JP2008047695A - ウエーハのエッチング方法 - Google Patents
ウエーハのエッチング方法 Download PDFInfo
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- JP2008047695A JP2008047695A JP2006221853A JP2006221853A JP2008047695A JP 2008047695 A JP2008047695 A JP 2008047695A JP 2006221853 A JP2006221853 A JP 2006221853A JP 2006221853 A JP2006221853 A JP 2006221853A JP 2008047695 A JP2008047695 A JP 2008047695A
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- 238000005530 etching Methods 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- 238000000227 grinding Methods 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000003486 chemical etching Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 87
- 239000000243 solution Substances 0.000 description 40
- 239000004065 semiconductor Substances 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000007730 finishing process Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
Abstract
【解決手段】研削加工で形成した凹部1Aを上に向けてウエーハ1をチャックテーブル90上に保持し、次いで、凹部1A内に必要量のエッチング液Lを供給してエッチング処理する。次いで、チャックテーブル90とともにウエーハ1を回転させ、凹部1A内のエッチング液Lを遠心力によって飛散させて除去し、この後、チャックテーブル90を回転させたままの状態で凹部1Aに純水Wを供給して凹部1Aを洗浄する。
【選択図】図6
Description
[1]半導体ウエーハ
図1は、裏面に凹部が形成される円盤状の半導体ウエーハ(以下ウエーハと略称)を示している。このウエーハ1はシリコンウエーハ等であって、加工前の厚さは例えば600〜700μm程度である。ウエーハ1の表面には、格子状の分割予定ライン2によって複数の矩形状の半導体チップ(デバイス)3が区画されており、これら半導体チップ3の表面には、ICやLSI等の図示せぬ電子回路が形成されている。
次に、ウエーハ1の裏面のデバイス形成領域4に対応する領域のみを研削加工して薄化し、ウエーハ1の裏面側に凹部を形成する工程を行う。図2は、凹部形成に好適な研削装置20を示しており、この研削装置20は、ウエーハ1を保持する真空チャック式のチャックテーブル30と、このチャックテーブル30の上方に配される研削ユニット40とを備えている。
次に、ウエーハ1の裏面にエッチングを施して凹部1Aの底面4aおよび内周面5aを僅かの厚さ除去するエッチング処理を行う。以下に説明するエッチング方法が本発明に係るもので、図4は、そのエッチング方法を好適に実施し得るエッチング装置である。このエッチング装置50は直方体状の基台51を有し、基台51上には、長手方向である図中Y方向の一端側から他端側にわたって、ピックアップロボット60、位置決めテーブル70および移送アーム80、チャックテーブル(保持手段)90、エッチング液供給装置100が配置されている。
以上がエッチング処理の1サイクルであり、多数のウエーハ1に対して上記動作が繰り返されエッチング処理がなされる。
1A…凹部
3…半導体チップ(デバイス)
4…デバイス形成領域
5…外周余剰領域(外周部)
5A…環状凸部
50…エッチング装置
90…チャックテーブル(保持手段)
L…エッチング液
W…純水(洗浄液)
Claims (3)
- 表面に複数のデバイスが形成されたデバイス形成領域の周囲に外周余剰領域を有し、裏面のデバイス形成領域に対応する領域が研削加工によって薄化されることにより、裏面側に凹部が形成されるとともに、外周余剰領域に裏面側に突出する環状凸部が形成されたウエーハの前記凹部に、化学的エッチングを施すエッチング方法であって、
前記ウエーハを、回転可能な保持手段に、前記凹部が上方に向けて露出する状態に保持する保持工程と、
前記凹部内に必要量のエッチング液を供給してエッチングを施すエッチング工程と、
前記保持手段を回転させてウエーハを回転させ、凹部内のエッチング液を遠心力によって凹部外に飛散させて除去するエッチング液除去工程と、
前記保持手段を回転させたままの状態で前記凹部に洗浄液を供給して該凹部を洗浄する洗浄工程と
を具備することを特徴とするウエーハのエッチング方法。 - 前記エッチング工程と前記エッチング液除去工程とを所要回数繰り返し、この後、前記洗浄工程を行うことを特徴とする請求項1に記載のウエーハのエッチング方法。
- 前記洗浄工程での前記保持手段の回転速度を、前記エッチング液除去工程での保持手段の回転速度よりも遅くすることを特徴とする請求項1または2に記載のウエーハのエッチング方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006221853A JP4937674B2 (ja) | 2006-08-16 | 2006-08-16 | ウエーハのエッチング方法 |
US11/891,244 US20080045015A1 (en) | 2006-08-16 | 2007-08-09 | Method of etching wafer |
Applications Claiming Priority (1)
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---|---|---|---|
JP2006221853A JP4937674B2 (ja) | 2006-08-16 | 2006-08-16 | ウエーハのエッチング方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008047695A true JP2008047695A (ja) | 2008-02-28 |
