JP2012208151A5 - - Google Patents
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- Publication number
- JP2012208151A5 JP2012208151A5 JP2011071487A JP2011071487A JP2012208151A5 JP 2012208151 A5 JP2012208151 A5 JP 2012208151A5 JP 2011071487 A JP2011071487 A JP 2011071487A JP 2011071487 A JP2011071487 A JP 2011071487A JP 2012208151 A5 JP2012208151 A5 JP 2012208151A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- transistor
- semiconductor layer
- display device
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 description 38
- 239000010410 layer Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011071487A JP5766481B2 (ja) | 2011-03-29 | 2011-03-29 | 表示装置および電子機器 |
| US13/415,625 US9368525B2 (en) | 2011-03-29 | 2012-03-08 | Display device and electronic apparatus |
| TW101109137A TWI482274B (zh) | 2011-03-29 | 2012-03-16 | 顯示裝置及電子裝置 |
| KR1020120028970A KR20120112050A (ko) | 2011-03-29 | 2012-03-21 | 표시 장치 및 전자 기기 |
| CN201210078676.3A CN102738145B (zh) | 2011-03-29 | 2012-03-22 | 显示装置和电子设备 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011071487A JP5766481B2 (ja) | 2011-03-29 | 2011-03-29 | 表示装置および電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012208151A JP2012208151A (ja) | 2012-10-25 |
| JP2012208151A5 true JP2012208151A5 (enExample) | 2014-04-24 |
| JP5766481B2 JP5766481B2 (ja) | 2015-08-19 |
Family
ID=46926815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011071487A Active JP5766481B2 (ja) | 2011-03-29 | 2011-03-29 | 表示装置および電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9368525B2 (enExample) |
| JP (1) | JP5766481B2 (enExample) |
| KR (1) | KR20120112050A (enExample) |
| CN (1) | CN102738145B (enExample) |
| TW (1) | TWI482274B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6019329B2 (ja) * | 2011-03-31 | 2016-11-02 | 株式会社Joled | 表示装置および電子機器 |
| CN103472640A (zh) * | 2012-06-07 | 2013-12-25 | 瀚宇彩晶股份有限公司 | 液晶显示面板及其制造方法 |
| KR101682320B1 (ko) * | 2012-10-31 | 2016-12-05 | 샤프 가부시키가이샤 | 일렉트로루미네센스 기판 및 그 제조 방법, 일렉트로루미네센스 표시 패널, 일렉트로루미네센스 표시 장치 |
| JP2014093433A (ja) * | 2012-11-05 | 2014-05-19 | Sony Corp | 半導体装置、表示装置および電子機器 |
| TWI583000B (zh) * | 2012-11-21 | 2017-05-11 | Sharp Kk | Semiconductor device and display device |
| US8981359B2 (en) * | 2012-12-21 | 2015-03-17 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
| KR102770182B1 (ko) | 2012-12-28 | 2025-02-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
| TWI611566B (zh) * | 2013-02-25 | 2018-01-11 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
| KR101844284B1 (ko) | 2013-10-07 | 2018-04-02 | 엘지디스플레이 주식회사 | 표시장치 및 그의 제조방법 |
| KR102091444B1 (ko) * | 2013-10-08 | 2020-03-23 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
| KR102345617B1 (ko) * | 2014-01-13 | 2022-01-03 | 삼성디스플레이 주식회사 | 표시패널 |
| CN111081734B (zh) * | 2014-03-17 | 2025-10-03 | 三星显示有限公司 | 薄膜晶体管元件基板及其制造方法、和有机el显示装置 |
| KR20170119801A (ko) * | 2016-04-19 | 2017-10-30 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
| CN112614882B (zh) * | 2016-04-28 | 2024-08-09 | 索尼公司 | 显示装置和电子设备 |
| US11195863B2 (en) * | 2018-09-21 | 2021-12-07 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel having a storage capacitor, manufacturing method the same thereof and display module having the same |
| JP7489605B2 (ja) * | 2019-10-01 | 2024-05-24 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0675248A (ja) * | 1992-06-30 | 1994-03-18 | Sony Corp | アクティブマトリクス基板 |
| KR100209620B1 (ko) * | 1996-08-31 | 1999-07-15 | 구자홍 | 액정 표시 장치 및 그 제조방법 |
| JP2000312005A (ja) * | 1999-02-26 | 2000-11-07 | Seiko Epson Corp | 半導体装置の製造方法及び電気光学装置の製造方法並びに半導体装置及び電気光学装置 |
| US6734924B2 (en) * | 2000-09-08 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2004165241A (ja) * | 2002-11-11 | 2004-06-10 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP4444035B2 (ja) * | 2004-04-21 | 2010-03-31 | シャープ株式会社 | 表示装置用アクティブマトリクス基板およびその製造方法 |
| KR101024651B1 (ko) * | 2004-06-05 | 2011-03-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 모기판 및 그 제조 방법 |
| JP4063266B2 (ja) * | 2004-09-30 | 2008-03-19 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器 |
| EP1837842B1 (en) * | 2004-12-16 | 2014-01-22 | Sharp Kabushiki Kaisha | Active matrix substrate, method for manufacturing active matrix substrate, display, liquid crystal display and television system |
| JP4919644B2 (ja) * | 2005-10-04 | 2012-04-18 | 三菱電機株式会社 | 液晶表示装置 |
| JP5015471B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
| JP2008197515A (ja) * | 2007-02-15 | 2008-08-28 | Canon Inc | 画像表示装置 |
| CN101109881A (zh) * | 2007-07-06 | 2008-01-23 | 昆山龙腾光电有限公司 | 一种液晶显示面板及其制造方法 |
| JP4970545B2 (ja) * | 2007-09-20 | 2012-07-11 | シャープ株式会社 | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、および、アクティブマトリクス基板の製造方法 |
| JP5109887B2 (ja) * | 2008-09-12 | 2012-12-26 | エプソンイメージングデバイス株式会社 | 液晶表示装置 |
| JP5491833B2 (ja) * | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8654292B2 (en) * | 2009-05-29 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
-
2011
- 2011-03-29 JP JP2011071487A patent/JP5766481B2/ja active Active
-
2012
- 2012-03-08 US US13/415,625 patent/US9368525B2/en active Active
- 2012-03-16 TW TW101109137A patent/TWI482274B/zh active
- 2012-03-21 KR KR1020120028970A patent/KR20120112050A/ko not_active Withdrawn
- 2012-03-22 CN CN201210078676.3A patent/CN102738145B/zh active Active
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