TWI482274B - 顯示裝置及電子裝置 - Google Patents

顯示裝置及電子裝置 Download PDF

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Publication number
TWI482274B
TWI482274B TW101109137A TW101109137A TWI482274B TW I482274 B TWI482274 B TW I482274B TW 101109137 A TW101109137 A TW 101109137A TW 101109137 A TW101109137 A TW 101109137A TW I482274 B TWI482274 B TW I482274B
Authority
TW
Taiwan
Prior art keywords
film
semiconductor layer
display device
insulating film
layer
Prior art date
Application number
TW101109137A
Other languages
English (en)
Chinese (zh)
Other versions
TW201301502A (zh
Inventor
Narihiro Morosawa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW201301502A publication Critical patent/TW201301502A/zh
Application granted granted Critical
Publication of TWI482274B publication Critical patent/TWI482274B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW101109137A 2011-03-29 2012-03-16 顯示裝置及電子裝置 TWI482274B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011071487A JP5766481B2 (ja) 2011-03-29 2011-03-29 表示装置および電子機器

Publications (2)

Publication Number Publication Date
TW201301502A TW201301502A (zh) 2013-01-01
TWI482274B true TWI482274B (zh) 2015-04-21

Family

ID=46926815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101109137A TWI482274B (zh) 2011-03-29 2012-03-16 顯示裝置及電子裝置

Country Status (5)

Country Link
US (1) US9368525B2 (enExample)
JP (1) JP5766481B2 (enExample)
KR (1) KR20120112050A (enExample)
CN (1) CN102738145B (enExample)
TW (1) TWI482274B (enExample)

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JP6019329B2 (ja) * 2011-03-31 2016-11-02 株式会社Ｊｏｌｅｄ 表示装置および電子機器
CN103472640A (zh) * 2012-06-07 2013-12-25 瀚宇彩晶股份有限公司 液晶显示面板及其制造方法
KR101682320B1 (ko) * 2012-10-31 2016-12-05 샤프 가부시키가이샤 일렉트로루미네센스 기판 및 그 제조 방법, 일렉트로루미네센스 표시 패널, 일렉트로루미네센스 표시 장치
JP2014093433A (ja) * 2012-11-05 2014-05-19 Sony Corp 半導体装置、表示装置および電子機器
TWI583000B (zh) * 2012-11-21 2017-05-11 Sharp Kk Semiconductor device and display device
US8981359B2 (en) * 2012-12-21 2015-03-17 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
KR102770182B1 (ko) 2012-12-28 2025-02-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
TWI611566B (zh) * 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
KR101844284B1 (ko) 2013-10-07 2018-04-02 엘지디스플레이 주식회사 표시장치 및 그의 제조방법
KR102091444B1 (ko) * 2013-10-08 2020-03-23 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
KR102345617B1 (ko) * 2014-01-13 2022-01-03 삼성디스플레이 주식회사 표시패널
CN111081734B (zh) * 2014-03-17 2025-10-03 三星显示有限公司 薄膜晶体管元件基板及其制造方法、和有机el显示装置
KR20170119801A (ko) * 2016-04-19 2017-10-30 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN112614882B (zh) * 2016-04-28 2024-08-09 索尼公司 显示装置和电子设备
US11195863B2 (en) * 2018-09-21 2021-12-07 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel having a storage capacitor, manufacturing method the same thereof and display module having the same
JP7489605B2 (ja) * 2019-10-01 2024-05-24 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

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TWI256106B (en) * 2004-04-21 2006-06-01 Sharp Kk Active matrix substrate for display device and its manufacture method
TW201036163A (en) * 2008-12-05 2010-10-01 Semiconductor Energy Lab Semiconductor device
TW201107820A (en) * 2009-05-29 2011-03-01 Semiconductor Energy Lab Liquid crystal display device and method for manufacturing the same

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JPH0675248A (ja) * 1992-06-30 1994-03-18 Sony Corp アクティブマトリクス基板
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
JP2000312005A (ja) * 1999-02-26 2000-11-07 Seiko Epson Corp 半導体装置の製造方法及び電気光学装置の製造方法並びに半導体装置及び電気光学装置
US6734924B2 (en) * 2000-09-08 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2004165241A (ja) * 2002-11-11 2004-06-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR101024651B1 (ko) * 2004-06-05 2011-03-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 모기판 및 그 제조 방법
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
EP1837842B1 (en) * 2004-12-16 2014-01-22 Sharp Kabushiki Kaisha Active matrix substrate, method for manufacturing active matrix substrate, display, liquid crystal display and television system
JP4919644B2 (ja) * 2005-10-04 2012-04-18 三菱電機株式会社 液晶表示装置
JP5015471B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
JP2008197515A (ja) * 2007-02-15 2008-08-28 Canon Inc 画像表示装置
CN101109881A (zh) * 2007-07-06 2008-01-23 昆山龙腾光电有限公司 一种液晶显示面板及其制造方法
JP4970545B2 (ja) * 2007-09-20 2012-07-11 シャープ株式会社 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、および、アクティブマトリクス基板の製造方法
JP5109887B2 (ja) * 2008-09-12 2012-12-26 エプソンイメージングデバイス株式会社 液晶表示装置

Patent Citations (3)

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TWI256106B (en) * 2004-04-21 2006-06-01 Sharp Kk Active matrix substrate for display device and its manufacture method
TW201036163A (en) * 2008-12-05 2010-10-01 Semiconductor Energy Lab Semiconductor device
TW201107820A (en) * 2009-05-29 2011-03-01 Semiconductor Energy Lab Liquid crystal display device and method for manufacturing the same

Also Published As

Publication number Publication date
CN102738145A (zh) 2012-10-17
US20120249915A1 (en) 2012-10-04
JP5766481B2 (ja) 2015-08-19
US9368525B2 (en) 2016-06-14
JP2012208151A (ja) 2012-10-25
TW201301502A (zh) 2013-01-01
CN102738145B (zh) 2016-09-21
KR20120112050A (ko) 2012-10-11

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