JP2008130884A - Soq基板およびsoq基板の製造方法 - Google Patents
Soq基板およびsoq基板の製造方法 Download PDFInfo
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- JP2008130884A JP2008130884A JP2006315363A JP2006315363A JP2008130884A JP 2008130884 A JP2008130884 A JP 2008130884A JP 2006315363 A JP2006315363 A JP 2006315363A JP 2006315363 A JP2006315363 A JP 2006315363A JP 2008130884 A JP2008130884 A JP 2008130884A
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- 239000000758 substrate Substances 0.000 title claims abstract description 185
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000010453 quartz Substances 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 238000005468 ion implantation Methods 0.000 claims abstract description 35
- 239000001257 hydrogen Substances 0.000 claims abstract description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 21
- 230000003746 surface roughness Effects 0.000 claims abstract description 17
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 72
- 239000010409 thin film Substances 0.000 claims description 22
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 14
- 238000004381 surface treatment Methods 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000001994 activation Methods 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 45
- -1 Hydrogen ions Chemical class 0.000 abstract description 6
- 238000009832 plasma treatment Methods 0.000 abstract description 5
- 230000009477 glass transition Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract description 2
- 230000032798 delamination Effects 0.000 abstract 1
- 238000009499 grossing Methods 0.000 abstract 1
- 230000035939 shock Effects 0.000 abstract 1
- 206010040844 Skin exfoliation Diseases 0.000 description 28
- 239000007789 gas Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008707 rearrangement Effects 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】単結晶Si基板10の表面に酸化膜11を介して水素イオンを注入して単結晶Si基板10の表面近傍の所定の深さ(平均イオン注入深さL)に均一なイオン注入層12を形成し、これらの基板の接合面にプラズマ処理やオゾン処理を施す。単結晶Si基板10と石英基板20を貼り合わせた状態で外部衝撃を付与して単結晶シリコンのバルク14からシリコン膜13を機械的に剥離して石英基板20上に酸化膜11を介して設けられたSOQ膜13が得られる。このSOQ膜表面の更なる平滑化のために、石英のガラス転移温度以下の1000℃以下の温度で水素熱処理が施される。剥離直後の表面粗さがRMS平均値約5nmのサンプルに水素熱処理を施した後のSOQ膜の表面粗さはRMS平均値で0.3nm以下と良好である。
【選択図】図1
Description
11 酸化膜
12 イオン注入層
13 シリコン膜
14 単結晶シリコンのバルク
20 石英基板
Claims (8)
- シリコン基板の主面に水素イオン注入層を形成するイオン注入工程と、石英基板と前記シリコン基板の少なくとも一方の主面に活性化処理を施す表面処理工程と、前記石英基板と前記シリコン基板の主面同士を貼り合わせる工程と、前記貼り合せ基板の前記シリコン基板からシリコン薄膜を加熱なしに機械的剥離して前記石英基板の主面上にシリコン膜を形成する剥離工程と、前記シリコン膜に1000℃以下の温度で水素熱処理を施す工程とを備えていることを特徴とするSOQ基板の製造方法。
- 前記水素熱処理時の温度範囲が800℃以上である請求項1に記載のSOQ基板の製造方法。
- 前記水素熱処理の雰囲気中の水素濃度が0.5%以上である請求項1又は2に記載のSOQ基板の製造方法。
- 前記活性化処理がプラズマ処理又はオゾン処理の少なくとも一方で実行される
請求項1乃至3の何れか1項に記載のSOQ基板の製造方法。 - 前記貼り合わせる工程の後で前記剥離工程の前に、前記石英基板と前記シリコン基板を貼り合わせた状態で350℃以下の温度で熱処理する工程を備えている請求項1乃至4の何れか1項に記載のSOQ基板の製造方法。
- 前記シリコン基板は主面にシリコン酸化膜を有するものである請求項1乃至5の何れか1項に記載のSOQ基板の製造方法。
- 前記シリコン酸化膜の厚みが0.2μm以上である請求項6に記載のSOQ基板の製造方法。
- 請求項1乃至7の何れか1項に記載の方法で得られたSOQ基板であって、前記シリコン膜の表面の粗さがRMSで0.3nm以下であることを特徴とするSOQ基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006315363A JP5249511B2 (ja) | 2006-11-22 | 2006-11-22 | Soq基板およびsoq基板の製造方法 |
US11/984,184 US7790571B2 (en) | 2006-11-22 | 2007-11-14 | SOQ substrate and method of manufacturing SOQ substrate |
EP07022103.1A EP1926139B1 (en) | 2006-11-22 | 2007-11-14 | SOQ substrate and method of manufacturing SOQ substrate |
CN2007101864843A CN101188190B (zh) | 2006-11-22 | 2007-11-22 | Soq基板以及soq基板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006315363A JP5249511B2 (ja) | 2006-11-22 | 2006-11-22 | Soq基板およびsoq基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008130884A true JP2008130884A (ja) | 2008-06-05 |
