09-12 Symetrix Memory LLC Transition metal oxide resistive switching device with doped buffer region

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450501A (en) * 1987-08-21 1989-02-27 Ishizuka Denshi Kk Manufacture of thin film thermistor
JPH0193088A (ja) * 1987-10-02 1989-04-12 Fujitsu Ltd 強誘電薄膜の形成方法
JP2001148377A (ja) * 1999-09-16 2001-05-29 Samsung Electronics Co Ltd 薄膜形成装置及びこれを用いた半導体素子のキャパシタ形成方法
JP2005203463A (ja) * 2004-01-14 2005-07-28 Sharp Corp 不揮発性半導体記憶装置
WO2005101420A1 (en) * 2004-04-16 2005-10-27 Matsushita Electric Industrial Co. Ltd. Thin film memory device having a variable resistance
JP2006219339A (ja) * 2005-02-10 2006-08-24 Nippon Telegr & Teleph Corp <Ntt> ＬｉＮｂＯ３結晶薄膜成膜方法
JP2007042784A (ja) * 2005-08-02 2007-02-15 Nippon Telegr & Teleph Corp <Ntt> 金属酸化物素子及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450501A (en) * 1987-08-21 1989-02-27 Ishizuka Denshi Kk Manufacture of thin film thermistor
JPH0193088A (ja) * 1987-10-02 1989-04-12 Fujitsu Ltd 強誘電薄膜の形成方法
JP2001148377A (ja) * 1999-09-16 2001-05-29 Samsung Electronics Co Ltd 薄膜形成装置及びこれを用いた半導体素子のキャパシタ形成方法
JP2005203463A (ja) * 2004-01-14 2005-07-28 Sharp Corp 不揮発性半導体記憶装置
WO2005101420A1 (en) * 2004-04-16 2005-10-27 Matsushita Electric Industrial Co. Ltd. Thin film memory device having a variable resistance
JP2006219339A (ja) * 2005-02-10 2006-08-24 Nippon Telegr & Teleph Corp <Ntt> ＬｉＮｂＯ３結晶薄膜成膜方法
JP2007042784A (ja) * 2005-08-02 2007-02-15 Nippon Telegr & Teleph Corp <Ntt> 金属酸化物素子及びその製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114332A (ja) * 2008-11-08 2010-05-20 Japan Science & Technology Agency 抵抗変化型不揮発性メモリー素子
JP2010199104A (ja) * 2009-02-23 2010-09-09 National Institute For Materials Science ノンポーラ型不揮発性メモリー素子
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
JP2013510438A (ja) * 2009-11-06 2013-03-21 ラムバス・インコーポレーテッド 三次元メモリアレイ積層構造体
WO2012073471A1 (ja) * 2010-12-01 2012-06-07 キヤノンアネルバ株式会社 不揮発性記憶素子およびその製造方法
KR101492139B1 (ko) 2010-12-01 2015-02-10 캐논 아네르바 가부시키가이샤 비휘발성 메모리 소자 및 그 제조방법
US9391274B2 (en) 2010-12-01 2016-07-12 Canon Anelva Corporation Nonvolatile memory element and method of manufacturing the same
TWI485776B (zh) * 2010-12-01 2015-05-21 佳能安內華股份有限公司 Nonvolatile memory element and manufacturing method thereof
US9269903B2 (en) 2011-06-08 2016-02-23 Ulvac, Inc. Method of manufacturing variable resistance element and apparatus for manufacturing the same
US9103017B2 (en) 2011-11-10 2015-08-11 Joled Inc. Organic display panel, organic display device, organic light emitting device, method of manufacture of these, and thin film formation method
KR20150040780A (ko) 2012-08-09 2015-04-15 가부시키가이샤 아루박 성막 방법 및 성막 장치
JP2015074812A (ja) * 2013-10-10 2015-04-20 株式会社アルバック 成膜装置、成膜方法及び金属酸化物薄膜の製造方法
WO2015129413A1 (ja) * 2014-02-25 2015-09-03 東京エレクトロン株式会社 遷移金属膜の酸化処理方法および酸化処理装置
EP3373352A1 (en) * 2014-12-09 2018-09-12 Symetrix Memory LLC Transition metal oxide resistive switching device with doped buffer region

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