KR20120112050A - 표시 장치 및 전자 기기 - Google Patents

표시 장치 및 전자 기기 Download PDF

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Publication number
KR20120112050A
KR20120112050A KR1020120028970A KR20120028970A KR20120112050A KR 20120112050 A KR20120112050 A KR 20120112050A KR 1020120028970 A KR1020120028970 A KR 1020120028970A KR 20120028970 A KR20120028970 A KR 20120028970A KR 20120112050 A KR20120112050 A KR 20120112050A
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KR
South Korea
Prior art keywords
semiconductor layer
film
insulating film
display device
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020120028970A
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English (en)
Korean (ko)
Inventor
나리히로 모로사와
Original Assignee
소니 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20120112050A publication Critical patent/KR20120112050A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020120028970A 2011-03-29 2012-03-21 표시 장치 및 전자 기기 Withdrawn KR20120112050A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011071487A JP5766481B2 (ja) 2011-03-29 2011-03-29 表示装置および電子機器
JPJP-P-2011-071487 2011-03-29

Publications (1)

Publication Number Publication Date
KR20120112050A true KR20120112050A (ko) 2012-10-11

Family

ID=46926815

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120028970A Withdrawn KR20120112050A (ko) 2011-03-29 2012-03-21 표시 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US9368525B2 (enExample)
JP (1) JP5766481B2 (enExample)
KR (1) KR20120112050A (enExample)
CN (1) CN102738145B (enExample)
TW (1) TWI482274B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150084256A (ko) * 2014-01-13 2015-07-22 삼성디스플레이 주식회사 표시패널
US9608009B2 (en) 2013-10-07 2017-03-28 Lg Display Co., Ltd. Display device and method of fabricating the same

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JP6019329B2 (ja) * 2011-03-31 2016-11-02 株式会社Ｊｏｌｅｄ 表示装置および電子機器
CN103472640A (zh) * 2012-06-07 2013-12-25 瀚宇彩晶股份有限公司 液晶显示面板及其制造方法
US9679954B2 (en) * 2012-10-31 2017-06-13 Sharp Kabushiki Kaisha Electroluminescent substrate, method for producing same, electroluminescent display panel, and electroluminescent display device
JP2014093433A (ja) * 2012-11-05 2014-05-19 Sony Corp 半導体装置、表示装置および電子機器
TWI583000B (zh) * 2012-11-21 2017-05-11 夏普股份有限公司 Semiconductor device and display device
US8981359B2 (en) * 2012-12-21 2015-03-17 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
WO2014104265A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI611566B (zh) * 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
KR102091444B1 (ko) * 2013-10-08 2020-03-23 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
CN111081734B (zh) * 2014-03-17 2025-10-03 三星显示有限公司 薄膜晶体管元件基板及其制造方法、和有机el显示装置
KR20170119801A (ko) * 2016-04-19 2017-10-30 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN109074767B (zh) * 2016-04-28 2021-01-12 索尼公司 显示装置和电子设备
US11195863B2 (en) * 2018-09-21 2021-12-07 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel having a storage capacitor, manufacturing method the same thereof and display module having the same
CN114342092B (zh) * 2019-10-01 2024-12-24 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置

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JPH0675248A (ja) * 1992-06-30 1994-03-18 Sony Corp アクティブマトリクス基板
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
JP2000312005A (ja) * 1999-02-26 2000-11-07 Seiko Epson Corp 半導体装置の製造方法及び電気光学装置の製造方法並びに半導体装置及び電気光学装置
US6734924B2 (en) * 2000-09-08 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2004165241A (ja) * 2002-11-11 2004-06-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4444035B2 (ja) * 2004-04-21 2010-03-31 シャープ株式会社 表示装置用アクティブマトリクス基板およびその製造方法
KR101024651B1 (ko) * 2004-06-05 2011-03-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 모기판 및 그 제조 방법
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
CN100481156C (zh) * 2004-12-16 2009-04-22 夏普株式会社 有源矩阵衬底及其制造方法、显示装置、液晶显示装置及电视接收装置
JP4919644B2 (ja) * 2005-10-04 2012-04-18 三菱電機株式会社 液晶表示装置
JP5015471B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
JP2008197515A (ja) * 2007-02-15 2008-08-28 Canon Inc 画像表示装置
CN101109881A (zh) * 2007-07-06 2008-01-23 昆山龙腾光电有限公司 一种液晶显示面板及其制造方法
WO2009037892A1 (ja) * 2007-09-20 2009-03-26 Sharp Kabushiki Kaisha アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、および、アクティブマトリクス基板の製造方法
JP5109887B2 (ja) * 2008-09-12 2012-12-26 エプソンイメージングデバイス株式会社 液晶表示装置
JP5491833B2 (ja) * 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
US8654292B2 (en) * 2009-05-29 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9608009B2 (en) 2013-10-07 2017-03-28 Lg Display Co., Ltd. Display device and method of fabricating the same
US10020324B2 (en) 2013-10-07 2018-07-10 Lg Display Co., Ltd. Display device
KR20150084256A (ko) * 2014-01-13 2015-07-22 삼성디스플레이 주식회사 표시패널

Also Published As

Publication number Publication date
TW201301502A (zh) 2013-01-01
CN102738145B (zh) 2016-09-21
CN102738145A (zh) 2012-10-17
US9368525B2 (en) 2016-06-14
JP5766481B2 (ja) 2015-08-19
US20120249915A1 (en) 2012-10-04
JP2012208151A (ja) 2012-10-25
TWI482274B (zh) 2015-04-21

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