JP2008129314A5 - - Google Patents
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- Publication number
- JP2008129314A5 JP2008129314A5 JP2006314064A JP2006314064A JP2008129314A5 JP 2008129314 A5 JP2008129314 A5 JP 2008129314A5 JP 2006314064 A JP2006314064 A JP 2006314064A JP 2006314064 A JP2006314064 A JP 2006314064A JP 2008129314 A5 JP2008129314 A5 JP 2008129314A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- image display
- manufacturing
- electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims 37
- 239000010410 layer Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 9
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000011229 interlayer Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910000583 Nd alloy Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006314064A JP2008129314A (ja) | 2006-11-21 | 2006-11-21 | 画像表示装置およびその製造方法 |
| US11/979,515 US20080119018A1 (en) | 2006-11-21 | 2007-11-05 | Image display unit and method for manufacturing the same |
| CN200710165842.2A CN101187764A (zh) | 2006-11-21 | 2007-11-05 | 图像显示装置及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006314064A JP2008129314A (ja) | 2006-11-21 | 2006-11-21 | 画像表示装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008129314A JP2008129314A (ja) | 2008-06-05 |
| JP2008129314A5 true JP2008129314A5 (enExample) | 2009-08-06 |
Family
ID=39417425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006314064A Pending JP2008129314A (ja) | 2006-11-21 | 2006-11-21 | 画像表示装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20080119018A1 (enExample) |
| JP (1) | JP2008129314A (enExample) |
| CN (1) | CN101187764A (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100908236B1 (ko) * | 2008-04-24 | 2009-07-20 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조방법 |
| JP4844617B2 (ja) | 2008-11-05 | 2011-12-28 | ソニー株式会社 | 薄膜トランジスタ基板および表示装置 |
| JPWO2010110179A1 (ja) * | 2009-03-23 | 2012-09-27 | シャープ株式会社 | アクティブ素子基板とその製造方法、及びこの製造方法で製造したアクティブ素子基板を用いた表示装置 |
| WO2011007677A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101739154B1 (ko) * | 2009-07-17 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR20120051727A (ko) * | 2009-07-31 | 2012-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
| KR102362616B1 (ko) | 2009-07-31 | 2022-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| TWI582951B (zh) * | 2009-08-07 | 2017-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置 |
| WO2011027676A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011027664A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011043194A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011048923A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | E-book reader |
| WO2011048929A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN105702688B (zh) | 2009-10-21 | 2020-09-08 | 株式会社半导体能源研究所 | 液晶显示器件及包括该液晶显示器件的电子设备 |
| CN104600074A (zh) | 2009-11-06 | 2015-05-06 | 株式会社半导体能源研究所 | 半导体装置 |
| KR101117642B1 (ko) * | 2009-11-16 | 2012-03-05 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| BR112012013851A2 (pt) * | 2009-12-09 | 2019-09-24 | Sharp Kk | dispositivo semicondutor e método para produzir o mesmo |
| KR101084183B1 (ko) * | 2010-01-06 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조방법 |
| JP5852793B2 (ja) * | 2010-05-21 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| KR101711191B1 (ko) * | 2010-10-28 | 2017-03-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| KR101318601B1 (ko) * | 2010-12-01 | 2013-10-15 | 샤프 가부시키가이샤 | Tft 기판 및 tft 기판의 제조 방법 |
| KR101781532B1 (ko) * | 2011-03-14 | 2017-10-24 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치와 그 제조방법 |
| KR102072244B1 (ko) * | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101682320B1 (ko) * | 2012-10-31 | 2016-12-05 | 샤프 가부시키가이샤 | 일렉트로루미네센스 기판 및 그 제조 방법, 일렉트로루미네센스 표시 패널, 일렉트로루미네센스 표시 장치 |
| JP6300589B2 (ja) | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102294507B1 (ko) * | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2015115469A (ja) | 2013-12-12 | 2015-06-22 | ソニー株式会社 | 薄膜トランジスタ、表示装置、電子機器、および薄膜トランジスタの製造方法 |
| US9577110B2 (en) * | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
| JP6506545B2 (ja) | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN103715267A (zh) * | 2013-12-30 | 2014-04-09 | 京东方科技集团股份有限公司 | 薄膜晶体管、tft阵列基板及其制造方法和显示装置 |
| WO2017014252A1 (ja) * | 2015-07-22 | 2017-01-26 | シャープ株式会社 | タッチパネル付き表示装置及びタッチパネル付き表示装置の製造方法 |
| WO2020229911A1 (ja) | 2019-05-10 | 2020-11-19 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
| EP4170734A4 (en) * | 2020-06-18 | 2024-06-19 | Nichia Corporation | METHOD FOR PRODUCING AN IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6431457A (en) * | 1987-07-28 | 1989-02-01 | Nippon Sheet Glass Co Ltd | Manufacture of thin film transistor |
| JP2771820B2 (ja) * | 1988-07-08 | 1998-07-02 | 株式会社日立製作所 | アクティブマトリクスパネル及びその製造方法 |
| JP2639356B2 (ja) * | 1994-09-01 | 1997-08-13 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
| TWI226470B (en) * | 1998-01-19 | 2005-01-11 | Hitachi Ltd | LCD device |
| JP3420135B2 (ja) * | 1999-10-26 | 2003-06-23 | 日本電気株式会社 | アクティブマトリクス基板の製造方法 |
| US6838696B2 (en) * | 2000-03-15 | 2005-01-04 | Advanced Display Inc. | Liquid crystal display |
| JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたｔｆｔアレイ基板およびその製造方法 |
| JP4678933B2 (ja) * | 2000-11-07 | 2011-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2005011920A (ja) * | 2003-06-18 | 2005-01-13 | Hitachi Displays Ltd | 表示装置とその製造方法 |
| JP4737971B2 (ja) * | 2003-11-14 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置および液晶表示装置の作製方法 |
-
2006
- 2006-11-21 JP JP2006314064A patent/JP2008129314A/ja active Pending
-
2007
- 2007-11-05 US US11/979,515 patent/US20080119018A1/en not_active Abandoned
- 2007-11-05 CN CN200710165842.2A patent/CN101187764A/zh active Pending
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