JP5249511B2 JP5249511B2 (ja) | 2013-07-31 |
Family
ID=39155509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006315363A Active JP5249511B2 (ja) | 2006-11-22 | 2006-11-22 | Soq基板およびsoq基板の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7790571B2 (ja) |
EP (1) | EP1926139B1 (ja) |
JP (1) | JP5249511B2 (ja) |
CN (1) | CN101188190B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012146902A (ja) * | 2011-01-14 | 2012-08-02 | Mitsubishi Electric Corp | 平面導波路型レーザ装置およびその製造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5143477B2 (ja) | 2007-05-31 | 2013-02-13 | 信越化学工業株式会社 | Soiウエーハの製造方法 |
JP4967842B2 (ja) * | 2007-06-18 | 2012-07-04 | セイコーエプソン株式会社 | シリコン基材の接合方法、液滴吐出ヘッド、液滴吐出装置および電子デバイス |
JP5248838B2 (ja) * | 2007-10-25 | 2013-07-31 | 信越化学工業株式会社 | 半導体基板の製造方法 |
US7820527B2 (en) * | 2008-02-20 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Cleave initiation using varying ion implant dose |
CN102259829A (zh) * | 2011-07-04 | 2011-11-30 | 上海先进半导体制造股份有限公司 | 隔离腔体及其制造方法 |
CN106489187B (zh) * | 2014-07-10 | 2019-10-25 | 株式会社希克斯 | 半导体基板和半导体基板的制造方法 |
US20210216020A1 (en) * | 2020-01-15 | 2021-07-15 | Board Of Regents, The Univerity Of Texas System | Rapid large-scale fabrication of metasurfaces with complex unit cells |
JP7466961B1 (ja) | 2023-05-29 | 2024-04-15 | 大 西田 | 連結具及び施工方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10326883A (ja) * | 1997-03-26 | 1998-12-08 | Canon Inc | 基板及びその作製方法 |
JPH1145840A (ja) * | 1997-03-27 | 1999-02-16 | Canon Inc | 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体 |
JPH11274018A (ja) * | 1998-10-09 | 1999-10-08 | Canon Inc | 複合部材の分離方法および半導体基体の作製方法 |
JP2001291851A (ja) * | 1996-11-15 | 2001-10-19 | Canon Inc | 半導体部材の製造方法 |
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JP2005101630A (ja) * | 1996-12-18 | 2005-04-14 | Canon Inc | 半導体部材の製造方法 |
JP2006210900A (ja) * | 2004-12-28 | 2006-08-10 | Shin Etsu Chem Co Ltd | Soiウエーハの製造方法及びsoiウェーハ |
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JPS57149301A (en) | 1981-03-11 | 1982-09-14 | Daiichi Togyo Kk | Novel polysaccharide having coagulating property |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
CA2194653A1 (en) * | 1997-01-08 | 1998-07-08 | Junichi Matsushita | Hydrogen heat treatment method of silicon wafers using a high-purity inert substitution gas |
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JP3697106B2 (ja) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
JP3395661B2 (ja) * | 1998-07-07 | 2003-04-14 | 信越半導体株式会社 | Soiウエーハの製造方法 |
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2006
- 2006-11-22 JP JP2006315363A patent/JP5249511B2/ja active Active
-
2007
- 2007-11-14 US US11/984,184 patent/US7790571B2/en active Active
- 2007-11-14 EP EP07022103.1A patent/EP1926139B1/en active Active
- 2007-11-22 CN CN2007101864843A patent/CN101188190B/zh not_active Expired - Fee Related
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JPH1145840A (ja) * | 1997-03-27 | 1999-02-16 | Canon Inc | 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体 |
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JP2012146902A (ja) * | 2011-01-14 | 2012-08-02 | Mitsubishi Electric Corp | 平面導波路型レーザ装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1926139B1 (en) | 2013-10-23 |
CN101188190B (zh) | 2012-08-08 |
US7790571B2 (en) | 2010-09-07 |
JP5249511B2 (ja) | 2013-07-31 |
EP1926139A2 (en) | 2008-05-28 |
EP1926139A3 (en) | 2011-05-04 |
US20080119028A1 (en) | 2008-05-22 |
CN101188190A (zh) | 2008-05-28 |
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