JP2008091857A - 貫通シリコンビア及びその形成方法 - Google Patents
貫通シリコンビア及びその形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims description 70
- 239000010703 silicon Substances 0.000 title claims description 70
- 229920000642 polymer Polymers 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 238000000059 patterning Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 58
- 150000004767 nitrides Chemical class 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009279 wet oxidation reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 230000009975 flexible effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】多数の半導体チップで構成されたウェハ110の各チップに溝を形成するステップと、前記溝を埋め込むようにウェハ110上に液状のポリマーを形成するステップと、前記ポリマーをパタニングして溝の側壁にポリマーからなる絶縁膜140aを形成するステップと、前記側壁に絶縁膜140aが形成された溝を埋め込むように金属膜170を形成するステップと、前記溝内に埋め込まれている金属膜170が露出されるようにウェハ110の後面をバックグラインディングするステップと、を含む。
【選択図】図1F
Description
120 第1感光膜パターン
130 溝
140 ポリマー
140a 絶縁膜
150 シード金属膜
160 第2感光膜パターン
170 金属膜
180 貫通シリコンビア
Claims (8)
- チップを貫通するように形成された垂直ホールと、前記垂直ホールの表面に形成された絶縁膜及び前記垂直ホール内埋め込まれた金属膜を含む貫通シリコンビアにおいて、
前記絶縁膜は機械的柔軟性を有するポリマーで成されたことを特徴とする貫通シリコンビア。 - チップを貫通するように形成された垂直ホールの表面に形成された絶縁膜、及び前記垂直ホール内に埋め込まれた金属膜を含む、貫通シリコンビアが形成された貫通シリコンビア形成体において、
前記絶縁膜は機械的柔軟性を有するポリマーで成されたことを特徴とする貫通シリコンビア形成体。 - 多数の半導体チップで構成されたウェハの各チップに溝を形成するステップと、
前記溝を埋め込むようにウェハ上に液状のポリマーを形成するステップと、
前記ポリマーをパタニングし溝の側壁にポリマーからなる絶縁膜を形成するステップと、
前記側壁に絶縁膜が形成された溝を埋め込むように金属膜を形成するステップと、及び
前記溝内に埋め込まれた金属膜が露出されるようにウェハの後面をバックグラインディングするステップと、
を含むことを特徴とする貫通シリコンビアの形成方法。 - 前記溝を形成するステップは、前記ウェハ上に各チップの貫通シリコンビア形成領域を露出させる感光膜パターンを形成するステップと、前記感光膜パターンをエッチングマスクとして利用し露出された部分をエッチングするステップと、及び前記感光膜パターンを除去するステップと、で構成されることを特徴とする請求項3に記載の貫通シリコンビアの形成方法。
- 前記ポリマーのパタニングはフォトリソグラフィ工程で遂行することを特徴とする請求項3に記載の貫通シリコンビアの形成方法。
- 前記ポリマーのパタニングはそれ自体を露光及び現像する方式で遂行することを特徴とする請求項3に記載の貫通シリコンビアの形成方法。
- 前記ポリマーのパタニングはレーザーを利用して特定部分を除去する方式で遂行することを特徴とする請求項3に記載の貫通シリコンビアの形成方法。
- 前記金属膜を形成するステップは、前記絶縁膜を含む溝及びウェハ上にシード金属膜を蒸着するステップと、前記ウェハ上のシード金属膜上に前記溝及びそれに隣接したシード金属膜部分を露出させる感光膜パターンを形成するステップと、前記露出されたシード金属膜部分上に電解メッキ工程で金属膜をメッキするステップと、及び前記感光膜パターンを除去するステップと、で構成されることを特徴とする請求項3に記載の貫通シリコンビアの形成方法。
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KR1020060096718A KR100800161B1 (ko) | 2006-09-30 | 2006-09-30 | 관통 실리콘 비아 형성방법 |
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US (2) | US7691748B2 (ja) |
JP (1) | JP2008091857A (ja) |
KR (1) | KR100800161B1 (ja) |
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US9202767B2 (en) | 2011-03-08 | 2015-12-01 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
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WO2010047264A1 (ja) | 2008-10-20 | 2010-04-29 | 住友ベークライト株式会社 | スプレー塗布用ポジ型感光性樹脂組成物及びそれを用いた貫通電極の製造方法 |
KR20110079646A (ko) | 2008-10-20 | 2011-07-07 | 스미토모 베이클리트 컴퍼니 리미티드 | 스프레이 도포용 포지티브형 감광성 수지조성물 및 그것을 이용한 관통전극의 제조방법 |
US9005876B2 (en) | 2008-10-20 | 2015-04-14 | Sumitomo Bakelite Co., Ltd. | Positive photosensitive resin composition for spray coating and method for producing through electrode using the same |
US9202767B2 (en) | 2011-03-08 | 2015-12-01 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US7691748B2 (en) | 2010-04-06 |
KR100800161B1 (ko) | 2008-02-01 |
US20100148370A1 (en) | 2010-06-17 |
US20080079121A1 (en) | 2008-04-03 |
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