JP2008218440A - ＧａＮ系ＬＥＤ素子および発光装置 - Google Patents

ＧａＮ系ＬＥＤ素子および発光装置 Download PDF

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Publication number
JP2008218440A
JP2008218440A JP2007032965A JP2007032965A JP2008218440A JP 2008218440 A JP2008218440 A JP 2008218440A JP 2007032965 A JP2007032965 A JP 2007032965A JP 2007032965 A JP2007032965 A JP 2007032965A JP 2008218440 A JP2008218440 A JP 2008218440A
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pad electrode
gan
led element
positive pad
type layer
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JP2007032965A
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Japanese (ja)
Inventor
Hiroaki Okagawa
広明 岡川
Takahide Shiroichi
隆秀 城市
Susumu Hiraoka
晋 平岡
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Priority to JP2007032965A priority Critical patent/JP2008218440A/ja
Publication of JP2008218440A publication Critical patent/JP2008218440A/ja
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JP2007032965A 2007-02-09 2007-02-14 ＧａＮ系ＬＥＤ素子および発光装置 Pending JP2008218440A (ja)

Priority Applications (1)

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JP2007032965A JP2008218440A (ja) 2007-02-09 2007-02-14 ＧａＮ系ＬＥＤ素子および発光装置

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JP2007031354 2007-02-09
JP2007032965A JP2008218440A (ja) 2007-02-09 2007-02-14 ＧａＮ系ＬＥＤ素子および発光装置

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JP2008218440A true JP2008218440A (ja) 2008-09-18

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JP2007032965A Pending JP2008218440A (ja) 2007-02-09 2007-02-14 ＧａＮ系ＬＥＤ素子および発光装置
JP2007057110A Pending JP2008218878A (ja) 2007-02-09 2007-03-07 ＧａＮ系ＬＥＤ素子および発光装置

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JP2007057110A Pending JP2008218878A (ja) 2007-02-09 2007-03-07 ＧａＮ系ＬＥＤ素子および発光装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219521A (ja) * 2009-03-13 2010-09-30 Lg Innotek Co Ltd 発光素子及びその製造方法
JP2012511249A (ja) * 2008-12-04 2012-05-17 エピヴァレー カンパニー リミテッド 半導体発光素子
TWI453955B (zh) * 2008-12-25 2014-09-21 Toyoda Gosei Kk 半導體發光元件及半導體發光元件之製造方法、燈
KR101750397B1 (ko) * 2009-06-30 2017-06-23 루미레즈 엘엘씨 Ⅲ-ｐ 반도체 발광 장치용 ｐ-콘택층

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267797A (ja) * 2009-05-14 2010-11-25 Showa Denko Kk 半導体発光素子、ランプ、照明装置、電子機器及び電極
TWI429107B (zh) 2009-05-14 2014-03-01 Toyoda Gosei Kk 半導體發光元件、其製造方法、燈、照明裝置、電子機器及機械裝置
JP5793292B2 (ja) * 2010-02-17 2015-10-14 豊田合成株式会社 半導体発光素子
KR101039939B1 (ko) 2010-04-28 2011-06-09 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 이를 포함하는 조명시스템
KR20120015651A (ko) * 2010-08-12 2012-02-22 서울옵토디바이스주식회사 개선된 광 추출 효율을 갖는 발광 다이오드
JP5258853B2 (ja) 2010-08-17 2013-08-07 株式会社東芝 半導体発光素子及びその製造方法
JP5479391B2 (ja) 2011-03-08 2014-04-23 株式会社東芝 半導体発光素子及びその製造方法
JP2015109332A (ja) * 2013-12-04 2015-06-11 シャープ株式会社 半導体発光素子
JP6711588B2 (ja) * 2015-10-29 2020-06-17 旭化成株式会社 窒化物半導体発光素子及び窒化物半導体発光装置
CN106159075B (zh) * 2016-09-05 2018-11-27 江苏新广联半导体有限公司 一种具有低热阻绝缘层结构的倒装led芯片及制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242516A (ja) * 1997-02-21 1998-09-11 Sharp Corp 窒化ガリウム系化合物半導体発光素子及びその製造方法
WO1998042030A1 (fr) * 1997-03-19 1998-09-24 Sharp Kabushiki Kaisha Element emetteur de lumiere semi-conducteur
JP2000077726A (ja) * 1998-08-27 2000-03-14 Seiwa Electric Mfg Co Ltd 半導体素子とその製造方法
JP2004193338A (ja) * 2002-12-11 2004-07-08 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP2005045038A (ja) * 2003-07-23 2005-02-17 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2006013034A (ja) * 2004-06-24 2006-01-12 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法
JP2006120927A (ja) * 2004-10-22 2006-05-11 Sharp Corp 発光ダイオード及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5143977B2 (ja) * 2000-11-09 2013-02-13 星和電機株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2003017748A (ja) * 2001-06-27 2003-01-17 Seiwa Electric Mfg Co Ltd 窒化ガリウム系化合物半導体発光素子及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242516A (ja) * 1997-02-21 1998-09-11 Sharp Corp 窒化ガリウム系化合物半導体発光素子及びその製造方法
WO1998042030A1 (fr) * 1997-03-19 1998-09-24 Sharp Kabushiki Kaisha Element emetteur de lumiere semi-conducteur
JP2000077726A (ja) * 1998-08-27 2000-03-14 Seiwa Electric Mfg Co Ltd 半導体素子とその製造方法
JP2004193338A (ja) * 2002-12-11 2004-07-08 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP2005045038A (ja) * 2003-07-23 2005-02-17 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2006013034A (ja) * 2004-06-24 2006-01-12 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法
JP2006120927A (ja) * 2004-10-22 2006-05-11 Sharp Corp 発光ダイオード及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012511249A (ja) * 2008-12-04 2012-05-17 エピヴァレー カンパニー リミテッド 半導体発光素子
TWI453955B (zh) * 2008-12-25 2014-09-21 Toyoda Gosei Kk 半導體發光元件及半導體發光元件之製造方法、燈
US8969905B2 (en) 2008-12-25 2015-03-03 Toyoda Gosei Co., Ltd. Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp
JP2010219521A (ja) * 2009-03-13 2010-09-30 Lg Innotek Co Ltd 発光素子及びその製造方法
KR101750397B1 (ko) * 2009-06-30 2017-06-23 루미레즈 엘엘씨 Ⅲ-ｐ 반도체 발광 장치용 ｐ-콘택층
KR20170075018A (ko) * 2009-06-30 2017-06-30 루미레즈 엘엘씨 Ⅲ-ｐ 반도체 발광 장치용 ｐ-콘택층
KR101886733B1 (ko) 2009-06-30 2018-08-09 루미리즈 홀딩 비.브이. Ⅲ-ｐ 반도체 발광 장치용 ｐ-콘택층

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