JP4937674B2 JP4937674B2 (ja) | 2012-05-23 |
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JP2006221853A Active JP4937674B2 (ja) | 2006-08-16 | 2006-08-16 | ウエーハのエッチング方法 |
Country Status (2)
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US (1) | US20080045015A1 (ja) |
JP (1) | JP4937674B2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008177425A (ja) * | 2007-01-19 | 2008-07-31 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2009224511A (ja) * | 2008-03-14 | 2009-10-01 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP2009224622A (ja) * | 2008-03-17 | 2009-10-01 | Shindengen Electric Mfg Co Ltd | 半導体チップの製造方法、半導体ウエハおよび半導体チップ |
JP2009259941A (ja) * | 2008-04-15 | 2009-11-05 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP2010192537A (ja) * | 2009-02-16 | 2010-09-02 | Lintec Corp | 半導体装置の製造方法 |
JP2010192535A (ja) * | 2009-02-16 | 2010-09-02 | Lintec Corp | 半導体装置の製造方法 |
US8679360B2 (en) | 2011-04-01 | 2014-03-25 | Seiko Epson Corporation | Base surface processing method and MEMS device |
JP2014154773A (ja) * | 2013-02-12 | 2014-08-25 | Disco Abrasive Syst Ltd | 加工方法 |
JP2017085174A (ja) * | 2011-12-27 | 2017-05-18 | 芝浦メカトロニクス株式会社 | 基板の処理装置及び処理方法 |
JP2021048359A (ja) * | 2019-09-20 | 2021-03-25 | 株式会社Screenホールディングス | 基板処理装置 |
DE102023211633A1 (de) | 2022-11-29 | 2024-05-29 | Disco Corporation | Waferbearbeitungsvorrichtung |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4791774B2 (ja) * | 2005-07-25 | 2011-10-12 | 株式会社ディスコ | ウェーハの加工方法及び研削装置 |
JP2009096698A (ja) * | 2007-10-19 | 2009-05-07 | Toshiba Corp | ウェーハ及びその製造方法 |
WO2009141740A2 (en) * | 2008-05-23 | 2009-11-26 | Florian Bieck | Semiconductor wafer and method for producing the same |
US8563361B2 (en) * | 2012-02-14 | 2013-10-22 | Alpha & Omega Semiconductor, Inc. | Packaging method of molded wafer level chip scale package (WLCSP) |
JP7049801B2 (ja) * | 2017-10-12 | 2022-04-07 | 株式会社ディスコ | 被加工物の研削方法 |
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JP2010192535A (ja) * | 2009-02-16 | 2010-09-02 | Lintec Corp | 半導体装置の製造方法 |
US8679360B2 (en) | 2011-04-01 | 2014-03-25 | Seiko Epson Corporation | Base surface processing method and MEMS device |
JP2017085174A (ja) * | 2011-12-27 | 2017-05-18 | 芝浦メカトロニクス株式会社 | 基板の処理装置及び処理方法 |
JP2014154773A (ja) * | 2013-02-12 | 2014-08-25 | Disco Abrasive Syst Ltd | 加工方法 |
JP2021048359A (ja) * | 2019-09-20 | 2021-03-25 | 株式会社Screenホールディングス | 基板処理装置 |
JP7324667B2 (ja) | 2019-09-20 | 2023-08-10 | 株式会社Screenホールディングス | 基板処理装置 |
US11948823B2 (en) | 2019-09-20 | 2024-04-02 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus |
DE102023211633A1 (de) | 2022-11-29 | 2024-05-29 | Disco Corporation | Waferbearbeitungsvorrichtung |
KR20240080116A (ko) | 2022-11-29 | 2024-06-05 | 가부시기가이샤 디스코 | 웨이퍼의 가공 장치 |
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