JP5766481B2 - 表示装置および電子機器 - Google Patents

表示装置および電子機器 Download PDF

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Publication number
JP5766481B2
JP5766481B2 JP2011071487A JP2011071487A JP5766481B2 JP 5766481 B2 JP5766481 B2 JP 5766481B2 JP 2011071487 A JP2011071487 A JP 2011071487A JP 2011071487 A JP2011071487 A JP 2011071487A JP 5766481 B2 JP5766481 B2 JP 5766481B2
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JP
Japan
Prior art keywords
semiconductor layer
film
insulating film
display device
conductive film
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JP2011071487A
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English (en)
Japanese (ja)
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JP2012208151A5 (enExample
JP2012208151A (ja
Inventor
成浩 諸沢
成浩 諸沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Joled Inc
Original Assignee
Joled Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joled Inc filed Critical Joled Inc
Priority to JP2011071487A priority Critical patent/JP5766481B2/ja
Priority to US13/415,625 priority patent/US9368525B2/en
Priority to TW101109137A priority patent/TWI482274B/zh
Priority to KR1020120028970A priority patent/KR20120112050A/ko
Priority to CN201210078676.3A priority patent/CN102738145B/zh
Publication of JP2012208151A publication Critical patent/JP2012208151A/ja
Publication of JP2012208151A5 publication Critical patent/JP2012208151A5/ja
Application granted granted Critical
Publication of JP5766481B2 publication Critical patent/JP5766481B2/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2011071487A 2011-03-29 2011-03-29 表示装置および電子機器 Active JP5766481B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011071487A JP5766481B2 (ja) 2011-03-29 2011-03-29 表示装置および電子機器
US13/415,625 US9368525B2 (en) 2011-03-29 2012-03-08 Display device and electronic apparatus
TW101109137A TWI482274B (zh) 2011-03-29 2012-03-16 顯示裝置及電子裝置
KR1020120028970A KR20120112050A (ko) 2011-03-29 2012-03-21 표시 장치 및 전자 기기
CN201210078676.3A CN102738145B (zh) 2011-03-29 2012-03-22 显示装置和电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011071487A JP5766481B2 (ja) 2011-03-29 2011-03-29 表示装置および電子機器

Publications (3)

Publication Number Publication Date
JP2012208151A JP2012208151A (ja) 2012-10-25
JP2012208151A5 JP2012208151A5 (enExample) 2014-04-24
JP5766481B2 true JP5766481B2 (ja) 2015-08-19

Family

ID=46926815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011071487A Active JP5766481B2 (ja) 2011-03-29 2011-03-29 表示装置および電子機器

Country Status (5)

Country Link
US (1) US9368525B2 (enExample)
JP (1) JP5766481B2 (enExample)
KR (1) KR20120112050A (enExample)
CN (1) CN102738145B (enExample)
TW (1) TWI482274B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6019329B2 (ja) * 2011-03-31 2016-11-02 株式会社Ｊｏｌｅｄ 表示装置および電子機器
CN103472640A (zh) * 2012-06-07 2013-12-25 瀚宇彩晶股份有限公司 液晶显示面板及其制造方法
KR101682320B1 (ko) * 2012-10-31 2016-12-05 샤프 가부시키가이샤 일렉트로루미네센스 기판 및 그 제조 방법, 일렉트로루미네센스 표시 패널, 일렉트로루미네센스 표시 장치
JP2014093433A (ja) * 2012-11-05 2014-05-19 Sony Corp 半導体装置、表示装置および電子機器
TWI583000B (zh) * 2012-11-21 2017-05-11 Sharp Kk Semiconductor device and display device
US8981359B2 (en) * 2012-12-21 2015-03-17 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
KR102770182B1 (ko) 2012-12-28 2025-02-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
TWI611566B (zh) * 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
KR101844284B1 (ko) 2013-10-07 2018-04-02 엘지디스플레이 주식회사 표시장치 및 그의 제조방법
KR102091444B1 (ko) * 2013-10-08 2020-03-23 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
KR102345617B1 (ko) * 2014-01-13 2022-01-03 삼성디스플레이 주식회사 표시패널
CN111081734B (zh) * 2014-03-17 2025-10-03 三星显示有限公司 薄膜晶体管元件基板及其制造方法、和有机el显示装置
KR20170119801A (ko) * 2016-04-19 2017-10-30 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN112614882B (zh) * 2016-04-28 2024-08-09 索尼公司 显示装置和电子设备
US11195863B2 (en) * 2018-09-21 2021-12-07 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel having a storage capacitor, manufacturing method the same thereof and display module having the same
JP7489605B2 (ja) * 2019-10-01 2024-05-24 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0675248A (ja) * 1992-06-30 1994-03-18 Sony Corp アクティブマトリクス基板
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
JP2000312005A (ja) * 1999-02-26 2000-11-07 Seiko Epson Corp 半導体装置の製造方法及び電気光学装置の製造方法並びに半導体装置及び電気光学装置
US6734924B2 (en) * 2000-09-08 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2004165241A (ja) * 2002-11-11 2004-06-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4444035B2 (ja) * 2004-04-21 2010-03-31 シャープ株式会社 表示装置用アクティブマトリクス基板およびその製造方法
KR101024651B1 (ko) * 2004-06-05 2011-03-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 모기판 및 그 제조 방법
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
EP1837842B1 (en) * 2004-12-16 2014-01-22 Sharp Kabushiki Kaisha Active matrix substrate, method for manufacturing active matrix substrate, display, liquid crystal display and television system
JP4919644B2 (ja) * 2005-10-04 2012-04-18 三菱電機株式会社 液晶表示装置
JP5015471B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
JP2008197515A (ja) * 2007-02-15 2008-08-28 Canon Inc 画像表示装置
CN101109881A (zh) * 2007-07-06 2008-01-23 昆山龙腾光电有限公司 一种液晶显示面板及其制造方法
JP4970545B2 (ja) * 2007-09-20 2012-07-11 シャープ株式会社 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、および、アクティブマトリクス基板の製造方法
JP5109887B2 (ja) * 2008-09-12 2012-12-26 エプソンイメージングデバイス株式会社 液晶表示装置
JP5491833B2 (ja) * 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
US8654292B2 (en) * 2009-05-29 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same

Also Published As

Publication number Publication date
CN102738145A (zh) 2012-10-17
US20120249915A1 (en) 2012-10-04
US9368525B2 (en) 2016-06-14
TWI482274B (zh) 2015-04-21
JP2012208151A (ja) 2012-10-25
TW201301502A (zh) 2013-01-01
CN102738145B (zh) 2016-09-21
KR20120112050A (ko) 2012-10-11

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